JPS61156854A - 相補型mos半導体装置の入力保護回路 - Google Patents
相補型mos半導体装置の入力保護回路Info
- Publication number
- JPS61156854A JPS61156854A JP59275419A JP27541984A JPS61156854A JP S61156854 A JPS61156854 A JP S61156854A JP 59275419 A JP59275419 A JP 59275419A JP 27541984 A JP27541984 A JP 27541984A JP S61156854 A JPS61156854 A JP S61156854A
- Authority
- JP
- Japan
- Prior art keywords
- input
- conductivity type
- clamp diode
- island
- protection circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59275419A JPS61156854A (ja) | 1984-12-28 | 1984-12-28 | 相補型mos半導体装置の入力保護回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59275419A JPS61156854A (ja) | 1984-12-28 | 1984-12-28 | 相補型mos半導体装置の入力保護回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61156854A true JPS61156854A (ja) | 1986-07-16 |
| JPH0312786B2 JPH0312786B2 (enExample) | 1991-02-21 |
Family
ID=17555240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59275419A Granted JPS61156854A (ja) | 1984-12-28 | 1984-12-28 | 相補型mos半導体装置の入力保護回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61156854A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8702576A (nl) * | 1987-07-23 | 1989-02-16 | Mitsubishi Electric Corp | Ingangsbeveiligingsinrichting van een halfgeleiderketeninrichting. |
| JPH03196565A (ja) * | 1989-12-26 | 1991-08-28 | Toshiba Micro Electron Kk | 入出力保護装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5763861A (en) * | 1980-10-06 | 1982-04-17 | Nec Corp | Semiconductor device |
| JPS58145155A (ja) * | 1982-02-24 | 1983-08-29 | Nec Corp | 半導体装置 |
| JPS58222573A (ja) * | 1982-06-18 | 1983-12-24 | Hitachi Ltd | 半導体集積回路装置 |
| JPS61135148A (ja) * | 1984-12-05 | 1986-06-23 | Mitsubishi Electric Corp | 半導体集積回路装置 |
-
1984
- 1984-12-28 JP JP59275419A patent/JPS61156854A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5763861A (en) * | 1980-10-06 | 1982-04-17 | Nec Corp | Semiconductor device |
| JPS58145155A (ja) * | 1982-02-24 | 1983-08-29 | Nec Corp | 半導体装置 |
| JPS58222573A (ja) * | 1982-06-18 | 1983-12-24 | Hitachi Ltd | 半導体集積回路装置 |
| JPS61135148A (ja) * | 1984-12-05 | 1986-06-23 | Mitsubishi Electric Corp | 半導体集積回路装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8702576A (nl) * | 1987-07-23 | 1989-02-16 | Mitsubishi Electric Corp | Ingangsbeveiligingsinrichting van een halfgeleiderketeninrichting. |
| JPH03196565A (ja) * | 1989-12-26 | 1991-08-28 | Toshiba Micro Electron Kk | 入出力保護装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0312786B2 (enExample) | 1991-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2633746B2 (ja) | 半導体装置 | |
| KR900004039A (ko) | 복합 mos 트랜지스터 및 그의 프리휠 다이오드로의 응용 | |
| JPS63208324A (ja) | 半導体集積回路装置 | |
| US5504361A (en) | Polarity-reversal protection for integrated electronic circuits in CMOS technology | |
| JPH0571145B2 (enExample) | ||
| US5227327A (en) | Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits | |
| JPH06151744A (ja) | 半導体入出力保護装置 | |
| JPH0254969A (ja) | Mos型半導体装置 | |
| JPH0763050B2 (ja) | 半導体装置 | |
| JPH0312786B2 (enExample) | ||
| EP0921619A3 (en) | A power source circuit of a semiconductor integrated circuit | |
| JPS6377155A (ja) | オ−プンドレイン出力回路 | |
| KR920702025A (ko) | Mos 소자용 과전압 보호회로 | |
| JP2669245B2 (ja) | 半導体装置 | |
| JPH04132266A (ja) | 半導体装置 | |
| JPH01185971A (ja) | 絶縁ゲート型半導体装置 | |
| JP3493713B2 (ja) | 半導体装置 | |
| JPH0669429A (ja) | 半導体回路 | |
| JPH0639455Y2 (ja) | Mos素子の保護回路装置 | |
| JPS6337646A (ja) | C−mos出力回路 | |
| JPS6395667A (ja) | 入力保護装置 | |
| JPS61285751A (ja) | Cmos型半導体装置 | |
| JPH0376153A (ja) | 半導体入出力保護装置 | |
| JPS61256819A (ja) | 電圧検出回路 | |
| JP2870923B2 (ja) | 半導体集積回路の保護回路 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| EXPY | Cancellation because of completion of term |