JPS6124830B2 - - Google Patents

Info

Publication number
JPS6124830B2
JPS6124830B2 JP52139586A JP13958677A JPS6124830B2 JP S6124830 B2 JPS6124830 B2 JP S6124830B2 JP 52139586 A JP52139586 A JP 52139586A JP 13958677 A JP13958677 A JP 13958677A JP S6124830 B2 JPS6124830 B2 JP S6124830B2
Authority
JP
Japan
Prior art keywords
well region
voltage
conductivity type
power supply
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52139586A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5472691A (en
Inventor
Yasoji Suzuki
Kyobumi Ochii
Koji Asahi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP13958677A priority Critical patent/JPS5472691A/ja
Priority to DE2850305A priority patent/DE2850305C2/de
Priority to US05/962,222 priority patent/US4233672A/en
Publication of JPS5472691A publication Critical patent/JPS5472691A/ja
Publication of JPS6124830B2 publication Critical patent/JPS6124830B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP13958677A 1977-11-21 1977-11-21 Semiconductor device Granted JPS5472691A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP13958677A JPS5472691A (en) 1977-11-21 1977-11-21 Semiconductor device
DE2850305A DE2850305C2 (de) 1977-11-21 1978-11-20 Halbleiterspeichervorrichtung
US05/962,222 US4233672A (en) 1977-11-21 1978-11-20 High-speed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13958677A JPS5472691A (en) 1977-11-21 1977-11-21 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58219509A Division JPS59130456A (ja) 1983-11-24 1983-11-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS5472691A JPS5472691A (en) 1979-06-11
JPS6124830B2 true JPS6124830B2 (enExample) 1986-06-12

Family

ID=15248707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13958677A Granted JPS5472691A (en) 1977-11-21 1977-11-21 Semiconductor device

Country Status (3)

Country Link
US (1) US4233672A (enExample)
JP (1) JPS5472691A (enExample)
DE (1) DE2850305C2 (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5348898A (en) * 1979-05-25 1994-09-20 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
US4340943A (en) * 1979-05-31 1982-07-20 Tokyo Shibaura Denki Kabushiki Kaisha Memory device utilizing MOS FETs
JPS5618469A (en) * 1979-07-24 1981-02-21 Fujitsu Ltd Semiconductor device
DE3002894C2 (de) * 1980-01-28 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltung mit Transistoren
JPS57124463A (en) * 1981-01-26 1982-08-03 Nec Corp Semiconductor device
JPS57127989A (en) * 1981-02-02 1982-08-09 Hitachi Ltd Mos static type ram
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
US4559548A (en) * 1981-04-07 1985-12-17 Tokyo Shibaura Denki Kabushiki Kaisha CMOS Charge pump free of parasitic injection
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory
US4870471A (en) * 1982-09-30 1989-09-26 Mitsubishi Denki Kabushiki Kaisha Complementary metal-oxide semiconductor integrated circuit device with isolation
US6414368B1 (en) 1982-11-26 2002-07-02 Stmicroelectronics Limited Microcomputer with high density RAM on single chip
US5243698A (en) * 1982-11-26 1993-09-07 Inmos Limited Microcomputer
US4628340A (en) * 1983-02-22 1986-12-09 Tokyo Shibaura Denki Kabushiki Kaisha CMOS RAM with no latch-up phenomenon
JPS6066504A (ja) * 1983-09-22 1985-04-16 Oki Electric Ind Co Ltd 半導体集積回路
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4612461A (en) * 1984-02-09 1986-09-16 Motorola, Inc. High speed input buffer having substrate biasing to increase the transistor threshold voltage for level shifting
US4710897A (en) * 1984-04-27 1987-12-01 Kabushiki Kaisha Toshiba Semiconductor memory device comprising six-transistor memory cells
JPS60253090A (ja) * 1984-05-30 1985-12-13 Hitachi Ltd 半導体装置
US5121186A (en) * 1984-06-15 1992-06-09 Hewlett-Packard Company Integrated circuit device having improved junction connections
JPS6124090A (ja) * 1984-07-12 1986-02-01 Nec Corp スタンバイ機能を有するｃｍｏｓマイクロコンピュ−タ
US4631421A (en) * 1984-08-14 1986-12-23 Texas Instruments CMOS substrate bias generator
US4811078A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Integrated circuit device and process with tin capacitors
US4670668A (en) * 1985-05-09 1987-06-02 Advanced Micro Devices, Inc. Substrate bias generator with power supply control means to sequence application of bias and power to prevent CMOS SCR latch-up
US4628214A (en) * 1985-05-22 1986-12-09 Sgs Semiconductor Corporation Back bias generator
US4670861A (en) * 1985-06-21 1987-06-02 Advanced Micro Devices, Inc. CMOS N-well bias generator and gating system
EP0213425B1 (de) * 1985-08-26 1992-05-06 Siemens Aktiengesellschaft Integrierte Schaltung in komplementärer Schaltungstechnik mit einem Substratvorspannungs-Generator und einer Schottky-Diode
US5324982A (en) * 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device
JPS62229870A (ja) * 1986-01-22 1987-10-08 Mitsubishi Electric Corp 半導体集積回路
JPS6337892A (ja) * 1986-07-30 1988-02-18 Mitsubishi Electric Corp ダイナミツクランダムアクセスメモリの基板電位発生回路
US5726475A (en) * 1987-07-10 1998-03-10 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
US5260226A (en) * 1987-07-10 1993-11-09 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
DE3886283T2 (de) * 1987-07-10 1994-05-11 Toshiba Kawasaki Kk Halbleiterbauelement mit Bereichen unterschiedlicher Störstellenkonzentration.
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
JPH0682807B2 (ja) * 1988-09-12 1994-10-19 株式会社東芝 半導体メモリ
EP0444602B1 (en) * 1990-02-26 1996-05-15 Nec Corporation Decoder circuit
JPH03276673A (ja) * 1990-03-26 1991-12-06 Matsushita Electric Ind Co Ltd 半導体記憶装置
DE69131441T2 (de) * 1990-04-13 1999-12-16 Kabushiki Kaisha Toshiba, Kawasaki Methode zur Verhinderung von einer Spannungsschwankung in einem Halbleiterbauelement
US5243559A (en) * 1990-12-12 1993-09-07 Nippon Steel Corporation Semiconductor memory device
EP0564204A3 (en) * 1992-03-30 1994-09-28 Mitsubishi Electric Corp Semiconductor device
JPH08125034A (ja) * 1993-12-03 1996-05-17 Mitsubishi Electric Corp 半導体記憶装置
JP2822881B2 (ja) * 1994-03-30 1998-11-11 日本電気株式会社 半導体集積回路装置
EP0779659A3 (en) * 1995-12-15 1998-07-08 Nec Corporation Semiconductor integrated circuit
US6406861B1 (en) 1998-10-07 2002-06-18 Cell Genesys, Inc. Methods of enhancing effectiveness of therapeutic viral immunogenic agent administration
WO2003028111A1 (en) * 2001-09-25 2003-04-03 Sony Corporation Nonvolatile semiconductor memory device and its manufacturing method
JP4537668B2 (ja) * 2003-05-23 2010-09-01 パナソニック株式会社 多ポートメモリセル
US8050080B2 (en) * 2008-03-05 2011-11-01 S. Aqua Semiconductor Llc Random access memory with CMOS-compatible nonvolatile storage element in series with storage capacitor
US8000140B2 (en) * 2008-03-24 2011-08-16 S. Aqua Semiconductor, Llc Random access memory with CMOS-compatible nonvolatile storage element
US7885110B2 (en) * 2008-03-25 2011-02-08 Rao G R Mohan Random access memory with CMOS-compatible nonvolatile storage element and parallel storage capacitor
US11500791B2 (en) * 2020-12-10 2022-11-15 Micron Technology, Inc. Status check using chip enable pin

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits

Also Published As

Publication number Publication date
US4233672A (en) 1980-11-11
DE2850305C2 (de) 1984-01-12
DE2850305A1 (de) 1979-05-23
JPS5472691A (en) 1979-06-11

Similar Documents

Publication Publication Date Title
JPS6124830B2 (enExample)
EP0717413B1 (en) Memory cell and wordline driver for embedded dram in ASIC process
US6385159B2 (en) Semiconductor memory device including an SOI substrate
JP4290457B2 (ja) 半導体記憶装置
US6744680B2 (en) Semiconductor device realized by using partial SOI technology
KR0153847B1 (ko) 반도체 기억장치
US5128896A (en) Semiconductor memory drive
US5179535A (en) Substrate bias voltage generating circuit including an internal frequency divider and driven by an externally applied clock signal
US4288706A (en) Noise immunity in input buffer circuit for semiconductor memory
JPS5944720B2 (ja) ダイナミック半導体記憶装置
US4280070A (en) Balanced input buffer circuit for semiconductor memory
US6310795B1 (en) Semiconductor memory device with data retention characteristic of improved stability
US4833343A (en) Clock generator having complementary transistors
JPS6027118B2 (ja) 半導体メモリ装置
JP2868789B2 (ja) 半導体駆動回路
GB2032211A (en) High Performance Dynamic MOS Read/Write Memory
JPS59130456A (ja) 半導体装置
JPS6370558A (ja) 半導体メモリセル
JPH0152835B2 (enExample)
US5646895A (en) Semiconductor memory device with bit line potential compensation circuits
JPH0773669A (ja) 半導体装置
JPS5938674B2 (ja) 記憶装置
JPH06325568A (ja) 半導体集積回路装置
JP2675638B2 (ja) 半導体集積回路
US10148254B2 (en) Standby current reduction in digital circuitries