JPS6122476B2 - - Google Patents

Info

Publication number
JPS6122476B2
JPS6122476B2 JP55001889A JP188980A JPS6122476B2 JP S6122476 B2 JPS6122476 B2 JP S6122476B2 JP 55001889 A JP55001889 A JP 55001889A JP 188980 A JP188980 A JP 188980A JP S6122476 B2 JPS6122476 B2 JP S6122476B2
Authority
JP
Japan
Prior art keywords
island
oxide film
nitride film
region
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55001889A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56100479A (en
Inventor
Junichi Nishizawa
Masafumi Shinho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP188980A priority Critical patent/JPS56100479A/ja
Publication of JPS56100479A publication Critical patent/JPS56100479A/ja
Publication of JPS6122476B2 publication Critical patent/JPS6122476B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP188980A 1980-01-11 1980-01-11 Manufacture of electric field effect semiconductor device Granted JPS56100479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP188980A JPS56100479A (en) 1980-01-11 1980-01-11 Manufacture of electric field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP188980A JPS56100479A (en) 1980-01-11 1980-01-11 Manufacture of electric field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS56100479A JPS56100479A (en) 1981-08-12
JPS6122476B2 true JPS6122476B2 (en, 2012) 1986-05-31

Family

ID=11514136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP188980A Granted JPS56100479A (en) 1980-01-11 1980-01-11 Manufacture of electric field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS56100479A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198974U (en, 2012) * 1986-06-09 1987-12-18
JPH0574272U (ja) * 1992-03-11 1993-10-12 吉村産業株式会社 釣 元

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198974U (en, 2012) * 1986-06-09 1987-12-18
JPH0574272U (ja) * 1992-03-11 1993-10-12 吉村産業株式会社 釣 元

Also Published As

Publication number Publication date
JPS56100479A (en) 1981-08-12

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