JPS61140157A - 樹脂封止型半導体装置 - Google Patents
樹脂封止型半導体装置Info
- Publication number
- JPS61140157A JPS61140157A JP59262006A JP26200684A JPS61140157A JP S61140157 A JPS61140157 A JP S61140157A JP 59262006 A JP59262006 A JP 59262006A JP 26200684 A JP26200684 A JP 26200684A JP S61140157 A JPS61140157 A JP S61140157A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor element
- groove
- semiconductor device
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83051—Forming additional members, e.g. dam structures
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、耐湿性の向上されたヒートシンクを有する樹
脂封止型半導体装置特に5IPW(シングル・インライ
ン・パッケージ)半導体装置に関する。
脂封止型半導体装置特に5IPW(シングル・インライ
ン・パッケージ)半導体装置に関する。
従来の半導体装置においては、たとえばT O−220
パツケージでは、第2図に示す様に、ヒートシンク3に
連続する素子載置部材4の半導体素子6を搭載した部分
の外周に溝5が一重に設けてあり、この@5に囲まれた
部分に半導体素子6がソルダー8で取り付けられ外部導
出リード1と金線7で接続された後、モールド樹脂2で
封止されていた。
パツケージでは、第2図に示す様に、ヒートシンク3に
連続する素子載置部材4の半導体素子6を搭載した部分
の外周に溝5が一重に設けてあり、この@5に囲まれた
部分に半導体素子6がソルダー8で取り付けられ外部導
出リード1と金線7で接続された後、モールド樹脂2で
封止されていた。
しかし、本来この溝5の役割は、素子6を搭載する時の
ソルダー8の流れ止め及び七−ルド樹脂2とリード1と
の界面からの水分の浸入防止の為であった。
ソルダー8の流れ止め及び七−ルド樹脂2とリード1と
の界面からの水分の浸入防止の為であった。
しかし、現状では溝5は一重だけ設けら扛ており、半導
体素子6を搭載する時のソルダー8の流れにより、この
溝5が埋ってしまう傾向にあり、ソルダー8の流れ止め
の役割は果たすがモールド樹脂2とリード1との界面か
らの水分の浸入に対してはほとんど効果が無く、半導体
素子6に水分が浸入してしまうことがあった。
体素子6を搭載する時のソルダー8の流れにより、この
溝5が埋ってしまう傾向にあり、ソルダー8の流れ止め
の役割は果たすがモールド樹脂2とリード1との界面か
らの水分の浸入に対してはほとんど効果が無く、半導体
素子6に水分が浸入してしまうことがあった。
その結果半導体素子6の表面配線を形成するアルミニウ
ムの腐食の原因となり、アルミニウム配線が断線したり
する問題が発生し、初期不良及び市場での不良発生の原
因になる恐れがあった。
ムの腐食の原因となり、アルミニウム配線が断線したり
する問題が発生し、初期不良及び市場での不良発生の原
因になる恐れがあった。
本発明の目的は、水分侵入による不良発生のない樹脂封
止型半導体装置を提供することにある。
止型半導体装置を提供することにある。
本発明によnば、半導体素子を金属の載置部材に取り付
は樹脂で封止してなる樹脂封止半導体装置において、載
置部材の素子搭載部の外周にすくなくとも二本以上の自
行する溝を設けたことを特徴とする樹脂封止型半導体装
置を得る。
は樹脂で封止してなる樹脂封止半導体装置において、載
置部材の素子搭載部の外周にすくなくとも二本以上の自
行する溝を設けたことを特徴とする樹脂封止型半導体装
置を得る。
次に、本発明を図面を参照して説明する。
第1図は本発明の一実施例の投影図である。金属でなり
、ヒートシンク3に連続する素子載置部材4に搭載しで
ある半導体素子6の外周に溝5及び5′ が並行に、す
なわち、2重に設けである。
、ヒートシンク3に連続する素子載置部材4に搭載しで
ある半導体素子6の外周に溝5及び5′ が並行に、す
なわち、2重に設けである。
半導体素子6がこの溝5,5′で囲まれた部分にソルダ
ー8で取り付けらn、外部導出リード1と半導体素子6
の電極とを金線7で接続した後、モールド樹脂2で封止
している。
ー8で取り付けらn、外部導出リード1と半導体素子6
の電極とを金線7で接続した後、モールド樹脂2で封止
している。
この溝5は半導体素子6を搭載する時のソルダー8の流
n防止の役割を果し、外側に設けら几た溝5′ は外部
からの水分の浸入を極力防止する役割を果す。
n防止の役割を果し、外側に設けら几た溝5′ は外部
からの水分の浸入を極力防止する役割を果す。
以上説明したように、本発明は半導体素子6を搭載する
部分の外周にすくなくとも二本以上の溝5.5′を設け
ることにより、内側の溝5においてソルダー8の流れ止
めの役割を果し、外側の溝5′においてモールド樹脂2
と外部導出リード1との界面からの水分の浸入を極力防
止することが出来る効果がある。
部分の外周にすくなくとも二本以上の溝5.5′を設け
ることにより、内側の溝5においてソルダー8の流れ止
めの役割を果し、外側の溝5′においてモールド樹脂2
と外部導出リード1との界面からの水分の浸入を極力防
止することが出来る効果がある。
その結果、耐湿性の優れた、信頼性の高い半導体装置を
提供できるものである。
提供できるものである。
第1図は本発明の一実施例による投影図であり、第2図
は従来のヒート7ンクを有するSIP型樹脂半導体装置
の投影図である。 1・・・・・・外部導出ソード、2・・・・・・モール
ド樹脂、3・・・・・・ヒートシンク、4・・・・・・
素子搭載部、5・・・・・・素子搭載部外周に設けであ
る溝、6・・・・・・半導体素子、7・・・・・・金線
、8・・・・・・ソルダー。 第 11!lI 実力に枦J 革 2 図 X求刻
は従来のヒート7ンクを有するSIP型樹脂半導体装置
の投影図である。 1・・・・・・外部導出ソード、2・・・・・・モール
ド樹脂、3・・・・・・ヒートシンク、4・・・・・・
素子搭載部、5・・・・・・素子搭載部外周に設けであ
る溝、6・・・・・・半導体素子、7・・・・・・金線
、8・・・・・・ソルダー。 第 11!lI 実力に枦J 革 2 図 X求刻
Claims (1)
- 金属の素子載置部機上に半導体素子を搭載し、樹脂で封
止してなる樹脂封止型半導体装置において、前記素子載
置部材の前記半導体素子搭載部の外周にすくなくとも二
本以上の並行する溝を設けたことを特徴とする樹脂封止
型半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59262006A JPS61140157A (ja) | 1984-12-12 | 1984-12-12 | 樹脂封止型半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59262006A JPS61140157A (ja) | 1984-12-12 | 1984-12-12 | 樹脂封止型半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61140157A true JPS61140157A (ja) | 1986-06-27 |
Family
ID=17369699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59262006A Pending JPS61140157A (ja) | 1984-12-12 | 1984-12-12 | 樹脂封止型半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61140157A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1408548A3 (de) * | 2002-10-11 | 2004-09-29 | Micronas GmbH | Elektronisches Bauelement mit einem Systemträger |
EP2605278A1 (en) * | 2011-12-15 | 2013-06-19 | Nxp B.V. | Lead Frame with Die Attach Bleeding Control Features |
US9620391B2 (en) | 2002-10-11 | 2017-04-11 | Micronas Gmbh | Electronic component with a leadframe |
-
1984
- 1984-12-12 JP JP59262006A patent/JPS61140157A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1408548A3 (de) * | 2002-10-11 | 2004-09-29 | Micronas GmbH | Elektronisches Bauelement mit einem Systemträger |
US9620391B2 (en) | 2002-10-11 | 2017-04-11 | Micronas Gmbh | Electronic component with a leadframe |
EP2605278A1 (en) * | 2011-12-15 | 2013-06-19 | Nxp B.V. | Lead Frame with Die Attach Bleeding Control Features |
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