JPH0448720A - Surface treating method and device - Google Patents

Surface treating method and device

Info

Publication number
JPH0448720A
JPH0448720A JP15515290A JP15515290A JPH0448720A JP H0448720 A JPH0448720 A JP H0448720A JP 15515290 A JP15515290 A JP 15515290A JP 15515290 A JP15515290 A JP 15515290A JP H0448720 A JPH0448720 A JP H0448720A
Authority
JP
Japan
Prior art keywords
sheath
surface treatment
lamp
light
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15515290A
Other languages
Japanese (ja)
Inventor
Mitsuo Tokuda
徳田 光雄
Kenichi Kawasumi
川澄 建一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15515290A priority Critical patent/JPH0448720A/en
Publication of JPH0448720A publication Critical patent/JPH0448720A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a surface treating device which has a light source section having high illuminance, high performance, high reliability, a long lifetime and low cost and into which the light source section is incorporated by installing a sheath, through which light is transmitted and which is airtight or vacuum-resistant to the inside of a reaction treatment chamber, inserting the light source into the sheath and providing a means introducing a fluid into the sheath and discharging the fluid. CONSTITUTION:An ultraviolet lamp 1 is supplied with power from a lighting power supply and lit, and ultraviolet rays are radiated from a light-emitting section 1a. Since the space of the light-emitting section 1a and a sheath 2 is filled with nitrogen introduced from a gas introducing path 1c, radiated ultraviolet rays are not sucked in the space, and are transmitted through the sheath 2, an article to be treated 6 on a stage 5 in a treating chamber 4 is irradiated with ultraviolet rays, and the article 6 is surface-treated. On the other hand, a large quantity of heat are generated from the lamp 1, and the temperature of the lamp can be adjusted properly by regulating the flow rate of nitrogen gas. Since a vacuum in the treating chamber 14 need not be broken and the treating chamber 4 be exposed to atmospheric air, the deterioration, etc., of surface treatment characteristics due to the change of the state such as the adsorption, etc., of moisture and impurities on the inwall of the treating chamber 4 can be avoided in the exchange of the lamps at a time when the lifetime of the lamp expires. The down-time of the device required for exchange can be shortened largely.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体などの固体表面に光と反応ガス、洗浄
液等を供給して表面反応させ、皮膜形成。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention involves supplying light, a reactive gas, a cleaning liquid, etc. to the surface of a solid such as a semiconductor to cause a surface reaction, thereby forming a film.

エツチング、アッシング、洗浄などを行う表面処理装置
に関するものである。
This relates to surface treatment equipment that performs etching, ashing, cleaning, etc.

〔従来の技術〕[Conventional technology]

一般に半導体製造工程における光アッシングや光CVD
などの表面処理方式は、プラズマ処理方式に比べて低損
傷であり使用する装置も簡単な構成でよい等の利点が有
るため、利用範囲が増えつつある。また、精密洗浄を必
要とする産業分野でも光洗浄が実用化されつつある。
Generally, optical ashing and optical CVD in semiconductor manufacturing process
Surface treatment methods such as these have advantages such as less damage than plasma treatment methods and the equipment used requires a simpler configuration, so their range of use is increasing. Furthermore, optical cleaning is being put into practical use in industrial fields that require precision cleaning.

これらの光処理方式には、光アッシングや光洗浄のよう
なほぼ大気圧での処理も有るが、光CVDのような真空
中での処理も有る。
These optical processing methods include processing at approximately atmospheric pressure, such as optical ashing and optical cleaning, and processing in vacuum, such as photo-CVD.

光CVD装置の場合における従来例及び問題点を以下に
概説する。
Conventional examples and problems in the case of optical CVD apparatuses will be summarized below.

「特開昭62−50467号」は被処理物である基板に
対向して、前面が石英板で覆われていて内部に乱反射鏡
と光源とを備えたハウジングを設け、石英板に/h孔を
形成して反応気体を噴出させることにより、基板表面に
均一な厚さの薄膜を形成するものである。この例の場合
は、構造上、光源を真空雰囲気中に置くことになる。こ
のため石英板の厚みは数題以下に薄くできるが、この場
合、光源の性能を左右する光源の温度管理が困難になり
、性能や寿命が変動したり劣化する問題が有る。
``Unexamined Japanese Patent Publication No. 62-50467'' has a housing whose front surface is covered with a quartz plate and which is equipped with a diffused reflection mirror and a light source, facing the substrate to be processed. A thin film with a uniform thickness is formed on the surface of the substrate by forming a reaction gas and blowing out the reaction gas. In this example, the light source is placed in a vacuum atmosphere due to its structure. For this reason, the thickness of the quartz plate can be reduced to less than a few inches, but in this case, it becomes difficult to control the temperature of the light source, which affects the performance of the light source, and there is a problem that the performance and lifespan may fluctuate or deteriorate.

[特開昭63−29927号」は、光源を大気圧雰囲気
側に置き、石英板の窓を介して真空処理室内の基板表面
に照射するものである。
[Unexamined Japanese Patent Publication No. 63-29927] discloses a method in which a light source is placed on the atmospheric pressure side and irradiates the substrate surface in a vacuum processing chamber through a quartz plate window.

