JPS63224224A - Photo-plasma reacting device - Google Patents
Photo-plasma reacting deviceInfo
- Publication number
- JPS63224224A JPS63224224A JP5784787A JP5784787A JPS63224224A JP S63224224 A JPS63224224 A JP S63224224A JP 5784787 A JP5784787 A JP 5784787A JP 5784787 A JP5784787 A JP 5784787A JP S63224224 A JPS63224224 A JP S63224224A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- chamber
- wafer
- chemical reaction
- reactive gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 238000006552 photochemical reaction Methods 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052753 mercury Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 241000894007 species Species 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明け、化学反応装置に関し、とりわけ半導体装置の
ＣｖＤあるいはエツチング反応装置ｉｔ構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a chemical reaction device, and particularly to a CvD or etching reaction device IT structure for a semiconductor device.
（従来の技術〕
従采、半導体装置の製造に用いられる化学反応装置とし
てはプラズマＣｖＤ装置、プラズマ（あるいけイオン）
工ヴチング装置、光ＯＶＤ装置。(Prior art) As a chemical reaction device used for manufacturing semiconductor devices, there are plasma CvD devices and plasma (air ion).
Engineering equipment, optical OVD equipment.
元エツチング装置等があっ之。There was a former etching device, etc.
しかし、上記従来技術によると反応連間が遅くひいては
スルーブツト（生産性）が低いと云う問題点があった。However, the above-mentioned prior art has the problem that the reaction rate is slow and the throughput (productivity) is low.
本発明は、かかる従来技術の問題点をなくし、高速化学
反応が可能な、生産性の高い半導体装置製造用のＯＶＤ
あるいはエツチング等の化学反応装置を提供する事を目
的とする。The present invention eliminates the problems of the prior art and provides an OVD for manufacturing semiconductor devices that is capable of high-speed chemical reactions and has high productivity.
Alternatively, the purpose is to provide a chemical reaction device for etching, etc.
上記問題点を解決するために１本発明は化学反応装置に
於て、プラズマ反応装置を用いる手段をとる。In order to solve the above-mentioned problems, the present invention takes a means of using a plasma reaction device in a chemical reaction device.
光・プラズマ反応装＠に於ては、例えばガス体のプラズ
マ化〈よるラジカルの発生による化学反応種の基底状態
化と該ラジカルの光化学反応による励起状態化により１
反応速度がプラズマ反応あるいけ光化学反応部々の単独
反応より高速にできる作用がある。In a light/plasma reaction device, for example, a gas is turned into a plasma, whereby radicals are generated to bring chemically reactive species into the ground state, and the radicals are brought into an excited state through a photochemical reaction.
It has the effect of making the reaction rate faster than a plasma reaction or a single reaction of photochemical reaction parts.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す光・プラズマ反応装置
の模式図である。すなわち、真空チャンバーである石英
チャンバー１にはモーター等が組入込まれ之支持台２が
設置され、該支持台２の士にけ試棒であるＳｉウェーハ
３が設置されると共にガス入口４から反応ガスが導入さ
れ、減圧状態を保つための真空の几め排気口５から残ガ
スｂ＝排出され、高周波電源７からの高周波が極材６に
導入されて１反応ガスがラジカル化されると共に、水銀
ランプあるｂはレーザー光源から成る光源８からの光線
がＳｉウェーハ３上に照射されて、前記反応ガスのラジ
カルを光励起して、Ｓｉウェーハ５上で高速の化学反応
を達成することができる。FIG. 1 is a schematic diagram of a light/plasma reaction apparatus showing an embodiment of the present invention. That is, a motor and the like are installed in a quartz chamber 1 which is a vacuum chamber, and a support stand 2 is installed therein. A reaction gas is introduced, residual gas b= is exhausted from a vacuum exhaust port 5 to maintain a reduced pressure state, and high frequency from a high frequency power source 7 is introduced into the electrode material 6 to radicalize the 1 reaction gas. , a mercury lamp (b) is a laser light source, and a light beam from a light source 8 is irradiated onto the Si wafer 3 to optically excite the radicals of the reaction gas, thereby achieving a high-speed chemical reaction on the Si wafer 5. .
尚、反応チャンバー内に電源を挿入し、該１１ｃ甑に電
圧を印加して方向性を反応種にもたすことができること
けいうまでもない。It goes without saying that directivity can be imparted to the reactive species by inserting a power source into the reaction chamber and applying voltage to the 11c pot.
本発明の如舞光、プラズマ反応装置に於ては。 In the light plasma reaction device of the present invention.
高速の化学反応り一可能となり生産性の高い化学反応装
置をつくる事ができろ効果がある。This has the effect of allowing high-speed chemical reactions to occur and creating a highly productive chemical reaction device.
【図面の簡単な説明】
第１図は本発明の一実施例を示す元・プラズマ反応装置
の模式図である。
１・・・・・・石英チャンバー
２・・・・・・支持台
３・・・・・・Ｓｉウェーハ
４・・・・・・ガス入口
５・・・・・・排気口
６・・・・・・極板
７・・・・・・高周波電源
８・・・・・・光源
以 上BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a plasma reactor showing an embodiment of the present invention. 1... Quartz chamber 2... Support stand 3... Si wafer 4... Gas inlet 5... Exhaust port 6... ... Pole plate 7 ... High frequency power supply 8 ... Light source and above
Claims (1)
する光・プラズマ反応装置。A light/plasma reaction device characterized by being fully equipped with a plasma generation section and a photochemical reaction section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5784787A JPS63224224A (en) | 1987-03-12 | 1987-03-12 | Photo-plasma reacting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5784787A JPS63224224A (en) | 1987-03-12 | 1987-03-12 | Photo-plasma reacting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63224224A true JPS63224224A (en) | 1988-09-19 |
Family
ID=13067368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5784787A Pending JPS63224224A (en) | 1987-03-12 | 1987-03-12 | Photo-plasma reacting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63224224A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02130826A (en) * | 1988-11-11 | 1990-05-18 | Hitachi Ltd | Method and apparatus for processing with plasma |
| US5462635A (en) * | 1991-01-29 | 1995-10-31 | Hitachi, Ltd. | Surface processing method and an apparatus for carrying out the same |
-
1987
- 1987-03-12 JP JP5784787A patent/JPS63224224A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02130826A (en) * | 1988-11-11 | 1990-05-18 | Hitachi Ltd | Method and apparatus for processing with plasma |
| US5462635A (en) * | 1991-01-29 | 1995-10-31 | Hitachi, Ltd. | Surface processing method and an apparatus for carrying out the same |
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