JPS61223183A - 菱面体晶系窒化ホウ素の製造方法 - Google Patents

菱面体晶系窒化ホウ素の製造方法

Info

Publication number
JPS61223183A
JPS61223183A JP60041019A JP4101985A JPS61223183A JP S61223183 A JPS61223183 A JP S61223183A JP 60041019 A JP60041019 A JP 60041019A JP 4101985 A JP4101985 A JP 4101985A JP S61223183 A JPS61223183 A JP S61223183A
Authority
JP
Japan
Prior art keywords
boron nitride
rhombohedral
gas
gaseous
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60041019A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643948B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Toshiaki Matsuda
松田　敏紹
Hiroyuki Nakae
中江　博之
Toshio Hirai
平井　敏雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Priority to JP60041019A priority Critical patent/JPS61223183A/ja
Priority to DE8686901511T priority patent/DE3685282D1/de
Priority to US06/887,096 priority patent/US4900526A/en
Priority to EP86901511A priority patent/EP0216932B1/en
Priority to PCT/JP1986/000095 priority patent/WO1986005169A1/ja
Publication of JPS61223183A publication Critical patent/JPS61223183A/ja
Publication of JPS643948B2 publication Critical patent/JPS643948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
JP60041019A 1985-03-04 1985-03-04 菱面体晶系窒化ホウ素の製造方法 Granted JPS61223183A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60041019A JPS61223183A (ja) 1985-03-04 1985-03-04 菱面体晶系窒化ホウ素の製造方法
DE8686901511T DE3685282D1 (de) 1985-03-04 1986-02-27 Rhombohedrisches polykristallines bornitrid und dessen herstellung.
US06/887,096 US4900526A (en) 1985-03-04 1986-02-27 Polycrystalline rhombohedral boron nitride and method of producing the same
EP86901511A EP0216932B1 (en) 1985-03-04 1986-02-27 Rhombohedral polycrystalline boron nitride and process for its production
PCT/JP1986/000095 WO1986005169A1 (en) 1985-03-04 1986-02-27 Rhombohedral polycrystalline boron nitride and process for its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60041019A JPS61223183A (ja) 1985-03-04 1985-03-04 菱面体晶系窒化ホウ素の製造方法

Publications (2)

Publication Number Publication Date
JPS61223183A true JPS61223183A (ja) 1986-10-03
JPS643948B2 JPS643948B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-01-24

Family

ID=12596679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60041019A Granted JPS61223183A (ja) 1985-03-04 1985-03-04 菱面体晶系窒化ホウ素の製造方法

Country Status (5)

Country Link
US (1) US4900526A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0216932B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS61223183A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3685282D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1986005169A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02296706A (ja) * 1989-05-02 1990-12-07 Rhone Poulenc Chim 非晶質或いは乱層状で、特に球状形を有する窒化硼素及びその製造方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0314807B1 (en) * 1987-05-12 1993-01-27 Kabushiki Kaisha Kouransha Molten metal container
US5043120A (en) * 1988-11-10 1991-08-27 The General Electric Company Process for preparing polycrystalline CBN ceramic masses
WO1990013513A1 (en) * 1989-05-12 1990-11-15 University Of Florida Combustion synthesis of materials using microwave energy
GB2236540A (en) * 1989-07-07 1991-04-10 United Technologies Corp Boron nitride coated fibres
JPH08189B2 (ja) * 1989-08-04 1996-01-10 新技術事業団 立方晶窒化ほう素の製造方法
US5053365A (en) * 1990-02-28 1991-10-01 The Ohio State University Research Foundation Method for the low temperature preparation of amorphous boron nitride using alkali metal and haloborazines
EP0450125B1 (de) * 1990-04-06 1994-10-26 Siemens Aktiengesellschaft Verfahren zur Herstellung von mikrokristallin kubischen Bornitridschichten
JP2729289B2 (ja) * 1990-08-08 1998-03-18 アドヴァンスト・セラミックス・コーポレイション 亀裂のない熱分解窒化硼素を炭素構造体上に形成する方法及び該方法から得られた物品
US5079038A (en) * 1990-10-05 1992-01-07 The United States Of America As Represented By The United States Department Of Energy Hot filament CVD of boron nitride films
DE4113791A1 (de) * 1991-04-26 1992-10-29 Solvay Deutschland Verfahren zur abscheidung einer bor und stickstoff enthaltenden schicht
US6197243B1 (en) 1993-04-16 2001-03-06 Ut Battelle, Llc Heat distribution ceramic processing method
GB2313846B (en) * 1994-09-28 1999-05-26 Advanced Ceramics Corp High density flash evaporator
DE19714014A1 (de) * 1997-04-04 1998-10-08 Max Planck Gesellschaft Herstellung dünner Schichten aus kubischem Bornitrid
US6080446A (en) * 1997-08-21 2000-06-27 Anelva Corporation Method of depositing titanium nitride thin film and CVD deposition apparatus
RU2167224C1 (ru) * 1999-09-08 2001-05-20 Общество с ограниченной ответственностью "Ромбонит" Пиролитический ромбоэдрический нитрид бора и способ его получения
RU2160224C1 (ru) * 1999-09-08 2000-12-10 Общество с ограниченной ответственностью "Ромбонит" Способ получения пиролитического нитрида бора
US7510742B2 (en) * 2005-11-18 2009-03-31 United Technologies Corporation Multilayered boron nitride/silicon nitride fiber coatings
US20090169781A1 (en) * 2007-12-31 2009-07-02 Marc Schaepkens Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
KR20130041120A (ko) * 2010-07-21 2013-04-24 도쿄엘렉트론가부시키가이샤 층간 절연층 형성 방법 및 반도체 장치
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
US10983537B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller
US20220041446A1 (en) * 2018-09-27 2022-02-10 Sumitomo Electric Hardmetal Corp. Polycrystalline cubic boron nitride and method for manufacturing the same
CN115261978B (zh) * 2022-08-29 2023-08-04 东南大学 一种制备具有铁电性的ab堆垛的多层氮化硼薄膜的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023400A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-07-04 1975-03-13
JPS55141561A (en) * 1979-04-23 1980-11-05 Chobe Taguchi Surface treatment of metallic material
JPS6015933A (ja) * 1983-07-07 1985-01-26 Nec Corp 薄膜形成法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152006A (en) * 1961-06-29 1964-10-06 High Temperature Materials Inc Boron nitride coating and a process of producing the same
GB1203078A (en) * 1966-09-28 1970-08-26 Raytheon Co Isotropic boron nitride and method of making same
JPS602244B2 (ja) * 1981-10-26 1985-01-21 科学技術庁無機材質研究所長 菱面体晶窒化ほう素の製造法
DE3463641D1 (en) * 1983-11-11 1987-06-19 Japan Res Dev Corp Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023400A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-07-04 1975-03-13
JPS55141561A (en) * 1979-04-23 1980-11-05 Chobe Taguchi Surface treatment of metallic material
JPS6015933A (ja) * 1983-07-07 1985-01-26 Nec Corp 薄膜形成法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02296706A (ja) * 1989-05-02 1990-12-07 Rhone Poulenc Chim 非晶質或いは乱層状で、特に球状形を有する窒化硼素及びその製造方法

Also Published As

Publication number Publication date
EP0216932A4 (en) 1989-07-26
EP0216932B1 (en) 1992-05-13
WO1986005169A1 (en) 1986-09-12
JPS643948B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-01-24
EP0216932A1 (en) 1987-04-08
US4900526A (en) 1990-02-13
DE3685282D1 (de) 1992-06-17

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