JPS61108129A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To form thin films with even thickness in the specified direction by a method wherein a substrate is shaken in the specified direction by means of a table moving system. CONSTITUTION:Reaction gas 4 is introduced from an inlet 7 to a reaction chamber 1 for photochemical reaction by light entering from entrance window 6 to form thin films on a substrate 5 heated by a heater 3. At this time, a movable table 19 in parallel with the flowing direction of gas 4 is shaken in the same direction to expose overall surface of substrate 5 in the same direction to the gas 4 for the same time. Through these procedures, thin films with even thickness may be formed regardless of uneven concentration distribution of the reaction gas 4.

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention projects light onto a reaction gas to stimulate a photochemical reaction, thereby forming a thin film on a substrate placed in the reaction gas.
0ru method (photo chcmical vapou
The present invention relates to a conductor manufacturing apparatus for forming a Wi-shaped conductor using the rdaposition (hereinafter referred to as photoexcitation CVr) method.

[Conventional technology]

3rd [i1'/l is thin film formation by conventional photoexcitation CVD method In both figures, 1 is a reaction chamber, 2 is a light source consisting of a linear lamp, 3 is a heater for heating the substrate, 4 is a reaction gas, 5 is a substrate, 6 is a light entrance window made of a light-transmitting material, and 7 is a reactant gas supply.
1.8 is a reaction gas outlet, and 9 is a table on which the substrate 5 is placed.

In this apparatus, the reaction gas 4 is fed into the fJj feed floor reaction chamber l.
A photochemical reaction is caused in the reaction chamber 1 by the light rays introduced through the entrance window 6, and a thin film is formed on the substrate 5, which is heated at a low temperature by the heater 3.

The gas after the reaction is discharged from the discharge port 8.

Furthermore, it is generally known that in the photo-excited CVD method, the concentration of the reactant gas and the illuminance of the light have a large effect on the thin film formation rate.

[Problem that the invention seeks to solve]

However, unlike conventional thin film forming apparatuses, a reaction gas supply port is provided at one end of the reaction chamber and a reaction gas discharge port is provided at the other end.
In a mechanism that allows the reaction gas to flow into the reaction chamber, it is extremely difficult to maintain a uniform concentration of the reaction gas from the supply port to the discharge port. The concentration of the reaction gas on the substrate along the flow of the reaction gas is not constant because the flow of the reaction gas is disturbed near the reaction chamber wall, and the concentration of the reaction gas on the substrate is usually not constant near the reaction gas supply port. The concentration of the reactant gas decreases as it approaches the reactant gas outlet.

For this reason, in thin film forming apparatuses using conventional photo-excited CVD methods, even if the intensity of the light that causes the photochemical reaction, the mounting temperature, etc. are kept constant, the concentration of the reaction gas varies on the substrate, and the optimal reaction gas concentration It is extremely difficult to maintain the film over the entire surface of the substrate, and therefore it is difficult to efficiently produce high-performance semiconductors with uniform film thickness.

In addition, since the device from FFFI used a linear lamp as the light source 2, the illuminance distribution on the substrate due to the linear lamp was not uniform both in the axial direction of the lamp and in the direction perpendicular to the axis. It was difficult to form a thin film with uniform thickness.

This invention was made to solve these problems, and it is possible to form a thin film with a uniform thickness in a predetermined direction on a substrate, regardless of the non-uniformity of the reaction gas concentration or the non-uniformity of the illuminance on the substrate. The object of the present invention is to obtain a semiconductor manufacturing device that can form a semiconductor device.

[Means for solving problems]

A table moving mechanism for moving the substrate in the direction is provided.

[Effect]

In this invention, since the substrate is oscillated in a predetermined direction within the reaction chamber by a table moving mechanism, the amount of reaction gas and the amount of light energy that contribute to film formation on each part of the substrate are limited to the amount of reaction gas and light energy that contribute to film formation on each part of the substrate. The amount corresponds to the integral value of the gas concentration distribution and the illuminance distribution, so even if the distributions are non-uniform, the thickness of the thin film formed on the substrate will be uniform in the direction.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along line nn in FIG. In both figures, 1 is a reaction chamber, 4 is a reaction gas, 12 is a light source in which a plurality of linear lamps are arranged in parallel at appropriate intervals in the flow direction of the reaction gas 4, 3 is a heater for heating the substrate, 5 is a substrate, 6 is a light incident window made of a light-transmitting material, 7 is a reaction gas supply port, 8 is a reaction gas discharge port, 19 is a moving table for loading the substrate, and 20 is the moving table 19 from the reaction gas supply lower. This is a table moving mechanism that performs rocking motion along the flow direction of the reaction gas toward the discharge port 8. This is a ball screw 2 plated on a connector 19a fixed to the table 19.
3 and a motor 24 that rotationally drives this.

