JPH0473609B2 - - Google Patents

Info

Publication number
JPH0473609B2
JPH0473609B2 JP60130720A JP13072085A JPH0473609B2 JP H0473609 B2 JPH0473609 B2 JP H0473609B2 JP 60130720 A JP60130720 A JP 60130720A JP 13072085 A JP13072085 A JP 13072085A JP H0473609 B2 JPH0473609 B2 JP H0473609B2
Authority
JP
Japan
Prior art keywords
protective film
substrate
crystal
growth
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60130720A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61289621A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13072085A priority Critical patent/JPS61289621A/ja
Publication of JPS61289621A publication Critical patent/JPS61289621A/ja
Publication of JPH0473609B2 publication Critical patent/JPH0473609B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP13072085A 1985-06-18 1985-06-18 分子線エピタキシヤル成長方法 Granted JPS61289621A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13072085A JPS61289621A (ja) 1985-06-18 1985-06-18 分子線エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13072085A JPS61289621A (ja) 1985-06-18 1985-06-18 分子線エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS61289621A JPS61289621A (ja) 1986-12-19
JPH0473609B2 true JPH0473609B2 (enExample) 1992-11-24

Family

ID=15041013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13072085A Granted JPS61289621A (ja) 1985-06-18 1985-06-18 分子線エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS61289621A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5107076B2 (ja) * 2008-02-01 2012-12-26 Ｊｘ日鉱日石金属株式会社 半導体基板の表面処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119090A (ja) * 1984-11-14 1986-06-06 Rohm Co Ltd 半導体レ−ザの製造方法
JPS61232608A (ja) * 1985-04-08 1986-10-16 Sharp Corp 半導体素子の製造方法

Also Published As

Publication number Publication date
JPS61289621A (ja) 1986-12-19

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