JPH0550854B2 - - Google Patents

Info

Publication number
JPH0550854B2
JPH0550854B2 JP60072636A JP7263685A JPH0550854B2 JP H0550854 B2 JPH0550854 B2 JP H0550854B2 JP 60072636 A JP60072636 A JP 60072636A JP 7263685 A JP7263685 A JP 7263685A JP H0550854 B2 JPH0550854 B2 JP H0550854B2
Authority
JP
Japan
Prior art keywords
gate
thin film
film
drain
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP60072636A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61231765A (ja
Inventor
Akio Mimura
Yoshikazu Hosokawa
Takaya Suzuki
Takashi Aoyama
Nobutake Konishi
Yutaka Misawa
Kenji Myata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60072636A priority Critical patent/JPS61231765A/ja
Priority to EP86104695A priority patent/EP0197531B1/en
Priority to DE86104695T priority patent/DE3688758T2/de
Publication of JPS61231765A publication Critical patent/JPS61231765A/ja
Priority to US07/113,360 priority patent/US4954855A/en
Publication of JPH0550854B2 publication Critical patent/JPH0550854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP60072636A 1985-04-08 1985-04-08 薄膜半導体装置の製造方法 Granted JPS61231765A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60072636A JPS61231765A (ja) 1985-04-08 1985-04-08 薄膜半導体装置の製造方法
EP86104695A EP0197531B1 (en) 1985-04-08 1986-04-07 Thin film transistor formed on insulating substrate
DE86104695T DE3688758T2 (de) 1985-04-08 1986-04-07 Dünnfilmtransistor auf isolierendem Substrat.
US07/113,360 US4954855A (en) 1985-04-08 1987-10-28 Thin film transistor formed on insulating substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60072636A JPS61231765A (ja) 1985-04-08 1985-04-08 薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61231765A JPS61231765A (ja) 1986-10-16
JPH0550854B2 true JPH0550854B2 (https=) 1993-07-30

Family

ID=13495072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60072636A Granted JPS61231765A (ja) 1985-04-08 1985-04-08 薄膜半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61231765A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2624797B2 (ja) * 1988-09-20 1997-06-25 株式会社日立製作所 アクティブマトリクス基板の製造方法
US9754935B2 (en) 2014-08-07 2017-09-05 International Business Machines Corporation Raised metal semiconductor alloy for self-aligned middle-of-line contact

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911681A (ja) * 1982-07-12 1984-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造法

Also Published As

Publication number Publication date
JPS61231765A (ja) 1986-10-16

Similar Documents

Publication Publication Date Title
US4954855A (en) Thin film transistor formed on insulating substrate
US5328861A (en) Method for forming thin film transistor
US6569715B1 (en) Large grain single crystal vertical thin film polysilicon mosfets
JP2700277B2 (ja) 薄膜トランジスタの作製方法
JP2502789B2 (ja) 薄膜トランジスタの製造方法
JPH05142571A (ja) 液晶表示装置
JPH0546106B2 (https=)
JPS6113670A (ja) 薄膜電界効果トランジスタの製造方法およびその方法によつて得られるトランジスタ
JPH0550854B2 (https=)
EP0073603B1 (en) Polycrystalline thin-film transistor,integrated circuit including such transistors and a display device including such a circuit
JPH04240733A (ja) 薄膜トランジスタの製造方法
JPH06260644A (ja) 半導体装置の製造方法
JP2864658B2 (ja) 薄膜トランジスタの製造方法
JPH06302791A (ja) 半導体基板及びその製造方法
JP3216173B2 (ja) 薄膜トランジスタ回路の製造方法
JPH02130852A (ja) 半導体装置
JPH07321106A (ja) 酸化シリコン薄膜の改質方法および薄膜トランジスタの製造方法
JPH0691257B2 (ja) アモルファスシリコン薄膜トランジスタ
JP2635086B2 (ja) 半導体装置の製造方法
JP3033521B2 (ja) 半導体装置及びその製造方法
JPH0542137B2 (https=)
JPH04373124A (ja) 半導体装置及びその製造方法
JPH02192768A (ja) 半導体装置の製造方法
KR910001910B1 (ko) 평면 표시 장치
JPH03120872A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees