JPS6224876B2 - - Google Patents
Info
- Publication number
- JPS6224876B2 JPS6224876B2 JP59028514A JP2851484A JPS6224876B2 JP S6224876 B2 JPS6224876 B2 JP S6224876B2 JP 59028514 A JP59028514 A JP 59028514A JP 2851484 A JP2851484 A JP 2851484A JP S6224876 B2 JPS6224876 B2 JP S6224876B2
- Authority
- JP
- Japan
- Prior art keywords
- pair
- channel
- misfet
- memory cell
- data lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000006880 cross-coupling reaction Methods 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000000295 complement effect Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59028514A JPS59229788A (ja) | 1984-02-20 | 1984-02-20 | Ｍｉｓ型半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59028514A JPS59229788A (ja) | 1984-02-20 | 1984-02-20 | Ｍｉｓ型半導体記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6333077A Division JPS53148989A (en) | 1976-07-26 | 1977-06-01 | Mis-type semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59229788A JPS59229788A (ja) | 1984-12-24 |
| JPS6224876B2 true JPS6224876B2 (en, 2012) | 1987-05-30 |
Family
ID=12250789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59028514A Granted JPS59229788A (ja) | 1984-02-20 | 1984-02-20 | Ｍｉｓ型半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59229788A (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63304491A (ja) * | 1987-06-04 | 1988-12-12 | Mitsubishi Electric Corp | 半導体メモリ |
-
1984
- 1984-02-20 JP JP59028514A patent/JPS59229788A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59229788A (ja) | 1984-12-24 |
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