JPS61171120A - Photo excitation process equipment - Google Patents

Abstract

PURPOSE:To increase the productivity by installing the light source in the center of the reaction chamber where almost all light from the source are radiated and making it possible to arrange the substrates in all directions. CONSTITUTION:An ultra-violet ray lamp 11 of the bar type as the light source is installed on the central axis of the hollow part of the hollow cylindrical reaction chamber 10. The inside wall 12 in contact with the hollow part of the reaction chamber 10 are made of transparent cylindrical material. The pressure in the space S1 and the space S2 are always measured, and the inactive gas supplying means 17 and the process gas supplying means are so controlled that the pressure in the space S1 becomes higher than the pressure in the space S2. In this situation, the process gas does not flow into the space S1 from the space S2, because the inactive gas flows from the space S1 into the space S2 is viscous. Hence, the film caused by decomposition of the process gas is not formed on the surface of the inside wall 12 and the surface and the holes of contamination preventing cylinder 15, and the penetration of the ultra violet ray from the ultra violet ray lamp 11 is not obstructed at all.

Description

[Detailed description of the invention] industrial application field The present invention relates to a photoexcitation process device with high productivity.

[Prior art] Recently, methods for surface treatment of materials using light as an energy source have been developed.
A so-called photoexcitation process device has been developed.

FIG. 2 shows an optical CVD 1! which is one of such optical excitation process equipment. An example of F is shown.

In the figure, 1 is a reaction chamber in which a substrate 2 is placed. A window 3 made of a transparent material is provided in a part of the wall of the reaction chamber, and the opposite side of the substrate 2 (outside the reaction chamber) is provided through the window.
A light 314 (eg, a laser light source) is provided. In such an apparatus, after the reaction chamber is once made into a high vacuum by the exhaust system M5, a process gas is supplied into the reaction chamber 1 from the gas supply source 6, and the inside of the reaction chamber is heated to, for example, 10-1 to 10To
rr pressure. Then, when the light source 4 is activated,
Near the surface of the substrate 2, the process gas undergoes a photochemical reaction (
(photoexcitation), and a film of the process gas is formed on the surface of the substrate.

[Problems to be Solved by the Invention] In such a device, the light source serving as the energy source is placed in a position where only a portion of the light (energy) emitted by the light source can be used. Therefore, the utilization efficiency of light from the light source was poor, the number of substrate surface treatments was small, and productivity was low.

The present invention aims to solve such problems and provides a novel optical excitation process device.

[Means for Solving the Problems] The optically excited professional wrestling device of the present invention introduces a process gas and light into a reaction chamber to optically excite the gas within the reaction chamber, thereby stimulating the reaction of a substrate placed within the reaction chamber. An apparatus for chemically treating a surface, characterized in that the light source is placed in the center of the reaction chamber.

[Embodiment] FIG. 1 is a schematic diagram of a photo-CVD apparatus showing an embodiment of the present invention.

In the figure, 10 is a hollow cylindrical reaction chamber, and a rod-shaped ultraviolet lamp 11 is disposed as a light source on the central axis O of the hollow portion. an inner surface 12 in contact with the hollow portion of the reaction chamber 10;
is made of a cylindrical light-transmissive material (eg quartz). A donut-shaped (rotationally symmetrical with respect to axis O) exhaust pipe 13 is provided approximately at the center of the bottom of the reaction chamber, and an exhaust device 14 is connected to the exhaust pipe. Said inner surface 12
A cylindrical dirt prevention tube 15 made of a light-transmitting material (for example, quartz) and having a large number of holes is provided around the tube through a certain space S1.

A space S1 between the dirt prevention tube 15 and the cylindrical portion 12
A doughnut-shaped gas conduction pipe 16 is provided on the upper surface of the reaction chamber 10, and an inert gas supply means 17 is connected to the gas supply pipe.

