JPS61183986A - 半導体発光装置の製造方法 - Google Patents

半導体発光装置の製造方法

Info

Publication number
JPS61183986A
JPS61183986A JP60022927A JP2292785A JPS61183986A JP S61183986 A JPS61183986 A JP S61183986A JP 60022927 A JP60022927 A JP 60022927A JP 2292785 A JP2292785 A JP 2292785A JP S61183986 A JPS61183986 A JP S61183986A
Authority
JP
Japan
Prior art keywords
semiconductor
layer
light emitting
substrate
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60022927A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0574956B2 (enrdf_load_stackoverflow
Inventor
Hiroko Nagasaka
長坂　博子
Naoto Mogi
茂木　直人
Naohiro Shimada
島田　直弘
Tadashi Komatsubara
小松原　正
Masaru Nakamura
優 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60022927A priority Critical patent/JPS61183986A/ja
Publication of JPS61183986A publication Critical patent/JPS61183986A/ja
Publication of JPH0574956B2 publication Critical patent/JPH0574956B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP60022927A 1985-02-08 1985-02-08 半導体発光装置の製造方法 Granted JPS61183986A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60022927A JPS61183986A (ja) 1985-02-08 1985-02-08 半導体発光装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60022927A JPS61183986A (ja) 1985-02-08 1985-02-08 半導体発光装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61183986A true JPS61183986A (ja) 1986-08-16
JPH0574956B2 JPH0574956B2 (enrdf_load_stackoverflow) 1993-10-19

Family

ID=12096261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60022927A Granted JPS61183986A (ja) 1985-02-08 1985-02-08 半導体発光装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61183986A (enrdf_load_stackoverflow)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137677A (ja) * 1987-11-25 1989-05-30 Ricoh Co Ltd 端面型発光ダイオードアレー素子
US5608750A (en) * 1993-07-29 1997-03-04 Hitachi, Ltd. Semiconductor laser device and a method for the manufacture thereof
WO1998000895A1 (en) * 1996-06-28 1998-01-08 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
WO1998048492A1 (en) * 1997-04-23 1998-10-29 Honeywell Inc. Electronic devices formed from pre-patterned structures that are bonded
JP2000277804A (ja) * 1995-06-15 2000-10-06 Nichia Chem Ind Ltd 窒化物半導体素子の製造方法及び窒化物半導体素子、並びに発光素子
US7105857B2 (en) 2002-07-08 2006-09-12 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
JP2006319374A (ja) * 1993-03-19 2006-11-24 Philips Lumileds Lightng Co Llc 発光ダイオード層と接合されたウェーハとの間の反射性境界面
JP2007189242A (ja) * 2000-08-08 2007-07-26 Osram Opto Semiconductors Gmbh オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法
US7301175B2 (en) 2001-10-12 2007-11-27 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7547921B2 (en) 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
JP2010087360A (ja) * 2008-10-01 2010-04-15 Kyoto Institute Of Technology 半導体基板の製造方法および半導体基板
JP2011003934A (ja) * 1999-06-09 2011-01-06 Toshiba Corp 積層体および発光素子
JP2011507262A (ja) * 2007-12-14 2011-03-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 結合界面を有する発光デバイス
JPWO2013038964A1 (ja) * 2011-09-13 2015-03-26 電気化学工業株式会社 Ｌｅｄ発光素子保持基板用クラッド材及びその製造方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137677A (ja) * 1987-11-25 1989-05-30 Ricoh Co Ltd 端面型発光ダイオードアレー素子
JP2006319374A (ja) * 1993-03-19 2006-11-24 Philips Lumileds Lightng Co Llc 発光ダイオード層と接合されたウェーハとの間の反射性境界面
US5608750A (en) * 1993-07-29 1997-03-04 Hitachi, Ltd. Semiconductor laser device and a method for the manufacture thereof
JP2000277804A (ja) * 1995-06-15 2000-10-06 Nichia Chem Ind Ltd 窒化物半導体素子の製造方法及び窒化物半導体素子、並びに発光素子
WO1998000895A1 (en) * 1996-06-28 1998-01-08 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
EP1176680A1 (en) * 1996-06-28 2002-01-30 Honeywell Inc. Current confinement for vertical cavity surface emitting laser
WO1998048492A1 (en) * 1997-04-23 1998-10-29 Honeywell Inc. Electronic devices formed from pre-patterned structures that are bonded
JP2011003934A (ja) * 1999-06-09 2011-01-06 Toshiba Corp 積層体および発光素子
JP2007189242A (ja) * 2000-08-08 2007-07-26 Osram Opto Semiconductors Gmbh オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法
US7547921B2 (en) 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
US7301175B2 (en) 2001-10-12 2007-11-27 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7390684B2 (en) 2001-10-12 2008-06-24 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7378334B2 (en) 2002-07-08 2008-05-27 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US7105857B2 (en) 2002-07-08 2006-09-12 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US8030665B2 (en) 2002-07-08 2011-10-04 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
JP2011507262A (ja) * 2007-12-14 2011-03-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 結合界面を有する発光デバイス
US9905730B2 (en) 2007-12-14 2018-02-27 Lumileds Llc Light emitting device with bonded interface
JP2010087360A (ja) * 2008-10-01 2010-04-15 Kyoto Institute Of Technology 半導体基板の製造方法および半導体基板
JPWO2013038964A1 (ja) * 2011-09-13 2015-03-26 電気化学工業株式会社 Ｌｅｄ発光素子保持基板用クラッド材及びその製造方法

Also Published As

Publication number Publication date
JPH0574956B2 (enrdf_load_stackoverflow) 1993-10-19

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