JPS61129814A - Manufacturing apparatus for semiconductor - Google Patents

Abstract

PURPOSE:To make it possible to form a film with uniform thickness over the whole surface of the base board in a simple construction, by using one linear lamp having plural linear sections arranged parallel to each other. CONSTITUTION:A reaction gas 4 introduced into the reaction chamber 1 produces a photo-chemical reactions with the light irradiated from the linear lamp 12, and the reaction products produced by this reaction deposit on the base board to form a this film on the base board. At this time, the illuminance distribution of the light is uniform since the plural linear sections 12a are provided for the irradiation section 12a of the lamp 12 is this construction. With this construction, the reaction gas on the base board is uniformly excited, making it possible to form a film with uniform thickness on the base board.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and in particular to optically pumped CV
D (photo chemical vapor
The present invention relates to an apparatus for forming WIII by a deposition method.

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit devices, but in the conventional CVD method, the reaction gas is mainly heated to cause a chemical reaction, which results in a high reaction temperature. M formed by
HI is susceptible to damage.

Therefore, recently, a photo-excited CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD. According to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods, plasma CVD methods, etc., and there is no damage to thin films. It can be reduced.

In general, in the photo-excited CVD method, it is known that the intensity of light has a large effect on the rate of thin film formation. It is known that the formation speed of is increased in proportion to the intensity of light irradiation.

Figure 5 shows the basic configuration of a conventional thin film forming apparatus using such a photo-excited CVD method. In the figure, 1 is a reaction chamber whose inside is reduced to a high vacuum state during film formation, and 2 is a linear lamp. 3 is a heater for heating the substrate; 4 is a reactive gas such as silane; 5 is a substrate on which a thin film is formed; 6 is a light incident window made of a light-transmitting material; 7 is a reactive gas supply port; 8 is a post-reaction 9 is a gas discharge port for discharging the gas 4a of the substrate 5;
It is a fixed stand on which to place.

In this conventional device, the reaction gas 4 is supplied from the supply lower to the reaction chamber 1.
When introduced into the reactor gas 4, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction products are deposited on the substrate 5 heated at a low temperature by the heater 3, and the gas 4a after the zero reaction in which a thin film is formed on the substrate 5 is discharged from the exhaust port 8.

[Problems to be Solved by the Invention] By the way, in this conventional device, a single linear lamp is used as the light source 2, but the illuminance of the light from this linear lamp on the substrate 5 is different from the axis of the lamp. The further outward in the perpendicular direction, the further away from the lamp it is, the weaker it becomes.Therefore, in this conventional device, the film formation rate at both ends of the substrate 5 in the direction perpendicular to the lamp axis is slower than in the central part, and the thickness is thinner, resulting in the IEJ being formed.
There was a problem that the film thickness of IjI became non-uniform.

The present invention has been made in view of these conventional problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus that can eliminate differences in illuminance on a substrate and form a thin film with a uniform thickness.

[Means for solving problems]

A semiconductor manufacturing apparatus according to the present invention uses a single linear lamp having a plurality of mutually parallel linear portions as a light source.

[Effect]

In this invention, the plurality of linear portions uniformly irradiates the entire substrate with light, eliminating differences in illuminance on the substrate.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 and 2 show a semiconductor manufacturing apparatus according to an embodiment of the present invention, in which 1 is a reaction chamber, 3 is a heater for heating a substrate, 4 is a reaction gas, 5 is a substrate, and 6 is a light transmitting device. 7 and 8 are a reaction gas supply port and a discharge port, respectively, and 9 is a fixing table for loading a substrate.

Reference numeral 12 denotes a linear lamp disposed above the light entrance window 6 of the reaction chamber 1. The irradiation part 12a of the linear lamp 12 has six linear parts 12b that are parallel to each other, and the reason why it is so wide is that Since the illuminance on the substrate 5 becomes stronger toward the center due to the overlap of the light from each of the linear portions 12b, this increased illuminance is corrected by widening the interval at the center, thereby reducing the illuminance over the entire surface of the substrate 5. This is to make it uniform. Therefore, the distance between the linear portions 12b is appropriately selected so that the illuminance distribution on the substrate 5 is uniform. In addition, the irradiation section 12
Two connecting parts 12c are integrally formed at both ends of the reconnecting part 12c, and one electrode part 12d for supplying power to the irradiating part 12a is formed at the upper end of the reconnecting part 12c.

Next, the effects will be explained.

In the apparatus of this embodiment, as in the conventional apparatus described above, the reaction gas 4 introduced into the reaction chamber 1 causes a photochemical reaction by the light from the linear lamp 12, and the resulting reaction product is heated by the heater 3. A thin film is formed on the substrate 5.

At this time, in the conventional example described above, there was a problem that the illuminance distribution of the light on the substrate 5 was uneven in the direction perpendicular to the axis of the linear lamp 2, but in this embodiment, the six linear parts 12b are They are provided in parallel, and the distance between them is wider towards the center, so the illuminance distribution of the light becomes uniform, and thereby the reactive gas on the substrate 5 is excited uniformly. Therefore, in this embodiment, the thickness is uniform. A similar thin film can be formed on the substrate 5.

Furthermore, in this embodiment, power is supplied to the six linear parts 12b through one electrode part 12d, so the number of electrodes is 1/6 of that in the case where, for example, six linear lamps are arranged in parallel. This greatly simplifies the structure of the power supply section.

In the above embodiment, the case where the light source consists of six linear portions 12b has been described, but the number of linear portions 12b is not limited to six, and can vary depending on the size of the substrate 5 on which a thin film is to be formed. It is selected as appropriate based on the following. Furthermore, in the above embodiment, a case was explained in which the spacing between the linear portions 12b is wider toward the center, but in the present invention, this spacing does not necessarily have to be as in this embodiment; for example, as shown in FIGS. As shown in FIG. 4, all the linear portions 12b may be arranged at equal intervals, and even in this case, the illuminance distribution of the light on the substrate 5 can be made more uniform than in the case where one linear lamp is disposed. Can be done.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention,
Since a single linear lamp having a plurality of linear portions is provided as a light source, a thin film having a uniform thickness can be formed over the entire surface of the substrate with a simple structure, and the film quality can be greatly improved.

[Brief explanation of drawings]

1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, 2nd WJ is a plan view thereof, and 31st! 1 is a cross-sectional side view showing a modification of the above embodiment, FIG. 4 is a plan view thereof, and FIG. 5 is a cross-sectional side view of a conventional semiconductor manufacturing apparatus. DESCRIPTION OF SYMBOLS 1...Reaction chamber, 4...Reaction gas, 5...Substrate, 1
2... Linear lamp, 12b... Linear part.

Claims (3)

[Claims] (1) In a semiconductor manufacturing apparatus that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, a plurality of light sources are arranged parallel to each other. 1. A semiconductor manufacturing device characterized in that the lamp is a single linear lamp having a linear portion. (2) The semiconductor manufacturing apparatus according to claim 1, wherein the distance between the linear portions is wider toward the center. (3) The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the linear portion is arranged in a plane parallel to the substrate.