JPS61129816A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To form efficiently a thin film with an uniform thickness, by providing with a tube shaped reaction chamber having a planar section made of quartz glass, and by constituting a light source by line shaped lamps being arrayed in parallel to each other outside the planar section. CONSTITUTION:Reaction gas 7 introduced into the quartz glass tube 21 is excited and decomposed by light emitted from a light source 12, and the resulted reaction products are deposited on a substrate 4 to form a thin film thereon. In this case, line shaped lamps 12a are arrayed outside the upper planar section 21a of the quartz glass tube 21. Accordingly, the distance from the substrate 4 to the lamps becomes nearer so that illumination on the substrate 4 can be increased. Moreover, since the section of the quartz glass tube 21 over which the lamps 21a are being arrayed is planar, the lamps 12a can be positioned in a plane being parallel to the substrate 4 to result in an uniform illumination on the substrate 4, so that an uniform thickness thin film can be efficiently formed.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and in particular to optically pumped CV
D (photo chemical vapor
The present invention relates to an apparatus for forming a thin film using a deposition method.

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit devices, but in the conventional CVD method, the reaction gas is mainly heated to cause a chemical reaction, which results in a high reaction temperature. The thin film formed by this method is easily damaged.

Therefore, recently, a photo-excited CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD. According to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods, plasma CVD methods, etc., and there is no damage to thin films. It can be reduced.

In general, in the photo-excited CVD method, it is known that the illuminance of the light on the substrate has a large effect on the thin film formation rate.For example, under conditions where the substrate temperature, reactant gas composition ratio, and pressure are kept constant. Then, the formation speed of the i-film becomes faster in proportion to the illuminance.

Figures 3 and 4 show the basic configuration of a conventional semiconductor manufacturing apparatus using such a photo-excited CVD method. Its both ends are closed by the reaction chamber side wall 3, and 10 and 11 are reaction gas supply ports and curtain gas supply ports for supplying the reaction gas 7 and curtain gas 8 into the reaction chamber 1, respectively, and 13 is an exhaust gas supply port. This is a gas outlet for discharging 9. Reference numeral 2 denotes a light source consisting of a plurality of linear lamps 2a, and the linear lamps 2a are arranged outside the quartz glass tube 1 in the axial direction of the glass tube 1 and along the outer surface of the glass tube 1. arranged in parallel. 6 is a susceptor for mounting the substrate 4, and 5 is an infrared lamp for heating the substrate 4.

In this conventional device, when a reaction gas 7 and a curtain gas 8 are introduced into the quartz glass tube 1, the curtain gas 8 flows to cover the upper part of the inner surface of the quartz glass tube 1, and the reaction gas 4 is supplied to the light source. The reaction product generated by this is deposited on the substrate 4 heated at a low temperature by the infrared lamp 5, and as a result, a thin film is formed on the substrate 4, and the gas 9 after the reaction is It is discharged from the discharge port 13.

[Problem that the invention seeks to solve]

By the way, in the above-mentioned conventional apparatus, a quartz glass tube 1 with a circular cross section is used as a reaction chamber, so a large diameter glass tube is required to process a large area of a substrate. As the distance increases, the illuminance on the substrate becomes weaker and uneven.To solve this problem, the linear lamp 2
It becomes necessary to arrange the light source a in a complicated shape, resulting in a problem that the structure of the light source becomes complicated.

The present invention has been made in view of the above-mentioned conventional problems.
It is an object of the present invention to provide a semiconductor manufacturing apparatus that can efficiently form a thin film of uniform thickness on a large area substrate with a simple configuration.

[Means for solving problems]

The present invention provides a semiconductor manufacturing apparatus in which the reaction chamber is made of quartz glass and has a tubular shape with a flat part, and the light source is constituted by a plurality of linear lamps arranged in parallel outside the flat part.

[Effect]

In the present invention, the light source is disposed outside the flat part of the reaction chamber, and therefore the distance between the light source and the substrate is smaller than when the light source is disposed outside the cylindrical reaction chamber. The illuminance is increased, and the linear lamps can be arranged in a desired shape, thereby making the illuminance uniform on the substrate.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

1 and 2 show one embodiment of the present invention.

In the figure, the same reference numerals as those in Figures 3 and 4 indicate the same or corresponding parts, and 21 is a quartz glass tube that is a reaction chamber, which has an oval cross section and whose upper and lower surfaces are flat. 21a and 21b. 12 is a light source;
This is a light source consisting of five linear lamps 12a arranged in parallel in the axial direction of the glass tube 21 outside the upper flat part 21a of the quartz glass tube 21, and each linear lamp 12a is connected to the quartz glass tube 21. It is oriented perpendicular to the axis of the tube 21. Furthermore, on the outside of the lower flat portion 21b of the quartz glass tube 21, five infrared lamps 15 are arranged in parallel in the axial direction of the glass tube 21 in a direction perpendicular to the glass tube axis.

Next, the effects will be explained.

Even in the case of the apparatus of this embodiment, reaction products caused by stones are deposited on the substrate 4 and a thin film is formed on the substrate 4, as in the conventional apparatus.

At this time, in this embodiment, since the linear lamp 12a is arranged outside the upper flat part 21a of the quartz glass tube 21, the distance from the substrate 4 to the lamp 12a is outside the arc-shaped part as in the conventional case. When the quartz glass tube 21 is placed closer to the
Since the linear lamp 12a arrangement part is flat, this lamp 12a can be arranged in a plane parallel to the substrate 4, and the illuminance on the substrate 4 becomes uniform, resulting in a uniform film over the entire surface of the substrate 4. A thick thin film can be efficiently formed.

Furthermore, since the lamp 12a is arranged within a flat surface as described above, the device becomes compact.

In this way, in this embodiment, the light source 1 is placed on the entire surface of the substrate 4.
The illuminance from 2 increases and becomes uniform, and as a result, the uniformity of film thickness and manufacturing efficiency can be improved, and the structure of the device can be simplified and the device can be made smaller.

In the above embodiment, the reaction chamber is formed of a quartz glass tube, but in the present invention, the reaction chamber does not necessarily have to be formed of quartz glass, and at least the flat portion 212 may be made of quartz glass. In this case, the heater may be placed inside the reaction chamber.Also, in the above embodiment, the case where the light source 12 consists of five linear lamps 12a is explained, but the number of linear lamps 12a is determined by the process. It is selected appropriately depending on the size of the substrate to be used. Furthermore, in the above embodiment, a case has been described in which the linear lamps 12a are arranged in parallel at the same interval, but in the present invention, the arrangement interval does not necessarily have to be the same; for example, the center may be widened; By doing so, the illuminance distribution on the substrate can be made even more uniform.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention,
The reaction chamber is made of quartz glass and has a tubular shape with a flat part, and the light source is composed of linear lamps arranged in parallel outside the flat part, so that the illuminance on the substrate can be increased and uniformed. This has the effect of efficiently forming a thick Wi film.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional side view of a semiconductor manufacturing device according to an embodiment of the present invention, FIG. 2 is a cross-sectional front view thereof, FIG. 3 is a cross-sectional side view of a conventional semiconductor manufacturing device, and FIG. 4 is a cross-sectional front view thereof. It is. 4...Substrate, 7...Reactive gas, 12...Light source, 1
2a... Linear lamp, 21... Quartz glass tube (reaction chamber), 21a... Flat part.

Claims (1)

[Claims] (1) In a semiconductor manufacturing device that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, the reaction chamber is made of quartz glass. It is tubular with a flat part,
A semiconductor manufacturing apparatus characterized in that the light source is composed of linear lamps arranged in parallel outside the flat part.