A plurality of substrates 18A, 188.18G, .
..., 18M, 18N, and 180.18P are placed on the substrate holder 19. In addition, the substrate holder 1
9 is provided with a heater or cooling mechanism as required.

A doughnut-shaped gas introduction pipe 20 is provided on the upper surface of the space S2, and a process gas supply means 21 is connected to the gas introduction pipe.

The operation of such an apparatus in the case of forming a Si film on the surface of a substrate, for example, will be described below.

First, the inside of the reaction chamber 10 is evacuated by the exhaust device 14. ! I
-'it 6・151・Jim, 1L119&:I, t
6.

Activate the heated heaters, and the substrates 18A, 18B,...
... is heated to a predetermined temperature. Next, the inert gas supply means 17 is emptied f! Flow inert gas into 181.

The inert gas flows into the space S2 through the hole in the stain prevention cylinder 15. Then, the process gas supply means 21 is empty!
A process gas (eg, 5iH4) is introduced into the space S2 to bring the pressure in the space S2 to 10' to 10 Torr. At this time, the pressure in the space S1 and the pressure in the space 1ilS2 are measured, and the inert gas supply means 17 is set so that the pressure in the space S1 is higher than the pressure in the space S2.
and controls the process gas supply means 21. If this is done, the flow of the inert gas flowing from the space S1 into the space S2 is a viscous flow, so no process gas will flow into the space S1 from the space S2. Therefore, the inner surface 12
There is no dirt formed on the surface of the dirt prevention device 1i15 or on the surface of the dirt prevention device 1i15 due to the decomposition of the process gas, and the transmission of the ultraviolet rays from the ultraviolet lamp 11 is not obstructed in any way. When the ultraviolet lamp 11 is turned on, the ultraviolet rays generated from the ultraviolet lamp 11 are transmitted to the inner surface 12. It enters the space S2 via the dirt prevention cylinder 15. In the space, substrates 18A, 18B,...
The process gas causes a photochemical reaction (photoexcitation) near the surfaces of the substrates 18A and 18B, and the 3i film is exposed to the substrates 18A and 18B.

Formed on the surface of...

In the above embodiment, a sealed lamp was used as the light source, but for example, a cylindrical reaction chamber was used, and a discharge chamber whose central part was surrounded by a transparent wall was used as the reaction chamber. By connecting an exhaust device to the discharge chamber, arranging a discharge electrode in the discharge chamber, and further connecting a gas supply means to introduce an appropriate gas to cause a discharge into the discharge chamber. The light source may be a light source configured to generate light due to discharge within the discharge chamber. With such a light source, it is possible to generate discharge light of a specific wavelength by selecting various gas types, gas pressures, discharge voltages, etc., and it is possible to change the process gas for film formation on the substrate. In this case, a wavelength suitable for exciting the gas can be selected immediately.

[Effects of the Invention] According to the present invention, since the light source that generates light for optically exciting the process gas is placed in the center of the reaction chamber, most of the light generated from the light source can be irradiated into the reaction chamber. I can do it.

Therefore, since the efficiency of using light from the light source is increased, substrates can be placed in all directions in the reaction chamber as seen from the light source, and the number of substrate surface treatments increases, resulting in significantly higher productivity.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a photo-CvD device showing an embodiment of the present invention, and FIG. 2 is a schematic diagram of a photo-CvD device shown as an example of a conventional photo-excitation process device. 10: Reaction chamber 11: Ultraviolet lamp 12: Inner surface 13: Exhaust pipe 14: lJF air device S1.82
: Space 15: Dirt prevention cylinder 16: Gas introduction pipe
17: Inert gas supply means 18A, 18B, 18C
,......Substrate 19: Substrate holder
20 = Gas introduction pipe 21: Process gas supply means

Claims (1)

[Claims] By introducing process gas and light into the reaction chamber,
A photoexcitation process device for chemically treating the surface of a substrate placed in the reaction chamber by optically exciting the gas in the reaction chamber, characterized in that a light source is disposed in the center of the reaction chamber.