KR102541982B1 - System for Processing Substrate and Method for Processing Substrate - Google Patents

Abstract

The present invention relates to a substrate processing system and a substrate processing method. The substrate processing system includes: a process chamber which performs a processing process on a substrate; a load lock chamber which primarily heats the edge of the substrate; and a heating chamber located between the process chamber and the load lock chamber and secondarily heating the center of the substrate where the edge is primarily heated. According to the present invention, during the processing process for the substrate, the substrate processing system can reduce the amount of residual fluid discharged from the substrate.

Description

Substrate processing system and substrate processing method {System for Processing Substrate and Method for Processing Substrate}

The present invention relates to a substrate processing system that performs a processing process on a substrate such as a deposition process.

In general, in order to manufacture solar cells, semiconductor devices, display devices, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, the substrate process, such as a deposition process of depositing a thin film of a specific material on a substrate, a photo process of selectively exposing a thin film using a photosensitive material, and an etching process of forming a pattern by selectively removing the thin film of an exposed portion, etc. processing takes place. A thin film may be fabricated on the substrate through a processing process for such a substrate.

This treatment process may be performed through a substrate treatment system. A substrate processing system according to the prior art includes a load lock chamber for changing an internal pressure between vacuum and atmospheric pressure, and a process chamber connected to the load lock chamber. After the substrate is supplied to the process chamber via the load lock chamber, the processing process is performed in the process chamber.

Here, as the processing process is performed while the substrate is located inside the process chamber, residual fluid such as moisture and residual gas may be discharged from the substrate. Due to such residual fluid, the substrate processing system according to the prior art has a problem in that it is difficult to improve the quality of the substrate on which the processing process has been performed.

The present invention has been made to solve the above-described problems, and is to provide a substrate processing system and a substrate processing method capable of reducing the amount of residual fluid discharged from a substrate during a substrate processing process.

In order to solve the problems as described above, the present invention may include the following configuration.

A substrate processing system according to the present invention includes a process chamber for performing a processing process on a substrate; a load lock chamber for primarily heating an edge of the substrate; and a heating chamber positioned between the process chamber and the load lock chamber and secondarily heating a center of the substrate whose edge is primarily heated.

In the substrate processing system according to the present invention, the load lock chamber includes one or a plurality of upper heaters configured to heat an upper edge of the substrate on the upper side of the substrate; and one or a plurality of lower heaters configured to heat an edge of a lower surface of the substrate at a lower side of the substrate.

In the substrate processing system according to the present invention, the heating chamber may include one or a plurality of heaters for heating the entire substrate transported from the load lock chamber.

In the substrate processing system according to the present invention, the upper heater and the lower heater may heat edges of the substrate to which different sides belong.

In the substrate processing system according to the present invention, the load lock chamber includes an upper heater emitting heating light from an upper side of the substrate toward an upper edge of the substrate; and an upper reflector for reflecting the heating light emitted from the upper heater toward the substrate.

In the substrate processing system according to the present invention, the load lock chamber includes a first entrance and exit for the substrate to enter and exit; and a first removal processing unit that removes organic materials by emitting heating light toward the substrate being transported to a load-lock position through the first entry/exit unit.

In the substrate processing system according to the present invention, the load lock chamber may include a plurality of first removal processing units. The first removal processing units may be spaced apart from each other along a transfer direction of the substrate transferred to the load lock position through the first entrance and exit unit.

In the substrate processing system according to the present invention, the first removal processing unit may emit heating light toward the first removal processing region through which the entire substrate passes.

In the substrate processing system according to the present invention, the load lock chamber may include an upper heater for heating the top edge of the substrate. The first removal processor may stop emitting heating light when the substrate is positioned at the load-lock position. The upper heater may start heating the upper surface edge when the substrate is positioned at the load-lock position or start heating the upper surface edge when the inside of the load-lock chamber is converted into a vacuum.

In the substrate processing system according to the present invention, the load lock chamber includes a second entrance and exit for the substrate to enter and exit; and a second removal processing unit that removes organic materials by emitting heating light toward the substrate being transferred from the load lock position toward the second entrance and exit unit. The second removal processing unit may emit heating light toward a second removal processing region through which the entire substrate passes.

A substrate processing method according to the present invention includes the steps of firstly heating an edge of a substrate brought into a load lock chamber; when the substrate is transferred from the load lock chamber to the heating chamber, secondarily heating the center of the substrate whose edges are primarily heated; and performing a processing process on the substrate firstly heated at the edge and secondarily heated at the center when the substrate is transferred from the heating chamber to the process chamber.

In the substrate processing method according to the present invention, the step of primarily heating the edge of the substrate may include heating the upper edge of the substrate and heating the lower edge of the substrate. The step of heating the top edge of the substrate and the step of heating the bottom edge of the substrate may be performed simultaneously.

In the substrate processing method according to the present invention, in the step of secondary heating the center of the substrate, when the center of the substrate is secondaryly heated, the edge of the substrate may also be heated.

The substrate processing method according to the present invention may include, before the step of firstly heating the edge of the substrate, removing organic materials by emitting heating light toward the substrate carried into the load lock chamber. .

In the substrate processing method according to the present invention, in the step of removing the organic material, emission of the heating light may be stopped when the substrate is placed in a load-lock position. In the primary heating of the edge of the substrate, the primary heating of the edge of the substrate may be started when the substrate is positioned at the load lock position or when the inside of the load lock chamber is converted into a vacuum.

The substrate processing method according to the present invention may include, after the step of firstly heating the edge of the substrate, removing organic materials by emitting heating light toward the substrate carried out from the load lock chamber. .

According to the present invention, the following effects can be achieved.

According to the present invention, residual fluid may be discharged by heating an edge of a substrate before the substrate is transported into a process chamber. Accordingly, the present invention can reduce the amount of residual fluid discharged from the edge of the substrate in the process chamber. Therefore, the present invention can improve the quality of the substrate on which the treatment process has been performed.

The present invention may be implemented such that the load lock chamber heats the edge of the substrate to discharge residual fluid, and the heating chamber heats the center of the substrate to discharge residual fluid. Accordingly, the present invention can more smoothly discharge the residual fluid from the substrate by reducing the temperature deviation between the edge and the center of the substrate. Therefore, the present invention can further improve the quality of the substrate on which the treatment process has been performed.

1 is a schematic block diagram of a substrate processing system according to the present invention
Figure 2 is a schematic configuration diagram of a process chamber in the substrate processing system according to the present invention
3 is a conceptual side view showing a state in which a heating chamber heats a substrate in the substrate processing system according to the present invention;
Figure 4 is a schematic plan view of a substrate for explaining the center of the substrate and the edge of the substrate in the substrate processing system according to the present invention
Figure 5 is a schematic side cross-sectional view of the load lock chamber in the substrate processing system according to the present invention
6 is a conceptual perspective view showing a plurality of upper heaters of the load lock chamber in the substrate processing system according to the present invention.
7 is a schematic cross-sectional plan view showing a chamber body and a first removal processing unit based on line II-II of FIG. 6;
8 is a schematic cross-sectional plan view showing a chamber body and a second removal processing part based on line II-II of FIG. 6;
9 is a schematic side cross-sectional view showing an example of a solar cell manufactured through a substrate processing system according to the present invention.
10 and 11 are schematic flow charts of a substrate processing method according to the present invention

Hereinafter, an embodiment of a substrate processing system according to the present invention will be described in detail with reference to the accompanying drawings. Meanwhile, FIGS. 2 and 5 may be side cross-sectional views based on line II of FIG. 6 .

Referring to FIG. 1 , a substrate processing system 1 according to the present invention performs a processing process on a substrate. The substrate may be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing system 1 according to the present invention may directly transfer the substrate or transfer the substrate by transferring a substrate tray on which the substrate is seated. The substrate processing system 1 according to the present invention may perform a deposition process of depositing a thin film on the substrate, an etching process of removing a part of the thin film deposited on the substrate, and the like.

A substrate processing system 1 according to the present invention may include a process chamber 2 , a heating chamber 3 , and a load lock chamber 4 .

Referring to FIGS. 1 and 2 , the process chamber 2 performs a processing process on a substrate. Inside the process chamber 2, processing processes such as a deposition process and an etching process for the substrate may be performed. Inside the process chamber 2, a substrate support 21 for supporting the substrate or the substrate tray (hereinafter, referred to as 'substrate 100'), and a processing unit disposed above the substrate support 21 (22) can be placed. The processing unit 22 may be implemented to inject gas for the processing process toward the substrate support unit 21 . The processing unit 22 may be implemented to generate plasma for the processing process. The substrate support part 21 and the processing part 22 may be coupled to the process chamber 2 so as to be disposed inside the process chamber 2 . Although not shown, a lid supporting the processing unit 22 may be coupled to the process chamber 2 .

The substrate processing system 1 according to the present invention may include a plurality of the process chambers 2 . The process chambers 2 may be connected to each other in an in-line manner. In this case, the substrate 100 is transferred to pass through the process chambers 2 sequentially, and in this process, processing processes for the substrate 100 may be sequentially performed. The substrate processing system 1 according to the present invention may include a transfer unit 10 for transferring the substrate 100 . The transfer unit 10 may be implemented to transfer the substrate 100 using a conveyor. The transfer unit 10 may be implemented to transfer the substrate 100 using a transfer robot. In this case, the transfer unit 10 may include at least one transfer chamber (not shown).

1 to 4 , the heating chamber 3 is disposed between the process chamber 2 and the load lock chamber 4 . The heating chamber 3 may heat the substrate 100 carried from the load lock chamber 4 . The substrate 100 may be transferred to the process chamber 2 after being heated by the heating chamber 3 . The heating chamber 3 may contribute to shortening the processing time in which the processing process is performed in the process chamber 2 by preheating the substrate 100 through heating. The heating chamber 3 may reduce the amount of residual fluid discharged from the substrate 100 in the process chamber 2 by discharging residual fluid such as moisture and residual gas from the substrate 100 through heating. there is. Accordingly, the heating chamber 3 can contribute to improving the quality of the substrate on which the processing process has been performed.

The heating chamber 3 may heat the center 110 of the substrate 100 . The center 110 is a region including the center of the substrate 100 and a portion spaced apart from the center of the substrate 100 by a predetermined distance. The center 110 may be disposed inside the edge 120 of the substrate 100 . The edge 120 is a region including a side of the substrate 100 and a portion spaced apart from the side of the substrate 100 by a predetermined distance. A boundary between the center 110 and the edge 120 may be preset by a worker.

The heating chamber 3 may include a heater 31 .

The heater 31 is for heating the substrate 100 . The heater 31 may be disposed inside the heating chamber 3 . The heater 31 may heat the center 110 of the substrate 100 . The heater 31 may be coupled to the heating chamber 3 so as to be disposed inside the heating chamber 3 . The heater 31 may be disposed outside the heating chamber 3 . The heater 31 may heat the substrate 100 by emitting heating light toward the substrate 100 . In this case, the heater 31 may heat the substrate 100 using a lamp heater emitting heating light. The heater 31 may heat the entire substrate 100 .

