JPH0328061B2 - - Google Patents

Info

Publication number
JPH0328061B2
JPH0328061B2 JP60012164A JP1216485A JPH0328061B2 JP H0328061 B2 JPH0328061 B2 JP H0328061B2 JP 60012164 A JP60012164 A JP 60012164A JP 1216485 A JP1216485 A JP 1216485A JP H0328061 B2 JPH0328061 B2 JP H0328061B2
Authority
JP
Japan
Prior art keywords
electrode
source
drain
metal film
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60012164A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61171172A (ja
Inventor
Tsutomu Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60012164A priority Critical patent/JPS61171172A/ja
Publication of JPS61171172A publication Critical patent/JPS61171172A/ja
Publication of JPH0328061B2 publication Critical patent/JPH0328061B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60012164A 1985-01-25 1985-01-25 Ｍｅｓｆｅｔの製造方法 Granted JPS61171172A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60012164A JPS61171172A (ja) 1985-01-25 1985-01-25 Ｍｅｓｆｅｔの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60012164A JPS61171172A (ja) 1985-01-25 1985-01-25 Ｍｅｓｆｅｔの製造方法

Publications (2)

Publication Number Publication Date
JPS61171172A JPS61171172A (ja) 1986-08-01
JPH0328061B2 true JPH0328061B2 (enrdf_load_stackoverflow) 1991-04-17

Family

ID=11797799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60012164A Granted JPS61171172A (ja) 1985-01-25 1985-01-25 Ｍｅｓｆｅｔの製造方法

Country Status (1)

Country Link
JP (1) JPS61171172A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0526521U (ja) * 1991-09-26 1993-04-06 日産デイーゼル工業株式会社 減衰力制御装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598378A (ja) * 1982-07-06 1984-01-17 Nec Corp ＧａＡｓＦＥＴ

Also Published As

Publication number Publication date
JPS61171172A (ja) 1986-08-01

Similar Documents

Publication Publication Date Title
US5310695A (en) Interconnect structure in semiconductor device and method for making the same
JPH0328061B2 (enrdf_load_stackoverflow)
JPS6222536B2 (enrdf_load_stackoverflow)
US6383853B2 (en) Method of fabricating semiconductor device
JP2853940B2 (ja) 半導体装置の製造方法
JP2523985B2 (ja) 半導体装置の製造方法
JP3144089B2 (ja) 電界効果トランジスタの製造方法
JPS628575A (ja) 半導体装置
JPS60244075A (ja) Ｅ／ｄ構成集積回路の製造方法
JPS5838945B2 (ja) シヨット障壁型電界効果トランジスタの製造方法
JPS6252957B2 (enrdf_load_stackoverflow)
JPH0411741A (ja) 電界効果トランジスタおよびその製造方法
JPH0228333A (ja) 半導体装置の製造方法
JPH03145738A (ja) ゲート電極形成方法
JP4072248B2 (ja) 半導体装置の製造方法
JPH0358433A (ja) 電界効果トランジスタの製造方法
JPS6112079A (ja) 半導体素子の製造方法
JPS61263168A (ja) 電界効果トランジスタ
JPS58197883A (ja) 半導体装置の製造法
JPS617668A (ja) 半導体装置の製造方法
JPS59224179A (ja) 半導体素子の製造方法
JPH02189936A (ja) 半導体装置の製造方法
JPH0260213B2 (enrdf_load_stackoverflow)
JPH01218072A (ja) 半導体装置の製造方法
JPS6381864A (ja) 電界効果トランジスタの製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term