JPS61131429A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To enable to form a thin film having a uniform film thickness over the whole surface of the substrate with a wide area at a speedy rate by a method wherein plural pieces of linear lamps are used as this light source, and at the same time, the linear lamps are arranged in such a way that the central ones among the linear lamps are particularly made higher the heights thereof from the substrate. CONSTITUTION:Linear lamps 2 are disposed in such a way that the central linear lamps among the linear lamps are particularly made higher the heights thereof from a substrate 5. By this way, the illuminance difference of light in a reaction chamber 1 can be remarkably lessened over a wide extent in the interior of the reaction chamber 1. Accordingly, a thin film having a uniform film thickness can be formed on the substrate 5 with a wide area and the high- accuracy semiconductor can be easily manufactured efficiently. It is most desir able to dispose each linear lamp 2 in such a way that the angle theta becomes about 10 deg. or thereabouts. If so, the fluctuations of the illuminance of light on the substrate 5, whereon the thin film is formed, can be suppressed to + or -5%.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and in particular to optically pumped CV
D (photo chen+1cal vapor
The present invention relates to an apparatus for forming a thin film using a deposition method.

[Conventional technology]

The CVD method is an important technology for forming thin films in integrated circuit devices, but in the conventional CVD method, the reaction gas is mainly heated to cause a chemical reaction, which results in a high reaction temperature. The thin film formed by this method is easily damaged.

Therefore, recently, a photo-excited CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD. According to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods, plasma CVD methods, etc., and there is no damage to thin films. It can be reduced.

In general, in the photo-excited CVD method, it is known that the intensity of light has a large effect on the rate of thin film formation. It is known that the formation speed of is increased in proportion to the intensity of light irradiation.

Figure 2 shows the basic configuration of a conventional thin film forming apparatus using such a photo-excited CVD method. A light source consisting of a low-pressure mercury lamp, 3 a heater for heating the substrate, 4 a reactive gas such as silane, 5 a substrate on which a thin film is formed, 6 a light entrance window made of a light-transmitting material, 7 a reactive gas supply port, 8 9 is a gas outlet for discharging the gas 4a after the reaction, and 9 is a fixing table on which the substrate 5 is placed.

In this apparatus, when a reaction gas 4 is introduced into the reaction chamber 1 from the supply lower, the reaction gas 4 is excited and decomposed by the light beam projected from the entrance window 6. The resulting reaction products are deposited on the substrate 5 heated at a low temperature by the heater 3, and the gas 4a after the zero reaction in which a thin film is formed on the substrate 5 is discharged from the exhaust port 8.

[Problem that the invention seeks to solve]

However, since this conventional device uses a single linear lamp 2 as a light source, the irradiation intensity at both ends of the substrate 5 in the direction perpendicular to the lamp axis is weaker than at the center. There is a problem in that the film formation rate at both ends of the substrate 5 is slower than that at the center, resulting in a thinner film, resulting in non-uniform film thickness of the formed thin film.

This invention was made in view of the above points, and it is possible to form a film with a uniform thickness by eliminating the difference in illuminance on the substrate, and furthermore, by increasing the irradiation intensity over a wide range, it is possible to form a film with a uniform thickness on the substrate. Another object of the present invention is to provide a semiconductor manufacturing apparatus that can form a film at a high speed.

[Means for solving problems]

A semiconductor manufacturing apparatus according to the present invention uses a plurality of linear lamps as a light source, and the height of the linear lamps from the substrate is increased toward the center.

[Effect]

In this invention, since a plurality of linear lamps are used as light sources, strong illuminance light is emitted over a wide range, and since the linear lamps in the center are higher in height from the substrate, The difference in illuminance is eliminated, and a thin film of uniform thickness can be efficiently formed.

(Example〕 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows a semiconductor manufacturing apparatus according to an embodiment of the present invention, in which 1 is a reaction chamber, 3 is a heater for heating a substrate, and 4
5 is a reactive gas, 5 is a substrate, 6 is a light entrance window made of a light-transmitting material, 7 and 8 are a reactive gas supply port and a discharge port, respectively, and 9 is a fixed stand for loading the substrate, and these are shown in FIG. It is similar to the one.

Further, reference numeral 2 denotes a linear lamp as a light source, and a plurality of linear lamps 2 are provided at equal intervals above the outside of the reaction chamber 1, and the linear lamps 2 are arranged parallel to each other, and the center one is more distant from the substrate 5. It is arranged so that it is high in height.

Next, the effects will be explained.

The reaction gas 4 introduced into the reaction chamber 1 causes a photochemical reaction by the light from the linear lamp 2, and the resulting reaction product is deposited on the substrate 5 heated by the heater 3. The process of forming a thin film is the same as in the conventional method.

At this time, in the device of this embodiment, a plurality of linear lamps 2 are arranged along the flow direction of the reaction gas 4, so the illuminance distribution of the light on the substrate 5 in this direction is more uniform than in the conventional device. This also increases the irradiation intensity, which greatly improves the film formation rate.

If multiple linear lamps are arranged in parallel as light sources, the illuminance distribution at the center of the reaction chamber will be uniform, but due to the superposition of lights, the illuminance at the center of the reaction chamber will be lower than that at both ends. However, in the device of this embodiment, the linear lamps 2 are arranged such that the height from the substrate 5 is higher as the linear lamps 2 are located in the center. As a result, the difference in illumination over a wide range of the reaction chamber 1 is significantly reduced.

Therefore, a thin film with a uniform thickness can be formed on the substrate 5 over a wide area, and a high-precision semiconductor can be manufactured easily and efficiently.

In terms of specific numerical values, it is most desirable to arrange each linear lamp 2 so that the angle θ shown in FIG. It is possible to suppress the fluctuation to ±5%.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention,
By using multiple linear lamps as light sources and arranging the linear lamps so that the center one is higher from the substrate, it is possible to form a thin film with a uniform thickness over a wide area of the substrate. It can be formed at high speed and has the effect of efficiently manufacturing high-precision semiconductors.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional configuration diagram of a conventional semiconductor manufacturing apparatus. 1... Reaction chamber, 2... Linear lamp (light source), 4...
・Reactive gas, 5...Substrate, 6...Light entrance window, 7...
- Reaction gas supply port, 8... Reaction gas discharge port. In the drawings, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] (1) A substrate that is equipped with a light source, a reaction chamber having a light projection window, a reaction gas supply port, and a gas discharge port, projects light onto a reaction gas to cause a photochemical reaction, and is placed in the reaction gas. In semiconductor manufacturing equipment that forms a thin film on a semiconductor manufacturing device, the light source is made up of a plurality of linear lamps arranged in parallel to each other, and the height of the linear lamps from the substrate increases as the center one increases. A semiconductor manufacturing device characterized by: