JPS61108126A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JPS61108126A
JPS61108126A JP23074784A JP23074784A JPS61108126A JP S61108126 A JPS61108126 A JP S61108126A JP 23074784 A JP23074784 A JP 23074784A JP 23074784 A JP23074784 A JP 23074784A JP S61108126 A JPS61108126 A JP S61108126A
Authority
JP
Japan
Prior art keywords
semiconductor manufacturing
substrate
reaction
reaction chamber
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23074784A
Other languages
Japanese (ja)
Inventor
Toshiyuki Kobayashi
利行 小林
Yoshimi Otomo
大友　芳視
Yoshimi Kinoshita
儀美 木之下
Masao Oda
昌雄 織田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23074784A priority Critical patent/JPS61108126A/en
Publication of JPS61108126A publication Critical patent/JPS61108126A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To accelerate the forming speed of thin films by means of arranging a light source for photochemical reaction in a reaction chamber. CONSTITUTION:An ultraviolet ray lamp 22 as a light source is arranged in a reaction chamber 1 sealing the tube end of lamp 22 with the wall of chamber 1. In such a constitution, the lamp 22 may get close to a substrate 5 resultantly augmenting the intensity of irradiating substrate 5 to accelerated the forming speed of thin films.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、光化学的に反応ガスを分解して、薄膜を基
板上に形成させる方法（ｐｈｏ　ｔｏ　’　ｃｈｅＩＩ
ＩＩｃａ　］ｖａｐｏｕｒ　ｄｅｐｏｓｉｔｉＯｎ　　
：以下光励起ＣＶＤ法と称す）を用いて薄膜を形成する
半導体製造装置に関するもので鼠る。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a method of photochemically decomposing a reactive gas to form a thin film on a substrate (photo to 'cheII).
IIca ]vapour depositOn
This article relates to semiconductor manufacturing equipment that forms thin films using the photo-excited CVD method (hereinafter referred to as optically excited CVD).

〔従来の技術〕　　　　　　　　　　　　　　　゛第３
図は従来の晃漏起ＣｖＤ法を用いた半導体製造−置の基
本的なｉ成を示す。第３図中、１は反応室、２は光源、
ｉは基板加熱用低温炉、４は反応ガス、５は基板、６は
入射窓石英板、７は反応ガス供給口、８はＦｉ応後のガ
スを排出するガス排出口、９は基板積載用台である。[Conventional technology] ゛3rd
The figure shows the basic configuration of a semiconductor manufacturing equipment using the conventional solar-induced CvD method. In Figure 3, 1 is a reaction chamber, 2 is a light source,
i is a low-temperature furnace for heating the substrate, 4 is a reaction gas, 5 is a substrate, 6 is an entrance window quartz plate, 7 is a reaction gas supply port, 8 is a gas discharge port for discharging gas after Fi reaction, 9 is for loading a substrate It is a stand.

この従来の光応用半導体製造装置では、反応ガス４は供
給Ｕ：１７から反応室１に導入され、入射窓６カζ゛ら
投射された光線により反応室１内で光化学反応を生じ、
ヒータ３によっそ低温加熱され“た基板５上に薄膜を形
成する。反応後のガスは排出口８から排気される。In this conventional optical semiconductor manufacturing apparatus, a reaction gas 4 is introduced into the reaction chamber 1 from the supply U: 17, and a photochemical reaction occurs in the reaction chamber 1 by the light beam projected from the entrance window 6.
A thin film is formed on the substrate 5 which has been heated to a low temperature by the heater 3. The gas after the reaction is exhausted from the exhaust port 8.

一般に光励起ＣＶＤ法では光の一度が薄膜の形成速度に
大きな影響を与えることが知られてお“す、基板温遊１
反応ガスの組成比、圧力を一定に保゛った条件下では、
薄膜の形成速度は照射紫外線の照射強度に比例して速く
なる。It is generally known that in the photo-excited CVD method, a single beam of light has a large effect on the thin film formation speed.
Under conditions where the composition ratio and pressure of the reaction gas are kept constant,
The rate of thin film formation increases in proportion to the irradiation intensity of the ultraviolet rays.

〔発明が解決しようとする問題点〕　　　　゛しかるに
、従来の装置では、光源２の紫外線ランプは反応室１外
に取り付けられており、このため照射基板５面との距離
が長くなり、薄膜の形成速度を速めるのに十分な照射強
度を得ることができないという問題点があった。[Problems to be Solved by the Invention] [However, in the conventional apparatus, the ultraviolet lamp of the light source 2 is installed outside the reaction chamber 1, which increases the distance from the irradiation substrate 5, making it difficult to form a thin film. There was a problem in that it was not possible to obtain sufficient irradiation intensity to increase the speed.

この発明は、このような従来の問題点を除去するために
なされたもので、基板上に薄膜を速く形成できる半導体
製造装置を得ることを目的とするものである。The present invention was made to eliminate these conventional problems, and aims to provide a semiconductor manufacturing apparatus that can quickly form a thin film on a substrate.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る半導体製造装置は、光源を反応室内に位
置させたものである。A semiconductor manufacturing apparatus according to the present invention has a light source located within a reaction chamber.

〔作用〕[Effect]

この発明においては、光源が反応室内に位置するため、
基板との距離が接近し該基板面の照射強度が強くなり、
基板上に薄膜が速く形成される。In this invention, since the light source is located inside the reaction chamber,
As the distance to the substrate gets closer, the irradiation intensity on the substrate surface increases,
Thin films are rapidly formed on the substrate.

