JPS53123687A - Binary memory element - Google Patents

Binary memory element

Info

Publication number
JPS53123687A
JPS53123687A JP3886577A JP3886577A JPS53123687A JP S53123687 A JPS53123687 A JP S53123687A JP 3886577 A JP3886577 A JP 3886577A JP 3886577 A JP3886577 A JP 3886577A JP S53123687 A JPS53123687 A JP S53123687A
Authority
JP
Japan
Prior art keywords
memory element
binary memory
memory capacity
capacity part
binary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3886577A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6123661B2 (enrdf_load_stackoverflow
Inventor
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3886577A priority Critical patent/JPS53123687A/ja
Publication of JPS53123687A publication Critical patent/JPS53123687A/ja
Publication of JPS6123661B2 publication Critical patent/JPS6123661B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP3886577A 1977-04-04 1977-04-04 Binary memory element Granted JPS53123687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3886577A JPS53123687A (en) 1977-04-04 1977-04-04 Binary memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3886577A JPS53123687A (en) 1977-04-04 1977-04-04 Binary memory element

Publications (2)

Publication Number Publication Date
JPS53123687A true JPS53123687A (en) 1978-10-28
JPS6123661B2 JPS6123661B2 (enrdf_load_stackoverflow) 1986-06-06

Family

ID=12537089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3886577A Granted JPS53123687A (en) 1977-04-04 1977-04-04 Binary memory element

Country Status (1)

Country Link
JP (1) JPS53123687A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658310U (enrdf_load_stackoverflow) * 1979-10-12 1981-05-19
JPS57112066A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Laminated capacitive element
JPS5956754A (ja) * 1982-09-24 1984-04-02 Fujitsu Ltd 半導体装置の製造方法
JPS6362370A (ja) * 1986-09-03 1988-03-18 Nec Corp 半導体装置の製造方法
JPH03263370A (ja) * 1990-02-16 1991-11-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0621336A (ja) * 1990-06-22 1994-01-28 Hyundai Electron Ind Co Ltd 表面積が極大化されたシリコン層およびその製造方法
US5327375A (en) * 1988-07-08 1994-07-05 Eliyahou Harari DRAM cell utilizing novel capacitor
US6403455B1 (en) 2000-08-31 2002-06-11 Samsung Austin Semiconductor, L.P. Methods of fabricating a memory device
US6689668B1 (en) 2000-08-31 2004-02-10 Samsung Austin Semiconductor, L.P. Methods to improve density and uniformity of hemispherical grain silicon layers

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658310U (enrdf_load_stackoverflow) * 1979-10-12 1981-05-19
JPS57112066A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Laminated capacitive element
JPS5956754A (ja) * 1982-09-24 1984-04-02 Fujitsu Ltd 半導体装置の製造方法
JPS6362370A (ja) * 1986-09-03 1988-03-18 Nec Corp 半導体装置の製造方法
US5327375A (en) * 1988-07-08 1994-07-05 Eliyahou Harari DRAM cell utilizing novel capacitor
JPH03263370A (ja) * 1990-02-16 1991-11-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0621336A (ja) * 1990-06-22 1994-01-28 Hyundai Electron Ind Co Ltd 表面積が極大化されたシリコン層およびその製造方法
US6403455B1 (en) 2000-08-31 2002-06-11 Samsung Austin Semiconductor, L.P. Methods of fabricating a memory device
US6689668B1 (en) 2000-08-31 2004-02-10 Samsung Austin Semiconductor, L.P. Methods to improve density and uniformity of hemispherical grain silicon layers

Also Published As

Publication number Publication date
JPS6123661B2 (enrdf_load_stackoverflow) 1986-06-06

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