The heating chamber 3 may heat the upper surface of the substrate 100 using the heater 31 . In this case, the heater 31 may be disposed above the substrate 100 located in the heating chamber 3 . The heating chamber 3 may heat the lower surface of the substrate 100 using the heater 31 . In this case, the heater 31 may be disposed below the substrate 100 located in the heating chamber 3 . The heating chamber 3 may heat both the upper and lower surfaces of the substrate 100 . In this case, the heating chamber 3 may include a heater 31 for heating the upper surface of the substrate 100 and a heater 31' (shown in FIG. 3) for heating the lower surface of the substrate 100. can

The heating chamber 3 may include one or a plurality of heaters 31 that heat the entire substrate 100 carried from the load lock chamber 4 . Accordingly, in the substrate processing system 1 according to the present invention, the amount of residual fluid discharged from the substrate 100 in the heating chamber 3 can be further increased.

Although not shown, a heating support unit for supporting the substrate 100 may be coupled to the inside of the heating chamber 3 . A process of heating the substrate 100 may be performed while the substrate 100 is supported by the heating support unit.

Referring to FIGS. 1 to 6 , the load lock chamber 4 is connected to the heating chamber 3 . The load lock chamber 4 may accommodate and take out the substrate 100 by alternating vacuum and atmospheric pressure. When the substrate 100 is loaded from a supply unit (not shown), the internal pressure of the load lock chamber 4 may be adjusted to atmospheric pressure. After the substrate 100 is loaded, the internal pressure of the load lock chamber 4 may be adjusted to vacuum. To this end, a pressure control unit (not shown) may be coupled to the load lock chamber 4 . The supply unit supplies the substrate 100 to the load lock chamber 4 .

Although not shown, the load-lock chamber 4 may include a load-lock support for supporting the substrate 100 . The load-lock support portion may be coupled to the chamber body 40 of the load-lock chamber 4 . The chamber body 40 forms the overall appearance of the load lock chamber 4 . The load lock support part may be disposed inside the chamber body 40 . When the substrate 100 is supported by the load-lock support, the substrate 100 may be disposed at the load-lock position 4a. With the substrate 100 positioned at the load lock position 4a, an operation of adjusting the internal pressure of the chamber body 40 between vacuum and atmospheric pressure may be performed.

The load lock chamber 4 may heat an edge of the substrate 100 . In this case, in the substrate processing system 1 according to the present invention, after the load lock chamber 4 first heats the edge 120 of the substrate 100, the heating chamber 3 heats the substrate 100 It can be implemented to secondarily heat the center 110 of. Therefore, the substrate processing system 1 according to the present invention reduces the temperature deviation between the edge 120 of the substrate and the center 110 of the substrate 100, thereby more smoothly removing the residual fluid from the substrate 100. can be ejected. Accordingly, the substrate processing system 1 according to the present invention can further improve the quality of the substrate on which the processing process has been performed.

The load lock chamber 4 may include an upper heater 41 .

The upper heater 41 heats the substrate 100 . The upper heater 41 may be coupled to the chamber body 40 . With the substrate 100 positioned inside the load lock chamber 4 , the upper heater 41 may heat the upper edge 121 of the substrate 100 . The upper surface edge 121 may refer to a portion located on the upper surface of the substrate 100 among the edges 120 of the substrate 100 . The upper heater 41 may discharge the residual fluid from the upper edge 121 by heating the upper edge 121 .

Accordingly, the substrate processing system 1 according to the present invention can reduce the discharge amount of the residual fluid discharged from the upper surface edge 121 in the process chamber 2, thereby improving the quality of the substrate on which the processing process has been performed. can improve In addition, in the substrate processing system 1 according to the present invention, the load lock chamber 4 heats the upper surface edge 121, and the heating chamber 3 heats the center 110 of the upper surface of the substrate 100 It can be implemented to heat. Therefore, the substrate processing system 1 according to the present invention reduces the temperature deviation between the upper surface edge 121 and the upper surface center 110 of the substrate 100, thereby more smoothly removing the remaining fluid from the substrate 100. can be ejected.

The upper heater 41 may be spaced outwardly from the substrate 100 located at the load lock position 4a (shown in FIG. 5) and coupled to the chamber body 40 at a position spaced upward. there is. Accordingly, since the upper heater 41 may be disposed toward the upper edge 121 , the efficiency of heating the upper edge 121 may be improved. The upper heater 41 may be coupled to an inner surface of a side wall of the chamber body 40 .

The upper heater 41 may emit heating light toward the upper edge 121 to heat the upper edge 121 and discharge the residual gas. The upper heater 41 may heat the upper surface edge 121 by using a lamp heater emitting heating light. In the case of using the lamp heater, the upper heater 41 can heat the upper surface edge 121 in a short time after restarting from the operation stop state, so that the residual fluid is discharged from the upper surface edge 121 You can shorten the time it takes to do it.

The load lock chamber 4 may include a plurality of upper heaters 41 . The upper heaters 41, 41', 41", and 41''' may heat the edges 120 to which different sides of the substrate 100 belong. Accordingly, the load lock Since the chamber 4 can discharge the residual fluid by heating the entire edges 120 of the substrate 100, it can contribute to further improving the quality of the substrate on which the processing process has been performed. The heaters 41, 41', 41", and 41''' may heat the top edges 121 to which different sides of the substrate 100 belong.

