JPS61153261U - - Google Patents
Info
- Publication number
- JPS61153261U JPS61153261U JP1985036372U JP3637285U JPS61153261U JP S61153261 U JPS61153261 U JP S61153261U JP 1985036372 U JP1985036372 U JP 1985036372U JP 3637285 U JP3637285 U JP 3637285U JP S61153261 U JPS61153261 U JP S61153261U
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- semiconductor substrate
- leads
- metal
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Description
第１図は本考案の一実施例である過電流保護装
置の断面図、第２図・第３図は本考案の一実施例
である過電流保護装置の金属膜を示す概略図、第
４図は従来の過電流保護装置を示す斜視図である
。 主な図番の説明、１は過電流保護装置、２はリ
ード、３はアイランド、４は半導体基板、５はシ
リコン酸化膜、６は金属膜、７は金属線である。
置の断面図、第２図・第３図は本考案の一実施例
である過電流保護装置の金属膜を示す概略図、第
４図は従来の過電流保護装置を示す斜視図である
。 主な図番の説明、１は過電流保護装置、２はリ
ード、３はアイランド、４は半導体基板、５はシ
リコン酸化膜、６は金属膜、７は金属線である。
Claims (1)
- 少なくとも一対のリードと、該リードのアイラ
ンド上に平坦化した上面を有する一導電型の半導
体基板と、該半導体基板上に形成された絶縁膜と
、該絶縁膜上に蝕刻により形成された金属膜と、
該金属膜と前記リードとをワイヤボンドにより接
続する金属線とにより構成され、過電流が流れた
際前記金属膜が溶断することを特徴とした過電流
保護装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985036372U JPS61153261U (ja) | 1985-03-14 | 1985-03-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985036372U JPS61153261U (ja) | 1985-03-14 | 1985-03-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61153261U true JPS61153261U (ja) | 1986-09-22 |
Family
ID=30541489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985036372U Pending JPS61153261U (ja) | 1985-03-14 | 1985-03-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61153261U (ja) |
-
1985
- 1985-03-14 JP JP1985036372U patent/JPS61153261U/ja active Pending