JPS61129819A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To form a thin film with a uniform film thickness without resulting in illumination diferences on a substrate, by employing as a light source a plural of line shaped lamps or a lamp, having a plural of line sections with a higher height from the substrate as nearer the center. CONSTITUTION:Reaction gas 4 introduced into the reaction chamber 1 causes photochemical reaction by light from line shaped lamps 12, and the resulted reaction products are deposited on a substrate 5 to form a thin film thereon. In this structure, a plural of line sections 12b are provided in parallel to each other and the height of the line sections 12b from the substrate 5 is higher as nearer the center, so that the light illumination distribution can be made uniform and thus the gas 4 over the substrate 5 can be excited uniformly. Accordingly, an uniform-thickness thin film can be formed on the substrate 5.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and in particular to optically pumped CV
D (photo chemical vapor
The present invention relates to an apparatus for forming an im by a deposition method.

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit devices, but in the conventional CVD method, the reaction gas is mainly heated to cause a chemical reaction, which results in a high reaction temperature. The thin film formed by this method is easily damaged.

Therefore, recently, a photo-excited CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD, and according to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods, plasma CVD methods, etc., and damage to the im is also reduced. It can be reduced.

In general, in photo-excited CVD, it is known that the intensity of light has a large effect on the rate of thin film formation. It is known that the rate of formation increases in proportion to the intensity of light irradiation.

Figure 3 shows conventional WII using such a photo-excited CVD method.
ll! The basic configuration of the forming device is shown, and in the figure, 1
is a reaction chamber whose inside is reduced to a high vacuum state during film formation,
2 is a light source made of a linear lamp, 3 is a heater for heating the substrate, 4 is a reactive gas such as silane, 5 is a substrate on which a thin film is formed, 6 is a light entrance window made of a light-transmitting material, and 7 is a reactive gas a supply port; 8 is a gas discharge port for discharging the gas 4a after the reaction;
Reference numeral 9 denotes a fixing base on which the substrate 5 is placed.

In this conventional device, the reaction gas 4 is supplied from the supply lower to the reaction chamber 1.
When introduced into the reactor gas 4, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction products are deposited on the substrate 5 heated at a low temperature by the heater 3, and the gas 4a after the zero reaction in which WIII is formed on the substrate 5 is discharged from the exhaust port 8.

[Problem that the invention seeks to solve]

By the way, in this conventional device, a single linear lamp is used as the light source 2, but the illuminance of the light from this linear lamp on the substrate 5 is perpendicular to the axis of the lamp.・The direction outside is far from the lamp. Therefore, with this conventional device,
There is a problem in that the film formation rate at both ends of the substrate 5 in the direction perpendicular to the lamp axis is slower than that at the center, resulting in a thinner film, resulting in non-uniform film thickness of the formed thin film.

The present invention has been made in view of these conventional problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus that can eliminate differences in illuminance on a substrate and form a thin film with a uniform thickness.

[Means for solving problems]

A semiconductor manufacturing apparatus according to the present invention uses, as a light source, one or more linear lamps having a plurality of linear lamps that are parallel to each other and have a higher height from the substrate at the center.

[Effect]

In this invention, the entire substrate is uniformly irradiated with light by the plurality of linear portions of the single or plural linear lamps, and there is no difference in illuminance on the substrate.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

1 and 2vIJ show a semiconductor manufacturing apparatus according to an embodiment of the present invention, in which 1 is a reaction chamber, 3 is a heater for heating a substrate, 4 is a reaction gas, 5 is a substrate, and 6 is a light transmitting material. 7 and 8 are a reaction gas supply port and a discharge port, respectively, and 9 is a fixing table for loading a substrate.

Reference numeral 10 denotes a light source disposed above the light incidence window 6 of the reaction chamber 1.
The irradiating portions 12a of each linear lamp 12 are parallel to each other, and the center of the fold 4144110 is raised so that the height from the substrate is higher at one end. Here, the reason why the center of the linear portion 12b is made higher is that the illuminance at the center of the substrate 5 is stronger due to the overlap of light from each linear portion 12b, whereas the illuminance on the substrate is weaker as it is farther from the light source. Therefore, by increasing the height of the central linear portion 12b, the illuminance increased due to the shape of the mold is corrected and the illuminance is made uniform over the entire surface of the substrate. Therefore, the height of each linear portion 12b from the substrate 5 is appropriately selected so that the illuminance distribution on the substrate 5 is uniform. Further, two connecting portions 12C are integrally formed at both ends of each of the irradiating portions 14a, and the reconnecting portions 12
One electrode portion 12d is formed at the upper end of C for supplying power to the irradiation portion 12a.

Next, the effects will be explained.

In the apparatus of this embodiment, as in the conventional apparatus described above, the reaction gas 4 introduced into the reaction chamber 1 causes a photochemical reaction by the light from the linear lamp 12, and the resulting reaction product is heated by the heater 3. A thin film is formed on the substrate 5.

In the conventional example described above, there was a problem that the illuminance distribution of the light on the substrate 5 was uneven in the direction perpendicular to the axis of the linear lamp 2, but in this embodiment, the 12 linear parts 12b are Since they are provided in parallel and the height from the substrate 5 is higher at the center, the illuminance distribution of the light is uniform, and thereby the reaction gas on the substrate 5 is uniformly excited. In this example, a thin film with a uniform thickness can be formed on the substrate 5.

Further, in this embodiment, there are only two electrode portions 12d for supplying power to the 12 linear portions 12b. The number is reduced to 1/6, and the structure of the power supply section can be made very simple.

In addition, in the above actual example t/11, the case where the light R1O consists of two linear lamps 12 was explained, but this light source 1
0 may be constituted by one linear lamp, and in this way, the structure of the power supply section can be further simplified.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention,
Since a single or plural linear lamps each having a plurality of linear parts whose height from the substrate is higher toward the center as the light source is used, a thin film having a uniform thickness can be formed over the entire surface of the substrate with a simple structure. It has the effect of greatly improving film quality.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2F! ! J is a plan view thereof, and FIG. 3 is a cross-sectional side view of the conventional semiconductor manufacturing apparatus. DESCRIPTION OF SYMBOLS 1... Reaction chamber, 4... Reaction gas, 5... Substrate, l
O... Light source, 12... Linear lamp, 12b... Linear part.

Claims (2)

[Claims] (1) In a semiconductor manufacturing apparatus that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, a plurality of light sources are arranged parallel to each other. 1. A semiconductor manufacturing device comprising one or more linear lamps having a linear portion, wherein the height of the linear portions from the substrate is higher as viewed from the center as a whole. (2) The above-mentioned linear lamps include two linear lamps arranged in a mutually symmetrical positional relationship such that the height of the linear portions from the substrate is higher as viewed from the center as a whole. A semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is a semiconductor manufacturing apparatus.