The upper heaters 41, 41', 41", and 41''' may be disposed in different directions with respect to the substrate 100 located at the load lock position 4a. In this case, The upper heaters 41, 41', 41", and 41''' may be coupled to inner surfaces of different sidewalls of the chamber body 40.

For example, one of the upper heaters 41 among the upper heaters 41, 41', 41", and 41''' has a first inlet/output 40a formed among sidewalls of the chamber body 40. It may be coupled to an inner surface of the first side wall. In a state where the substrate 100 is located in the load-lock position 4a, the upper heater 41 is located on the upper surface edge 121 of which the side of the substrate 100 toward the first inlet/output 40a belongs. ) can be heated.

For example, the other upper heater 41' among the upper heaters 41, 41', 41", and 41''' has a second inlet/output 40b among the sidewalls of the chamber body 40. It may be coupled to the inner surface of the formed second sidewall.The second access part 40b is for the substrate 100 to enter and exit. In a state where the substrate 100 is positioned in the load-lock position 4a, the upper heater 41' is directed toward the second entrance 40b of the substrate 100. The upper surface edge 121' to which the side belongs may be heated.

For example, the other upper heater 41" among the upper heaters 41, 41', 41", and 41''' is the inner surface of the third sidewall coupled to the first sidewall and the second sidewall, respectively. can be coupled to Among the upper heaters 41, 41', 41", and 41''', another upper heater 41''' is an inner surface of a fourth side wall disposed to face the third side wall. can be coupled to

The number of upper heaters 41 and the number of sides of the substrate 100 may be the same. 6 shows that the substrate 100 is formed in a rectangular plate shape and the load lock chamber 4 includes four upper heaters 41, 41', 41", and 41'''. The number of sides of the substrate 100 and the number of upper heaters 41 may be 3 or 5 or more, respectively.

Referring to FIGS. 1 to 6 , the load lock chamber 4 may include a lower heater 42 .

The lower heater 42 heats the substrate 100 . The lower heater 42 may be coupled to the chamber body 40 . With the substrate 100 positioned inside the load lock chamber 4 , the lower heater 42 may heat the lower edge 122 of the substrate 100 . The lower edge 122 may refer to a portion located on the lower surface of the substrate 100 among the edges 120 of the substrate 100 . The lower heater 42 may discharge the residual fluid from the lower edge 122 by heating the lower edge 122 .

Accordingly, the substrate processing system 1 according to the present invention can reduce the discharge amount of the residual fluid discharged from the lower edge 122 in the process chamber 2, thereby improving the quality of the substrate on which the processing process has been performed. can improve In addition, the substrate processing system 1 according to the present invention discharges the residual fluid from the lower surface edge 122 using the lower heater 42, and uses the upper heater 41 to discharge the residual fluid from the upper surface edge 121 ) It may be implemented to discharge the residual fluid from. Accordingly, since the substrate processing system 1 according to the present invention can increase the discharge amount of the residual fluid discharged from the substrate 100 in the load lock chamber 4, the quality of the substrate on which the processing process has been performed can be improved. can be further improved. Meanwhile, in the substrate processing system 1 according to the present invention, the load lock chamber 4 heats the bottom edge 122, and the heating chamber 3 heats the center 110 of the bottom surface of the substrate 100. It can be implemented to heat. Therefore, the substrate processing system 1 according to the present invention reduces the temperature deviation between the lower surface edge 122 and the center 110 of the lower surface of the substrate 100, thereby more smoothly removing the remaining fluid from the substrate 100. can be ejected. Accordingly, the substrate processing system 1 according to the present invention can further improve the quality of the substrate on which the processing process has been performed.

The lower heater 42 may be spaced outward from the substrate 100 located at the load lock position 4a and coupled to the chamber body 40 at a position spaced downward. Accordingly, since the lower heater 42 may be disposed toward the lower edge 122 , the efficiency of heating the lower edge 122 may be improved. The lower heater 42 may be coupled to an inner surface of the chamber body 40 .

The lower heater 42 emits heating light toward the lower edge 122 to heat the lower edge 122 and discharge the residual gas. The lower heater 42 may heat the lower edge 122 using a lamp heater emitting heating light. In the case of using the lamp heater, since the lower heater 42 can heat the lower edge 122 in a short time after restarting from the operation stop state, the residual fluid is discharged from the lower edge 122 You can shorten the time it takes to do it.

The load lock chamber 4 may include a plurality of lower heaters 42 . The lower heaters 42 and 42' may heat the edges 120 to which different sides of the substrate 100 belong. Accordingly, the load lock chamber 4 can heat the entire edges 120 of the substrate 100 to discharge the residual fluid, thereby further improving the quality of the substrate on which the processing process is performed. can contribute The lower heaters 42 and 42' may heat the bottom edges 122 to which different sides of the substrate 100 belong.

The lower heaters 42 and 42' may be disposed in different directions with respect to the substrate 100 located at the load lock position 4a. In this case, the lower heaters 42 and 42' may be coupled to inner surfaces of different sidewalls of the chamber body 40.

For example, one of the lower heaters 42 among the lower heaters 42 and 42' may be coupled to an inner surface of the first sidewall. In a state where the substrate 100 is positioned in the load-lock position 4a, the lower heater 42 has a lower edge 122 to which the side of the substrate 100 that faces the first inlet/output 40a belongs. can be heated.

For example, another lower heater 42' among the lower heaters 42 and 42' may be coupled to an inner surface of the second sidewall. In a state where the substrate 100 is positioned in the load-lock position 4a, the lower heater 42' has a lower edge 122 to which the side of the substrate 100 toward the second inlet/output 40b belongs. ') can be heated.

