JPS6113734B2 - - Google Patents
Info
- Publication number
- JPS6113734B2 JPS6113734B2 JP8131977A JP8131977A JPS6113734B2 JP S6113734 B2 JPS6113734 B2 JP S6113734B2 JP 8131977 A JP8131977 A JP 8131977A JP 8131977 A JP8131977 A JP 8131977A JP S6113734 B2 JPS6113734 B2 JP S6113734B2
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- sensitive composition
- composition according
- irradiation
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 13
- 239000002683 reaction inhibitor Substances 0.000 claims description 13
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000004132 cross linking Methods 0.000 claims description 10
- 239000002516 radical scavenger Substances 0.000 claims description 6
- -1 polydimethylsiloxane Polymers 0.000 claims description 5
- 239000005062 Polybutadiene Substances 0.000 claims description 4
- 229920002857 polybutadiene Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 150000001540 azides Chemical class 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 150000001351 alkyl iodides Chemical class 0.000 claims description 2
- 239000003431 cross linking reagent Substances 0.000 claims description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims 2
- WCBPJVKVIMMEQC-UHFFFAOYSA-N 1,1-diphenyl-2-(2,4,6-trinitrophenyl)hydrazine Chemical group [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1NN(C=1C=CC=CC=1)C1=CC=CC=C1 WCBPJVKVIMMEQC-UHFFFAOYSA-N 0.000 claims 1
- 229920003048 styrene butadiene rubber Polymers 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920003051 synthetic elastomer Polymers 0.000 description 2
- FSAONUPVUVBQHL-UHFFFAOYSA-N 1,3-bis(4-azidophenyl)prop-2-en-1-one Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=CC(=O)C1=CC=C(N=[N+]=[N-])C=C1 FSAONUPVUVBQHL-UHFFFAOYSA-N 0.000 description 1
- WDCYWAQPCXBPJA-UHFFFAOYSA-N 1,3-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC([N+]([O-])=O)=C1 WDCYWAQPCXBPJA-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- ARKQRZXCXIMZHG-UHFFFAOYSA-N 1-azido-4-[(4-azidophenyl)methyl]benzene Chemical compound C1=CC(N=[N+]=[N-])=CC=C1CC1=CC=C(N=[N+]=[N-])C=C1 ARKQRZXCXIMZHG-UHFFFAOYSA-N 0.000 description 1
- RZTDESRVPFKCBH-UHFFFAOYSA-N 1-methyl-4-(4-methylphenyl)benzene Chemical group C1=CC(C)=CC=C1C1=CC=C(C)C=C1 RZTDESRVPFKCBH-UHFFFAOYSA-N 0.000 description 1
- YXAOOTNFFAQIPZ-UHFFFAOYSA-N 1-nitrosonaphthalen-2-ol Chemical compound C1=CC=CC2=C(N=O)C(O)=CC=C21 YXAOOTNFFAQIPZ-UHFFFAOYSA-N 0.000 description 1
- UFBJCMHMOXMLKC-UHFFFAOYSA-N 2,4-dinitrophenol Chemical compound OC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O UFBJCMHMOXMLKC-UHFFFAOYSA-N 0.000 description 1
- RMBFBMJGBANMMK-UHFFFAOYSA-N 2,4-dinitrotoluene Chemical compound CC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O RMBFBMJGBANMMK-UHFFFAOYSA-N 0.000 description 1
- LAVPWYRENKSWJM-UHFFFAOYSA-N 4-butylbenzene-1,2-diol Chemical compound CCCCC1=CC=C(O)C(O)=C1 LAVPWYRENKSWJM-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 1
- 230000002292 Radical scavenging effect Effects 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- HHEAADYXPMHMCT-UHFFFAOYSA-N dpph Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1[N]N(C=1C=CC=CC=1)C1=CC=CC=C1 HHEAADYXPMHMCT-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 150000002828 nitro derivatives Chemical class 0.000 description 1
- 150000002832 nitroso derivatives Chemical class 0.000 description 1
- NLRKCXQQSUWLCH-UHFFFAOYSA-N nitrosobenzene Chemical compound O=NC1=CC=CC=C1 NLRKCXQQSUWLCH-UHFFFAOYSA-N 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8131977A JPS5417015A (en) | 1977-07-06 | 1977-07-06 | Radiation sensitive composite |
US06/059,845 US4279986A (en) | 1977-06-01 | 1979-07-23 | Negative resist and radical scavenger composition with capability of preventing post-irradiation polymerization |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8131977A JPS5417015A (en) | 1977-07-06 | 1977-07-06 | Radiation sensitive composite |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5417015A JPS5417015A (en) | 1979-02-08 |
JPS6113734B2 true JPS6113734B2 (enrdf_load_stackoverflow) | 1986-04-15 |
Family
ID=13743069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8131977A Granted JPS5417015A (en) | 1977-06-01 | 1977-07-06 | Radiation sensitive composite |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5417015A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5677843A (en) * | 1979-11-30 | 1981-06-26 | Fujitsu Ltd | Resist pattern forming method |
JPS5869217A (ja) * | 1981-10-22 | 1983-04-25 | Japan Synthetic Rubber Co Ltd | 感光性シリコ−ン樹脂組成物 |
DE3153069T1 (de) * | 1981-12-21 | 1983-12-15 | Institut chimii Akademii Nauk SSSR, Gor'kij | Foto- und elektronenresist |
JPH0656491B2 (ja) * | 1983-07-20 | 1994-07-27 | 日立化成工業株式会社 | 感光性シリコ−ン樹脂組成物 |
JP2651725B2 (ja) * | 1988-11-18 | 1997-09-10 | キヤノン株式会社 | 感光性樹脂組成物、感光体及びそれを使用する体積位相型ホログラムの製造方法 |
-
1977
- 1977-07-06 JP JP8131977A patent/JPS5417015A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5417015A (en) | 1979-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1194764A (en) | Stripping compositions and methods of stripping resists | |
US5667938A (en) | Acid scavengers for use in chemically amplified photoresists | |
CA1192119A (en) | Stripping compositions and methods of stripping resists | |
EP0060585B2 (en) | Method of applying a resist pattern on a substrate, and resist material mixture | |
KR102694457B1 (ko) | 레지스트 조성물 및 레지스트막 | |
JPH0943848A (ja) | レジスト材料及びレジストパターンの形成方法 | |
JP2566326B2 (ja) | フレクソグラフ用印刷レリーフの作成方法 | |
WO1999035538A1 (en) | Developer solvent for photopolymer printing plates and method | |
KR100711542B1 (ko) | 레지스트 패턴, 포지티브 레지스트 조성물 및 적층물을형성시키는 방법 | |
JPS6113734B2 (enrdf_load_stackoverflow) | ||
JP2736296B2 (ja) | リソグラフ印刷要素のための単相現像液 | |
JPS6113733B2 (enrdf_load_stackoverflow) | ||
US4348472A (en) | Method of applying a layer in accordance with a pattern on a substrate, a negative resist material and a substrate coated with the resist | |
JPH02179646A (ja) | 光重合によって架橋できる層用現像溶剤およびレリーフフォームの製法 | |
JP3008468B2 (ja) | 感光性組成物、及び該感光性組成物を用いたパターン形成方法及び半導体の製造方法 | |
US4279986A (en) | Negative resist and radical scavenger composition with capability of preventing post-irradiation polymerization | |
JPH02257141A (ja) | 光重合によって架橋できる層用現像溶剤およびレリーフフォームの製法 | |
JPS6026945A (ja) | ストリツピング組成物及びレジストをストリツピングする方法 | |
JPS6142250B2 (enrdf_load_stackoverflow) | ||
JPH0727219B2 (ja) | ネガ型感光性組成物用現像液 | |
JPH0544665B2 (enrdf_load_stackoverflow) | ||
JPS6314342B2 (enrdf_load_stackoverflow) | ||
JPS6113575B2 (enrdf_load_stackoverflow) | ||
JPS58502169A (ja) | フォト−及び電子線レジスト | |
JP2867509B2 (ja) | レジストパターンの形成方法 |