JPS61150340A - 化合物半導体装置の製造方法 - Google Patents

化合物半導体装置の製造方法

Info

Publication number
JPS61150340A
JPS61150340A JP59275341A JP27534184A JPS61150340A JP S61150340 A JPS61150340 A JP S61150340A JP 59275341 A JP59275341 A JP 59275341A JP 27534184 A JP27534184 A JP 27534184A JP S61150340 A JPS61150340 A JP S61150340A
Authority
JP
Japan
Prior art keywords
phosphorus
tube
compound semiconductor
yellow
red phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59275341A
Other languages
English (en)
Japanese (ja)
Other versions
JPH039611B2 (OSRAM
Inventor
Shuzo Kagawa
修三 香川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59275341A priority Critical patent/JPS61150340A/ja
Publication of JPS61150340A publication Critical patent/JPS61150340A/ja
Publication of JPH039611B2 publication Critical patent/JPH039611B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Light Receiving Elements (AREA)
JP59275341A 1984-12-25 1984-12-25 化合物半導体装置の製造方法 Granted JPS61150340A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59275341A JPS61150340A (ja) 1984-12-25 1984-12-25 化合物半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59275341A JPS61150340A (ja) 1984-12-25 1984-12-25 化合物半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61150340A true JPS61150340A (ja) 1986-07-09
JPH039611B2 JPH039611B2 (OSRAM) 1991-02-08

Family

ID=17554118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59275341A Granted JPS61150340A (ja) 1984-12-25 1984-12-25 化合物半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61150340A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112236A (ja) * 1988-10-21 1990-04-24 Nippon Mining Co Ltd 化合物半導体装置の製造方法
WO1990015436A1 (fr) * 1989-05-31 1990-12-13 Nippon Mining Co., Ltd Procede de production de dispositifs a semi-conducteur composites
US5049524A (en) * 1989-02-28 1991-09-17 Industrial Technology Research Institute Cd diffusion in InP substrates
US5508207A (en) * 1992-06-29 1996-04-16 Sumitomo Sitix Corporation Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390861A (en) * 1977-01-21 1978-08-10 Sharp Corp Manufacture of semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390861A (en) * 1977-01-21 1978-08-10 Sharp Corp Manufacture of semiconductor element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112236A (ja) * 1988-10-21 1990-04-24 Nippon Mining Co Ltd 化合物半導体装置の製造方法
US5049524A (en) * 1989-02-28 1991-09-17 Industrial Technology Research Institute Cd diffusion in InP substrates
WO1990015436A1 (fr) * 1989-05-31 1990-12-13 Nippon Mining Co., Ltd Procede de production de dispositifs a semi-conducteur composites
EP0426877A4 (en) * 1989-05-31 1993-01-27 Nippon Mining Company Method of producing compound semiconductor devices
US5214003A (en) * 1989-05-31 1993-05-25 Nippon Mining Co., Ltd. Process for producing a uniform oxide layer on a compound semiconductor substrate
US5508207A (en) * 1992-06-29 1996-04-16 Sumitomo Sitix Corporation Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants

Also Published As

Publication number Publication date
JPH039611B2 (OSRAM) 1991-02-08

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