JPS6120153B2 - - Google Patents
Info
- Publication number
- JPS6120153B2 JPS6120153B2 JP53110157A JP11015778A JPS6120153B2 JP S6120153 B2 JPS6120153 B2 JP S6120153B2 JP 53110157 A JP53110157 A JP 53110157A JP 11015778 A JP11015778 A JP 11015778A JP S6120153 B2 JPS6120153 B2 JP S6120153B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- gate
- forming
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11015778A JPS5536976A (en) | 1978-09-05 | 1978-09-05 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11015778A JPS5536976A (en) | 1978-09-05 | 1978-09-05 | Production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5536976A JPS5536976A (en) | 1980-03-14 |
| JPS6120153B2 true JPS6120153B2 (enrdf_load_stackoverflow) | 1986-05-21 |
Family
ID=14528489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11015778A Granted JPS5536976A (en) | 1978-09-05 | 1978-09-05 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5536976A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5749270A (en) * | 1980-09-09 | 1982-03-23 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US4725872A (en) * | 1985-02-25 | 1988-02-16 | Tektronix, Inc. | Fast channel single phase buried channel CCD |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5389374A (en) * | 1977-01-18 | 1978-08-05 | Toshiba Corp | Production of semiconductor device |
-
1978
- 1978-09-05 JP JP11015778A patent/JPS5536976A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5536976A (en) | 1980-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4716131A (en) | Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film | |
| JPS6128232B2 (enrdf_load_stackoverflow) | ||
| JPH0465548B2 (enrdf_load_stackoverflow) | ||
| JPH0640582B2 (ja) | 絶縁ゲ−ト電界効果トランジスタの製造方法 | |
| US4131909A (en) | Semiconductor integrated circuit isolated through dielectric material and a method for manufacturing the same | |
| JPH06196703A (ja) | 薄膜トランジスタ及びその製造方法 | |
| US4123300A (en) | Integrated circuit process utilizing lift-off techniques | |
| JPS6120153B2 (enrdf_load_stackoverflow) | ||
| GB1524685A (en) | Charge-transfer devices | |
| JP2653092B2 (ja) | 相補型薄膜トランジスタ及びその製造方法 | |
| US4216573A (en) | Three mask process for making field effect transistors | |
| JPS6115591B2 (enrdf_load_stackoverflow) | ||
| JPS6213826B2 (enrdf_load_stackoverflow) | ||
| JPS5940307B2 (ja) | 絶縁ゲ−ト形電界効果トランジスタの製法 | |
| GB1495377A (en) | Method of manufacturing a charge transfer device | |
| JPS61290775A (ja) | 半導体装置 | |
| JPS6115592B2 (enrdf_load_stackoverflow) | ||
| JPS627708B2 (enrdf_load_stackoverflow) | ||
| JPS60249356A (ja) | 半導体装置の製造方法 | |
| JP2945023B2 (ja) | 薄膜トランジスタの製造方法 | |
| GB1361357A (en) | Production of semiconductor devices | |
| JPS6038026B2 (ja) | 半導体装置の製造方法 | |
| JPS59188957A (ja) | 半導体装置用キヤパシタの製造方法 | |
| JPH01255271A (ja) | 半導体集積回路装置 | |
| JPH022643A (ja) | 電荷結合素子の製造方法 |