JPS61131419A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPS61131419A JPS61131419A JP25344684A JP25344684A JPS61131419A JP S61131419 A JPS61131419 A JP S61131419A JP 25344684 A JP25344684 A JP 25344684A JP 25344684 A JP25344684 A JP 25344684A JP S61131419 A JPS61131419 A JP S61131419A
- Authority
- JP
- Japan
- Prior art keywords
- light source
- substrate
- reaction chamber
- light
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光化学的に反応ガスを分解して薄膜を基板
上に形成させる方法（ｐｈｏｔｏ ｃｈｅｓｉｃａｌｖ
ａｐｏｕｒ ｄｅｐｏｓｉｔｉｏｎ ：以下光励起Ｃ
ＶＤ法と称す）を用いて薄膜を形成する半導体製造装置
に関するものである。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method of photochemically decomposing a reactive gas to form a thin film on a substrate.
Apour deposition: Hereinafter referred to as photoexcitation C
The present invention relates to a semiconductor manufacturing apparatus that forms a thin film using a VD method (referred to as a VD method).
ＣＶＤ法は集積回路装置における薄膜形成等において重
要な技術であるが、従来のＣＶＤ法は、主として反応ガ
スを加熱して化学反応を起こさせるようにしており、こ
のため反応温度が高温となり、これにより形成される：
薄膜はダメージを受は易いものである。 ・
そこで最近、低温ＣＶＤ技術として光励起ＣＶＤ法が注
目されている。・この光励起ＣＶＤ法は、ＣＶＤのエネ
ルギー源として光を用いるものであり、これによれば、
従来の熱励起ＣＶＤ法、プラズマＣＶＤ法等に比較し・
て反応温度を低温にでき、薄膜へのダメージも少なくす
ることができる。The CVD method is an important technology for forming thin films in integrated circuit devices, but in the conventional CVD method, the reaction gas is mainly heated to cause a chemical reaction, which results in a high reaction temperature. Formed by:
Thin films are easily damaged.・Recently, the photo-excited CVD method has been attracting attention as a low-temperature CVD technology.・This photo-excited CVD method uses light as an energy source for CVD, and according to this,
Compared to conventional thermally excited CVD method, plasma CVD method, etc.
This allows the reaction temperature to be lowered and damage to the thin film to be reduced.
また、一般的に光励起ＣＶＤ法では、光の強度がＷＩＩ
ＩＩＩの形成速度に大ぎな影響を与えることが知られて
おり、基板温度１反応ガスの組成比、圧力を一定に保っ
た条件下では、薄膜の形成速度は光の照射強度に比例し
て速くなることが知られている。
・
第３図はこのような光励起ＣＶＤ法による従来の薄膜形
成装置の基本的な構成を示し、図において、１は膜形成
時にそ′あ中が高真空状態に減圧される反応室、２は線
状ランプからなる光源、３は基板加熱用ヒータ、４はシ
ラン等の反応ガス、５は薄膜が形成される基板、６は光
透過材からなる光入射窓、７は反応ガス供給口、８は反
応後のガス４ａを排出するためのガス排出口、９−は基
板５を載せる固定台である。In general, in the photoexcitation CVD method, the light intensity is WII
It is known that the formation rate of III is greatly affected, and under conditions where the substrate temperature, reaction gas composition ratio, and pressure are kept constant, the thin film formation rate increases in proportion to the light irradiation intensity. It is known that
・Figure 3 shows the basic configuration of a conventional thin film forming apparatus using such a photo-excited CVD method. In the figure, 1 is a reaction chamber whose inside is reduced to a high vacuum state during film formation, and 2 is a A light source consisting of a linear lamp, 3 a heater for heating the substrate, 4 a reactive gas such as silane, 5 a substrate on which a thin film is formed, 6 a light entrance window made of a light transmitting material, 7 a reactive gas supply port, 8 9 is a gas outlet for discharging the gas 4a after the reaction, and 9- is a fixing table on which the substrate 5 is placed.
