JPS61231765A - 薄膜半導体装置の製造方法 - Google Patents

薄膜半導体装置の製造方法

Info

Publication number
JPS61231765A
JPS61231765A JP60072636A JP7263685A JPS61231765A JP S61231765 A JPS61231765 A JP S61231765A JP 60072636 A JP60072636 A JP 60072636A JP 7263685 A JP7263685 A JP 7263685A JP S61231765 A JPS61231765 A JP S61231765A
Authority
JP
Japan
Prior art keywords
thin film
film semiconductor
gate
semiconductor device
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60072636A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0550854B2 (https=
Inventor
Akio Mimura
三村　秋男
Yoshikazu Hosokawa
細川　義和
Takaya Suzuki
誉也 鈴木
Takashi Aoyama
隆 青山
Nobutake Konishi
信武 小西
Yutaka Misawa
三沢　豊
Kenji Miyata
健治 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60072636A priority Critical patent/JPS61231765A/ja
Priority to EP86104695A priority patent/EP0197531B1/en
Priority to DE86104695T priority patent/DE3688758T2/de
Publication of JPS61231765A publication Critical patent/JPS61231765A/ja
Priority to US07/113,360 priority patent/US4954855A/en
Publication of JPH0550854B2 publication Critical patent/JPH0550854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP60072636A 1985-04-08 1985-04-08 薄膜半導体装置の製造方法 Granted JPS61231765A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60072636A JPS61231765A (ja) 1985-04-08 1985-04-08 薄膜半導体装置の製造方法
EP86104695A EP0197531B1 (en) 1985-04-08 1986-04-07 Thin film transistor formed on insulating substrate
DE86104695T DE3688758T2 (de) 1985-04-08 1986-04-07 Dünnfilmtransistor auf isolierendem Substrat.
US07/113,360 US4954855A (en) 1985-04-08 1987-10-28 Thin film transistor formed on insulating substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60072636A JPS61231765A (ja) 1985-04-08 1985-04-08 薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61231765A true JPS61231765A (ja) 1986-10-16
JPH0550854B2 JPH0550854B2 (https=) 1993-07-30

Family

ID=13495072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60072636A Granted JPS61231765A (ja) 1985-04-08 1985-04-08 薄膜半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61231765A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008218A (en) * 1988-09-20 1991-04-16 Hitachi, Ltd. Method for fabricating a thin film transistor using a silicide as an etch mask
US9754935B2 (en) 2014-08-07 2017-09-05 International Business Machines Corporation Raised metal semiconductor alloy for self-aligned middle-of-line contact

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911681A (ja) * 1982-07-12 1984-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911681A (ja) * 1982-07-12 1984-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008218A (en) * 1988-09-20 1991-04-16 Hitachi, Ltd. Method for fabricating a thin film transistor using a silicide as an etch mask
US9754935B2 (en) 2014-08-07 2017-09-05 International Business Machines Corporation Raised metal semiconductor alloy for self-aligned middle-of-line contact

Also Published As

Publication number Publication date
JPH0550854B2 (https=) 1993-07-30

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