JPS54121732A - Pattern transfer method - Google Patents

Pattern transfer method

Info

Publication number
JPS54121732A
JPS54121732A JP2875278A JP2875278A JPS54121732A JP S54121732 A JPS54121732 A JP S54121732A JP 2875278 A JP2875278 A JP 2875278A JP 2875278 A JP2875278 A JP 2875278A JP S54121732 A JPS54121732 A JP S54121732A
Authority
JP
Japan
Prior art keywords
patterns
transferred
exposure
substrate
ultraviolet rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2875278A
Other languages
Japanese (ja)
Inventor
Jiro Tenmiyo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2875278A priority Critical patent/JPS54121732A/en
Publication of JPS54121732A publication Critical patent/JPS54121732A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To transfer the patterns in submicron regions with good accuracy by so selecting pattern pitch length, exposure wavelength, gap length, etc. as to satisfy specified conditions at the forming of fine wires, etc. by a proximity method.
CONSTITUTION: First, second electrodes forming patterns are provided to a photo mask 21 and the patterns corresponding to the electrode patterns are transferred by a proximity method on a substrate 23 which has been coated with photo resist 22 by radiation of ultraviolet rays. When the pitch λp of the desired pattern, the gap length (h) between the mask 21 and substrate 23 and the wavelength λ0 of exposure ultraviolet rays are selected as to satisfy the conditions of formula [I], the diffraction and interference effect of light at the exposure are positively utilized, whereby the gap parts and line parts of the patterns are inverted and transferred, and the desired pattern in the submicron regions may be transferred with good accuracy.
COPYRIGHT: (C)1979,JPO&Japio
JP2875278A 1978-03-15 1978-03-15 Pattern transfer method Pending JPS54121732A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2875278A JPS54121732A (en) 1978-03-15 1978-03-15 Pattern transfer method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2875278A JPS54121732A (en) 1978-03-15 1978-03-15 Pattern transfer method

Publications (1)

Publication Number Publication Date
JPS54121732A true JPS54121732A (en) 1979-09-21

Family

ID=12257131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2875278A Pending JPS54121732A (en) 1978-03-15 1978-03-15 Pattern transfer method

Country Status (1)

Country Link
JP (1) JPS54121732A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61137318A (en) * 1984-12-08 1986-06-25 Internatl Rectifier Corp Japan Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61137318A (en) * 1984-12-08 1986-06-25 Internatl Rectifier Corp Japan Ltd Manufacture of semiconductor device
JPH0550851B2 (en) * 1984-12-08 1993-07-30 Nippon Inter Electronics Corp

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