JPS6124815B2 - - Google Patents
Info
- Publication number
- JPS6124815B2 JPS6124815B2 JP52091077A JP9107777A JPS6124815B2 JP S6124815 B2 JPS6124815 B2 JP S6124815B2 JP 52091077 A JP52091077 A JP 52091077A JP 9107777 A JP9107777 A JP 9107777A JP S6124815 B2 JPS6124815 B2 JP S6124815B2
- Authority
- JP
- Japan
- Prior art keywords
- patterns
- charged particle
- pattern
- exposure
- exposure amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9107777A JPS5425596A (en) | 1977-07-29 | 1977-07-29 | Method of projecting charged particle beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9107777A JPS5425596A (en) | 1977-07-29 | 1977-07-29 | Method of projecting charged particle beam |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5425596A JPS5425596A (en) | 1979-02-26 |
JPS6124815B2 true JPS6124815B2 (enrdf_load_stackoverflow) | 1986-06-12 |
Family
ID=14016435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9107777A Granted JPS5425596A (en) | 1977-07-29 | 1977-07-29 | Method of projecting charged particle beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5425596A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54105971A (en) * | 1978-02-07 | 1979-08-20 | Jeol Ltd | Electron beam exposure method |
DE3169257D1 (en) * | 1980-11-28 | 1985-04-18 | Ibm | Electron beam system and method |
JPS62206829A (ja) * | 1986-03-06 | 1987-09-11 | Nec Corp | 荷電粒子線描画装置 |
JPH0330313A (ja) * | 1989-06-27 | 1991-02-08 | Matsushita Electric Ind Co Ltd | 微細パターン形成方法 |
US9460260B2 (en) * | 2014-02-21 | 2016-10-04 | Mapper Lithography Ip B.V. | Enhanced stitching by overlap dose and feature reduction |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5424833A (en) * | 1977-07-26 | 1979-02-24 | Mitsubishi Chem Ind Ltd | Polyoxyethylene glycol complex of rare earth element |
-
1977
- 1977-07-29 JP JP9107777A patent/JPS5425596A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5425596A (en) | 1979-02-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4520269A (en) | Electron beam lithography proximity correction method | |
JP3340248B2 (ja) | 電子ビーム露光方法 | |
JPH0536595A (ja) | 電子線露光方法 | |
JPS6124815B2 (enrdf_load_stackoverflow) | ||
JP2706099B2 (ja) | 半導体装置の製造方法 | |
EP0009049B1 (en) | Apparatus and method for fabricating microminiature devices | |
KR960018761A (ko) | 전자선묘화방법 및 장치 | |
JPH0554251B2 (enrdf_load_stackoverflow) | ||
JP2001308004A (ja) | 半導体装置の製造方法及び電子線露光方法 | |
JP2007227488A (ja) | 荷電粒子ビーム描画方法 | |
US6316152B1 (en) | OPC method to improve e-beam writing time | |
JPS6030131A (ja) | 電子ビ−ム露光装置 | |
JP2001230182A (ja) | 半導体装置の製造方法 | |
JPH04176114A (ja) | ステップアンドリピート方式荷電粒子ビーム描画方法 | |
JPS6010726A (ja) | 電子ビ−ム露光方法 | |
JP5588493B2 (ja) | 電子ビーム露光方法 | |
JPH10270341A (ja) | 電子ビーム描画方法 | |
JPH03257815A (ja) | 荷電粒子ビーム描画方法 | |
JP3086238B2 (ja) | 荷電粒子ビーム露光装置 | |
JPH02224321A (ja) | 電子ビーム描画装置 | |
JP3607989B2 (ja) | 荷電粒子線転写装置 | |
JPS62152125A (ja) | 荷電ビ−ム露光装置 | |
JPS63257226A (ja) | 荷電粒子線描画方式 | |
JPS607682A (ja) | 磁気バブルメモリ素子 | |
JPS61164222A (ja) | 電子ビ−ム露光方法 |