JPS61131428A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To contrive to improve the efficiency of work by a method wherein a light source that plural linear lamps are incorporated in the interior of the quartz glass tube is provided in the reaction chamber and a reflecting mirror which also serves as a shutter is provided in the interior of the quartz glass tube. CONSTITUTION:A light source that plural linear lamps are arranged in the interior of a cylindrical quartz glass tube 13 is used as this light source. By providing this light source 12 in a reaction chamber 1, the light source 12 is made to get near a substrate 5 to an arbitrary distance and the illuminance of light on the substrate 5 can be raised. Moreover, after the formation of a thin film on the substrate 5, the light from the light source 12 is shielded in such a way as to be able to shield by lowing a shutter 10. Accordingly, the reaction gas remaining is decomposed and the reaction product can be prevented from depositing by adhesion on the surface of the quartz glass tube 13 and the substrate 5 can be replaced leaving the linear lamps intact being lighted. As a result, the improvement of the efficiency of work can be contrived.

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention is a method of photochemically decomposing a reactive gas to form a thin film on a substrate (photo che+++1ca
The present invention relates to a semiconductor manufacturing apparatus that forms a thin film using vapor deposition (hereinafter referred to as photo-excited CVD method).

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit devices, but the conventional CVD method mainly involves heating a reaction gas to cause a chemical reaction.
As a result, the reaction temperature becomes high, and the thin film formed is thereby damaged.

It's easy.

Therefore, recently, a photo-excited CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as the CVD energy source, and according to this method,
Compared to conventional thermally excited CVD methods, plasma CVD methods, etc., the reaction temperature can be lowered and damage to thin films can be reduced.

In general, in photo-excited CVD, it is known that the intensity of light has a large effect on the rate of thin film formation. It is known that the formation speed of is increased in proportion to the intensity of light irradiation.

Figure 3 shows the conventional a! The basic configuration of the film forming apparatus is shown. In the figure, 1 is a reaction chamber whose inside is reduced to a high vacuum state during film formation, 2 is a light source consisting of a linear lamp, 3 is a heater for heating the substrate, and 4 is a A reactive gas such as silane, 5 a substrate on which a thin film is formed, 6 a light entrance window made of a light-transmitting material, 7 a reactive gas supply port, 8 a gas discharge port for discharging the gas 4a after the reaction, 9 is a fixed stand on which the board 5 is placed.

Note that the interior of the reaction chamber 1 is generally reduced to a high vacuum state, and the walls of the reaction chamber 1 and the light entrance window 6 made of a light-transmitting material are naturally constructed with a structure and plate thickness that can withstand this pressure.

In this apparatus, when a reaction gas 4 is introduced into the reaction chamber 1 from the supply lower, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction product is deposited on the substrate 5 heated at a low temperature by the heater 3, and a thin film is formed on the substrate 5. Gas after reaction 4
a is discharged from the discharge port 8.

[Problem that the invention seeks to solve]

In this conventional semiconductor manufacturing apparatus, the light entrance window 6 is provided in the reaction chamber 1 as described above, and light is projected from the light source 2 provided outside the reaction chamber 1. In order to speed up the formation speed, it is necessary to increase the illuminance of the light on the substrate 5, and for this purpose, a light source with higher output may be used, or
It is necessary to shorten the distance between the substrate 5 and the light source 2 and increase the illuminance on the substrate 5. However, it is currently difficult to find a practical light source with a long life and high output, and it is also possible to shorten the distance between the substrate 5 and the light source 2 with the conventional structure by using a light-transmitting material between them. This was extremely difficult since the light entrance window 6 had to be installed in the reaction chamber 1 with a structure that could withstand high vacuum pressure.

In addition, when the ultraviolet lamp 2 is turned on, there is a problem that reaction products are deposited on the inner wall of the reaction chamber 1- or on the light entrance window 6. 2 must be turned OFF, and then turned ON again.
If you do so, it will take time for the irradiation intensity to stabilize, etc.
There was a problem with poor work efficiency.

This invention was made to solve these problems, and aims to provide a semiconductor manufacturing device that can increase the illuminance of light on a substrate and further improve work efficiency. That is.

[Means for solving problems]

The semiconductor manufacturing apparatus according to the present invention is provided with a shutter that also serves as a reflection mirror for shielding the interior of the reaction chamber and is movable along the wall of the quartz glass tube.

[Effect]

In this invention, a light source made of a quartz glass tube is provided in the reaction chamber, and the quartz glass tube is provided with a shutter that also serves as a reflector, so that the illuminance of the light on the substrate is constantly increased and a thin film can be formed quickly. Furthermore, after the thin film formation is completed, the light from the light source is blocked by a shutter, so the substrate can be replaced while the linear lamp remains lit, improving work efficiency.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along line nn in FIG. In both figures, 1 is a reaction chamber, 13 is a cylindrical quartz glass tube provided in the reaction chamber 1, and 12 is a light source including a plurality of linear lamps arranged along the inner wall of the quartz glass tube 13. , 10 is a rotary shutter that also serves as a reflector and is movably provided along the inner wall of the quartz glass tube 13, and is positioned on the non-substrate side, that is, on the upper part of the inner wall during thin film formation. This is a reflecting/shielding member that functions as a reflecting mirror to reflect ultraviolet rays from the substrate, and is located on the substrate side, that is, at the bottom, when not formed, to block light from reaching the reaction gas 4. This part is made of aluminum plate polished to a mirror finish. 14 is a shutter drive mechanism that drives the shank 10, 3 is a heater for heating the substrate, 4 is a reaction gas, 5 is a substrate, 7 is a reaction gas supply port, and 8 is a gas discharge port for discharging the gas 4a after the reaction. , 9 is a table on which the substrate 5 is placed, 11 is a reaction gas supply nozzle provided at one end of the curved surface side of the cylindrical quartz glass tube 13, and 21 is a reaction gas supply nozzle provided on the curved surface side of the cylindrical quartz glass tube 13. This is a gas exhaust nozzle provided on the opposite side to the nozzle 11.

Next, the effects will be explained.

In this device, the reaction gas 4 is supplied from the supply lower to the reaction chamber 1.
On the other hand, light is projected from a cylindrical quartz glass tube 13 serving as a light source 12 to cause a photochemical reaction in the reaction gas 4, and a thin film is formed on the substrate 5 heated by the heater 3. In this case, the shutter 1-0 inside the quartz glass tube 13 is located upward.

In this device, a plurality of linear lamps arranged inside a cylindrical quartz glass tube 13 is used as a light source.
Since the light source 12 was installed inside the reaction chamber l,
The illuminance of the light on the substrate 5 can be increased by bringing the light source 12 close to the substrate 5 to an arbitrary distance.Moreover, since the shutter 10 is provided in the quartz glass tube 13, the light reflected by the shutter 10 is added to increase the illuminance of the light on the substrate 5. Illuminance can be further increased. Therefore, the 11F film can be formed on the substrate 5 very quickly without increasing the output of the light source 12 more than necessary.

In addition, after the thin film is formed, the light from the light [12] can be blocked by lowering the shutter 10, so that the remaining reaction gas is decomposed and its reaction products are deposited on the surface of the quartz glass tube 13. This makes it possible to replace the board 5 while keeping the linear lamp lit, and to improve work efficiency.

Furthermore, in this embodiment, the reactive gas supply nozzle 11 and the gas discharge nozzle 21 are provided below the cylindrical quartz glass tube 13 with the cylindrical quartz glass tube 13 in between. The reaction gas 4 flows through the part where the distance between the reactant gas 4
can cause a photochemical reaction to occur quickly. Furthermore, by providing these nozzles 11 and 21, the reaction gas 4 only needs to flow over a short distance, so that the reaction gas 4 can be prevented from flowing into unnecessary parts of the reaction chamber 1. In addition, since the reactive gas can be efficiently flowed over a short distance, the concentration of the reactive gas can be made uniform, and a sufficient amount of the reactive gas can be flowed onto the substrate 5 in accordance with the speed of the photochemical reaction of the reactive gas. Thin film formation speed can be increased.

Moreover, since the linear lamps are arranged at appropriate intervals along the inner wall of the cylindrical quartz glass tube 13, the linear lamps are arranged at appropriate intervals within the cylindrical quartz glass tube 13, so that the linear lamps are arranged at appropriate intervals along the inner wall of the cylindrical quartz glass tube 13. The illuminance distribution of light can be made uniform to some extent.

[Effects of the Invention] As described above, according to the semiconductor manufacturing apparatus according to the present invention, a plurality of linear lamps incorporated in a quartz glass tube is used as a light source, the light source is provided in a reaction chamber, and the quartz glass tube is provided with the light source. Since a shutter that also serves as a reflector is installed inside the glass tube, the reflected light from this can be added to increase the illuminance of the light on the substrate and speed up the thin film formation speed. By positioning the tube so as to block light from reaching the reaction gas, it is possible to prevent excess reaction products from accumulating on the quartz glass tube, which allows the substrate to be replaced while the linear lamp remains lit continuously. This has the effect of increasing work efficiency.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line nn in FIG. 1, and FIG. 3 is a cross-sectional side view of a conventional semiconductor manufacturing apparatus. 1... Reaction chamber, 12... Light source, 4... Reaction gas,
5... Substrate, 13... Quartz glass tube, 10... Rotary shutter that also serves as a reflection mirror (reflection shielding member). Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) In a semiconductor manufacturing apparatus that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, the light source is provided in the reaction chamber. A plurality of linear lamps are arranged inside a quartz glass tube, and when the thin film is formed, the lamps are placed on the non-substrate side to reflect light to the reactant gas, and when the thin film is not formed, the linear lamps are placed on the substrate side. A semiconductor manufacturing apparatus characterized in that a reflective shielding member for shielding light from the reaction gas is movably provided along the wall of the quartz glass tube.