「特開昭62〜81020号Jは、光源の外面に反応生
成物が付着して光源からの光の透過が劣化することを防
止するために、真空処理室内に挿入した光源の外側を孔
明き透明筒状体で包囲して二重構造とし、光源の表面を
ガスシールドするようにしたものである。この例は、孔
明き透明筒状体の内部はほぼ真空雰囲気であるため、光
源は、はぼ真空処理室内部雰囲気に曝されている。
``Unexamined Japanese Patent Publication No. 62-81020 J discloses that the outside of a light source inserted into a vacuum processing chamber is perforated in order to prevent reaction products from adhering to the outside surface of the light source and deteriorating the transmission of light from the light source. The light source is surrounded by a transparent cylindrical body to form a double structure, and the surface of the light source is gas-shielded.In this example, since the inside of the perforated transparent cylindrical body is almost in a vacuum atmosphere, the light source is It is exposed to the atmosphere inside the vacuum processing chamber.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来技術のうち、特開昭62−50467号、特開
昭62−81020号等の場合は、光源として使用して
いる紫外線ランプの外側が真空となるため、以下のよう
な問題が有った。
Among the above conventional techniques, in the case of JP-A-62-50467, JP-A-62-81020, etc., the outside of the ultraviolet lamp used as a light source is in a vacuum, so there are the following problems. Ta.

l)ランプへ電力を供給するフィードスルーの気密構造
が複雑になるため、製造コストがかさみ、また信頼性も
低下しやすい。
l) The airtight structure of the feedthrough for supplying power to the lamp becomes complicated, which increases manufacturing costs and tends to reduce reliability.

2)ランプ周囲が真空雰囲気のため熱伝達が低下し、ラ
ンプの照度を左右するランプ最冷点温度の制御性が悪く
なり、照度が変動するため、反応速度が不安定になりや
すい。
2) Heat transfer is reduced due to the vacuum atmosphere around the lamp, and controllability of the temperature at the coldest point of the lamp, which affects the illuminance of the lamp, becomes poor, and the illuminance fluctuates, making the reaction speed likely to become unstable.

3)発光管の冷却が不十分になり温度が高くなるので、
ランプ寿命が短くなりやすい。
3) Cooling of the arc tube becomes insufficient and the temperature rises.
Lamp life tends to be shortened.

4)ランプ構造が複雑なので、処理プロセス中にランプ
に付着する汚れのクリーニングが難しい。
4) Due to the complicated structure of the lamp, it is difficult to clean the dirt that adheres to the lamp during the treatment process.

5)ランプ交換の都度、処理装置の真空を破る必要があ
るため装置のダウンタイムが長くなり、真空性能の劣化
による処理特性への影響も出やすい。
5) It is necessary to break the vacuum in the processing equipment each time the lamp is replaced, which increases the downtime of the equipment, and the processing characteristics are likely to be affected by deterioration of vacuum performance.

一方、特開昭63−29927号の場合、石英板の両側
の圧力差が1気圧程度になるため、強度確保上、石英板
の厚みは約15mm以上必要である。紫外線の透過率は
石英板の厚みに概ね反比例するので、このままでは透過
光量が大幅に低下し5これに従って薄膜形成速度即ち処
理速度が大幅に低下する問題が有った。
On the other hand, in the case of JP-A No. 63-29927, the pressure difference between both sides of the quartz plate is about 1 atmosphere, so the thickness of the quartz plate must be about 15 mm or more to ensure strength. Since the transmittance of ultraviolet rays is generally inversely proportional to the thickness of the quartz plate, if left as it is, the amount of transmitted light would be significantly reduced5, leading to a problem that the thin film formation speed, that is, the processing speed would be significantly reduced.

本発明の目的は、光源が真空雰囲気にあっても大気圧雰
囲気にあっても、光源部の構造が簡単で、確実なランプ
最零点温度制御ができ、十分な冷却が可能で、クリーニ
ングしやすく、ランプ交換時の真空破壊が不要であり、
しかも光の透過窓の厚みを数m以下にできる表面処理装
置を提供することにある。
The purpose of the present invention is to have a simple structure of the light source section, be able to reliably control the lamp's lowest point temperature, enable sufficient cooling, and be easy to clean, regardless of whether the light source is in a vacuum atmosphere or an atmospheric pressure atmosphere. , there is no need to break the vacuum when replacing the lamp,
Moreover, it is an object of the present invention to provide a surface treatment device that can reduce the thickness of a light transmission window to several meters or less.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的は、光を透過し、かつ反応処理室内部に対して
気密もしくは耐真空の鞘を取付け、この鞘の中に光源を
挿入し、かつ鞘の中に流体を導入排出する手段を具備す
ることにより達成される。
The above object is to provide a sheath that transmits light and is airtight or vacuum resistant to the inside of the reaction processing chamber, inserts a light source into the sheath, and includes means for introducing and discharging a fluid into the sheath. This is achieved by

