JPS61225851A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS61225851A
JPS61225851A JP60066799A JP6679985A JPS61225851A JP S61225851 A JPS61225851 A JP S61225851A JP 60066799 A JP60066799 A JP 60066799A JP 6679985 A JP6679985 A JP 6679985A JP S61225851 A JPS61225851 A JP S61225851A
Authority
JP
Japan
Prior art keywords
conductor layer
insulating film
groove
capacitor insulating
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60066799A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023303B2 (cs
Inventor
Nobusato Gotou
後藤　信里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60066799A priority Critical patent/JPS61225851A/ja
Publication of JPS61225851A publication Critical patent/JPS61225851A/ja
Publication of JPH023303B2 publication Critical patent/JPH023303B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP60066799A 1985-03-30 1985-03-30 半導体装置及びその製造方法 Granted JPS61225851A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60066799A JPS61225851A (ja) 1985-03-30 1985-03-30 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60066799A JPS61225851A (ja) 1985-03-30 1985-03-30 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS61225851A true JPS61225851A (ja) 1986-10-07
JPH023303B2 JPH023303B2 (cs) 1990-01-23

Family

ID=13326274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60066799A Granted JPS61225851A (ja) 1985-03-30 1985-03-30 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS61225851A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63299371A (ja) * 1987-05-29 1988-12-06 Matsushita Electric Ind Co Ltd 溝堀り型キャパシタの製造方法
JPH01179443A (ja) * 1988-01-06 1989-07-17 Fujitsu Ltd 半導体装置
US5354710A (en) * 1988-01-14 1994-10-11 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices using an adsorption enhancement layer
US5753530A (en) * 1992-04-21 1998-05-19 Seiko Instruments, Inc. Impurity doping method with diffusion source of boron-silicide film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63299371A (ja) * 1987-05-29 1988-12-06 Matsushita Electric Ind Co Ltd 溝堀り型キャパシタの製造方法
JPH01179443A (ja) * 1988-01-06 1989-07-17 Fujitsu Ltd 半導体装置
US5354710A (en) * 1988-01-14 1994-10-11 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices using an adsorption enhancement layer
US5753530A (en) * 1992-04-21 1998-05-19 Seiko Instruments, Inc. Impurity doping method with diffusion source of boron-silicide film

Also Published As

Publication number Publication date
JPH023303B2 (cs) 1990-01-23

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