JPS61129820A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To form efficiently a thin film with an uniform thickness on a large area substrate, by arraying in parallel a plural of arc line shaped lamps in the direction of the reaction chamber axis, with upward convex formed perpendicular to the reaction chamber axis. CONSTITUTION:Reaction gas 7 introduced into a quartz glass tube 1 is excited and decomposed by irradiating light from a light source 12, and the resulted products are deposited on a substrate 4 to form a thin film thereon. In this case, the light is irradiated from a plural of line shaped lamps 12a arrayed in parallel and axially of the tube 1, so that longitudinal illumination on the substrate 4 can be uniformed wholly at the both ends and center. Since each lamp 12a has an upward convex arc shape perpendicular to the glass tube axis, the both ends of the lamp 12a which have a smaller light quantity are nearer to the substrate 4. Thus the smaller light quantity can be compensated with the nearer distance, so that illumination perpendicular to the tube axis on the substrate 4 can be uniformed. As the result, on the entire surface of the substrate 4, a thin film with an uniform film thickness can be formed.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and in particular to optically pumped CV
D (photo chemical vapor
The present invention relates to an apparatus for forming a thin film using a deposition method.

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit devices, but in the conventional CVD method, the reaction gas is mainly heated to cause a chemical reaction, which results in a high reaction temperature. W formed by
iIll[ is susceptible to damage.

Therefore, recently, the photo-excited CVD method has been attracting attention as a low-temperature (/D) technology. This photo-excited CVD method uses light as the energy source for CVD, and according to this,
Compared to conventional thermally excited CVD methods, plasma CVD methods, etc., the reaction temperature can be lowered and damage to the thin film can be reduced.

In general, in the photo-excited CVD method, it is known that the illuminance of the light on the substrate has a large effect on the thin film formation rate; for example, the substrate temperature, reactant gas composition ratio, and pressure are kept constant. Under these conditions, the rate of formation of the Wi film increases in proportion to the illuminance.

FIGS. 3 and 4 show the basic configuration of a conventional semiconductor manufacturing apparatus using such a photo-excited CVD method.
In the figure, reference numeral 1 denotes a quartz glass tube serving as a reaction chamber, which is cylindrical and whose both ends are closed by side walls 3 of the reaction chamber. 10 and 11 are a reaction gas supply port for supplying the reaction gas 7 and curtain gas 8 into the reaction chamber, a curtain gas supply port, and a gas discharge port for discharging the exhaust gas 9, respectively. 2 is a light source consisting of a plurality of linear lamps 2a, and these linear lamps 2a are arranged in parallel on the outside of the quartz glass tube in the axial direction of the glass tube 1 and along the outer surface of the glass tube 1. It is located. 6 is a susceptor for mounting the substrate 4, and 5 is an infrared lamp for heating the substrate 4.

In this conventional device, when the reaction gas and curtain gas 8 are introduced into the quartz glass tube 1, the curtain gas 8 flows to cover the upper inner surface of the quartz glass tube 1, and the reaction gas 7 flows into the light source 2. The reaction products generated thereby are deposited on the substrate 4 heated at a low temperature by the infrared lamp '5, and as a result, a thin film is formed on the substrate 4, and the gas 9 after the reaction is It is discharged from the discharge port 13.

[Problem that the invention seeks to solve]

By the way, in the above-mentioned conventional device, a plurality of linear lamps 2a are arranged as the light source 2 in the axial direction of the quartz glass tube 1, but due to its structure, the amount of light emitted from both ends of the linear lamps 2a is limited. Therefore, the lamp 2a of the substrate 4
The illuminance at both ends of the substrate 4 in the axial direction is weaker than that at the center. Therefore, in this conventional device, the film formation rate at both ends of the substrate 4 is slower than that at the center, resulting in a thinner film. There is a problem of uniformity, and on the other hand, linear lamp 2
If only the central part of a is used as a light source, the illuminance will be uniform, but if this is done, only small substrates can be manufactured, and manufacturing efficiency will deteriorate.

In addition, in the conventional device described above, since the linear lamps 2a are arranged in parallel along the outer surface of the glass tube 1, it is easy to make the illumination distribution in the direction perpendicular to the glass tube axis of the substrate 4 uniform. It is difficult to arrange them in an arc shape.

The present invention has been made in view of the above-mentioned conventional problems.
It is an object of the present invention to provide a semiconductor manufacturing apparatus that can efficiently form a thin film of uniform thickness on a large area substrate.

