JPS61131433A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To enable to form a thin film having the uniform film thickness over the whole of the substrate by a method wherein a light source that liner lamps are integrated in the quarts glass tube of the reaction chamber in such a way that when the heights of the plural linear parts of the linear lamps from the substrate are seen as a whole, the central linear parts among the linear parts particularly become higher from the substrate are used as the light source of the title equipment. CONSTITUTION:A light source that two linear lamps 12 are arranged in a cylindrical quarts glass tube 13 is used as this light source. By providing this light source 22 having the long luminous wavelength in reaction chamber 1, the light source 22 can be made to get near a substrate 5 to an arbitrary distance and the illuminance on the substrate 5 can be raised. Moreover, when the heights of the plural linear parts 12a of the two linear lamps 12 from the substrate 5 are seen as a whole, the central linear parts among the linear parts 12a are particularly arranged in such a way as to become high from the substrate 5. Accordingly, the illuminance distribution of light in the axis direction of the quarts glass tube 13 on the substrate 5 can be sufficiently uniformized. As a result, a thin film having the uniform film thickness can be formed over the whole of the substrate 5.

Description

Detailed Description of the Invention [Industrial Field of Application] This invention relates to a method of photochemically decomposing a reactive gas to form a thin film on a substrate.
Apour deposition: Hereinafter referred to as photoexcitation CV
[Conventional technology] The CVD method is used for forming thin films in integrated circuit devices.
Although it is an important technology in ~, the conventional CVD method is
The reaction gas is mainly heated to cause a chemical reaction, and therefore the reaction temperature becomes high, and the thin film formed thereby is easily damaged.

Therefore, recently, a photo-excited CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD. According to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods and plasma CVD methods, and damage to thin films can be reduced. It can be reduced.

In general, in the photo-excited CVD method, it is known that the intensity of light has a large effect on the rate of thin film formation. It is known that the rate of formation of light increases in proportion to the irradiation intensity of light.

Figure 4 shows the basic configuration of a conventional thin film forming apparatus for such a photo-excited CVD method. In the figure, 1 is a reaction chamber whose inside is reduced to a high vacuum during film formation, 3 is a light source consisting of a linear lamp, 3 is a heater for heating the substrate, 4 is a reactive gas such as silane, 5 is a substrate on which the I film is formed, 6 is a light incidence window made of a light-transmitting material, and 7 is a reactive gas supply port , 8 is a gas outlet for discharging the gas 4a after the reaction, and 9 is a fixing table on which the substrate 5 is placed.

Incidentally, the pressure inside the reaction chamber 1 is generally reduced to a high vacuum state, and the walls of the reaction chamber 1 and the light entrance window 6 made of a light-transmitting material are of course constructed with a structure and plate thickness capable of withstanding this pressure.

In this apparatus, when a reaction gas 4 is introduced into the reaction chamber 1 from the supply lower, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction product is deposited on the substrate 5 heated at a low temperature by the heater 3, and a thin film is formed on the substrate 5. Gas after reaction 4
a is discharged from the discharge port 8.

[Problem that the invention seeks to solve]

In this conventional semiconductor manufacturing apparatus, the light entrance window 6 is provided in the reaction chamber 1 as described above, and light is projected from the light source 2 provided outside the reaction chamber 1. In order to increase the speed, it is necessary to increase the illuminance of the light on the substrate 5, and for this purpose, either use a light source with higher output, or shorten the distance between the substrate 5 and the light source 2, and increase the illuminance on the substrate 5. There is a need to. However, it is currently difficult to find a practical light source with a long life and high output, and it is also possible to shorten the distance between the substrate 5 and the light source 2 with the conventional structure by using a light-transmitting material between them. This was extremely difficult since the light entrance window 6 had to be installed in the reaction chamber 1 with a structure that could withstand high vacuum pressure. Furthermore, since a single linear lamp 2 is used as a light source, there is a problem that the illuminance of the light is concentrated near both ends of the lamp 2 on the substrate 5, making the illuminance distribution of the light uneven. Ta.

This invention has been made to solve these problems, and aims to provide a semiconductor manufacturing apparatus that can increase the illuminance of light on a substrate and make the distribution of light uniform on the substrate. It is something.

[Means for solving problems]

The semiconductor manufacturing apparatus according to the present invention includes a linear lamp or a plurality of linear lamps having a plurality of mutually parallel linear parts in a quartz glass tube in a reaction chamber. They are arranged so that the height from the substrate increases toward the center, and these are used as light sources.

[Effect]

In this invention, a light source consisting of one or more linear lamps arranged inside a quartz glass tube is provided in the reaction chamber, so that as the light source approaches the substrate, the illuminance of the light on the substrate increases, and the thin film formed quickly. In addition, since the single or multiple linear lamps are arranged so that the height of the mutually parallel linear portions as a whole increases from the center, the above-mentioned quartz glass tube on the substrate The illuminance distribution of the light in the axial direction becomes sufficiently uniform, and a thin film having a uniform thickness is formed over the entire substrate.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a cross-sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a plan view thereof, and FIG. 3 is a cross-sectional view taken along the line ■--■ in FIG. In each figure, 1 is a reaction chamber, 13 is a cylindrical quartz glass tube provided in the reaction chamber 1, 12 is two linear lamps provided in the quartz glass tube 13,
These are parallel to each other and their heights increase in sequence6
It has a plurality of linear portions 12a. , and said 2
The two linear lamps 12 are arranged so that the plurality of linear portions 12a thereof are in a mutually symmetrical positional relationship, and as a result, the plurality of linear portions 12a of the two lamps 12 as a whole are separated from the substrate 5. The height is higher towards the center.

Further, 12b is two connecting portions provided at both ends of each linear lamp 12, and 12c is one electrode provided at the upper end of both connecting portions 12b for supplying power to each linear lamp 2. Department. Reference numeral 22 denotes a light source comprising two linear lamps 12 disposed within the quartz glass tube 13.

Further, 3 is a heater for heating the substrate, 4 is a reaction gas, 5 is a substrate, 7 is a reaction gas supply port, 8 is a gas discharge port for discharging the gas 4a after the reaction, and 19 is a table on which the substrate 5 is placed. It is.

Next, the effects will be explained.

In this device, the reaction gas 4 is supplied from the supply lower to the reaction chamber 1.
On the other hand, light is projected from a cylindrical quartz glass tube 13 serving as a light source 22 to cause a photochemical reaction in the reaction gas 4, and a thin film is formed on the substrate 5 heated by the heater 3.

In this apparatus, two linear lamps 12 arranged inside a cylindrical quartz glass tube 13 are used as a light source, and this light source 22 with a long emission length is used as a lamp in the reaction chamber 1.
Since the light source 22 is provided in the substrate 5, the light source 22 can be brought close to the substrate to an arbitrary distance, and the illuminance of the light on the substrate 5 can be increased.

In addition, since the two linear lamps 12 are arranged so that the height of the plurality of linear portions 12a from the substrate is higher as viewed from the center as a whole, the quartz glass tube 1. The illuminance distribution of the light in the axial direction of 3 can be made sufficiently uniform, and a thin film with a uniform thickness can be formed over the entire substrate 5.

Further, in this embodiment, each linear lamp 12 has six linear portions 12a formed continuously, so each lamp 12 only needs one electrode portion 12c. The number of electrodes is 1/6 compared to when lamps are arranged in parallel.
This makes the structure of the power supply section very simple.

In the above embodiment, two linear lamps are used, and the height of the linear portions from the substrate is set so that the center one is higher as a whole, but the height of each linear portion from the substrate is The present invention is not limited to this, as long as the height is high at the center of the cylindrical quartz glass tube.

Further, in the above embodiment, the case where each linear lamp has six linear parts 12a has been described, but the number can be appropriately selected depending on the size of the substrate 5, etc.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention, one or more linear lamps having a plurality of mutually parallel linear portions are placed in a quartz glass tube in a reaction chamber. Since we used a built-in light source in such a way that the height of the shaped parts from the board is higher towards the center when viewed as a whole, the illuminance of the light on the board can be increased.
The formation speed of the WI film on the substrate can be improved, and the illuminance distribution of light on the substrate can be made uniform, so that a thin film with a uniform thickness can be formed.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a plan view thereof, and FIG. 3 is taken along m-m of FIG. 1.
FIG. 4 is a cross-sectional side view of a conventional semiconductor manufacturing apparatus. DESCRIPTION OF SYMBOLS 1... Reaction chamber, 22... Light source, 13... Quartz glass tube, 12... Linear lamp, 12a... Linear part,
4... Reactive gas, 5... Substrate. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (2)

[Claims] (1) In semiconductor manufacturing equipment, in which light from a light source is projected onto a reaction gas in a reaction chamber to cause a photochemical reaction and a thin film is formed on a substrate placed in the reaction gas, parallel A light source consisting of one or more linear lamps having a plurality of linear parts is used as a light source, and the plurality of linear parts of the linear lamps have a central height from the substrate when viewed as a whole. 1. A semiconductor manufacturing apparatus characterized in that the light source is located within the reaction chamber. (2) The above-mentioned linear lamp is characterized in that two linear lamps are arranged such that a plurality of linear portions of each linear lamp have a mutually symmetrical positional relationship. Semiconductor manufacturing equipment.