なお、反応室１内は一般的に高真空状態に減圧され、反
応室１の壁、光透過材からなる光入射窓６も当然この圧
力に耐えうる構造、板厚により構成されている。Incidentally, the pressure inside the reaction chamber 1 is generally reduced to a high vacuum state, and the walls of the reaction chamber 1 and the light entrance window 6 made of a light-transmitting material are of course constructed with a structure and plate thickness capable of withstanding this pressure.
この装置では、反応ガス４が供給ロアから反応室１に導
入されると、該反応ガス４は入射窓６から投射された光
線により励起分解される。そしてこれにより生じた反応
生成物がヒータ３によって低温加熱された基板５上に堆
積し、該基板５上に薄膜が形成される。反応後のガス４
ａは排出口８から排出される。In this apparatus, when a reaction gas 4 is introduced into the reaction chamber 1 from the supply lower, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction product is deposited on the substrate 5 heated at a low temperature by the heater 3, and a thin film is formed on the substrate 5. Gas after reaction 4
a is discharged from the discharge port 8.
〔発明が解決しようとする問題点〕
この従来の半導体製造装置では以上のように反応室１に
光の入射窓６を設け、反応室１外に設けられた光源２か
ら光を投射しているが、基板５上への薄膜の形成速度を
速めるためには基板５上の光の照度を強くする必要があ
り、そのためにはより出力の大きな光源を用いるか９基
板５と光源２の距離を縮め、基板５上の照度−を強くす
る必要がある。ところが、長寿命で出力の大きい実用的
な光源を求めることは現在では困難であり、また従来の
構造のまま基板５と光源２の間の距離を縮めることもこ
れらの間に光透過材からなる光入射窓６を、高真空の圧
力に耐えられる構造で反応室１に取り付けねばならない
ことからはなはだ困難であった拳
この発明は、このような問題点を解消するためになされ
たもので、基板上の光の照度を高めることのできる半導
体製造装置を得ることを目的とするものである。[Problems to be Solved by the Invention] In this conventional semiconductor manufacturing apparatus, the light entrance window 6 is provided in the reaction chamber 1 as described above, and light is projected from the light source 2 provided outside the reaction chamber 1. However, in order to speed up the formation of a thin film on the substrate 5, it is necessary to increase the illuminance of the light on the substrate 5. To do this, it is necessary to use a light source with a higher output or to increase the distance between the substrate 5 and the light source 2. It is necessary to reduce the size and increase the illuminance on the substrate 5. However, it is currently difficult to find a practical light source with a long life and high output, and it is also possible to shorten the distance between the substrate 5 and the light source 2 with the conventional structure by using a light-transmitting material between them. This invention was made to solve these problems, as the light entrance window 6 had to be attached to the reaction chamber 1 with a structure that could withstand high vacuum pressure. The object of the present invention is to obtain a semiconductor manufacturing apparatus that can increase the illuminance of the light above.
この発明に係る半導体製造装置は、石英ガラス管内に１
本の線状ランプを配設してなる光源体を反応室内に複数
配設してなるものを光源として用いたものである。The semiconductor manufacturing apparatus according to the present invention has one
The light source is a light source in which a plurality of light source bodies each made up of linear lamps are arranged in a reaction chamber.
この発明においては、光源を反応室内に設けたから、該
光源が基板に近づいて該基板上の光の照度が高まり、薄
膜は速く形成される。In this invention, since the light source is provided in the reaction chamber, the light source approaches the substrate, increasing the illuminance of the light on the substrate, and forming a thin film quickly.
