JPS61131420A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To accelerate the forming speed of thin film on a substrate by means of augmenting the intensity of illumination on the substrate by a method wherein multiple light source bodies respectively comprising a quartz glass tube with a linear lamp covered with a focusing reflector with section of around C shape are arranged in a reaction chamber. CONSTITUTION:Multiple source bodies 12a-12e respectively comprising a cylindrical quartz glass tube 13 provided with a linear lamp 2 utilized as a light source 12 are arranged in a reaction chamber 1 so that a substrate 5 may be irradiated with augmented intensity of illumination by means of approaching the light source 12 to the substrate 5 up to an arbitrary distance. Besides, the light unit 12 provided with focusing reflectors 10 may augment the intensity of illumination by additionally reflected light by the reflectors 10. Through these procedures, the forming speed of thin film on the substrate 5 may be accelerated without unnecessarily augmenting the output of light source 12.

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention is a method of photochemically decomposing a reactive gas to form a thin film on a substrate (photo che+wical).
Vapor deposition: Hereinafter referred to as photoexcitation C
The present invention relates to a semiconductor manufacturing apparatus that forms a thin film using a VD method (referred to as a VD method).

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit devices, but in the conventional CVD method, the reaction gas is mainly heated to cause a chemical reaction, which results in a high reaction temperature. The thin film formed by this method is easily damaged.

Therefore, the photoexcitation CVD method is attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD. According to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods, plasma CVD methods, etc., and there is no damage to thin films. I can make a small meal.

Additionally, in the photo-excited CVD method, it is generally known that the intensity of light has a large effect on the rate of thin film formation.Under conditions where the substrate temperature, reactant gas composition ratio, and pressure are kept constant, 1 FIl! It is known that the rate of formation of is proportional to the intensity of light irradiation.

Figure 2 shows the basic configuration of a conventional thin film forming apparatus using such a photo-excited CVD method. In the figure, 1 is a reaction chamber whose inside is reduced to a high vacuum state during film formation, and 2 is a linear lamp. 3 is a heater for heating the substrate, 4 is a reactive gas such as silane, 5 is a substrate on which a thin film is formed, 6 is a light incident window made of a light-transmitting material, 7 is a reactive gas supply port, and 8 is a reaction chamber. 9 is a gas discharge port for discharging the gas 4a of the substrate 5;
It is a fixed stand on which to place.

Incidentally, the pressure inside the reaction chamber 1 is generally reduced to a high vacuum state, and the walls of the reaction chamber 1 and the light entrance window 6 made of a light-transmitting material are naturally constructed with a structure and a thickness that can withstand this pressure.

In this apparatus, when a reaction gas 4 is introduced into a reaction chamber l from a supply lower, the reaction gas 4 is excited and decomposed by a light beam projected from an entrance window 6. The resulting reaction products are deposited on the substrate 5 heated at a low temperature by the heater 3, and a thin film is formed on the substrate 5. Gas 4 after the reaction
a is discharged from the discharge port 8.

[Problems to be Solved by the Invention] In this conventional semiconductor manufacturing apparatus, the light entrance window 6 is provided in the reaction chamber 1 as described above, and light is projected from the light source 2 provided outside the reaction chamber 1. However, in order to speed up the formation of a thin film on the substrate 5, it is necessary to increase the illuminance of the light on the substrate 5, and for this purpose a light source with a higher output is used, but the distance between the substrate 5 and the light source 2 It is necessary to reduce the distance and increase the illuminance on the substrate 5. However, it is currently difficult to find a practical light source with a long life and high output, and it is also possible to shorten the distance between the substrate 5 and the light source 2 while maintaining the conventional structure. It is extremely difficult to attach the light entrance window 6 to the reaction chamber 1 with a structure that can withstand high vacuum pressure.This invention was made to solve these problems. The object of the present invention is to obtain a semiconductor manufacturing apparatus that can increase the illuminance of light on a substrate.

[Means for solving problems]

A semiconductor manufacturing apparatus according to the present invention includes a plurality of light source bodies each having a linear lamp covered with a condensing reflector having a substantially C-shaped cross section arranged in a quartz glass tube in a reaction chamber. It was used as a light source.

[Effect]

In this invention, a light source body consisting of a linear lamp covered with a condensing reflector plate placed inside a quartz glass tube is placed in a reaction chamber.
Since the light source is cast as a light source, as the light source approaches the substrate, the illuminance of the light on the substrate increases and 311111 is formed quickly.Also, by adjusting the direction of the light source, the illuminance of the light on the substrate increases. The illuminance distribution of light in the direction perpendicular to the axis of the light source becomes uniform.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention. In the figure, 1 is a reaction chamber, 13 is a cylindrical quartz glass tube, 12a to 12e is a linear lamp 2 in the quartz glass tube 13, and a condensing and reflecting plate 10 with a substantially C-shaped cross section covering it. The light source body 12 is a light source constructed by arranging the light source bodies 12a to 12e in parallel in the reaction chamber 1 at equal intervals. 3 is a heater for heating the substrate, 4 is a reaction gas, 5 is a substrate, 7 is a reaction gas supply port, 8 is a gas discharge port for discharging the gas 4a after the reaction, and 9 is a substrate loading stand.

Next, the effects will be explained.

In this device, the reaction gas 4 is supplied from the supply lower to the reaction chamber 1.
while each cylindrical quartz glass tube 1 of the light source 12
Light is projected from the heater 3 to cause a photochemical reaction in the reaction gas 4, and a thin film is formed on the substrate 5 heated by the heater 3.

In this apparatus, the light sources 128 to 126 each having one linear lamp disposed inside the cylindrical quartz glass tube 13 are used as light sources, and since the light source 12 is provided in the reaction chamber 1, the light The illuminance of the light on the substrate 5 can be increased by bringing the mtz closer to the substrate 5 to an arbitrary distance. Furthermore, since the light source 12 is provided with the condensing reflector plate 10, the light reflected by the reflector plate 10 is also added, making it possible to further increase the illuminance.

Therefore, without increasing the output of the light source more than necessary, the board 5
The rate of formation of a thin film thereon can be increased. Further, by arranging the light source bodies 123 to 12e in parallel at equal intervals and adjusting the direction of the opening of the condensing reflector plate 10 of each of the light source bodies 12a to 12a, the light source bodies 12a to 12e on the substrate 5 can be arranged in parallel.
The illuminance distribution of light in the direction perpendicular to the axis of 12e can be made sufficiently uniform.

Further, at this time, since the condenser 3 reflection plate 10 is located on the side opposite to the substrate 5, no extra photochemical reaction occurs and no reaction products adhere to each of the quartz glass tubes 13.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention, a plurality of light source bodies including a single linear lamp covered with a condensing reflector in a quartz glass tube are used as light sources, and the light source is installed in the reaction chamber, it is possible to increase the illuminance of the light on the substrate and speed up the formation of the thin film, and the direction of the light source can be adjusted, so it is possible to adjust the direction perpendicular to the axis of the light source on the substrate. This has the effect of making the illuminance distribution of light uniform.

[Brief explanation of drawings]

1 FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional side view of a conventional semiconductor manufacturing apparatus. l...Reaction chamber, 4...Reaction gas, 5...Substrate, 1
2... Light source, 12a-12e... Light source body, 13...
- Quartz glass tube, 2... linear lamp, 10... condensing reflector plate. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) In a semiconductor manufacturing device that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, the light source crosses inside a quartz glass tube. Semiconductor manufacturing characterized in that a plurality of light sources each comprising a linear lamp covered with a C-shaped condensing reflector are arranged in the reaction chamber. Device.