JPS62101020A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To improve the illuminance of beams on a substrate while stabilizing the illuminance by mounting a heat exchanger uniformly removing heat from a light-emitting section on a light source. CONSTITUTION:A heat exchanger is constituted of a silica glass tube 14 in a shape that covers a light source 2, a cooling fluid 17, a supply port 15 for the cooling fluid and an exhaust port 16 discharging a fluid 17a after cooling. Generated heat is taken away uniformly from a light-emitting section by the cooling fluid 17 flowing in the silica glass tube 14 in the light source 2, thus inhibiting the temperature rise of said light source 2. Accordingly, the luminous efficiency of the light source 2 does not drop, and stable high illuminance to a substrate 5 can be acquired.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, and in particular to optically pumped CVD.
The present invention relates to an apparatus for forming a thin film by (chemical vapor deposition method).

[Conventional technology]

Although the CVD method is an important technology for forming thin films in integrated circuit devices, the conventional CVD method mainly heats a reaction gas at .degree. C. to cause a chemical reaction. As a result, the reaction temperature becomes high, and the thin film thus formed is easily damaged.

Therefore, recently, the photoexcitation CVD method has been attracting attention as a low-temperature CVD technique. This photo-excited CVD method uses light as an energy source for CVD. According to this method, the reaction temperature can be lowered compared to conventional thermally-excited CVD methods, plasma CVD methods, etc., and it is possible to reduce the reaction temperature to thin films. You can also reduce the damage.

Generally, in the photo-excited CVD method, it is known that the intensity of light has a large effect on the formation rate of a thin film.

Furthermore, under conditions where the substrate temperature is zero and the composition ratio and pressure of the reaction gas are kept constant, the thin film formation rate increases in proportion to the light irradiation intensity.

FIG. 5 is a sectional view showing a conventional thin film forming apparatus using such a photo-excited CVD method. In the figure, (1) is a reaction chamber whose inside is reduced to a high vacuum state during film formation, (2)
is a light source consisting of a low-pressure mercury lamp, (3) is a heater for heating the substrate, (4) is a reactive gas such as silane, (5) is a substrate on which a thin film is formed, and (6) is a light entrance window made of a light-transmitting material. ,(
7) is the reaction gas supply port, (8) is the gas after reaction (4a)
The gas outlet (9) is a fixing table on which the substrate (5) is placed. QQ is a lamp chamber, αυ is a lamp cooling gas such as nitrogen, and a UAST nuclear total cooling gas supply port.

In addition, since the inside of the reaction chamber (1) is generally depressurized to an empty state with a putrid odor, the walls of the reaction chamber (1) and the light entrance window (6) made of a light-transmitting material must also have a structure that can withstand this pressure. Grooves are formed depending on the plate thickness.

In such a conventional device, when a reactive gas (4) is introduced into the reaction chamber (1) from its supply port (7), this reactive gas (4) is exposed to light beams projected from the entrance window (6). Be decomposed by excitation. The resulting reaction product is deposited on the substrate (5) which is heated at a low temperature by the heater (3) to form a thin film. Note that the gas (4a) after the reaction is discharged from the discharge port (8). Further, during the 5 reaction, in order to obtain stable and strong light intensity, the lamp (2) is cooled to a constant temperature by 1) K of the cooling gas supplied from the cooling gas supply port (6).

[Problem that the invention seeks to solve]

In this conventional semiconductor manufacturing equipment, as described above, light from a light source (2) provided outside the reaction chamber (1) is transmitted to the substrate (5).
However, in order to increase the speed of forming a thin film on this substrate (5)K, it is necessary to increase the illuminance of the light projected onto the substrate (5). Therefore, it is necessary for K to use a light source with a higher output, or to shorten the distance between the substrate (5) and the light source (2). However, it is currently difficult to find a practical light source with a long life and high output. In addition, shortening the distance between the substrate (5) and the light source (2) while maintaining the conventional structure means installing the light entrance window (6) in the reaction chamber (1) with a structure that can withstand high vacuum pressure. It was extremely difficult because it was necessary.

Therefore, the present applicant has filed an application for a semiconductor manufacturing apparatus that can solve these problems. As shown in FIG. 4, a light source (2) is placed inside the reaction chamber. Oshi. In FIG. 4, the same reference numerals as in FIG. 6 indicate the same or corresponding parts. (to) is the light source lamp (
2) Chill with the current introduction terminal for introducing current.

This semiconductor in Figure 4! ! ! ! ! In the construction equipment, the light source (2)
is placed inside the reaction chamber (1), so this light source (2)
) closer to the substrate (5)K, the illuminance of the light will increase, and the fourth ring will be formed faster.

