JPH04199622A - Light source for light excitation processing device - Google Patents

Abstract

PURPOSE:To make it possible to stably and uniformly emit a light high degree of illumination on a large area for a long period of time by a method wherein a light source is provided for formation of a thin film on a substrate by the photochemical reaction of reaction gas, and a plurality of relatively small lamps are arranged independently on a plane or curved surface of the light source. CONSTITUTION:Nineteen small type heavy hydrogen lamps 12 are arranged at regular intervals on the plane surface in a hollow cylindrical lamp house 11 which constitutes a passage for cooling water, and the circumference of these lamps 12 is cooled by the cooling water connected to the lamp house 11. On the other hand, control devices 15, with which the lamps 12 are independently lit or put out or they emit pulse light of optional wavelength, are connected to the lamps 12. The light-emitting efficiency of each lamp can be enhanced by using relatively small lamp in this light source, the synergistic effect between lamps works by arranging a plurality of lamps on a plane or curved surface, and a high degree of illumination can be obtained. Also, the area of illumination can be made larger by increasing the number of lamps to be arranged. As a result, the light source for large illumination area, having high degree of illumination and uniform illumination distribution, can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a light source for a photoexcitation process device used for manufacturing semiconductors, liquid crystal displays, and the like.

[Conventional technology]

In recent years, light energy has been used to produce halo Iy such as chlorine gas.
Active efforts are being made to develop photo-etching equipment that decomposes carbon gas to etch silicon wafers, etc., and CVD equipment that decomposes compound gases such as silane and disilane to form thin films on silicon wafers and glass substrates. ing. These optical excitation process apparatuses using light are attracting a lot of attention as next-generation device manufacturing methods because they can lower the process temperature and do not cause deterioration of the substrate or formed film due to charged particles.

Regarding the conventionally used optical excitation process equipment, the fourth
This will be briefly explained using figures. In the figure, [ is a reaction chamber that accommodates a substrate 4 to be processed, and a reaction gas introduction system and exhaust system are connected to an introduction port 5 and an exhaust port 6, respectively. The reaction chamber! Inside, there is a stage 2 on which the board 4 is mounted.
is installed, and the temperature is usually controlled to a constant temperature by a heater 3 or the like.

The reaction chamber 1 is connected to a light source chamber 8 via a metal mesh with a high aperture ratio or a quartz ejection plate 7 having many small holes. The light source chamber 8 is equipped with a light source 1O that emits a wavelength suitable for photochemical reaction #C, and is configured to irradiate light onto the substrate 4, and also has an inert gas introduction system through an inlet port. Connected to 9.

The reactive gas is introduced in the form of a sheet almost parallel to the surface of the substrate 4 from the reactive gas inlet 5, is decomposed or reacted with light of a suitable wavelength, and a thin film is deposited on the substrate 4. At this time, the inert gas introduced from the inert gas inlet 9 is passed through a metal mesh with a high aperture ratio or a quartz ejection plate 7 with many small holes, and is directed to the reaction chamber so as to face the surface of the substrate 40! The light source IO is configured to be able to prevent the film from adhering to the lamp surface.

Based on the photoexcitation process device configured as above,
The light source IO, which can be said to be the heart of it, is usually a high-pressure mercury lamp,
Low-pressure mercury lamps, xenon lamps, deuterium lamps, rare gas resonance line lamps, etc. are used, but these light sources use large-diameter silicon wafers of 6 to 8 inches or large glass substrates for liquid crystals, and are uniform when dying. There were problems in that it was difficult to irradiate light at a high illumination intensity, the film formation rate was low, and the thickness distribution of the deposited film was poor.

In particular, for light sources that generate vacuum ultraviolet light with a relatively short wavelength, such as deuterium lamps, there are very limited light-transmitting materials that can be used, so large areas are required.

High illumination original y! , has not been developed at all at present. Therefore, increasing the area of the light source is an essential and serious problem.

In order to deal with the above-mentioned problems, the present inventors arranged a large number of comparatively small discharge tube units (electrodes), and each discharge tube unit We proposed a nine-light excitation process device equipped with a large-area irradiation light source with a partition with a hole in the wall.

[Problem to be solved by the invention]

Even in the photoexcitation process device proposed above,
According to the results of subsequent studies, as the irradiation area increases, the cooling effect of the discharge tube unit becomes worse, the temperature rises, the illuminance decreases, and the lifespan of -jt# is shortened. New problems have arisen, such as difficulty and high cost.

As described above, in the current optical excitation process equipment, there is no light source that can stably irradiate a large area with high illuminance and uniform illuminance for a long time, which is a major 4C problem, and it is difficult to introduce it into the production line. It was also the biggest reason for the delay.

The purpose of the present invention is to solve the nine problems of the prior art described above, and to provide a light source for a photoexcitation process device that can stably irradiate a large area with high illuminance, uniform illuminance, and for a long time. There is.

[I! ! Means to solve the problem]

To achieve the above object, the present invention provides a reaction chamber containing a substrate to be treated, means for introducing and exhausting a reaction gas into the reaction chamber, and a method for photochemically reacting the reaction gas and disposing the reaction gas on the substrate. A light excitation process apparatus equipped with a light source for forming a thin film is characterized in that the light source is composed of a large number of independent, relatively small lamps arranged on a flat or curved surface.

(9) A control means is provided to control the independent l/R lamps constituting the above-mentioned light source to turn them on and off independently or to generate pulses of arbitrary length, so as to control the illuminance at an arbitrary intensity on the substrate to be treated. It is characterized by being able to generate a distribution.

Regarding the relatively small type of lamp in the present invention,
High-pressure water chain lamps, low-pressure water chain lamps, xenon lamps, deuterium lamps, rare gas resonance line lamps, and the like are often used, but are not particularly limited.

