JPS61155291A - 気相成長方法 - Google Patents
気相成長方法Info
- Publication number
- JPS61155291A JPS61155291A JP27732884A JP27732884A JPS61155291A JP S61155291 A JPS61155291 A JP S61155291A JP 27732884 A JP27732884 A JP 27732884A JP 27732884 A JP27732884 A JP 27732884A JP S61155291 A JPS61155291 A JP S61155291A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- reaction tube
- crystal
- gas
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 31
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 2
- 239000007858 starting material Substances 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 20
- 229910052785 arsenic Inorganic materials 0.000 description 11
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 235000009781 Myrtillocactus geometrizans Nutrition 0.000 description 1
- 240000009125 Myrtillocactus geometrizans Species 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27732884A JPS61155291A (ja) | 1984-12-26 | 1984-12-26 | 気相成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27732884A JPS61155291A (ja) | 1984-12-26 | 1984-12-26 | 気相成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61155291A true JPS61155291A (ja) | 1986-07-14 |
| JPH0559080B2 JPH0559080B2 (enrdf_load_stackoverflow) | 1993-08-30 |
Family
ID=17581993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27732884A Granted JPS61155291A (ja) | 1984-12-26 | 1984-12-26 | 気相成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61155291A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1930485A4 (en) * | 2005-08-25 | 2010-06-09 | Sumitomo Electric Industries | METHOD FOR PRODUCING GAXIN 1 -XN (0 X 1) CRYSTAL, GAXIN 1 -XN (0 X 1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCING GAN CRYSTAL, GAN CRYSTAL SUBSTRATE AND PRODUCT |
-
1984
- 1984-12-26 JP JP27732884A patent/JPS61155291A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1930485A4 (en) * | 2005-08-25 | 2010-06-09 | Sumitomo Electric Industries | METHOD FOR PRODUCING GAXIN 1 -XN (0 X 1) CRYSTAL, GAXIN 1 -XN (0 X 1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCING GAN CRYSTAL, GAN CRYSTAL SUBSTRATE AND PRODUCT |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0559080B2 (enrdf_load_stackoverflow) | 1993-08-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |