JPS61131415A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To obtain a highly precise semiconductor in a highly efficient manner by a method wherein a reaction chamber is formed in a column shape having an almost isosceles triangled cross section, a linear lamp group is arranged outside the isosceles of the isosceles triangle as the source of light, a reaction gas feeding hole is positioned at both base angles of the isosceles triangle of the reaction chamber, and an exhaust hole is positioned at the top point. CONSTITUTION:Reaction gas 4 is introduced from the feeding holes 17a and 17b located on both ends of the lower part of a reaction chamber 11, and the gas is excitation-decomposed by the light projected from light-projecting windows 16a and 16b. The gas 4a after reaction is exhausted from the exhaust hole 18 provided in the vicinity of the top point of the reaction chamber 11. At this time, the reaction chamber 11 is formed into the column shape of isosceles triangle, and as the linear lamp groups of 12a and 12b are arranged along the isosceles of the linear lamps as the source of light, the distance between the source of light and a substrate 5 is reduced when compared with the device of conventional structure, and as a result, the illuminance of light is increased, thereby enabling to remarkably increase the speed of formation of a thin film when compared with the conventional device.

Description

[Detailed Description of the Invention] [Industrial Application Field] □ The present invention relates to semiconductor manufacturing equipment, and in particular to optically pumped CV
D (photo chemical'al vapor
The present invention relates to an apparatus for forming a thin film using a deposition method.

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit bags W, but the conventional CVD method mainly heats a reaction gas to cause a chemical reaction, and therefore the reaction temperature becomes high. The thin film formed thereby is easily damaged.

Therefore, recently, a photo-excited CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD. According to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods, plasma CVD methods, etc., and there is no damage to thin films. It can be reduced.

In general, in photo-excited CVD, it is known that the intensity of light has a large effect on the rate of thin film formation. It is known that the formation speed of is increased in proportion to the intensity of light irradiation. Therefore, in order to shorten the film formation time and increase efficiency, it is necessary to increase the intensity of light irradiation.

Figure 2 shows the basic configuration of a conventional thin film forming apparatus using such a photo-excited CVD method. A light source consisting of a low-pressure mercury lamp (hereinafter referred to as a linear lamp), 3 a heater for heating the substrate, 4 a reactive gas such as silane, 5 a substrate on which a thin film is formed, and 6 a light source consisting of a light transmitting material. 7 is the reaction gas supply port, 8 is the gas 4 after the reaction
9 is a fixing table on which the substrate 5 is placed.

In this apparatus, when a reaction gas 4 is introduced into the reaction chamber 1 from the supply lower, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction product is deposited on the substrate 5 heated at a low temperature by the heater 3, and a thin film is formed on the substrate 5. The gas 4 after the reaction is discharged from the discharge port 8.

[Problems to be Solved by the Invention] However, in the conventional device as described above, the distance between the light source and the substrate 5 becomes large due to its structure, and it is difficult to increase the intensity of light irradiation. Furthermore, in order to form a thin film of uniform thickness on a substrate, it is necessary to make the illumination intensity on the substrate uniform, but since the above-mentioned conventional device uses a single linear lamp 2 as a light source, Moreover, uniform illuminance can only be obtained in a very narrow range, which limits the size of the substrate on which a film can be formed at one time. As described above, the above-mentioned conventional apparatus has the problem that film formation time is long due to insufficient illuminance of light and non-uniformity of illuminance, resulting in poor efficiency.

Therefore, in order to shorten the film formation time, it is possible to use multiple linear lamps as light sources, but with this method, the irradiated light from each linear lamp is superimposed, resulting in The irradiation intensity becomes stronger than that at both ends, and the illuminance distribution becomes uneven.

This invention was made to solve these problems, and provides a semiconductor manufacturing apparatus that can irradiate uniform and strong light over a wide range and manufacture semiconductors efficiently with high precision. is intended to provide.

[Means for solving problems]

In the semiconductor manufacturing apparatus according to the present invention, the reaction chamber has a columnar shape with a substantially isosceles triangular cross section, and two of the reaction chambers serve as light sources.
A set of linear lamps is arranged on the outside of each of the two slopes, and furthermore, reaction gas supply ports are formed at both base corners of the isosceles triangle of the reaction chamber, and gas discharge ports are formed at the apex position. be.

[Effect]

In this invention, since linear lamp groups are arranged on the outside of each of the two slopes of the reaction chamber having a substantially isosceles triangular cross section, uniform and strong light is irradiated over a wide area, and even after the reaction Since the gas is discharged using its buoyancy, fogging of the light entrance window is prevented, and a thin film of uniform thickness can be formed on a wide area of the substrate at a high film formation rate.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows a semiconductor manufacturing apparatus according to an embodiment of the present invention, and in the figure, 11 is a reaction chamber formed in the shape of a column with an approximately isosceles triangular cross section, and the inside thereof is in a high vacuum state during film formation. The pressure is reduced to . And this reaction chamber 1
Reaction gas supply ports 17a and 17 for introducing the reaction gas 4 into the reaction chamber 11 are provided at both base corner positions of the isosceles triangle 1.
b, and a reaction gas outlet I8 for discharging the gas 4a after the reaction is formed at the apex position. 16a.

Reference numerals 16b denote light entrance windows made of a light-transmitting material, and these are provided opposite to each other at isosceles positions of the isosceles triangle of the reaction chamber 11. 12a.

Reference numeral 12b denotes a group of linear lamps arranged outside the light entrance windows 16a, 16b and parallel to the light entrance windows 16a, 16b, respectively, for optically exciting the reaction gas 4 in the reaction chamber 11.

Further, 5 is a substrate, 3 is a substrate heating heater for heating the substrate 5, and 19 is a substrate loading table provided so as to be slidable in the horizontal direction in the figure.
A table drive mechanism is provided which includes a connector 19a fixed to the connector 9, a ball screw 23° fitted to the connector 19a, and a motor (not shown) for rotationally driving the ball screw 23.

Next, the effects will be explained.

In this apparatus, a reaction gas 4 is introduced from supply ports 17a and 17b at both lower ends of a reaction chamber 11, and the reaction gas 4 is excited and decomposed by light projected from light entrance windows 16a and 16b. The reaction products produced by this are heated to the heater 3.
After the zero reaction, the gas 4a is deposited on the substrate 5 heated at a low temperature to form a thin film on the substrate 5, and is discharged from a gas outlet 18 provided near the top of the reaction chamber 11.

At this time, in the apparatus of this embodiment, the reaction chamber 11 is shaped like an isosceles triangular column, and the linear lamp groups 12a and 12b as a light source are arranged along the isosceles. The distance between the substrate 5 and the substrate 5 has become smaller, and as a result, the illuminance of the light has increased, and the thin film formation speed has been significantly improved compared to the conventional method.

In addition, in the case of the device of this embodiment, 1 is placed in the center of the substrate 5.
The illumination light from the linear lamp groups 12a, 12b on both sides is superimposed, and the illuminance in that area becomes stronger. ing. Therefore, the illuminance distribution of the light becomes substantially uniform over a wide range of the reaction chamber 11.

Therefore, according to the apparatus of this embodiment, it is possible to form a thin film on a substrate with a larger area at a faster speed than in the conventional method, and the film can be formed very efficiently. The shape of the reaction chamber 11 is an isosceles triangle whose base angle is approximately 30° when increasing illuminance, and approximately 15° when uniformizing illuminance distribution.
Each of these cases is the most desirable.

Also, paying attention to the flow of the reaction gas 4, the reaction gas 4 is 2
After being introduced from the two supply ports 17a and 17b, the reaction chamber 1
Therefore, the distance through which the reaction gas 4 flows is shorter than in conventional devices where it flows from one end of the reaction chamber to the other. ing.

Therefore, even when forming a thin film on a large-area substrate 5 as described above, the concentration of the reaction gas on the substrate 5 is kept uniform, and a thin film with a uniform thickness can be formed.

Further, as described above, as the reaction gas supplied from the supply port 171.17b approaches the middle part of the substrate 5, it is warmed by the heater 3 and the substrate 5 and tends to rise due to buoyancy. Since the outlet 18 is provided upward in the center, the gas that attempts to rise is discharged from the outlet 18 as it is. Therefore, it is possible to prevent reaction products from adhering to the light entrance windows 16a and 16b, and it is also possible to prevent a decrease in light irradiation intensity due to so-called fogging of the windows.

Furthermore, by sliding the substrate loading table 19 in the horizontal direction in the figure, each part of the substrate is exposed to light of the same illuminance for the same time, or to the reaction gas 4 of the same concentration for the same time. 12a, 12
Even if the illuminance of the light from b is non-uniform, the reaction gas 4
Even if the concentration is non-uniform, it is possible to compensate for this and manufacture a highly accurate semiconductor.

(Effects of the Invention) As described above, according to the semiconductor manufacturing apparatus according to the present invention, the reaction chamber has a columnar shape with a cross section of approximately isosceles triangle, and the linear lamp group as a light source is arranged on the isosceles side of the isosceles triangle. The reaction gas supply port was placed at both base corners of the isosceles triangle of the reaction chamber, and the discharge port was placed at the apex position.
It is possible to irradiate light with uniform and strong illuminance over a wide range, and it is also possible to prevent fogging of the light entrance window, making it possible to efficiently manufacture high-precision semiconductors over a long period of time. ′

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional configuration diagram of a conventional semiconductor manufacturing apparatus. 4... Reaction gas, 5... Substrate, 11... Reaction chamber,
12a, 12b... linear lamp group, 17a, 17b...
...Reaction gas supply port, 18...Reaction gas discharge port. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) In a semiconductor manufacturing apparatus in which light from a light source is projected onto a reaction gas in a reaction chamber to cause a photochemical reaction and a thin film is formed on a substrate placed in the reaction gas, the reaction chamber has a cross section of approximately 2. The reaction chamber has an equilateral triangular columnar shape, and a reaction gas supply port is formed at both base corners of the isosceles triangle of the reaction chamber, and a reaction gas discharge port is formed at the apex position, and the light source is located on the two slopes of the reaction chamber. A semiconductor manufacturing device comprising two groups of linear lamps arranged on the outside.