〔実施例〕〔Example〕

第１図はこの発明の一実施例による半導体製造装置を示
す断面図である。図において、■は反応室、２２は該反
応室１内に設けられた光源である紫外線ランプであり、
該ランプ２２管端部と反応室１壁とはシールされている
。３は基板加熱用低温炉、４は反応ガス、５は基板、７
は反応ガス供給口、８は反応ガス排出口、９は基板積載
用台である。FIG. 1 is a sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention. In the figure, ■ is a reaction chamber, 22 is an ultraviolet lamp that is a light source provided in the reaction chamber 1,
The tube end of the lamp 22 and the wall of the reaction chamber 1 are sealed. 3 is a low temperature furnace for heating the substrate, 4 is a reaction gas, 5 is a substrate, 7
8 is a reaction gas supply port, 8 is a reaction gas discharge port, and 9 is a substrate loading table.

上記のように構成された半導体製造装置においては、紫
外線ランプ２２は反応室１内にあるため、これを基板５
に接近させることができる。従って基板５面の照射強度
は増し、薄膜の形成速度は増加する。In the semiconductor manufacturing apparatus configured as described above, since the ultraviolet lamp 22 is located inside the reaction chamber 1, it is connected to the substrate 5.
can be brought close to. Therefore, the irradiation intensity on the surface of the substrate 5 increases, and the rate of thin film formation increases.

第２図は、この発明の他の実施例を示し、これは不活性
ガス供給口１１を備え、かつ紫外線ランプ２２と基板５
との間に石英ガラス薄板１２からなる仕切り板を設けた
ものである。図中、第１図と同一符号は同−又は相当部
分を示し、なおここで、石英ガラス薄板１２の上側部分
、下側部分では圧力は等しく保たれているため、該ガラ
スの厚みは薄くてもよい。FIG. 2 shows another embodiment of the invention, which includes an inert gas supply port 11 and an ultraviolet lamp 22 and a substrate 5.
A partition plate made of a thin quartz glass plate 12 is provided between the two. In the figure, the same reference numerals as those in FIG. Good too.

この装置では、紫外線ランプ２２と基板５との間を仕切
る石英ガラス薄板１２は、反応ガス４が紫反応室１内の
ガスの流れを安定にする。In this device, a thin quartz glass plate 12 partitioning between an ultraviolet lamp 22 and a substrate 5 stabilizes the flow of reaction gas 4 in the violet reaction chamber 1 .

また不活性ガス供給口１１から供給される不活及び石英
ガラス薄板１２に膜が堆積するのを防止する作用をする
。It also acts to prevent a film from being deposited on the inert and quartz glass thin plates 12 supplied from the inert gas supply port 11.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明に係る半導体製造装置によれば
、光源を反応室内に設けたので、該光源を基板に接近さ
せることでき、これにより基板面上の照射強度を増大し
て薄膜の形成速度を速めることができる効果がある。As described above, according to the semiconductor manufacturing apparatus according to the present invention, since the light source is provided in the reaction chamber, the light source can be brought close to the substrate, thereby increasing the irradiation intensity on the substrate surface and forming a thin film. It has the effect of increasing speed.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例による半導体製造装置を示す
断面側面図、第２図はこの発明の他の実施例を示す断面
側面図、第３図は従来の光応用半導体製造装置の断面側
面図である。 １は反応室、２２は紫外線ランプ（光源）、４は反応ガ
ス、５は基板、１０は不活性ガス、１１は不活性ガス供
給口、１２は石英ガラス薄板（仕切り板）である。 なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a cross-sectional side view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional side view showing another embodiment of the present invention, and FIG. 3 is a cross-sectional view of a conventional optical semiconductor manufacturing apparatus. FIG. 1 is a reaction chamber, 22 is an ultraviolet lamp (light source), 4 is a reaction gas, 5 is a substrate, 10 is an inert gas, 11 is an inert gas supply port, and 12 is a quartz glass thin plate (partition plate). Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (3)

【特許請求の範囲】[Claims] （１）反応室内の反応ガスに光源からの光を投射して光
化学反応を生じさせ該反応ガス中に置かれた基板上に薄
膜を形成させる半導体製造装置において、上記光源が上
記反応室内に設けられていることを特徴とする半導体製
造装置。(1) In a semiconductor manufacturing apparatus that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, the light source is provided in the reaction chamber. A semiconductor manufacturing device characterized by: （２）上記反応室には、反応に関与しない不活性ガスを
供給する不活性ガス供給口が設けられていることを特徴
とする特許請求の範囲第１項記載の半導体製造装置。(2) The semiconductor manufacturing apparatus according to claim 1, wherein the reaction chamber is provided with an inert gas supply port for supplying an inert gas that does not participate in the reaction. （３）上記反応室には、上記光源と上記基板との間を仕
切る石英ガラスの仕切り板が設けられていることを特徴
とする特許請求の範囲第１項又は第２項記載の半導体製
造装置。(3) The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the reaction chamber is provided with a quartz glass partition plate that partitions between the light source and the substrate. .
JP23074784A 1984-11-01 1984-11-01 Semiconductor manufacturing equipment Pending JPS61108126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23074784A JPS61108126A (en) 1984-11-01 1984-11-01 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23074784A JPS61108126A (en) 1984-11-01 1984-11-01 Semiconductor manufacturing equipment

Publications (1)

Publication Number Publication Date
JPS61108126A true JPS61108126A (en) 1986-05-26

Family

ID=16912653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23074784A Pending JPS61108126A (en) 1984-11-01 1984-11-01 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS61108126A (en)

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