〔作用〕[Effect]

表面処理装置の処理室内の被処理物の近傍に、袋状もし
くは管状の鞘を取付け、この鞘の中にランプを挿入する
。これにより処理に必要な光はランプから出て鞘を透過
して処理室内の被処理物の表面に照射される。ランプは
真空など処理室の雰囲気から隔絶されるので、ランプ電
力供給部の気密保持機構が不要となる。つまり従来の大
気圧処理用のランプとほぼ同じランプ構造でよい、鞘の
内部には気体を流してランプを冷却することによりラン
プの管壁温度の過昇を防ぎ、これによりランプの寿命劣
化が防止できる。尚、紫外線ランプの場合には、鞘を合
成石英製とし、鞘の内部に窒素を流すことにより目的が
達成できる。
A bag-shaped or tubular sheath is attached near the object to be treated in the processing chamber of the surface treatment apparatus, and a lamp is inserted into the sheath. As a result, the light necessary for processing is emitted from the lamp, passes through the sheath, and is irradiated onto the surface of the object to be processed within the processing chamber. Since the lamp is isolated from the atmosphere of the processing chamber, such as a vacuum, there is no need for an airtight maintenance mechanism for the lamp power supply section. In other words, the lamp structure can be almost the same as that of conventional lamps for atmospheric pressure processing.By cooling the lamp by flowing gas inside the sheath, the temperature of the lamp tube wall is prevented from rising excessively, and this reduces the lamp's lifespan. It can be prevented. In the case of an ultraviolet lamp, the purpose can be achieved by making the sheath made of synthetic quartz and flowing nitrogen into the inside of the sheath.

更には鞘の内部に流す気体の種類を種々変えることによ
り、処理室に照射される光の波長を制御できるので、反
応条件を変えることもでき−る。
Furthermore, by varying the type of gas flowing inside the sheath, the wavelength of the light irradiated into the processing chamber can be controlled, so the reaction conditions can also be varied.

ランプが処理室の雰囲気から隔絶されているので、ラン
プ交換時に処理室内部を大気に開放する必要が無く、大
気中の水分などの影響による処理特性の劣化が防止でき
る。
Since the lamp is isolated from the atmosphere of the processing chamber, there is no need to open the inside of the processing chamber to the atmosphere when replacing the lamp, and deterioration of processing characteristics due to the influence of moisture in the atmosphere can be prevented.

鞘は、単純な形状のため、外面が汚れた場合のクリーニ
ングを容易に行うことができる。
The simple shape of the sheath allows for easy cleaning if the outer surface becomes dirty.

〔実施例〕〔Example〕

以下、本発明の一実施例の構成を第1図、第2図、第3
図、第4図及び第5図により説明する。
The configuration of one embodiment of the present invention is shown in FIGS. 1, 2, and 3 below.
This will be explained with reference to FIGS. 4 and 5.

なお、第1図は本発明の表面処理装置のランプユニット
部の平断面図を示している。第2図は第1図のA−A断
面図を示している。第3図は第1図のランプユニット4
組を組み込んだ表面処理装置の平面図を示している。第
4図は第3図のB−B断面図を示している。第5図はラ
ンプの着脱時の様子を示している。
Note that FIG. 1 shows a plan sectional view of the lamp unit portion of the surface treatment apparatus of the present invention. FIG. 2 shows a sectional view taken along the line AA in FIG. Figure 3 shows the lamp unit 4 in Figure 1.
1 shows a top view of a surface treatment apparatus incorporating a set of FIG. 4 shows a sectional view taken along line BB in FIG. FIG. 5 shows how the lamp is attached and detached.

第1図において大半の図示を省略した処理室4に石英製
の鞘2をシール3を介して耐真空に装着している。鞘2
の内側には紫外線ランプ1の発光部1aを挿入し、ラン
プ基部1bを鞘2のフランジ部2bに密着させている。
A quartz sheath 2 is attached to a processing chamber 4, most of which is not shown in FIG. 1, through a seal 3 in a vacuum-proof manner. Scabbard 2
The light emitting part 1a of the ultraviolet lamp 1 is inserted into the inside of the holder, and the lamp base 1b is brought into close contact with the flange part 2b of the sheath 2.

ランプ基部1bにはガス導入路1c、ガス排出路1dを
設けている。
The lamp base 1b is provided with a gas introduction path 1c and a gas exhaust path 1d.

また鞘2の内側の片面には反射体2Cを取り付けている
Further, a reflector 2C is attached to one inside surface of the sheath 2.

第3図及び第4図は、ステージ5に載置した被処理物6
の上方に、第1図のランプユニットを4組配列した場合
を示している。
3 and 4 show the workpiece 6 placed on the stage 5.
This figure shows a case in which four sets of the lamp units shown in FIG. 1 are arranged above the lamp unit.