以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例による半導体製造装置の断面
側面図、第２図は第１図の断面正面図である。両図にお
いて、１は反応室、２は線状ランプ、工０は円筒形石英
ガラス管、１２ａ〜１２ｅは該石英ガラス管１０内に上
記線状ランプ２を配設してなる光源体、１２は上記光源
体１２ａ〜１２ｅを反応室１内にその中央から外側に向
かうにつれ順次像（なるよう並列配置して構成した光源
である。ＩＩは上記石英ガラス管１０の一端から供給さ
れ他端より排出されるナラ素等の冷却用のガスであり、
これは線状ランプ２を一定温度に保つためのものである
。３は基板加熱用ヒータ、４は反応ガス、５は基板、７
は反応ガス供給口、８は反応後のガス４ａを排出するた
めのガス排出口、９は基板を載せる台である。FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional front view of FIG. 1. In both figures, 1 is a reaction chamber, 2 is a linear lamp, 0 is a cylindrical quartz glass tube, and 12a to 12e are light source bodies each having the linear lamp 2 disposed within the quartz glass tube 10. 1 is a light source constructed by arranging the light source bodies 12a to 12e sequentially in parallel in order to form images from the center to the outside in the reaction chamber 1. II is supplied from one end of the quartz glass tube 10 and is supplied from the other end. It is a cooling gas such as Nara element that is discharged.
This is to keep the linear lamp 2 at a constant temperature. 3 is a heater for heating the substrate, 4 is a reaction gas, 5 is a substrate, 7
8 is a reaction gas supply port, 8 is a gas discharge port for discharging the gas 4a after the reaction, and 9 is a table on which a substrate is placed.
この装置では、基板５上への薄膜形成の動作は従来と同
様であり、光源１２としては円筒形石英ガラス管１０内
に線状ランプ２を配設してなる光源体１２ａ〜１２ｅを
反応室ｌ内に５本配設しており、このように上記光源１
２を反応室１に設けたので、任意の距離まで基板５に近
づけることができ、該基板５上の光の照度を高めること
ができる。このため光源１２の出力を必要以上に高める
ことなく基板５上へのＷｌ膜の形成速度を速めることが
できる。In this apparatus, the operation of forming a thin film on the substrate 5 is the same as the conventional one, and the light source 12 is a light source body 12a to 12e, which is a linear lamp 2 arranged in a cylindrical quartz glass tube 10, in a reaction chamber. Five light sources are arranged in the light source 1, and in this way, the light source 1
2 is provided in the reaction chamber 1, it can be brought close to the substrate 5 to an arbitrary distance, and the illuminance of light on the substrate 5 can be increased. Therefore, the formation speed of the Wl film on the substrate 5 can be increased without increasing the output of the light source 12 more than necessary.
また、複数の光源体１２ａ〜１２ｅを並列配置している
ので、該光源体１２３〜１２ｅの軸と直角な方向におい
て基板５上の光の照度分布をある程度均一にできる。し
かも複数の光源体１２ａ〜１２ｅをその中央から外側に
向って低くなるよう並列配置したので、光の照度分布を
上記直角方向により均一にできる。Moreover, since the plurality of light source bodies 12a to 12e are arranged in parallel, the illuminance distribution of the light on the substrate 5 can be made uniform to some extent in the direction perpendicular to the axis of the light source bodies 123 to 12e. Moreover, since the plurality of light source bodies 12a to 12e are arranged in parallel so that the height decreases from the center toward the outside, the illuminance distribution of the light can be made more uniform in the above-mentioned orthogonal direction.
また、光源１２を複数の石英ガラス管１０から構成した
ので、反応生成物が上記石英ガラス管１０表面に付着し
て、いわゆる曇りを生じた場合にも、この光源体１２ａ
〜１２ｅは容易にその取り替え、清浄ができる。また、
上記石英ガラス管１０内に線状ランプ２の冷却用ガス１
１を、流すようにしたので、該ランプ２をこのガスによ
り一定の温度に保ってその照度を均一にすることができ
る。Furthermore, since the light source 12 is constituted by a plurality of quartz glass tubes 10, even if reaction products adhere to the surface of the quartz glass tube 10 and cause so-called clouding, this light source body 12a
~12e can be easily replaced and cleaned. Also,
A cooling gas 1 for the linear lamp 2 is provided in the quartz glass tube 10.
1 is made to flow, the lamp 2 can be kept at a constant temperature by this gas, and its illuminance can be made uniform.
また、上記石英ガラス管１０は小径のＷｉ単な構成のも
のでよく、製作が容易である。In addition, the quartz glass tube 10 may have a small diameter and a simple structure, and is easy to manufacture.
以上のように、この発明に係る半導体製造装置によれば
、光源を、石英ガラス管内に１本の線状ランプを配設し
てなる光源体を反応室内に複数配設して構成したので、
該光源を基板に近づけて基板上の光の照度を高め、基板
上での薄膜の形成速度を速めることができる効果がある
。As described above, according to the semiconductor manufacturing apparatus according to the present invention, the light source is configured by arranging a plurality of light source bodies each having one linear lamp in a quartz glass tube in the reaction chamber.
This has the effect of increasing the illuminance of the light on the substrate by bringing the light source closer to the substrate, thereby increasing the speed of forming a thin film on the substrate.
１ 第１図は本発明の一実施例による半導体製
造装ゞ 置の断面側面図、第２図は第１図の断
面正面図、第３図は従来の半導体製造装置の断面側面図
である。
１・・・反応室、１２・・・光源、１０・・・円筒形石
英ガラス管、２・・・線状ランプ、１２ａ〜１２ｅ・・
・光源体、４・・・反応ガス、５・・・基板。
なお図中同一符号は同−又番り相当部分を示す。1. FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional front view of FIG. 1, and FIG. 3 is a cross-sectional side view of a conventional semiconductor manufacturing apparatus. DESCRIPTION OF SYMBOLS 1... Reaction chamber, 12... Light source, 10... Cylindrical quartz glass tube, 2... Linear lamp, 12a-12e...
- Light source, 4... Reactive gas, 5... Substrate. Note that the same reference numerals in the drawings indicate parts corresponding to the same numbers.
Claims (1)
化学反応を生じさせ該反応ガス中に置かれた基板上に薄
膜を形成させる半導体製造装置において、上記光源が石
英ガラス管内に１本の線状ランプを配設してなる光源体
を上記反応室内に複数配設してなるものであることを特
徴とする半導体製造装置。(1) In a semiconductor manufacturing device that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, the light source is placed inside a quartz glass tube. A semiconductor manufacturing apparatus characterized in that a plurality of light source bodies each including a linear lamp are arranged in the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25344684A JPS61131419A (en) | 1984-11-29 | 1984-11-29 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25344684A JPS61131419A (en) | 1984-11-29 | 1984-11-29 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61131419A true JPS61131419A (en) | 1986-06-19 |
Family
ID=17251509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25344684A Pending JPS61131419A (en) | 1984-11-29 | 1984-11-29 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61131419A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63150814U (en) * | 1987-03-25 | 1988-10-04 | ||
| US5522935A (en) * | 1992-02-28 | 1996-06-04 | Nec Corporation | Plasma CVD apparatus for manufacturing a semiconductor device |
| WO2007063838A1 (en) * | 2005-11-30 | 2007-06-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| JP2011190511A (en) * | 2010-03-16 | 2011-09-29 | Ushio Inc | Heating apparatus |
-
1984
- 1984-11-29 JP JP25344684A patent/JPS61131419A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63150814U (en) * | 1987-03-25 | 1988-10-04 | ||
| US5522935A (en) * | 1992-02-28 | 1996-06-04 | Nec Corporation | Plasma CVD apparatus for manufacturing a semiconductor device |
| WO2007063838A1 (en) * | 2005-11-30 | 2007-06-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| JP4896039B2 (en) * | 2005-11-30 | 2012-03-14 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
| US8172950B2 (en) | 2005-11-30 | 2012-05-08 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device producing method |
| JP2011190511A (en) * | 2010-03-16 | 2011-09-29 | Ushio Inc | Heating apparatus |
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