JPS61137318A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS61137318A JPS61137318A JP59259751A JP25975184A JPS61137318A JP S61137318 A JPS61137318 A JP S61137318A JP 59259751 A JP59259751 A JP 59259751A JP 25975184 A JP25975184 A JP 25975184A JP S61137318 A JPS61137318 A JP S61137318A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- mask
- semiconductor device
- glass film
- electrode metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000011521 glass Substances 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000011247 coating layer Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 abstract description 10
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59259751A JPS61137318A (ja) | 1984-12-08 | 1984-12-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59259751A JPS61137318A (ja) | 1984-12-08 | 1984-12-08 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61137318A true JPS61137318A (ja) | 1986-06-25 |
| JPH0550851B2 JPH0550851B2 (cg-RX-API-DMAC7.html) | 1993-07-30 |
Family
ID=17338443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59259751A Granted JPS61137318A (ja) | 1984-12-08 | 1984-12-08 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61137318A (cg-RX-API-DMAC7.html) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54121732A (en) * | 1978-03-15 | 1979-09-21 | Nippon Telegr & Teleph Corp <Ntt> | Pattern transfer method |
-
1984
- 1984-12-08 JP JP59259751A patent/JPS61137318A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54121732A (en) * | 1978-03-15 | 1979-09-21 | Nippon Telegr & Teleph Corp <Ntt> | Pattern transfer method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0550851B2 (cg-RX-API-DMAC7.html) | 1993-07-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |