JPS61131417A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To enable to obtain a highly precise semiconductor in a highly efficient manner by a method wherein a reflection chamber is formed in column shape of almost isosceles triangle cross-section, and the linear lamp group covered by condensing and reflecting plates is arranged outside the isosceles of the isosceles triangle as a source of light. CONSTITUTION:A reaction chamber 11 is formed in column shape of isosceles triangle. As linear lamp groups 12a and 12b are arranged along the isosceles, the distance between a source of light and a substrate 5 is made smaller when compared with the device of the conventional structure. Besides, as the linear lamp groups 12a and 12b are covered by condensing and reflecting plates 20a and 20b, the illuminance of light is increased, and the speed of formation of a thin film is also improved remarkably when compared with the conventional device. The beams of light irradiated from the linear lamp groups 12a and 12b on both sides are overlapped each other at the center part of the substrate, and the illuminance at that part is increased. The center part of the linear lamp groups 12a and 12b on both sides are widely separated from the substrate 5. As a result, the illuminance distribution of light is almost made uniform over the wide range of the reaction chamber 11.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and in particular to optically pumped CV
D (photo chemical vapor
The present invention relates to an apparatus for forming WiIllI by a deposition method.

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit devices, but in the conventional CVD method, the reaction gas is mainly heated to cause a chemical reaction, which results in a high reaction temperature. formed by *
i* is easily damaged.

Therefore, recently, a photo-excited CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD. According to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods, plasma CVD methods, etc., and damage to WIII can be reduced. It can be reduced.

In addition, it is generally known that in the photo-excited CVD method, the intensity of light has a large effect on the thin film formation rate. It is known that the rate of film formation increases in proportion to the intensity of light irradiation. Therefore, in order to shorten the film formation time and increase efficiency, it is necessary to increase the intensity of light irradiation.

Figure 2 shows the basic configuration of a conventional i-film forming apparatus using such a photo-excited CVD method. 3 is a heater for heating the substrate, 4 is a reactive gas such as silane, 5- is a substrate on which a thin film is formed, 6 is a light-transmitting material 7 is a reaction gas supply port, 8 is a gas discharge port for discharging the gas 4a after the reaction, and 9 is a fixing table on which the substrate 5 is placed.

In this apparatus, when a reaction gas 4 is introduced into the reaction chamber 1 from the supply lower, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction product is deposited on the substrate 5 heated at a low temperature by the heater 3, and a thin film is formed on the substrate 5. The gas 4a after the reaction is discharged from the discharge port 8.

[Problem that the invention seeks to solve]

However, in the conventional device as described above, the distance between the light source and the substrate 5 becomes large due to its structure, and it is difficult to increase the intensity of light irradiation. Furthermore, in order to form a thin film of uniform thickness on a substrate, it is necessary to make the illumination intensity on the substrate uniform, but since the above-mentioned conventional device uses a single linear lamp 2 as a light source, Furthermore, uniform illuminance can only be obtained in a very narrow range, which limits the size of the substrate on which one film can be formed at a time. As described above, in the above-mentioned conventional apparatus, there was a problem that the film formation time was long (and the efficiency was poor) due to insufficient illuminance and non-uniformity of the illuminance. It is also possible to use multiple linear lamps, but with this method, the irradiation light from each linear lamp is superimposed, so that the irradiation intensity at the center of the board is stronger than at both ends. As a result, the illuminance distribution becomes uneven.

This invention was made to solve these problems, and provides a semiconductor manufacturing apparatus that can irradiate light with uniform intensity over a wide area and can manufacture semiconductors efficiently and with high precision. is intended to provide.

CB! ! Means for Solving the Problem] In the semiconductor manufacturing apparatus according to the present invention, the reaction chamber has a columnar shape with a cross section of approximately isosceles triangle, and two of the reaction chambers are used as light sources.
A group of linear lamps covered with condensing reflectors are arranged on the outside of each of the two slopes, and the reaction gas supply ports are located at both base corners of the isosceles triangle of the reaction chamber, and the gas discharge ports are located at the apex position. It was formed.

[Effect]

In this invention, a group of linear lamps each covered with a light condensing reflector is arranged on the outside of two slopes of a reaction chamber having a substantially isosceles triangular cross section.
Moreover, since the light is irradiated with strong illuminance and the gas after the reaction is discharged using its buoyancy, clouding of the light entrance window is prevented, and a film of uniform thickness can be formed on a wide area of the substrate with a fast film formation speed. A thin film is formed.

〔Example〕

Embodiments of the first invention will be described below with reference to the drawings.

FIG. 1 shows a semiconductor manufacturing apparatus according to an embodiment of the present invention, and in the figure, 11 is a reaction chamber formed in the shape of a column with an approximately isosceles triangular cross section, and the inside thereof is in a high vacuum state during film formation. The pressure is reduced to . And this reaction chamber 1
Reaction gas supply ports 17a, 17 for introducing the reaction gas 4 into the reaction chamber 11 are provided at both base corner positions of the isosceles triangle 1.
b, and a reaction gas outlet 18 is formed at the apex position for discharging the gas 4a after the reaction. 16a.

Reference numerals 16b denote light entrance windows made of a light-transmitting material, and these are provided opposite to each other at isosceles positions of the isosceles triangle of the reaction chamber 11. 12a.

Reference numeral 12b indicates a group of linear lamps arranged outside of the light incident windows 16a, 16b and parallel to the light incident windows 16a, 16b, and 20a, 20b indicate the linear lamp groups 12a, 1.
2b, which is a condensing and reflecting plate disposed to cover the linear lamp group 12a.

This is for effectively irradiating the light from 12b onto the substrate 5.

Further, 5 is a substrate, 3 is a substrate heating heater for heating the substrate 5, and 19 is a substrate loading table provided so as to be slidable in the horizontal direction in the figure.
A table drive mechanism is provided, which includes a connector 19a fixed to the connector 9, a ball screw 23° screwed to the connector 19a, and a motor (not shown) that rotationally drives the ball screw 23.
It is being kicked.

Next, the effects will be explained.

In this apparatus, a reaction gas 4 is introduced from supply ports 17a and 17b at both lower ends of a reaction chamber 11, and the reaction gas 4 is excited and decomposed by light projected from light entrance windows 16a and 16b. The reaction products generated thereby are deposited on the substrate 5 heated at a low temperature by the heater 3, and a thin film is formed on the substrate 5.The gas 4a after the reaction is provided near the top of the reaction chamber 11. The gas is discharged from the gas outlet 18.

At this time, in the apparatus of this embodiment, the reaction chamber 11 is formed into an isosceles triangular columnar shape, and the linear lamp groups 12a and 12b serving as light sources are arranged along the isosceles side of the column, so that it is different from the apparatus of the conventional structure. The distance between the light source and the substrate 5 is shortened, and the linear lamp groups 12a and 12b are covered with condensing reflectors 20a and 20b, so the illuminance of the light is increased and the thin film formation speed is also lower than that of the conventional one. This is a marked improvement compared to .

In addition, in the case of the device of this embodiment, the irradiated light from the linear lamp groups 12a-, 12b on both sides is superimposed at the central part of the substrate 5, and the illuminance of that part is strong (although the linear lamp groups 12a-, 12b on both sides 12b has a central portion that is distanced from the substrate 5. Therefore, the illuminance distribution of light is substantially uniform over a wide range of the reaction chamber 11.

Therefore, according to the apparatus of this embodiment, it is possible to form a thin film on a substrate having a larger area at a faster speed than in the conventional method, and it is possible to form a film very efficiently. The shape of the reaction chamber 11 is an isosceles triangle whose base angle is approximately 30° when increasing illuminance, and approximately 15° when uniformizing illuminance distribution.
Each of these cases is the most desirable.

Also, paying attention to the flow of the reaction gas 4, the reaction gas 4 is introduced from the two supply ports 17a and 17b, and then is discharged to the discharge port 18 above the center of the reaction chamber 11. Therefore, the distance through which the reaction gas 4 flows is shorter than that in the conventional apparatus in which the reaction gas 4 flows from one end of the reaction chamber to the other.

Therefore, even when forming a thin film on a large-area substrate 5 as described above, the concentration of the reaction gas on the substrate 5 is kept uniform, and a thin film with a uniform thickness can be formed.

Furthermore, in the case of this embodiment, the gas 4a after the reaction near the substrate 5
is warmed by the heater 3 and the like, rises due to buoyancy, and is discharged directly to the discharge port 18. Therefore, it is possible to prevent reaction products from adhering to the light entrance windows 16a and 16b, and it is also possible to prevent a decrease in light irradiation intensity due to so-called fogging of the windows.

Further, by sliding the substrate loading table 19 in the horizontal direction shown in the figure, each part of the substrate is exposed to light of the same intensity for the same time, or to the reaction gas 4 of the same concentration for the same time. shaped lamp group 12a,
Even if the illuminance of the light from 12b is non-uniform, or even if the concentration of the reaction gas 4 is unrestricted, these can be compensated for and a highly accurate semiconductor can be manufactured.

(Effects of the Invention) As described above, according to the semiconductor manufacturing apparatus of the present invention, the reaction chamber has a columnar shape with a substantially isosceles triangular cross section, and a group of linear lamps covered with a condensing reflector is used as a light source. The reactant gas supply ports are placed on the outside of the isosceles of the isosceles triangle, and the reaction gas supply ports are placed at both base corners of the isosceles triangle of the reaction chamber, and the discharge port is placed at the apex position, so that the gas is uniformly distributed over a wide range. It is possible to irradiate light with a high illumination intensity, and it can also prevent curving of the light entrance window, making it possible to efficiently manufacture high-precision semiconductors over a long period of time.

[Brief explanation of drawings]

FIG. 1 is a sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional semiconductor manufacturing apparatus. 4... Reaction gas, 5... Substrate, 11... Reaction chamber,
12a+12b"" linear lamp group, 17a, 17b・-
Reaction gas supply port, 18...Reaction gas discharge port, 20a. 20b... Light condensing reflector. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) In a semiconductor manufacturing apparatus in which light from a light source is projected onto a reaction gas in a reaction chamber to cause a photochemical reaction and a thin film is formed on a substrate placed in the reaction gas, the reaction chamber has a cross section of approximately 2. The reaction chamber has an equilateral triangular columnar shape, and a reaction gas supply port is formed at both base corners of the isosceles triangle of the reaction chamber, and a reaction gas discharge port is formed at the apex position, and the light source is located on the two slopes of the reaction chamber. A semiconductor manufacturing device comprising two sets of linear lamps arranged on the outside and each covered with a condensing reflector.