JPS61275198A - 窒化ほう素被膜の析出形成方法 - Google Patents

窒化ほう素被膜の析出形成方法

Info

Publication number
JPS61275198A
JPS61275198A JP11734485A JP11734485A JPS61275198A JP S61275198 A JPS61275198 A JP S61275198A JP 11734485 A JP11734485 A JP 11734485A JP 11734485 A JP11734485 A JP 11734485A JP S61275198 A JPS61275198 A JP S61275198A
Authority
JP
Japan
Prior art keywords
reaction vessel
boron nitride
substrate
hydrogen
discharge region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11734485A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0246559B2 (enrdf_load_stackoverflow
Inventor
Kazuo Akashi
明石　和夫
Toyonobu Yoshida
豊信 吉田
Shojiro Komatsu
小松　正二郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP11734485A priority Critical patent/JPS61275198A/ja
Publication of JPS61275198A publication Critical patent/JPS61275198A/ja
Publication of JPH0246559B2 publication Critical patent/JPH0246559B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP11734485A 1985-05-30 1985-05-30 窒化ほう素被膜の析出形成方法 Granted JPS61275198A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11734485A JPS61275198A (ja) 1985-05-30 1985-05-30 窒化ほう素被膜の析出形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11734485A JPS61275198A (ja) 1985-05-30 1985-05-30 窒化ほう素被膜の析出形成方法

Publications (2)

Publication Number Publication Date
JPS61275198A true JPS61275198A (ja) 1986-12-05
JPH0246559B2 JPH0246559B2 (enrdf_load_stackoverflow) 1990-10-16

Family

ID=14709376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11734485A Granted JPS61275198A (ja) 1985-05-30 1985-05-30 窒化ほう素被膜の析出形成方法

Country Status (1)

Country Link
JP (1) JPS61275198A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395200A (ja) * 1986-10-09 1988-04-26 Sumitomo Electric Ind Ltd 硬質窒化ホウ素膜の製造方法
JPS63277767A (ja) * 1987-05-11 1988-11-15 Fujitsu Ltd 高圧相窒化ホウ素の気相合成法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61153279A (ja) * 1984-12-27 1986-07-11 Toshiba Tungaloy Co Ltd 硬質窒化ホウ素被覆材料の製造方法
JPS61247699A (ja) * 1985-04-22 1986-11-04 Nec Corp 基板の製造方法
JPS61266576A (ja) * 1985-05-21 1986-11-26 Toshiba Tungaloy Co Ltd 高硬度窒化ホウ素被覆部材の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61153279A (ja) * 1984-12-27 1986-07-11 Toshiba Tungaloy Co Ltd 硬質窒化ホウ素被覆材料の製造方法
JPS61247699A (ja) * 1985-04-22 1986-11-04 Nec Corp 基板の製造方法
JPS61266576A (ja) * 1985-05-21 1986-11-26 Toshiba Tungaloy Co Ltd 高硬度窒化ホウ素被覆部材の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395200A (ja) * 1986-10-09 1988-04-26 Sumitomo Electric Ind Ltd 硬質窒化ホウ素膜の製造方法
JPS63277767A (ja) * 1987-05-11 1988-11-15 Fujitsu Ltd 高圧相窒化ホウ素の気相合成法

Also Published As

Publication number Publication date
JPH0246559B2 (enrdf_load_stackoverflow) 1990-10-16

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