[Means for solving problems]

The present invention provides a semiconductor manufacturing apparatus in which a plurality of arc-shaped linear lamps are arranged on the outside of a quartz glass tube, which is a reaction chamber, so as to convex upwardly and in a direction perpendicular to the axis of the quartz glass tube. They are arranged in parallel in the axial direction.

(Function) In the present invention, the light to the substrate is irradiated from a plurality of linear lamps arranged in parallel in the axial direction of the quartz glass tube, so that the illuminance distribution in the axial direction on the substrate is The light intensity is uniform across both ends and the center, and each of the linear lamps has an arc shape and is convex upward in a direction perpendicular to the tube axis. As a result, the illuminance distribution in the direction perpendicular to the axis on the substrate becomes uniform across both ends and the center of the substrate in the direction perpendicular to the axis, and as a result, the illuminance becomes uniform over the entire surface of the substrate, and as a result, the entire surface of the substrate has the same thickness. A thin film is formed.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

1 and 2 show one embodiment of the present invention.

In the figure, the same reference numerals as in FIGS. 3 and 4 indicate the same or equivalent parts, and 12 is five linear lamps arranged in parallel in the axial direction of the glass tube 1 on the outside of the quartz glass tube 1. 12
Each linear lamp 12a is arc-shaped, convex upward on the outside of the quartz glass tube 1, and oriented in a direction perpendicular to the axis of the quartz glass tube 1.

Next, the effects will be explained.

In the apparatus of this embodiment, as in the conventional apparatus, the reaction gas 7 introduced into the quartz glass tube 1 is irradiated with light from the light source 12 and is excited and decomposed, and the resulting reaction products are deposited on the substrate 4. A thin film is then formed on the substrate 4.

At this time, in this embodiment, light is irradiated from five single linear lamps 12a arranged in parallel in the axial direction of the quartz glass tube 1, that is, in the longitudinal direction of the substrate 4. The illuminance in the direction is uniform at both ends and the center, and since each of the linear lamps 12a has an upwardly convex arc shape facing perpendicular to the glass tube axis, the lamp 12a
Both ends where the amount of light is low are close to the substrate 4, and the short distance is compensated for by the short distance, so that the illuminance on the substrate 4 in the direction perpendicular to the tube axis is also uniform, As a result, a thin film having a uniform thickness is formed over the entire surface of the substrate 4.

In this way, in this embodiment, the light source 1 is placed on the entire surface of the substrate 4.
The illuminance from 2 becomes uniform, and as a result, the uniformity of the film thickness can be improved. Also, as the amount of light becomes uniform in the longitudinal direction of the substrate 4, a thin film can be formed on a large area of the substrate, and manufacturing efficiency can be improved.

In the above embodiment, the light source 12 includes five linear lamps 1.
2a, the number of linear lamps 12a is appropriately selected depending on the size of the substrate to be processed. Furthermore, in the above embodiment, a case has been described in which the linear lamps 12a are arranged in parallel at the same interval, but in the present invention, the arrangement interval does not necessarily have to be the same; for example, the center may be widened; By doing so, the illuminance distribution on the substrate can be made even more uniform.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention,
A plurality of arc-shaped linear lamps are arranged in parallel in a direction perpendicular to the axis of the quartz glass tube so as to convex upward, so that the illuminance distribution of light on the substrate is uniform and the film thickness can be reduced. This has the effect of making it uniform and improving the precision of the semiconductor, and also allows forming a thin film on a large area substrate, which has the effect of improving manufacturing efficiency.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional side view of a semiconductor manufacturing device according to an embodiment of the present invention, FIG. 2 is a cross-sectional front view thereof, FIG. 3 is a cross-sectional side view of a conventional semiconductor manufacturing device, and FIG. 4 is a cross-sectional front view thereof. It is. DESCRIPTION OF SYMBOLS 1... Quartz glass tube, 4... Substrate, 7... Reaction gas, 12... Light source, 12a... Linear lamp.

Claims (1)

[Claims] (1) In a semiconductor manufacturing device that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, the reaction chamber is connected to a quartz glass tube. The light source consists of a plurality of arc-shaped linear lamps arranged in parallel in the axial direction of the quartz glass tube on the outside of the quartz glass tube, and each of the linear lamps is convex upward and extends beyond the quartz glass tube. Semiconductor manufacturing equipment characterized by being oriented in a direction perpendicular to the axis.