以上の構成において、その作用を説明する0本実施例で
は光CVDの場合を取り上げる。紫外線ランプ1は図示
を省略した点灯電源から電力の供給を受けて点灯し、発
光部1aから紫外線が放射される。放射されたー紫外線
は発光部1aと鞘2の空間には、ガス導入路1cから導
入された窒素が満たされているので紫外線はこの空間で
吸収されること無く、鞘2を透過して処理室4内のステ
ージ5上の被処理物6に照射され、表面処理が行われる
。尚、発光部1aから放射された紫外線のうち、被処理
物6と反射側に出た紫外線を反射体2cで反射させ被処
理物6への照射効率を高め、かつ無駄な部分への照射を
防ぐことにより、不要部での反応進行を抑える作用を行
う。
In this embodiment, the operation of the above structure will be explained using optical CVD. The ultraviolet lamp 1 is lit by receiving power from a lighting power source (not shown), and ultraviolet light is emitted from the light emitting portion 1a. Since the space between the light emitting part 1a and the sheath 2 is filled with nitrogen introduced from the gas introduction path 1c, the emitted ultraviolet rays are not absorbed in this space and are processed by passing through the sheath 2. The object to be treated 6 on the stage 5 in the chamber 4 is irradiated with the light to perform surface treatment. Incidentally, among the ultraviolet rays emitted from the light emitting part 1a, the ultraviolet rays emitted from the object to be treated 6 and the reflection side are reflected by the reflector 2c to increase the efficiency of irradiation to the object to be treated 6 and to prevent unnecessary irradiation to unnecessary parts. By preventing the reaction, it acts to suppress the progress of the reaction in unnecessary parts.

一方、ランプからは多量の発熱があり、そのままではラ
ンプ発光管内壁に酸化水銀が生成付着するため紫外線の
照度が急速に低下して行き短寿命になる。ランプの過熱
を防ぐために窒素ガスをガス導入路1cから鞘2内へ導
入してランプを冷却しながらガス排出路1dから排出す
る。この場合窒素ガスの流量を加減することによりラン
プの温度を適正に調節できる。
On the other hand, the lamp generates a large amount of heat, and if left as it is, mercury oxide will form and adhere to the inner wall of the lamp's arc tube, causing the illumination intensity of ultraviolet rays to rapidly decrease, resulting in a shortened lifespan. In order to prevent the lamp from overheating, nitrogen gas is introduced into the sheath 2 through the gas introduction path 1c and is discharged through the gas exhaust path 1d while cooling the lamp. In this case, the temperature of the lamp can be appropriately adjusted by adjusting the flow rate of nitrogen gas.

ランプが寿命に達した場合のランプ交換は、紫外線ラン
プ1を鞘2から抜き取り、別の紫外線ランプ1′を挿入
固定することにより完了する。この場合、処理室4内の
真空を破壊して処理室4を大気に暴露する必要が無いの
で、処理室4内壁への水分や不純物吸着等の状態変化に
よる表面処理特性の劣化等を回避できる。また交換に要
する装置のダウンタイムを大幅に短縮できる。
When the lamp reaches the end of its life, lamp replacement is completed by removing the ultraviolet lamp 1 from the sheath 2 and inserting and fixing another ultraviolet lamp 1'. In this case, there is no need to break the vacuum inside the processing chamber 4 and expose the processing chamber 4 to the atmosphere, so it is possible to avoid deterioration of surface treatment characteristics due to changes in conditions such as adsorption of moisture and impurities to the inner wall of the processing chamber 4. . Furthermore, the downtime of the device required for replacement can be significantly reduced.

光CVD装置のような薄膜を形成する装置の場合、原料
ガスが気層中で反応するため、生成物は被処理物のみな
らず、処理室内壁やランプ表面にも堆積してしまう。ラ
ンプ表面に堆積すると紫外線の照度が低下して性能が劣
化するので、これを防止するため定期的にクリーニング
する必要が有る。本実施例の場合、鞘2の形状が単純で
、十分な強度を持たせることが出きるので容易かつ作業
性の良いクリーニングが可能である。
In the case of an apparatus for forming a thin film, such as a photo-CVD apparatus, the raw material gas reacts in a gas layer, so that products are deposited not only on the object to be processed but also on the inner wall of the processing chamber and the surface of the lamp. If it accumulates on the lamp surface, the illuminance of ultraviolet rays will decrease and the performance will deteriorate, so to prevent this, it is necessary to periodically clean it. In the case of this embodiment, the sheath 2 has a simple shape and can have sufficient strength, so that cleaning can be performed easily and with good workability.

本発明の他の実施例を第6図及び第7図に示す。Another embodiment of the invention is shown in FIGS. 6 and 7.

本実施例は鞘2を円形断面とし、鞘2の内部に直管型の
ランプを挿入したユニットを処理室4に配列したもので
ある。本構成の場合、鞘2の断面形状を円形断面にする
ことにより力学上鞘2の管厚を最小限に薄くできるので
、紫外線が鞘2を透過する際の照度低下を最小化できる
効果が有る。
In this embodiment, the sheath 2 has a circular cross section, and units in which straight tube lamps are inserted inside the sheath 2 are arranged in the processing chamber 4. In the case of this configuration, by making the cross-sectional shape of the sheath 2 circular, the tube thickness of the sheath 2 can be reduced to a minimum mechanically, which has the effect of minimizing the decrease in illuminance when ultraviolet rays pass through the sheath 2. .

本発明のその他の実施例を第8図に示す。本実施例は鞘
2を矩形断面とし、鞘2の内部に直管型のランプを挿入
したユニットを処理室4の被処理物6の上方に配列した
ものである。各ランプユニットの間に隙間を設け、この
隙間から反応ガスをシャワー状にして被処理物6に注ぐ
ことにより、被処理物6上の表面処理速度の均一性を向
上する効果が有る。尚、鞘2の下面が平坦なので、反応
ガスの流れを制御しやすいという効果も有る。また鞘2
の外面が汚れた場合のクリーニングがし易いという効果
も有る。更には鞘2内の紫外線反射体2bを回転させて
紫外線を上側に向けることにより光のシャッターとして
も機能し、被処理物6への紫外線を遮ることができるの
で、瞬時に表面処理の反応を抑制もしくは停止できる効
果も有る。
Another embodiment of the invention is shown in FIG. In this embodiment, the sheath 2 has a rectangular cross section, and units in which straight tube lamps are inserted inside the sheath 2 are arranged above the object to be processed 6 in the processing chamber 4. By providing a gap between each lamp unit and pouring the reaction gas in the form of a shower onto the workpiece 6 from this gap, there is an effect of improving the uniformity of the surface treatment rate on the workpiece 6. Incidentally, since the lower surface of the sheath 2 is flat, there is also the effect that the flow of the reaction gas can be easily controlled. Also sheath 2
It also has the effect of making it easier to clean when the outer surface becomes dirty. Furthermore, by rotating the ultraviolet reflector 2b inside the sheath 2 and directing the ultraviolet rays upward, it also functions as a light shutter, blocking ultraviolet rays from the object 6 to be treated, so that the surface treatment reaction can be instantaneously carried out. It also has the effect of suppressing or stopping it.

この効果は、紫外線ランプなどの光源は、特性上電力を
供給してもすぐには定常にならず、30分程度のフオー
ムアップが必要であるため、ランプの短期的な点滅によ
る光の制御は困難であることを考えれば非常に有用な効
果である。
This effect is due to the characteristics of light sources such as ultraviolet lamps, which do not stabilize immediately even after power is supplied and require a warm-up period of about 30 minutes. Considering how difficult it is, this is a very useful effect.

本発明のその他の実施例を第9図に示す。本実施例は鞘
2を長方形断面とし、鞘2の内部にU字型のランプを挿
入したユニットを処理室4の被処理物6の上方に配列し
たものである。各ランプユニットの間に第8図同様の隙
間を設け、この隙間から反応ガスをシャワー状にして被
処理物6に注ぐ。鞘2の断面形状は長円形であっても良
い。
Another embodiment of the invention is shown in FIG. In this embodiment, the sheath 2 has a rectangular cross section, and a unit in which U-shaped lamps are inserted inside the sheath 2 is arranged above the workpiece 6 in the processing chamber 4. A gap similar to that shown in FIG. 8 is provided between each lamp unit, and the reaction gas is poured into the object 6 from this gap in the form of a shower. The cross-sectional shape of the sheath 2 may be oval.

本発明のその他の実施例を第10図に示す。本実施例は
複数個の鞘を一体化して板状にし、その片面を処理室に
向け、反対の面を大気側にしたものである。本実施例の
場合、光透過窓7の内面が完全に平坦にできるので、大
面積の被処理物にも比較的容易に対応できる効果が有る
。また処理室本体と透過窓の間の真空シール構造が簡単
になるので、リークに対する信頼性が高まり、装置の製
作コストも低減できる効果も有する。
Another embodiment of the invention is shown in FIG. In this embodiment, a plurality of sheaths are integrated into a plate shape, with one side facing the processing chamber and the other side facing the atmosphere. In the case of this embodiment, since the inner surface of the light transmitting window 7 can be made completely flat, it has the effect of being able to relatively easily handle large-area objects to be processed. Furthermore, since the vacuum seal structure between the processing chamber main body and the transmission window is simplified, reliability against leakage is increased, and the manufacturing cost of the apparatus can also be reduced.

本発明のその他の実施例を第11図に示す。本実施例は
形態的には第10図の実施例に近いが、光透過窓のうち
、大気側に補強体8を取り付けて補強することにより光
透過窓7の厚みを大幅に薄くしたものである。これによ
り処理室内部に放射される光の照度低下による処理速度
の低下を防ぐことができる。尚、補強体8は光透過窓7
と別の材料の部材を固着する構造を示したが、光透過窓
7と同村の一体構造であっても良い。本実施例の場合は
、補強体8の形状を成る程度自由に決められるので光源
の形状や寸法に対する制約がiJ+さくなり、装置の設
計が容易になる効果が有る。
Another embodiment of the invention is shown in FIG. This embodiment is similar in form to the embodiment shown in FIG. 10, but the thickness of the light-transmitting window 7 is significantly reduced by attaching a reinforcing body 8 to the atmosphere side of the light-transmitting window. be. This can prevent a decrease in processing speed due to a decrease in the illuminance of the light emitted into the processing chamber. Note that the reinforcing body 8 is a light transmitting window 7.
Although a structure is shown in which a member made of a different material is fixed to the light transmitting window 7, it may be an integral structure of the same material as the light transmitting window 7. In the case of this embodiment, since the shape of the reinforcing body 8 can be determined to a certain extent, there are fewer restrictions on the shape and dimensions of the light source, which has the effect of facilitating the design of the device.