Further, in the present invention, the term "multiple number" preferably means three or more from the viewpoint of illuminance and uniformity. Further, the spacing between the lamps is not particularly limited, but from the viewpoint of illuminance and uniformity, the closer the spacing, the better.

[For production]

The light source for a photoexcited process device according to the present invention configured as described above can increase the luminous efficiency of each lamp by using relatively small lamps, and can also increase the luminous efficiency between the lamps by arranging a large number of them on a flat or curved surface. A synergistic effect works and extremely high illuminance can be obtained. Another advantage is that by increasing the number of lamps arranged, the irradiation area can be increased as much as desired.

According to another feature of the present invention, since each lamp can be controlled independently, any illuminance distribution can be provided. If the flow of the reaction gas becomes uneven due to structural problems in the reaction chamber, resulting in a concentration distribution on the substrate, it is possible to make the film thickness distribution uniform by providing an illumination distribution that compensates for the concentration distribution that occurs. can.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1A is a sectional view of a light source for a photoexcitation process device showing one embodiment of the present invention, FIG. 1B is a plan view, and ztc diagram (a)
(b) In (c), the number of lamps is 7, 19, and 37.
This is a layout diagram for a book. ◇ In the figure, 19 small deuterium lamps 12 with a diameter of approximately 20 m are placed on a horizontal plane, with a distance between They are arranged at equal intervals of 40 m, and around each of these lamps 12, cooling water flows in from the artificial summer 3 connected to -IQ (1ill on the right in the figure) of the lamp house 11, and the other 1m (#1ill on the left in the figure) flows in. ) is cooled by the cooling water flowing out from the cooling water outlet L4 connected to the cooling water outlet L4. On the other hand, each lamp 12 has
A control device 15 is connected to each of the lights to independently turn on/off or to emit pulsed light of arbitrary length.

Next, the effect will be explained.

Seven lamps and 19 lamps were constructed as described above.

Figure 2 shows the results of measuring the illuminance distribution at points 100 degrees away from three light sources with 37 lights each. According to this, the range that provides an illuminance distribution within ±5% is: 7 lamps - m = 43 meters in diameter 19 lamps - within 127 W in diameter 37 lamps - m - within 183 m in diameter. From the above, it can be seen that according to the present invention, as the number of lamps increases, the area with uniform illuminance distribution becomes larger, and it becomes possible to manufacture a light source with a large irradiation area at any cost.

In addition, since the surrounding area of each lamp 12 is sufficiently cooled by cooling water, a decrease in illuminance due to temperature rise is suppressed even when the lamp is lit for a long time, and the lamp life is extended. Device It15
are connected, each lamp 12 can be lit/lit independently.
The light can be turned off or emitted in pulses with an arbitrary length, thereby providing an arbitrary illuminance distribution.

In the above embodiment, the structure in which each lamp 12 is arranged on a flat surface has been explained, but it may be arranged on a curved surface. 2 is a diagram showing the measurement results of the illuminance distribution of one lamp, with the vertical axis representing the illuminance and the horizontal axis representing the distance in the radial direction from the center of the light source. According to this, the illuminance and illuminance distribution are very poor compared to the case of the above embodiment in which a large number of lamps are arranged.
It can be seen that it cannot be used at all for large area substrates.

〔Effect of the invention〕

As explained above, according to the present invention, by arranging a large number of relatively small lamps on a flat or curved surface, it is possible to create a large-area light source that is flat-illuminated and has a uniform illuminance distribution. Therefore, it becomes possible to make a back-up of the optical excitation process device at the production level.

Further, by adjusting Vζ so that each lamp can be controlled independently, an arbitrary illuminance distribution can be provided. As a result, due to structural problems in the reaction chamber, the flow of the reaction gas becomes uneven, resulting in concentration distribution on the substrate.
By providing an illuminance distribution that compensates for this generated concentration distribution, it is also possible to make the film thickness distribution uniform.

[Brief explanation of the drawing]

FIG. 1A is a sectional view of a light source for a photoexcitation process device showing an embodiment of the present invention, FIG. 1B is a plan view, and FIG. 1C (a)
(b) (c) are layout diagrams when the number of lamps is 7, 19, and 37; Figure 2 is a diagram showing the illuminance measurement results from the center of the light source measured in the embodiment of the present invention; Figure 3 shows F! of one small deuterium lamp used in the embodiment of the present invention. The diagram showing @degree-j constant results and the diagram @4 are cross-sectional views of a conventional optical excitation process device showing fII. l...Reaction chamber, 2...Substrate stage. 3... Heater, 4... Board. 5... Reaction gas inlet, 6... Exhaust port. 7... Ejection plate, 8... Light source chamber. 9... Inert gas inlet, 10... Light source. 11... Lamp house, 12... Small lamp. 13... Cooling water inlet, 14... Cooling water outlet. 15... Small lamp system @l tribute. Figure 2. Radial distance from the center of the light source (Fig. 3) Radial distance from the center of the light source m [Cm] February 1, 1991

Claims (1)

[Claims] 1. A reaction chamber containing a substrate to be treated, means for introducing and exhausting a reaction gas into the reaction chamber, and forming a thin film on the substrate by photochemically reacting the reaction gas. 1. A light source for a photo-excited process apparatus, characterized in that the light source comprises a large number of independent, relatively small lamps arranged on a flat or curved surface. 2. By providing a control means for independently turning on and off the independent relatively small lamps constituting the light source or causing them to emit pulses of arbitrary length, it is possible to generate an arbitrary illuminance distribution on the substrate to be treated. 2. The light source for a photoexcitation process apparatus according to claim 1, wherein the light source is configured as follows.