JPS6123661B2 - - Google Patents
Info
- Publication number
- JPS6123661B2 JPS6123661B2 JP52038865A JP3886577A JPS6123661B2 JP S6123661 B2 JPS6123661 B2 JP S6123661B2 JP 52038865 A JP52038865 A JP 52038865A JP 3886577 A JP3886577 A JP 3886577A JP S6123661 B2 JPS6123661 B2 JP S6123661B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- oxide film
- storage capacitor
- silicon oxide
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 claims description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000010354 integration Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3886577A JPS53123687A (en) | 1977-04-04 | 1977-04-04 | Binary memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3886577A JPS53123687A (en) | 1977-04-04 | 1977-04-04 | Binary memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53123687A JPS53123687A (en) | 1978-10-28 |
| JPS6123661B2 true JPS6123661B2 (enrdf_load_stackoverflow) | 1986-06-06 |
Family
ID=12537089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3886577A Granted JPS53123687A (en) | 1977-04-04 | 1977-04-04 | Binary memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53123687A (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5658310U (enrdf_load_stackoverflow) * | 1979-10-12 | 1981-05-19 | ||
| JPS57112066A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Laminated capacitive element |
| JPS5956754A (ja) * | 1982-09-24 | 1984-04-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0734451B2 (ja) * | 1986-09-03 | 1995-04-12 | 日本電気株式会社 | 半導体装置の製造方法 |
| US4958318A (en) * | 1988-07-08 | 1990-09-18 | Eliyahou Harari | Sidewall capacitor DRAM cell |
| JP2894361B2 (ja) * | 1990-02-16 | 1999-05-24 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| KR930008580B1 (ko) * | 1990-06-22 | 1993-09-09 | 현대전자산업 주식회사 | 표면적이 극대화된 실리콘층 및 그 제조방법 |
| US6403455B1 (en) | 2000-08-31 | 2002-06-11 | Samsung Austin Semiconductor, L.P. | Methods of fabricating a memory device |
| US6689668B1 (en) | 2000-08-31 | 2004-02-10 | Samsung Austin Semiconductor, L.P. | Methods to improve density and uniformity of hemispherical grain silicon layers |
-
1977
- 1977-04-04 JP JP3886577A patent/JPS53123687A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53123687A (en) | 1978-10-28 |
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