JPS6120149B2 - - Google Patents
Info
- Publication number
- JPS6120149B2 JPS6120149B2 JP52063330A JP6333077A JPS6120149B2 JP S6120149 B2 JPS6120149 B2 JP S6120149B2 JP 52063330 A JP52063330 A JP 52063330A JP 6333077 A JP6333077 A JP 6333077A JP S6120149 B2 JPS6120149 B2 JP S6120149B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- pair
- misfet
- channel
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6333077A JPS53148989A (en) | 1977-06-01 | 1977-06-01 | Mis-type semiconductor memory device |
DE2760086A DE2760086C2 (en, 2012) | 1976-07-26 | 1977-07-25 | |
DE19772733514 DE2733514A1 (de) | 1976-07-26 | 1977-07-25 | Halbleiter-vorrichtungen |
US07/684,867 US5359562A (en) | 1976-07-26 | 1991-04-15 | Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry |
US08/230,814 US5446689A (en) | 1976-07-26 | 1994-04-21 | Semiconductor memory having a polycrystalline silicon load resistor and CMOS peripheral circuitry |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6333077A JPS53148989A (en) | 1977-06-01 | 1977-06-01 | Mis-type semiconductor memory device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59028514A Division JPS59229788A (ja) | 1984-02-20 | 1984-02-20 | Mis型半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53148989A JPS53148989A (en) | 1978-12-26 |
JPS6120149B2 true JPS6120149B2 (en, 2012) | 1986-05-21 |
Family
ID=13226121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6333077A Granted JPS53148989A (en) | 1976-07-26 | 1977-06-01 | Mis-type semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53148989A (en, 2012) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0365455U (en, 2012) * | 1989-10-25 | 1991-06-26 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2559360B2 (ja) * | 1984-11-28 | 1996-12-04 | 株式会社日立製作所 | 半導体メモリ装置 |
US4747082A (en) * | 1984-11-28 | 1988-05-24 | Hitachi Ltd. | Semiconductor memory with automatic refresh means |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3879621A (en) * | 1973-04-18 | 1975-04-22 | Ibm | Sense amplifier |
JPS584459B2 (ja) * | 1973-06-01 | 1983-01-26 | 株式会社日立製作所 | フリツプフロツプ回路装置 |
-
1977
- 1977-06-01 JP JP6333077A patent/JPS53148989A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0365455U (en, 2012) * | 1989-10-25 | 1991-06-26 |
Also Published As
Publication number | Publication date |
---|---|
JPS53148989A (en) | 1978-12-26 |
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