JPS61213377A - プラズマデポジシヨン法及びその装置 - Google Patents

プラズマデポジシヨン法及びその装置

Info

Publication number
JPS61213377A
JPS61213377A JP5224385A JP5224385A JPS61213377A JP S61213377 A JPS61213377 A JP S61213377A JP 5224385 A JP5224385 A JP 5224385A JP 5224385 A JP5224385 A JP 5224385A JP S61213377 A JPS61213377 A JP S61213377A
Authority
JP
Japan
Prior art keywords
magnetic field
plasma deposition
vacuum chamber
sample
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5224385A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0521986B2 (en, 2012
Inventor
Takeshi Watanabe
渡辺　猛志
Mitsuo Nakatani
中谷　光雄
Susumu Tsujiku
都竹　進
Masaaki Sato
正昭 佐藤
Masaaki Okunaka
正昭 奥中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5224385A priority Critical patent/JPS61213377A/ja
Publication of JPS61213377A publication Critical patent/JPS61213377A/ja
Publication of JPH0521986B2 publication Critical patent/JPH0521986B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP5224385A 1985-03-18 1985-03-18 プラズマデポジシヨン法及びその装置 Granted JPS61213377A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5224385A JPS61213377A (ja) 1985-03-18 1985-03-18 プラズマデポジシヨン法及びその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5224385A JPS61213377A (ja) 1985-03-18 1985-03-18 プラズマデポジシヨン法及びその装置

Publications (2)

Publication Number Publication Date
JPS61213377A true JPS61213377A (ja) 1986-09-22
JPH0521986B2 JPH0521986B2 (en, 2012) 1993-03-26

Family

ID=12909281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5224385A Granted JPS61213377A (ja) 1985-03-18 1985-03-18 プラズマデポジシヨン法及びその装置

Country Status (1)

Country Link
JP (1) JPS61213377A (en, 2012)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292443A (ja) * 1985-10-18 1987-04-27 Matsushita Electric Ind Co Ltd 薄膜形成方法及びエッチング方法
JPS63283018A (ja) * 1986-12-29 1988-11-18 Sumitomo Metal Ind Ltd プラズマ装置
JPH01191780A (ja) * 1988-01-27 1989-08-01 Semiconductor Energy Lab Co Ltd 薄膜形成装置
US4926791A (en) * 1987-04-27 1990-05-22 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma apparatus employing helmholtz coils and ioffe bars
US5016564A (en) * 1986-12-29 1991-05-21 Sumitomo Metal Industries Ltd. Plasma apparatus
US5099790A (en) * 1988-07-01 1992-03-31 Canon Kabushiki Kaisha Microwave plasma chemical vapor deposition apparatus
US5133825A (en) * 1987-04-08 1992-07-28 Hi Tachi, Ltd. Plasma generating apparatus
US5203959A (en) * 1987-04-27 1993-04-20 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma etching and deposition method employing first and second magnetic fields
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
JPH08203693A (ja) * 1995-08-28 1996-08-09 Semiconductor Energy Lab Co Ltd 薄膜形成装置
US5565247A (en) * 1991-08-30 1996-10-15 Canon Kabushiki Kaisha Process for forming a functional deposited film

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292443A (ja) * 1985-10-18 1987-04-27 Matsushita Electric Ind Co Ltd 薄膜形成方法及びエッチング方法
JPS63283018A (ja) * 1986-12-29 1988-11-18 Sumitomo Metal Ind Ltd プラズマ装置
US5016564A (en) * 1986-12-29 1991-05-21 Sumitomo Metal Industries Ltd. Plasma apparatus
US5019117A (en) * 1986-12-29 1991-05-28 Sumitomo Metal Industries Ltd. Plasma apparatus
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
US5133825A (en) * 1987-04-08 1992-07-28 Hi Tachi, Ltd. Plasma generating apparatus
US5203959A (en) * 1987-04-27 1993-04-20 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma etching and deposition method employing first and second magnetic fields
US4926791A (en) * 1987-04-27 1990-05-22 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma apparatus employing helmholtz coils and ioffe bars
US5685913A (en) * 1987-04-27 1997-11-11 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US5858259A (en) * 1987-04-27 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6217661B1 (en) 1987-04-27 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6423383B1 (en) 1987-04-27 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6838126B2 (en) 1987-04-27 2005-01-04 Semiconductor Energy Laboratory Co., Ltd. Method for forming I-carbon film
JPH01191780A (ja) * 1988-01-27 1989-08-01 Semiconductor Energy Lab Co Ltd 薄膜形成装置
US5099790A (en) * 1988-07-01 1992-03-31 Canon Kabushiki Kaisha Microwave plasma chemical vapor deposition apparatus
US5565247A (en) * 1991-08-30 1996-10-15 Canon Kabushiki Kaisha Process for forming a functional deposited film
JPH08203693A (ja) * 1995-08-28 1996-08-09 Semiconductor Energy Lab Co Ltd 薄膜形成装置

Also Published As

Publication number Publication date
JPH0521986B2 (en, 2012) 1993-03-26

Similar Documents

Publication Publication Date Title
US5401351A (en) Radio frequency electron cyclotron resonance plasma etching apparatus
JPS593018A (ja) プラズマデポジシヨンによるシリコン系膜の製造方法
JPH06342771A (ja) ドライエッチング装置
JP3254069B2 (ja) プラズマ装置
JPS61213377A (ja) プラズマデポジシヨン法及びその装置
US5366586A (en) Plasma formation using electron cyclotron resonance and method for processing substrate by using the same
JPS63155728A (ja) プラズマ処理装置
JPH01184923A (ja) プラズマ処理装置及びプラズマ処理方法
JP3294839B2 (ja) プラズマ処理方法
JPS60154620A (ja) マイクロ波プラズマ処理方法及び装置
JPH11204297A (ja) プラズマ処理装置及びプラズマ処理方法
JP2003077904A (ja) プラズマ処理装置及びプラズマ処理方法
JPS63103088A (ja) エッチング方法及びその装置
JPH0530500B2 (en, 2012)
JPS6267822A (ja) プラズマ処理装置
JPH0687440B2 (ja) マイクロ波プラズマ発生方法
JP2750430B2 (ja) プラズマ制御方法
JP3205542B2 (ja) プラズマ装置
JP2003077903A (ja) プラズマ処理装置及びプラズマ処理方法
JPS61222533A (ja) プラズマ処理装置
JPH01205519A (ja) プラズマ処理装置
JPH0578849A (ja) 有磁場マイクロ波プラズマ処理装置
JPH025413A (ja) プラズマ処理装置
JPS63274148A (ja) マイクロ波プラズマ処理装置
JPH04141594A (ja) プラズマ処理装置及び該装置を用いたプラズマ処理方法