次に5本発明の表面処理方法の実施例を第1図。Next, FIG. 1 shows an example of the surface treatment method of the present invention.

第2図及び第12図を用いて説明する。第1図のガス導
入路1cから鞘2の内部に窒素ガスを供給し、鞘2の内
部を窒素ガス雰囲気とする。尚、紫外線ランプ1を冷却
した窒素ガスはガス排気路1dから外部へ排出される。
This will be explained using FIG. 2 and FIG. 12. Nitrogen gas is supplied to the inside of the sheath 2 from the gas introduction path 1c in FIG. 1 to create a nitrogen gas atmosphere inside the sheath 2. Note that the nitrogen gas that has cooled the ultraviolet lamp 1 is exhausted to the outside from the gas exhaust path 1d.

この場合、紫外線ランプから放射される紫外線はほとん
ど窒素ガスに吸収されることなく鞘2を透過して外部へ
放射される。ここで供給するガスを窒素ガスから酸素ガ
スもしくは空気に置き換えると、今度は紫外線が酸素ガ
スに吸収されるため鞘2から外部への放射量が小さくな
り反応速度が低下する。この場合の酸素比率と照度比の
関係の一例を第12図に示した。これにより処理におけ
る反応速度を制御できる。尚、鞘2内へ供給するガスの
種類や成分を種種調整することにより更に高度なプロセ
ス条件の制御が可能であることは言うまでもない。
In this case, the ultraviolet rays emitted from the ultraviolet lamp pass through the sheath 2 and are emitted to the outside without being absorbed by the nitrogen gas. When the gas supplied here is replaced with oxygen gas or air from nitrogen gas, the ultraviolet rays are now absorbed by the oxygen gas, so the amount of radiation emitted from the sheath 2 to the outside becomes smaller and the reaction rate decreases. An example of the relationship between the oxygen ratio and the illuminance ratio in this case is shown in FIG. This allows the reaction rate in the process to be controlled. It goes without saying that by adjusting the type and components of the gas supplied into the sheath 2, more advanced control of process conditions is possible.

本発明の表面処理方法の他の実施例を第13図及び第1
4図を用いて説明する。第13図において鞘2内へ供給
する窒素及び酸素ガスの配管に流量調整手段10を設け
る。一方鞘2から放射された紫外線の強度を照度モニタ
11で検出しその信号を制御部12に取り込む。照度モ
ニタの信号強度に応じて流量調整手段10の開度を調整
する。
Other embodiments of the surface treatment method of the present invention are shown in FIGS.
This will be explained using Figure 4. In FIG. 13, a flow rate adjusting means 10 is provided in the piping for supplying nitrogen and oxygen gas into the sheath 2. On the other hand, the intensity of the ultraviolet rays emitted from the sheath 2 is detected by the illuminance monitor 11, and the signal is taken into the control section 12. The opening degree of the flow rate adjusting means 10 is adjusted according to the signal strength of the illuminance monitor.

これにより第14図に示すように、被処理物6へ照射さ
れる紫外線の照度が一定になるように、窒素と酸素の混
合ガスにおける酸素濃度比を逐次変化させる。これによ
り光源が寿命に達するまで長期間一定の照度つまり処理
特性が得ら九るので、再現性の良い安定した処理が可能
になる効果も生じる。
As a result, as shown in FIG. 14, the oxygen concentration ratio in the mixed gas of nitrogen and oxygen is successively changed so that the illuminance of the ultraviolet rays irradiated onto the object 6 to be treated is constant. This makes it possible to obtain constant illuminance, that is, processing characteristics, for a long period of time until the light source reaches the end of its lifespan, so that stable processing with good reproducibility becomes possible.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、光源部の構造が簡単で、確実なランプ
最冷点温度制御ができ、十分な冷却が可能であり、クリ
ーニングしやすく、ランプ交換時の真空破壊が不要な表
面処理装置を得ることができるので、高照度、高性能、
高信頼性、長寿命且つ低価格の光源部及びこれを組み込
んだ表面処理装置を実現できる効果が得られる。
According to the present invention, the structure of the light source is simple, the temperature of the lamp's coldest point can be controlled reliably, sufficient cooling is possible, the surface treatment device is easy to clean, and there is no need to break the vacuum when replacing the lamp. Because you can get high illumination, high performance,
The effect of realizing a highly reliable, long-life, and low-cost light source section and a surface treatment device incorporating the same can be obtained.

