JPS61171172A - Ｍｅｓｆｅｔの製造方法 - Google Patents

Ｍｅｓｆｅｔの製造方法

Info

Publication number
JPS61171172A
JPS61171172A JP60012164A JP1216485A JPS61171172A JP S61171172 A JPS61171172 A JP S61171172A JP 60012164 A JP60012164 A JP 60012164A JP 1216485 A JP1216485 A JP 1216485A JP S61171172 A JPS61171172 A JP S61171172A
Authority
JP
Japan
Prior art keywords
metallic film
electrode
source
gate electrode
photo resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60012164A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328061B2 (enrdf_load_stackoverflow
Inventor
Tsutomu Igarashi
勉 五十嵐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60012164A priority Critical patent/JPS61171172A/ja
Publication of JPS61171172A publication Critical patent/JPS61171172A/ja
Publication of JPH0328061B2 publication Critical patent/JPH0328061B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60012164A 1985-01-25 1985-01-25 Ｍｅｓｆｅｔの製造方法 Granted JPS61171172A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60012164A JPS61171172A (ja) 1985-01-25 1985-01-25 Ｍｅｓｆｅｔの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60012164A JPS61171172A (ja) 1985-01-25 1985-01-25 Ｍｅｓｆｅｔの製造方法

Publications (2)

Publication Number Publication Date
JPS61171172A true JPS61171172A (ja) 1986-08-01
JPH0328061B2 JPH0328061B2 (enrdf_load_stackoverflow) 1991-04-17

Family

ID=11797799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60012164A Granted JPS61171172A (ja) 1985-01-25 1985-01-25 Ｍｅｓｆｅｔの製造方法

Country Status (1)

Country Link
JP (1) JPS61171172A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0526521U (ja) * 1991-09-26 1993-04-06 日産デイーゼル工業株式会社 減衰力制御装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598378A (ja) * 1982-07-06 1984-01-17 Nec Corp ＧａＡｓＦＥＴ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598378A (ja) * 1982-07-06 1984-01-17 Nec Corp ＧａＡｓＦＥＴ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0526521U (ja) * 1991-09-26 1993-04-06 日産デイーゼル工業株式会社 減衰力制御装置

Also Published As

Publication number Publication date
JPH0328061B2 (enrdf_load_stackoverflow) 1991-04-17

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term