JPH0572742B2 - - Google Patents

Info

Publication number
JPH0572742B2
JPH0572742B2 JP3080584A JP3080584A JPH0572742B2 JP H0572742 B2 JPH0572742 B2 JP H0572742B2 JP 3080584 A JP3080584 A JP 3080584A JP 3080584 A JP3080584 A JP 3080584A JP H0572742 B2 JPH0572742 B2 JP H0572742B2
Authority
JP
Japan
Prior art keywords
gan
crystal
reaction
gallium
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3080584A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60175412A (ja
Inventor
Toshiharu Kawabata
Susumu Furuike
Toshio Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59030805A priority Critical patent/JPS60175412A/ja
Publication of JPS60175412A publication Critical patent/JPS60175412A/ja
Publication of JPH0572742B2 publication Critical patent/JPH0572742B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP59030805A 1984-02-21 1984-02-21 窒化ガリウムの成長方法 Granted JPS60175412A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59030805A JPS60175412A (ja) 1984-02-21 1984-02-21 窒化ガリウムの成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59030805A JPS60175412A (ja) 1984-02-21 1984-02-21 窒化ガリウムの成長方法

Publications (2)

Publication Number Publication Date
JPS60175412A JPS60175412A (ja) 1985-09-09
JPH0572742B2 true JPH0572742B2 (enrdf_load_stackoverflow) 1993-10-12

Family

ID=12313894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59030805A Granted JPS60175412A (ja) 1984-02-21 1984-02-21 窒化ガリウムの成長方法

Country Status (1)

Country Link
JP (1) JPS60175412A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088217B2 (ja) † 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
JP3349931B2 (ja) * 1997-10-30 2002-11-25 松下電器産業株式会社 半導体レーザ装置の製造方法

Also Published As

Publication number Publication date
JPS60175412A (ja) 1985-09-09

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term