無駄な部分への照射を防ぐことにより、不要部での反応
進行を抑える効果も得られる。
By preventing irradiation to unnecessary parts, the effect of suppressing the reaction progress in unnecessary parts can also be obtained.

ランプ交換時に処理室の真空を破って処理室を大気に暴
露する必要が無いので、処理室内壁への水分や不純物吸
着等の状態変化による表面処理特性の劣化等を回避でき
、製品の歩留まり向上が得られることは大きな効果であ
る。またランプ交換に要する装置のダウンタイムも大幅
に短縮できるので生産性の向上する効果も得られる。
Since there is no need to break the vacuum in the processing chamber and expose the processing chamber to the atmosphere when replacing lamps, it is possible to avoid deterioration of surface treatment characteristics due to changes in conditions such as moisture and impurity adsorption on the walls of the processing chamber, improving product yield. This is a great effect. Furthermore, the downtime of the equipment required for lamp replacement can be significantly reduced, resulting in the effect of improving productivity.

鞘の内部に流すガスの種類や成分比率等を調整すること
により、鞘の外部に放射する光のスペクトルを変更でき
るので、被処理物の処理特性を容易に制御できる効果も
有る。この機能を極端に使うと、光がほとんど全てガス
に吸収される場合は光が透過できないので光のシャッタ
ーとして利用できる効果も得られる。
By adjusting the type and component ratio of the gas flowing inside the sheath, the spectrum of the light emitted to the outside of the sheath can be changed, which also has the effect of easily controlling the processing characteristics of the object to be processed. If this function is used to an extreme, if almost all of the light is absorbed by the gas, no light will be able to pass through, so it can be used as a light shutter.

また、反射板を回転させ光のシャッターとして機能させ
ることにより被処理物への紫外線を遮ることができるの
で、瞬時に表面処理の反応を抑制もしくは停止できる効
果も有る。
In addition, by rotating the reflector plate and making it function as a light shutter, it is possible to block ultraviolet rays from being applied to the object to be treated, which has the effect of instantly suppressing or stopping the surface treatment reaction.

反応ガスはシャワー状にして被処理物に注ぐことにより
、被処理物上の表面処理速度の均一性を向上する効果が
有る。
By pouring the reaction gas in the form of a shower onto the object to be treated, there is an effect of improving the uniformity of the surface treatment rate on the object to be treated.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の表面処理装置のランプユニット部の平
断面図、第2図は第1図のA−A断面図。 第3図は第1図のランプユニット4組を組み込んだ表面
処理装置の平面図、第4図は第3図のB−B断面図、第
5図は第3図の実施例におけるランプの着脱時の様子を
示す図、第6図は本発明の他の実施例を示す図、第7図
は第6図の実施例の平面図5第8図、第′9図、第10
図、第11図は本発明のその他の実施例を示す図、第1
2図は本発明の表面処理方法の実施例のタイムチャート
、第13図は本発明の表面処理装置の実施例のシステム
構成の一例を示す図、第14図は本発明の表面処理方法
の実施例における機能及び効果の説明図である。 1.1′・・・紫外線ランプ、1a・・・発光部、1b
・・・ランプ基部、1c・・・ガス導入路、1d・・・
ガス排出路、2・・・鞘、2a・・・鞘部、2b・・・
フランジ部。 2c・・反射体、3・・シール、4・・・処理室、5・
・ステージ、6・・・被処理物、7・・・光透過窓、8
・・・補強体、10・・・流量調整手段。
FIG. 1 is a plan sectional view of a lamp unit portion of the surface treatment apparatus of the present invention, and FIG. 2 is a sectional view taken along the line AA in FIG. Fig. 3 is a plan view of a surface treatment device incorporating the four sets of lamp units shown in Fig. 1, Fig. 4 is a sectional view taken along line BB in Fig. 3, and Fig. 5 is a lamp attachment/detachment in the embodiment shown in Fig. 3. FIG. 6 is a diagram showing another embodiment of the present invention. FIG. 7 is a plan view of the embodiment shown in FIG.
11 are diagrams showing other embodiments of the present invention, FIG.
Fig. 2 is a time chart of an embodiment of the surface treatment method of the present invention, Fig. 13 is a diagram showing an example of a system configuration of an embodiment of the surface treatment apparatus of the present invention, and Fig. 14 is a diagram showing the implementation of the surface treatment method of the present invention. It is an explanatory diagram of functions and effects in an example. 1.1'...Ultraviolet lamp, 1a...Light emitting part, 1b
...Lamp base, 1c...Gas introduction path, 1d...
Gas discharge path, 2...Sheath, 2a...Sheath part, 2b...
flange part. 2c...Reflector, 3...Seal, 4...Processing chamber, 5...
・Stage, 6... Processing object, 7... Light transmission window, 8
... Reinforcement body, 10... Flow rate adjustment means.