For example, another lower heater (not shown) among the lower heaters 42 and 42' may be coupled to an inner surface of the third sidewall. Among the lower heaters 42 and 42', another lower heater (not shown) may be coupled to an inner surface of the fourth sidewall.

The number of lower heaters 42 and the number of sides of the substrate 100 may be the same. As shown in FIG. 6 , when the substrate 100 is formed in a rectangular plate shape, the load lock chamber 4 may include four lower heaters 42 . Although not shown, the number of sides of the substrate 100 and the number of lower heaters 42 may be 3 or 5 or more, respectively.

Referring to FIGS. 1 to 6 , the load lock chamber 4 may include an upper reflector 43 .

The upper reflector 43 reflects the heating light emitted from the upper heater 41 . The upper reflector 43 may reflect the heating light emitted from the upper heater 41 toward the substrate 100 . Accordingly, in the substrate processing system 1 according to the present invention, the amount of heating light used to heat the upper edge 121 among the heating lights emitted by the upper heater 41 using the upper reflector 43 can increase Therefore, since the substrate processing system 1 according to the present invention can shorten the time required to discharge the residual fluid by heating the upper surface edge 121, the yield of substrates on which the processing process has been performed can be increased. .

The upper reflector 43 may be coupled to the chamber body 40 . The upper reflector 43 may be coupled to an inner surface of a sidewall of the chamber body 40 . The upper heater 41 may be coupled to the inner surface of the side wall of the chamber body 40 through the upper reflector 43 by being coupled to the upper reflector 43 .

When the load lock chamber 4 includes a plurality of upper heaters 41 , the load lock chamber 4 may include a plurality of upper reflectors 43 . The upper reflectors 43 and 43' may reflect heating light emitted from each of the upper heaters 41 and 41' toward the upper surface edges 121 and 121'. Each of the upper heaters 41 and 41' may be coupled to the upper reflectors 43 and 43'. The load lock chamber 4 may include the same number of upper heaters 41 and upper reflectors 43 .

Referring to FIGS. 1 to 6 , the load lock chamber 4 may include a lower reflector 44 .

The lower reflector 44 reflects the heating light emitted from the lower heater 42 . The lower reflector 44 may reflect the heating light emitted from the lower heater 42 toward the substrate 100 . Accordingly, in the substrate processing system 1 according to the present invention, the amount of heating light used to heat the lower edge 122 among the heating lights emitted by the lower heater 42 using the lower reflector 44 can increase Therefore, since the substrate processing system 1 according to the present invention can shorten the time required to discharge the residual fluid by heating the lower edge 122, the yield of substrates on which the processing process has been performed can be increased. .

The lower reflector 44 may be coupled to the chamber body 40 . The lower reflector 44 may be coupled to an inner surface of a sidewall of the chamber body 40 . The lower heater 42 may be coupled to the inner surface of the sidewall of the chamber body 40 through the lower reflector 44 by being coupled to the lower reflector 44 .

When the load lock chamber 4 includes a plurality of lower heaters 42 , the load lock chamber 4 may include a plurality of lower reflectors 44 . The lower reflectors 44 and 44' may reflect the heating light emitted from each of the lower heaters 42 and 42' toward the bottom edges 122 and 122'. Each of the lower heaters 42 and 42' may be coupled to the lower reflectors 44 and 44'. The load lock chamber 4 may include the same number of lower heaters 42 and lower reflectors 44 .

Referring to FIGS. 1 to 9 , the load lock chamber 4 may include a first removal processing unit 45 .

The first removal processing unit 45 is for performing a removal processing to remove organic substances. The first removal processing unit 45 may perform the removal processing by emitting heating light toward the substrate 100 being transported to the load lock position 4a through the first entrance/exit unit 40a. . As the removal process is performed, the efficiency of the process performed in the process chamber 2 can be further improved. For example, as shown in FIG. 9, a semiconductor substrate 101, a first semiconductor layer 102 formed on the upper surface of the semiconductor substrate 101, and a second semiconductor layer 103 formed on the first semiconductor layer 102 , the third semiconductor layer 104 formed on the lower surface of the semiconductor substrate 101, the fourth semiconductor layer 105 formed under the third semiconductor layer 104, and formed on the second semiconductor layer 103 a first transparent conductive layer 106, a second transparent conductive layer 107 formed under the fourth semiconductor layer 105, a first electrode 108 formed on the first transparent conductive layer 106, and In the case of manufacturing a solar cell including the second electrode 109 formed under the second transparent conductive layer 107, the substrate processing system 1 according to the present invention performs the processing process in the process chamber 2 Through this, the first transparent conductive layer 106 may be deposited on the second semiconductor layer 103 . In this case, the first removal processing unit 45 emits heating light to the second semiconductor layer 103 to perform a removal treatment of removing organic materials from the second semiconductor layer 103, thereby removing the first transparent layer. The deposition rate of the conductive layer 106 and the film quality of the first transparent conductive layer 106 may be improved.

The first removal processing unit 45 may be coupled to the chamber body 40 . The first removal processing unit 45 may be coupled to an inner surface of an upper wall of the chamber body 40 . In this case, the first removal processing unit 45 may be disposed above the substrate 100 transferred to the load lock position 4a through the first entrance and exit unit 40a. The first removal processing unit 45 may heat the substrate 100 using a lamp heater emitting heating light.

