JPH02170530A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To reduce even plasma in a wide region thereby enabling a work having a large area to be manufactured in the high evenness and high throughput by a method wherein multiple microwave oscillators and multiple waveguides are provided to lead the microwaves to a process chamber. CONSTITUTION:The inside of a process chamber 101 comprising quartz is maintained at 0.1 Pa-several Pa by a vacuum exhaust system. Waveguides 102-104 and microwave oscillators 105-107 are arranged on the upper part of the process chamber 101 while electromagnets 108 are provided on the peripheral parts of the chamber 101. Three independent microwaves are led to the chamber 101 by three microwave oscillators 105-107 and the waveguides 102-104. Through these procedures, plasma can be produced in high density and wide region. Furthermore, the even workability of a work having a large area as well as the throughput can be enhanced.

Description

[Detailed description of the invention] Industrial applications The present invention relates to the structure of an ECR plasma generator.

BACKGROUND OF THE INVENTION Conventional ECR plasma generators generate and control plasma using a single microwave generator and waveguide.

Problems that the invention aims to solve FIG. 2 shows the structure of a conventional device.

In FIG. 2, reference numeral 201 is a process chamber made of quartz, the interior of which is evacuated to zero by an evacuation system. It is maintained at IPa to several Pa. 202 is a microwave oscillator provided above the process chamber 201 via a waveguide 203; 204 is the process chamber 201;
An electromagnet 205 is provided on the outer periphery of the workpiece holder.

Since microwaves are introduced into the process chamber 201 through a single waveguide 203, the region where the resonance condition with the external magnetic field is satisfied, that is, the plasma generation region is local and limited to a narrow region. It will be done. As a result, it is difficult to generate uniform plasma over a wide area, making it impossible to uniformly process large-area workpieces, and the throughput is low.

In view of the problems of the ECR plasma generation apparatus and method as described above, the present invention provides an apparatus and method that can generate uniform plasma over a wide area and do not cause the disadvantages of the conventional ones.

Means for Solving the Problems The present invention is based on ECR (Electron Cyclot).
This is a semiconductor manufacturing apparatus characterized in that a plasma generating apparatus (Ron Resonancl) is provided with a plurality of microwave oscillators and a plurality of waveguides and is introduced into a process chamber.

Function: In an ECR plasma generator, microwaves are introduced into the chamber using multiple microwave oscillators and multiple waveguides, and each microwave is controlled independently to generate uniform plasma over a wide area. This makes it possible to process large-area workpieces with high uniformity and high throughput.

Embodiment FIG. 1 shows an example of the construction of an ECR plasma generator according to the present invention.

In FIG. 1, reference numeral 101 denotes a process chamber made of quartz, and the inside thereof is maintained at a pressure of 0.0 IPa to several Pa by an evacuation system. 102.103, 104 and 1
05, 106, and 107 are waveguides A, B, and C, and microwave oscillators A, B, and C, respectively, and are arranged above the process chamber 101.
An electromagnet 108 is provided on the outer periphery. 109 is a sample holding stand.

The principle of the plasma generator configured as described above will be explained below.

For example, 2.45G is required to satisfy the ECR resonance condition.
When using Hz microwaves, a magnetic field strength of 875G is required. When a cylindrical electromagnet is used, the region where the magnetic field strength is 875G is donut-shaped. By introducing, for example, 2.45 GHz microwaves with independently controlled power into the region of magnetic field strength from, for example, three locations on the top of the chamber, a region satisfying the resonance condition is formed with high efficiency and over a wide area. , a plasma with high density and high uniformity is generated.

As described above, according to this embodiment, three independent microwaves are introduced into the chamber using three microwave oscillators and a waveguide, so plasma density can be high and plasma can be generated over a wide area. This makes it possible to process large-area workpieces at high speed and uniformly.

Effects of the Invention As described above, the present invention independently controls multiple microwaves and introduces them into the chamber, so it is possible to improve the processing uniformity and throughput of large-area workpieces. , an excellent plasma generation device and method with high productivity can be realized.

[Brief explanation of the drawing]

FIG. 1 is a block diagram showing an ECR plasma generator according to an embodiment of the present invention, and FIG. 2 is a block diagram showing a conventional ECR plasma generator. 101...Process chamber 102,10
3.104...Waveguide, 105,106.10
7...Microwave oscillator, 108...
Electromagnet, 109...Sample holding stand. Name of agent: Patent attorney Shigetaka Awano and one other person Figure II

Claims (1)

[Claims] ECR (Electron Cyclotron Reso
nancl) A semiconductor manufacturing device characterized in that a plasma generating device is provided with a plurality of microwave oscillators and a plurality of waveguides and introduced into a process chamber.