JPS61129811A - Manufacturing apparatus for semiconductor - Google Patents

Abstract

PURPOSE:To make it possible to form a film with uniform thickness by providing a light source transfer mechanism to transfer the light source. CONSTITUTION:When a reaction gas 4 is introduced into the reaction chamber 1, the gas is excited and decomposed by being lighted with the light from the light source 12, and the reaction products by this reaction deposit on the base board 5 to form a thin film on the base board 5. At this time, the light source 12 is transferred to the direction of the axis of the lamp through a light source transfer mechanism 18 so that the amount of the light energy fed on the base board 5 from the light source 12 will be uniform in this direction, being the integral value of the light energy distribution from the light source in this transfer direction. As a result, the amount of the light energy provided on the base board 5 is uniform in the transferring direction of the light source 12, thereby providing a uniform thickness of the thin film in this direction.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and in particular to optically pumped CV
D (photo chemical vapor
The present invention relates to an apparatus for forming thin films by the deposition method.

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit devices, but in the conventional CVD method, the reaction gas is mainly heated to cause a chemical reaction, which results in a high reaction temperature. I formed by
IIIll! is easily damaged.

Therefore, recently, a photo-excited CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD. According to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods, plasma CVD methods, etc., and there is no damage to thin films. little (can be)

In general, in the photo-excited CVD method, it is known that the intensity of light has a large effect on the thin film formation rate, and under conditions where the substrate temperature, reaction gas composition ratio, and pressure are kept constant, * The formation speed of i* is proportional to the light irradiation intensity (
It is known that

Figure 2 shows the basic configuration of a conventional thin film forming apparatus using such a photo-excited CVD method. In the figure, 1 is a reaction chamber whose inside is reduced to a high vacuum state during film formation, and 2 is a linear lamp. 3 is a heater for heating the substrate; 4 is a reactive gas such as silane; 5 is a substrate on which a thin film is formed; 6 is a light incident window made of a light-transmitting material; 7 is a reactive gas supply port; 8 is a post-reaction a gas exhaust port 9 for discharging the gas 10 of the substrate 5;
It is a fixed stand on which to place.

In this apparatus, when a reaction gas 4 is introduced into the reaction chamber 1 from the supply lower, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction products are deposited on the substrate 5 heated at a low temperature by the heater 3, and a thin film is formed on the substrate 5. Gas 1 after the reaction
0 is discharged from the discharge port 8.

[Problem that the invention seeks to solve]

By the way, in this conventional device, a single linear lamp is used as the light source 2, but due to the structure of this linear lamp, the amount of light at both ends of the lamp is small, and the light from this linear lamp does not reach the substrate 5. The illumination intensity is weaker in the direction perpendicular to the lamp axis as it is farther away from the other lamps.Therefore, in this conventional device, the film formation rate at the periphery of the substrate 5 is slower than that at the center, resulting in a thinner film. However, there was a problem in that the thickness of the thin film formed was non-uniform.

The present invention has been made in view of the above conventional problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus capable of forming a film with a uniform thickness by eliminating differences in the distribution of light energy applied from a light source to a substrate. There is.

[Means for solving problems]

According to the present invention, a light source moving mechanism for moving a light source is provided in a semiconductor manufacturing apparatus.

[Effect]

In the semiconductor manufacturing apparatus according to the present invention, the light source moves, so that the distribution of light energy applied to the substrate becomes uniform in the moving direction, and therefore the thickness of the thin film formed on the substrate becomes uniform.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows an embodiment of the present invention, in which the same reference numerals as in FIG. 2 indicate the same or corresponding parts, and 12 is a light source consisting of a linear lamp 12a. A guide plate 12b is attached to regulate the direction of light.

The linear lamp 12a is attached to a support plate 13 facing in the flow direction of the reaction gas 4, and a ball screw bearing 14 is fixed to a connecting portion 13a formed integrally with the support plate 13. A ball screw 15 is screwed into this bearing 14, both ends of the ball screw 15 are supported by a bracket 16 fixed to the reaction chamber 1, and a drive motor 17 is connected to one end of the ball screw 15.
This ball screw 15° drive motor 17 and the like constitute a light source moving machine #R1B that moves the linear lamp L2a in its axial direction.

Next, the effects will be explained.

In the apparatus of this embodiment, as in the conventional apparatus, when the reactant gas 4 is introduced into the reaction chamber 1, the introduced reactant gas 4 is irradiated with light from the light source 12 and is excited and decomposed. The resulting reaction products are deposited on the substrate 4 to form a thin film on the substrate 4.

At this time, in the conventional device, since the amount of light at both ends of the linear lamp is small, the illuminance at both ends of the linear lamp on the substrate in the axial direction becomes weak.However, in this embodiment, The light source 12 is moved in the direction of the lamp axis by the light source moving mechanism 1B, and therefore the amount of light energy given to the substrate 4 from the light source 12 is the integral value of the light energy distribution from the light source in the moving direction, and is uniform in the direction. As a result, a thin film having a uniform thickness in the moving direction is formed on the substrate 4.

In this manner, in this embodiment, the amount of light energy given to the substrate 4 is uniform in the moving direction of the light source 12, and the thickness of *** in this direction can be made uniform.

In the above embodiment, the light source 12 is the linear lamp 12.
Although the case has been described in which the movement is made in the axial direction of a, the direction of movement is not limited to the above-mentioned axial direction. For example, the movement may be made in the direction perpendicular to the axis or in both of these directions. What is necessary is to move the light energy so that the amount of light energy given to it becomes uniform.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention, since the light source is moved, the amount of light energy given to the substrate can be made uniform, the uniformity of film thickness can be improved, and high precision semiconductor manufacturing can be achieved. There are benefits to be gained.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional side view of a conventional semiconductor manufacturing apparatus. DESCRIPTION OF SYMBOLS 1...Reaction chamber, 4...Reaction gas, 5...Substrate, 1
2...Light source, 18...Light source moving mechanism.

Claims (1)

[Claims] (1) In a semiconductor manufacturing device that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, the light source is then applied to the substrate. 1. A semiconductor manufacturing apparatus comprising a light source moving mechanism that moves a light source in a predetermined direction so that the distribution of light energy becomes uniform in the predetermined direction.