The first removal processing unit 45 may emit heating light toward the first removal processing region 45a (shown in FIG. 7 ). The first removal processing area 45a may be disposed between the first inlet/output part 40a and the load lock position 4a. The first removal processing region 45a may have a length longer than the width direction of the substrate 100 and may have a length shorter than the length direction of the substrate 100 . Referring to FIG. 7 , the width direction of the substrate 100 may be a vertical direction, and the length direction of the substrate 100 may be a horizontal direction. Accordingly, in the process of transferring the substrate 100 from the first entry/exit portion 40a to the load-lock position 4a, the first removal processing region 45a is sequentially removed for each portion of the substrate 100. , so that the entire substrate 100 passes through the first removal processing region 45a. Accordingly, even if the first removal processing unit 45 is implemented to emit heating light to the first removal processing region 45a shorter than the longitudinal direction of the substrate 100, the entire substrate 100 is heated. Thus, the removal process can be performed.

The first removal processor 45 may stop emitting heating light when the substrate 100 is positioned at the load lock position 4a. After that, the upper heater 41 may start heating the upper surface edge 121 . In this way, the substrate processing system 1 according to the present invention is implemented to prevent non-uniform heating of the upper surface edge 121 due to the heating light of the first removal processing unit 45 . Therefore, the substrate processing system 1 according to the present invention can heat the upper surface edge 121 at a more uniform temperature as a whole. Meanwhile, when the substrate 100 is positioned at the load lock position 4a, the upper heater 41 may start heating the upper surface edge 121. When the inside of the load lock chamber 4 is converted to a vacuum, the upper heater 41 may start heating the upper surface edge 121 . When the heating of the upper surface edge 121 is completed, the upper heater 41 may stop emitting heating light. After that, when another substrate 100 starts being loaded through the first entrance/exit unit 40a, the first removal unit 45 can resume emitting heating light.

The load lock chamber 4 may include a plurality of first removal processing units 45 . The first removal processing units 45 may be spaced apart from each other along the transfer direction of the substrate 100 transferred to the load lock position 4a through the first inlet/output unit 40a. Therefore, the substrate processing system 1 according to the present invention increases the heating time of the substrate 100 by the heating light emitted by the first removal processing units 45, so that the substrate 100 on which the removal treatment has been performed ) can further improve the quality.

Referring to FIGS. 1 to 9 , the load lock chamber 4 may include a second removal processing unit 46 .

The second removal processing unit 46 is for performing a removal processing to remove organic substances. The second removal processing unit 46 may perform the removal processing by emitting heating light toward the substrate 100 being transported from the load lock position 4a toward the second entrance and exit portion 40b. As the removal process is performed, the efficiency of the process performed in the process chamber 2 can be further improved. For example, when the process chamber 2 performs a process of depositing the first transparent conductive layer 106 on the second semiconductor layer 103 to manufacture a solar cell as shown in FIG. 9 . , The second removal processor 46 may perform a removal process of removing organic materials from the second semiconductor layer 103 by emitting heating light to the second semiconductor layer 103 .

The second removal processing unit 46 may be coupled to the chamber body 40 . The second removal processing unit 46 may be coupled to an inner surface of an upper wall of the chamber body 40 . In this case, the second removal processing part 46 may be disposed above the substrate 100 being transferred from the load lock position 4a toward the second entrance part 40b. The second removal processing unit 46 may heat the substrate 100 using a lamp heater emitting heating light.

The second removal processing unit 46 may emit heating light toward the second removal processing region 46a (shown in FIG. 8). The second removal processing area 46a may be disposed between the load lock position 4a and the second entry/exit portion 40b. The second removal processing region 46a may have a length longer than the width direction of the substrate 100 and may have a length shorter than the length direction of the substrate 100 . Referring to FIG. 8 , the width direction of the substrate 100 may be a vertical direction, and the length direction of the substrate 100 may be a horizontal direction. Accordingly, in the process of transferring the substrate 100 from the load lock position 4a toward the second entrance/exit portion 40b, the second removal processing region 46a is sequentially moved for each portion of the substrate 100. , so that the entire substrate 100 passes through the second removal processing region 46a. Accordingly, even if the second removal processing unit 46 is implemented to emit heating light to the second removal processing region 46a shorter than the longitudinal direction of the substrate 100, the entire substrate 100 is heated. Thus, the removal process can be performed.

The second removal processor 46 may stop emitting heating light while the upper heater 41 heats the upper surface edge 121 . After that, when the transfer for the unloading of the substrate 100 positioned at the load lock position 4a starts, the second removal processing unit 46 may start emitting heating light. In this way, the substrate processing system 1 according to the present invention is implemented to prevent non-uniform heating of the upper surface edge 121 due to the heating light of the second removal processing unit 46 . Therefore, the substrate processing system 1 according to the present invention can heat the upper surface edge 121 at a more uniform temperature as a whole.

The load lock chamber 4 may include a plurality of second removal processing units 46 . The second removal processing units 46 may be spaced apart from each other along the transfer direction of the substrate 100 being transferred from the load lock position 4a toward the second entrance/exit unit 40b. Therefore, the substrate processing system 1 according to the present invention increases the time during which the substrate 100 is heated by the heating light emitted from the second removal processing units 46, thereby removing the substrate 100 from which the removal processing has been performed. ) can further improve the quality.

Hereinafter, an embodiment of a substrate processing method according to the present invention will be described in detail with reference to the accompanying drawings.

Referring to FIGS. 1 to 11 , the substrate processing method according to the present invention performs a processing process on the substrate 100 . The substrate processing method according to the present invention may perform a deposition process of depositing a thin film on the substrate 100 and an etching process of removing a part of the thin film deposited on the substrate 100 . The substrate processing method according to the present invention can be performed by the above-described substrate processing system 1 according to the present invention. The substrate processing method according to the present invention may include the following steps.

First, the edge 120 of the substrate 100 brought into the load lock chamber 4 is primarily heated (S10). This step (S10) may be performed by the heaters 41 and 42 included in the load lock chamber 4. In the step of first heating the edge of the substrate (S10), when the substrate 100 is brought into the chamber body 40 and positioned at the load lock position 4a, the edge 120 of the substrate 100 ) by heating.

Next, when the substrate 100 is transferred from the load lock chamber 4 to the heating chamber 3, the edge 120 heats the center 110 of the firstly heated substrate 100 secondarily ( S20). This step (S20) may be performed by the heater 31 of the heating chamber 3. Through the step of first heating the edge of the substrate (S10) and the step of secondarily heating the center of the substrate (S20), the substrate processing method according to the present invention is the edge 120 of the substrate 100 and the A temperature deviation between the centers 110 of the substrate 100 may be reduced. Accordingly, the substrate processing method according to the present invention can more smoothly discharge the residual fluid from the substrate 100 .

Next, when the substrate 100 is brought into the process chamber 2 from the heating chamber 3, the edge 120 is heated first and the center 110 is heated secondarily to the substrate 100. A treatment process is performed for (S30). This step (S30) may be performed by the process chamber 2. The process chamber 2 may perform a deposition process and an etching process on the substrate 100 . Since the processing process is performed in a state in which residual fluid is smoothly discharged from the substrate 100 through the first heating of the edge of the substrate (S10) and the second heating of the center of the substrate (S20), , The substrate processing method according to the present invention can further improve the quality of the substrate 100 on which the processing process has been performed. Meanwhile, carrying in and out of the heating chamber 3 , the load lock chamber 4 , and the process chamber 2 , respectively, the substrate 100 may be performed by the transfer unit 10 .

Here, the step of primarily heating the edge of the substrate (S10) may include heating the upper edge of the substrate (S11) and heating the lower edge of the substrate (S12).

The step of heating the top edge of the substrate ( S11 ) may be performed by heating the top edge 121 of the substrate 100 located in the load lock chamber 4 . Heating the top edge of the substrate ( S11 ) may be performed by emitting heating light toward the top edge 121 of the substrate 100 from the top heater 41 .

The step of heating the lower edge of the substrate ( S12 ) may be performed by heating the lower edge 122 of the substrate 100 located in the load lock chamber 4 . Heating the lower edge of the substrate ( S12 ) may be performed by emitting heating light toward the lower edge 122 of the substrate 100 from the lower heater 42 .

As described above, the substrate processing method according to the present invention is implemented to heat both the lower surface edge 122 and the upper surface edge 121, thereby reducing residual fluid discharged from the substrate 100 in the load lock chamber 4. emissions can be further increased. Accordingly, the substrate processing method according to the present invention can further reduce the amount of residual fluid discharged from the substrate 100 when the processing step (S30) of the substrate is performed. Therefore, the substrate processing method according to the present invention can further improve the quality of the substrate on which the processing process has been performed. Heating the lower edge of the substrate (S12) and heating the upper edge of the substrate (S11) may be performed simultaneously. Therefore, the substrate processing method according to the present invention can shorten the time required to discharge the residual fluid from the lower edge 122 and the upper edge 121, thereby increasing the productivity of the substrate 100 on which the processing process has been performed. can increase

Here, in the step of secondary heating the center of the substrate (S20), when the center 110 of the substrate 100 is heated, the edge 120 of the substrate 100 may also be heated. Accordingly, in the substrate processing method according to the present invention, the discharge amount of the residual fluid discharged from the substrate 100 in the heating chamber 3 can be further increased.

Here, the substrate processing method according to the present invention may include removing the organic material (S40).

The removing of the organic material (S40) may be performed before the first heating of the edge of the substrate (S10) is performed. The step of removing the organic material ( S40 ) may be performed by emitting heating light toward the substrate 100 carried into the load lock chamber 4 . Since the organic material is removed from the substrate 100 through this, the substrate processing method according to the present invention can further improve the efficiency of the processing process performed through the step (S30) of performing the processing process on the substrate. The step of removing the organic material (S40) may be performed by the first removal processor 45 included in the load lock chamber 4.

In the step of removing the organic material (S40), emission of the heating light may be stopped when the substrate 100 is positioned at the load lock position 4a. Thereafter, when the substrate 100 is positioned at the load lock position 4a or the inside of the load lock chamber 4 is converted to vacuum, the step of first heating the edge of the substrate (S10) is the substrate The primary heating of the edge 120 of (100) may be started. As described above, in the substrate processing method according to the present invention, the heating of the edge 120 in the step of first heating the edge of the substrate due to the heating light in the step of removing the organic material (S40) (S10) It is implemented to prevent non-uniformity. Therefore, the substrate processing method according to the present invention can heat the edge 120 at a more uniform temperature as a whole.

Here, the substrate processing method according to the present invention may include removing the organic material (S50).

The removing of the organic material (S50) may be performed after the first heating of the edge of the substrate (S10) is performed. The removing of the organic material ( S50 ) may be performed by emitting heating light toward the substrate 100 carried out to the load lock chamber 4 . Since the organic material is removed from the substrate 100 through this, the substrate processing method according to the present invention can further improve the efficiency of the processing process performed through the step (S30) of performing the processing process on the substrate. The step of removing the organic material ( S50 ) may be performed by the second removal processor 46 of the load lock chamber 4 .

In the step of removing the organic material (S50), emission of the heating light may be stopped while the step of primarily heating the edge of the substrate (S10) is performed. Thereafter, when the transport of the substrate 100 positioned at the load lock position 4a starts, the step of removing the organic material (S50) may start emitting heating light. As described above, in the substrate processing method according to the present invention, the heating of the edge 120 in the step of firstly heating the edge of the substrate due to the heating light in the step of removing the organic material (S50) (S10) It is implemented to prevent non-uniformity. Therefore, the substrate processing method according to the present invention can heat the edge 120 at a more uniform temperature as a whole.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which the present invention belongs that various substitutions, modifications, and changes are possible without departing from the technical spirit of the present invention. It will be clear to those who have knowledge of

1: substrate processing system 2: process chamber
21: substrate support unit 22: processing unit
3: heating chamber 31: heater
4: load lock chamber 4a: load lock position
40: chamber body 40a: first entrance
40b: second entrance 41: upper heater
42: lower heater 43: upper reflector
44: lower reflection part 45: first removal processing part
45a: first removal processing area 46: second removal processing unit
46a: second removal processing area 100: substrate
110: center 120: edge
121: top edge 122: bottom edge

Claims (16)

A process chamber for performing a processing process on the substrate;
a load lock chamber for primarily heating an edge of the substrate; and
A heating chamber positioned between the process chamber and the load lock chamber and secondarily heating the center of the substrate whose edge is primarily heated;
The load lock chamber,
a first entry/exit portion through which the substrate enters/exit; and
and a first removal processing unit for removing organic materials by emitting heating light toward the substrate carried into the load lock chamber through the first entrance and exiting unit. The method of claim 1, wherein the load lock chamber
one or a plurality of upper heaters configured to heat an upper surface edge of the substrate on the upper side of the substrate; and
A substrate processing system comprising one or a plurality of lower heaters for heating an edge of a lower surface of the substrate at a lower side of the substrate. According to claim 1,
The substrate processing system of claim 1 , wherein the heating chamber includes one or a plurality of heaters for heating the entire substrate transported from the load lock chamber. According to claim 2,
The upper heater and the lower heater heat an edge to which different sides of the substrate belong. The method of claim 1, wherein the load lock chamber
an upper heater emitting heating light from an upper side of the substrate toward an upper edge of the substrate; and
and an upper reflector for reflecting the heating light emitted from the upper heater toward the substrate. According to claim 1,
The load lock chamber includes an upper heater for heating the top edge of the substrate and a load lock support for supporting the substrate,
The substrate processing system according to claim 1 , wherein the upper heater is spaced outwardly from the substrate supported by the load-lock support and is disposed at a position spaced upward to emit heating light toward the edge of the upper surface. According to claim 1,
The load lock chamber includes a plurality of first removal processing units,
The substrate processing system of claim 1 , wherein the first removal processing units are spaced apart from each other along a transfer direction of the substrate carried into the load lock chamber through the first entrance and exit unit. According to claim 1,
The substrate processing system according to claim 1 , wherein the first removal processing unit emits heating light toward a first removal processing region through which the entirety of the substrate passes. According to claim 1,
The load lock chamber includes an upper heater for heating the top edge of the substrate and a load lock support for supporting the substrate,
The first removal processing unit stops emitting heating light when the substrate is supported by the load-lock support unit,
The upper heater starts heating the upper surface edge when the substrate is supported by the load lock support part, or starts heating the upper surface edge when the inside of the load lock chamber is converted to a vacuum. processing system. According to claim 1,
The load lock chamber,
a second entrance for the board to enter and exit; and
A second removal processing unit for removing organic materials by emitting heating light toward the substrate transported toward the second entrance and exiting unit to be taken out of the load lock chamber;
The substrate processing system according to claim 1 , wherein the second removal processing unit emits heating light toward a second removal processing region through which the entirety of the substrate passes. emitting heating light toward the substrate carried into the load lock chamber to remove organic materials;
firstly heating an edge of the substrate brought into the load lock chamber;
when the substrate is transferred from the load lock chamber to the heating chamber, secondarily heating the center of the substrate whose edges are primarily heated; and
When the substrate is transferred from the heating chamber to the process chamber, performing a processing process on the substrate with the first heating at the edge and the second heating at the center;
The substrate processing method, characterized in that the step of removing the organic material is performed before the step of primary heating the edge of the substrate is performed. According to claim 11,
The step of primarily heating the edge of the substrate includes heating the top edge of the substrate and heating the bottom edge of the substrate,
The step of heating the upper surface edge of the substrate and the step of heating the lower surface edge of the substrate are performed simultaneously. According to claim 11,
In the step of secondary heating the center of the substrate, when the center of the substrate is secondaryly heated, the edge of the substrate is also heated. According to claim 11,
The step of primarily heating the edge of the substrate includes heating the upper edge of the substrate supported by the load-lock support,
The step of heating the upper surface edge of the substrate may be performed by using heating light emitted toward the upper surface edge from an upper heater disposed at a position spaced outwardly and spaced upward from the substrate supported by the load-lock support unit. A substrate processing method characterized by heating the edge. According to claim 11,
In the step of removing the organic material, emission of heating light is stopped when the substrate is supported by the load-lock support,
The step of primary heating the edge of the substrate starts the primary heating of the edge of the substrate when the substrate is supported by the load-lock support or when the inside of the load-lock chamber is converted to vacuum Substrate, characterized in that processing method. According to claim 11,
and emitting heating light toward the substrate carried out from the load lock chamber to remove organic materials after the step of firstly heating the edge of the substrate.

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