However, in the semiconductor manufacturing apparatus shown in FIG. 4 above, the temperature of the light source (2) increases and the luminous efficiency of the low-pressure mercury lamp decreases, so it is difficult to increase the illumination intensity of the light to the substrate (5). This problem arises.

The present invention was made in view of the conventional situation, and
The object of the present invention is to obtain a semiconductor manufacturing device that can increase and stabilize the illuminance of light on a substrate.

[Means for solving problems]

In the semiconductor manufacturing apparatus according to the present invention, a lamp equipped with a heat exchanger that uniformly removes heat from a light emitting part is disposed in a reaction chamber as a light source.

[Effect]

In this invention, since a lamp equipped with a heat exchanger that uniformly removes heat from the light emitting part is disposed as a light source in the reaction chamber, this light source approaches the substrate, increasing the illuminance of the light on the substrate. The rice-feeding thin film should be formed quickly. In addition, since the heat exchanger removes the heat generated by the lamp, the temperature rise of the lamp is suppressed, and therefore the luminous efficiency of the lamp does not decrease (5. Stable illuminance can be obtained on the substrate.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to FIG.

In the figure, the same reference numerals as in Figures 6 and 4 indicate the same or equivalent parts, (B) is a quartz glass tube that covers the light source (2), αη is a cooling fluid, and (A) is a supply of this cooling fluid. The port QQ is a discharge port for discharging the cooled fluid (17a).

In the apparatus of this embodiment, when the reaction gas (4) is introduced into the reaction chamber fIJ as in the conventional apparatus, this reaction gas is excited and decomposed by the light from the light source (2), and the reaction products are A thin film is formed by depositing on the substrate (5). Since the light source is placed inside the reaction chamber in the same way as the apparatus shown in FIG. I can do it. Further, since the heat generated in this light source (2) is uniformly removed from the light emitting portion by the cooling fluid α7)K flowing inside the quartz glass tube α, the temperature rise of the light source (2) is suppressed. Therefore, the luminous efficiency of the light source (2) does not decrease, and moreover, stable and high illuminance can be obtained with respect to the substrate (5) K.

FIG. 2 is a sectional view of a semiconductor manufacturing apparatus according to another embodiment of the present invention. In Figure 2, Figures 1, 6 and 4
The same reference numerals as in the figure indicate the same or corresponding parts, 0→ is a metal tube, and (to) is a synthetic resin for molding this metal tube α barrel and the light source (2). In this embodiment, the heat exchanger of the above embodiment is composed of the metal tube α1 and the synthetic resin α1. Further, at this time, metal powder may be mixed in order to increase the thermal conductivity of the synthetic resin (1).

Note that by using nitrogen gas or a polymer that transmits light as the cooling fluid α, loss of light can be prevented. In addition, as another example of a heat exchanger, a metal block with a cooling fluid passage formed inside is tightly attached to a light source through a plastic material such as synthetic resin or a resin rich in deformable acid. Even things.

Effects similar to those of the above embodiment can be expected.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention, a light source body consisting of a lamp equipped with a heat exchanger that uniformly removes heat from a light emitting part is used as a light source, and this light source is used to react Since it is installed indoors, even when the lamp is installed in a high vacuum atmosphere, it has a simple structure that can efficiently increase the illuminance on the substrate and stabilize it.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a semiconductor manufacturing apparatus according to another embodiment of the invention, and FIG. 6 is a cross-sectional view of a conventional semiconductor manufacturing apparatus. FIG. 4 is a sectional view showing a semiconductor manufacturing apparatus according to the application filed by the applicant. In the figure, (1) is a reaction chamber, (2) is a light source, and (4) is a reaction gas. (5) is the substrate, α is the quartz glass tube, α is the cooling fluid α
η is a supply port, αQ is a cooling fluid discharge port, and α1 is a synthetic resin. Chill the α-drink with a metal tube. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Patent Attorney Tadashi Sato Year 3 Figure 41! I

Claims (3)

[Claims] (1) In a semiconductor manufacturing apparatus that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and forms a thin film on a substrate placed in the reaction gas,
A semiconductor manufacturing apparatus characterized in that the light source includes a heat exchanger that uniformly removes heat from a light emitting part of the light source. (2) The heat exchanger is made of a quartz glass tube that covers the lamp, and the quartz glass tube is provided with a cooling fluid supply port and a discharge port. Semiconductor manufacturing equipment. (3) The semiconductor manufacturing apparatus according to claim 1, wherein the heat exchanger is a metal tube through which cooling fluid flows and a lamp molded with synthetic resin.