JPS61183986A - 半導体発光装置の製造方法 - Google Patents
半導体発光装置の製造方法Info
- Publication number
- JPS61183986A JPS61183986A JP60022927A JP2292785A JPS61183986A JP S61183986 A JPS61183986 A JP S61183986A JP 60022927 A JP60022927 A JP 60022927A JP 2292785 A JP2292785 A JP 2292785A JP S61183986 A JPS61183986 A JP S61183986A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor
- mirror
- layer
- polished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000005253 cladding Methods 0.000 claims description 25
- 230000000694 effects Effects 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 7
- 238000002513 implantation Methods 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 abstract description 2
- 125000005842 heteroatom Chemical group 0.000 abstract 2
- 208000031481 Pathologic Constriction Diseases 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 78
- 239000013078 crystal Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 208000005156 Dehydration Diseases 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910018949 PtAu Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60022927A JPS61183986A (ja) | 1985-02-08 | 1985-02-08 | 半導体発光装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60022927A JPS61183986A (ja) | 1985-02-08 | 1985-02-08 | 半導体発光装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61183986A true JPS61183986A (ja) | 1986-08-16 |
| JPH0574956B2 JPH0574956B2 (enrdf_load_stackoverflow) | 1993-10-19 |
Family
ID=12096261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60022927A Granted JPS61183986A (ja) | 1985-02-08 | 1985-02-08 | 半導体発光装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61183986A (enrdf_load_stackoverflow) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01137677A (ja) * | 1987-11-25 | 1989-05-30 | Ricoh Co Ltd | 端面型発光ダイオードアレー素子 |
| US5608750A (en) * | 1993-07-29 | 1997-03-04 | Hitachi, Ltd. | Semiconductor laser device and a method for the manufacture thereof |
| WO1998000895A1 (en) * | 1996-06-28 | 1998-01-08 | Honeywell Inc. | Current confinement for a vertical cavity surface emitting laser |
| WO1998048492A1 (en) * | 1997-04-23 | 1998-10-29 | Honeywell Inc. | Electronic devices formed from pre-patterned structures that are bonded |
| JP2000277804A (ja) * | 1995-06-15 | 2000-10-06 | Nichia Chem Ind Ltd | 窒化物半導体素子の製造方法及び窒化物半導体素子、並びに発光素子 |
| US7105857B2 (en) | 2002-07-08 | 2006-09-12 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
| JP2006319374A (ja) * | 1993-03-19 | 2006-11-24 | Philips Lumileds Lightng Co Llc | 発光ダイオード層と接合されたウェーハとの間の反射性境界面 |
| JP2007189242A (ja) * | 2000-08-08 | 2007-07-26 | Osram Opto Semiconductors Gmbh | オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 |
| US7301175B2 (en) | 2001-10-12 | 2007-11-27 | Nichia Corporation | Light emitting apparatus and method of manufacturing the same |
| US7547921B2 (en) | 2000-08-08 | 2009-06-16 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
| JP2010087360A (ja) * | 2008-10-01 | 2010-04-15 | Kyoto Institute Of Technology | 半導体基板の製造方法および半導体基板 |
| JP2011003934A (ja) * | 1999-06-09 | 2011-01-06 | Toshiba Corp | 積層体および発光素子 |
| JP2011507262A (ja) * | 2007-12-14 | 2011-03-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 結合界面を有する発光デバイス |
| JPWO2013038964A1 (ja) * | 2011-09-13 | 2015-03-26 | 電気化学工業株式会社 | Ｌｅｄ発光素子保持基板用クラッド材及びその製造方法 |
-
1985
- 1985-02-08 JP JP60022927A patent/JPS61183986A/ja active Granted
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01137677A (ja) * | 1987-11-25 | 1989-05-30 | Ricoh Co Ltd | 端面型発光ダイオードアレー素子 |
| JP2006319374A (ja) * | 1993-03-19 | 2006-11-24 | Philips Lumileds Lightng Co Llc | 発光ダイオード層と接合されたウェーハとの間の反射性境界面 |
| US5608750A (en) * | 1993-07-29 | 1997-03-04 | Hitachi, Ltd. | Semiconductor laser device and a method for the manufacture thereof |
| JP2000277804A (ja) * | 1995-06-15 | 2000-10-06 | Nichia Chem Ind Ltd | 窒化物半導体素子の製造方法及び窒化物半導体素子、並びに発光素子 |
| WO1998000895A1 (en) * | 1996-06-28 | 1998-01-08 | Honeywell Inc. | Current confinement for a vertical cavity surface emitting laser |
| EP1176680A1 (en) * | 1996-06-28 | 2002-01-30 | Honeywell Inc. | Current confinement for vertical cavity surface emitting laser |
| WO1998048492A1 (en) * | 1997-04-23 | 1998-10-29 | Honeywell Inc. | Electronic devices formed from pre-patterned structures that are bonded |
| JP2011003934A (ja) * | 1999-06-09 | 2011-01-06 | Toshiba Corp | 積層体および発光素子 |
| JP2007189242A (ja) * | 2000-08-08 | 2007-07-26 | Osram Opto Semiconductors Gmbh | オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 |
| US7547921B2 (en) | 2000-08-08 | 2009-06-16 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
| US7301175B2 (en) | 2001-10-12 | 2007-11-27 | Nichia Corporation | Light emitting apparatus and method of manufacturing the same |
| US7390684B2 (en) | 2001-10-12 | 2008-06-24 | Nichia Corporation | Light emitting apparatus and method of manufacturing the same |
| US7378334B2 (en) | 2002-07-08 | 2008-05-27 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
| US7105857B2 (en) | 2002-07-08 | 2006-09-12 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
| US8030665B2 (en) | 2002-07-08 | 2011-10-04 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
| JP2011507262A (ja) * | 2007-12-14 | 2011-03-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 結合界面を有する発光デバイス |
| US9905730B2 (en) | 2007-12-14 | 2018-02-27 | Lumileds Llc | Light emitting device with bonded interface |
| JP2010087360A (ja) * | 2008-10-01 | 2010-04-15 | Kyoto Institute Of Technology | 半導体基板の製造方法および半導体基板 |
| JPWO2013038964A1 (ja) * | 2011-09-13 | 2015-03-26 | 電気化学工業株式会社 | Ｌｅｄ発光素子保持基板用クラッド材及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0574956B2 (enrdf_load_stackoverflow) | 1993-10-19 |
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