Claims (1)

【特許請求の範囲】 1、固体の表面に反応ガスを接触させ、これに光を照射
して反応処理を行う表面処理装置において、 光を透過し、かつ反応処理室に対して気密もしくは耐真
空の鞘を取付け、この鞘の中に光源を挿入し、かつ鞘の
中に流体を導入排出する手段を具備したことを特徴とす
る表面処理装置。 2、上記光源は紫外線ランプであることを特徴とする特
許請求の範囲第1項記載の表面処理装置。 3、上記鞘は石英製であることを特徴とする特許請求の
範囲第1項記載の表面処理装置。 4、上記鞘は袋形であることを特徴とする特許請求の範
囲第1項記載の表面処理装置。 5、上記鞘は管状であることを特徴とする特許請求の範
囲第1項記載の表面処理装置。 6、上記鞘は複数の光源が挿入できる形態であることを
特徴とする特許請求の範囲第1項記載の表面処理装置。 7、上記鞘に導入する上記流体は単一成分若しくは複数
成分の流体であることを特徴とする特許請求の範囲第1
項記載の表面処理装置。 8、上記鞘に導入する上記流体は上記光源が発生する光
の波長を制御する特性を有する流体であることを特徴と
する特許請求の範囲第1項記載の表面処理装置。 9、上記鞘に導入する上記流体は紫外線を吸収しない流
体であることを特徴とする特許請求の範囲第1項記載の
表面処理装置。 10、上記鞘に導入する上記流体は窒素であることを特
徴とする特許請求の範囲第1項記載の表面処理装置。 11、光源と鞘とガス導入排出手段とを備えたことを特
徴とする光源ユニット。 12、上記鞘の内部に反射体を設けたことを特徴とする
特許請求の範囲第1項記載の表面処理装置。 13、上記反射体は上記鞘内部で回転または移動する構
造であることを特徴とする特許請求の範囲第1項記載の
表面処理装置。 14、上記鞘の内部に供給するガスの組成を制御するこ
とにより被処理物へ照射される光の照度を一定もしくは
任意に制御することを特徴とする特許請求の範囲第1項
記載の表面処理装置。
[Claims] 1. A surface treatment device that performs a reaction treatment by bringing a reaction gas into contact with the surface of a solid and irradiating it with light, which transmits light and is airtight or vacuum resistant to the reaction treatment chamber. 1. A surface treatment device, comprising: a sheath attached thereto; a light source inserted into the sheath; and means for introducing and discharging a fluid into the sheath. 2. The surface treatment apparatus according to claim 1, wherein the light source is an ultraviolet lamp. 3. The surface treatment apparatus according to claim 1, wherein the sheath is made of quartz. 4. The surface treatment device according to claim 1, wherein the sheath is bag-shaped. 5. The surface treatment device according to claim 1, wherein the sheath is tubular. 6. The surface treatment apparatus according to claim 1, wherein the sheath has a form into which a plurality of light sources can be inserted. 7. Claim 1, wherein the fluid introduced into the sheath is a single-component or multi-component fluid.
The surface treatment device described in Section 1. 8. The surface treatment apparatus according to claim 1, wherein the fluid introduced into the sheath is a fluid having a property of controlling the wavelength of light generated by the light source. 9. The surface treatment apparatus according to claim 1, wherein the fluid introduced into the sheath is a fluid that does not absorb ultraviolet rays. 10. The surface treatment apparatus according to claim 1, wherein the fluid introduced into the sheath is nitrogen. 11. A light source unit comprising a light source, a sheath, and a gas introduction/exhaust means. 12. The surface treatment apparatus according to claim 1, wherein a reflector is provided inside the sheath. 13. The surface treatment apparatus according to claim 1, wherein the reflector has a structure that rotates or moves inside the sheath. 14. The surface treatment according to claim 1, wherein the illuminance of the light applied to the object to be treated is controlled to be constant or arbitrary by controlling the composition of the gas supplied to the inside of the sheath. Device.
JP15515290A 1990-06-15 1990-06-15 Surface treating method and device Pending JPH0448720A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15515290A JPH0448720A (en) 1990-06-15 1990-06-15 Surface treating method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15515290A JPH0448720A (en) 1990-06-15 1990-06-15 Surface treating method and device

Publications (1)

Publication Number Publication Date
JPH0448720A true JPH0448720A (en) 1992-02-18

Family

ID=15599673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15515290A Pending JPH0448720A (en) 1990-06-15 1990-06-15 Surface treating method and device

Country Status (1)

Country Link
JP (1) JPH0448720A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009535858A (en) * 2006-05-01 2009-10-01 アプライド マテリアルズ インコーポレイテッド UV-assisted heat treatment
JP2016039257A (en) * 2014-08-07 2016-03-22 ウシオ電機株式会社 Ultraviolet light irradiation device, and ultraviolet light irradiation processing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009535858A (en) * 2006-05-01 2009-10-01 アプライド マテリアルズ インコーポレイテッド UV-assisted heat treatment
JP2016039257A (en) * 2014-08-07 2016-03-22 ウシオ電機株式会社 Ultraviolet light irradiation device, and ultraviolet light irradiation processing device

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