Next, the operation will be explained.

In this device, a reaction gas 4 is introduced into a reaction chamber 1 from a reaction gas supply lower, a photochemical reaction is caused in the reaction chamber 1 by a light beam projected from an entrance window 6, and the reaction gas 4 is deposited on a substrate 5 heated at a low temperature by a heater 3. When a thin film is formed, when the movable table 19, which can be moved parallel to the flow direction of the reaction gas, is oscillated in the same direction, all parts of the surface of the substrate 5 along the direction are moved to different positions along the direction. Therefore, the amount of the reaction gas to which each part of the surface is exposed is the same as a result of integration.

Therefore, even if the concentration distribution along the flow direction of the reactant gas is uneven due to changes in the concentration of the reactant gas due to diffusion of the reactant gas or disturbances in the flow, an i-film with a uniform thickness can be formed. Become.

Furthermore, in this embodiment, since a plurality of linear lamps arranged in parallel facing the flow direction of the reaction gas 4 is used as the light source 12, the direction is perpendicular to the flow direction of the reaction gas 4, that is, the direction perpendicular to the lamp axis. Although the illuminance distribution along the substrate L becomes uniform, the illuminance distribution becomes uneven at the substrate L along the axial direction of the lamp, which is the flow direction of the L gas. By swinging the substrate 5 in the axial direction, each part of the substrate surface in the direction is exposed to the same intensity of light for the same time, and the film thickness distribution becomes uniform.

Furthermore, in this embodiment, as described above, the light source 12 is a plurality of linear lamps arranged in parallel, and the reactive gas supply lower and the reactive gas outlet 8 are provided so that the reactive gas flows parallel to the above-mentioned axial direction. As mentioned above, the intensity of the light beam is uniformly distributed on the surface of the substrate 5 in the direction perpendicular to the axis of the lamp, and the concentration of the reactant gas is also distributed along the perpendicular direction except for the vicinity of the wall of the reaction chamber 1. Therefore, a WIi film having a uniform thickness can be formed relatively easily on the substrate 5 along the perpendicular direction.

In this way, with this device, the speed of forming a thin film on the substrate 5-1- is not affected by changes in the intensity of the light beam or uneven concentration of the reactant gas, and the thin film can be efficiently formed with a uniform thickness over the entire surface of the substrate 5. high performance semiconductors can be manufactured efficiently and at low cost.

In the second embodiment, the substrate is moved in the axial direction of the linear lamp, but the substrate may also be moved in a direction perpendicular to the lamp axis.

〔Effect of the invention〕

As described above, in the semiconductor manufacturing apparatus according to the present invention, since the substrate is moved in a certain direction, a thin film having a uniform thickness is coated on the substrate along the direction of movement of the substrate. It can be formed efficiently and has the effect of producing high-performance semiconductors efficiently and at low cost.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line nn of FIG. 1, and FIG. 3 is a cross-sectional side view of a thin film forming apparatus of a conventional semiconductor manufacturing apparatus. Figure, 4th
The figure is a sectional view taken along the line IV-■ in FIG. 3. 1 is a reaction chamber, 12 is a light source consisting of a linear lamp, 4 is a reaction gas, 5 is a substrate, and 20 is a contact table moving mechanism. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (4)

[Claims] (1) In a semiconductor manufacturing apparatus that projects light from a light source onto a reaction gas in a reaction chamber to cause a photochemical reaction and form a thin film on a substrate placed in the reaction gas, the substrate is A semiconductor manufacturing apparatus comprising a table moving mechanism that moves a table uniformly in a predetermined direction. (2) The semiconductor manufacturing apparatus according to claim 1, wherein the light source is composed of one linear lamp, and the predetermined direction is perpendicular to the axis of the linear lamp. . (3) The light source according to claim 1, wherein the light source is composed of a plurality of linear lamps arranged in parallel, and the predetermined direction is the direction of the axis of the linear lamps. Semiconductor manufacturing equipment. (4) The semiconductor manufacturing apparatus according to claim 1, wherein the predetermined direction is a direction in which the reaction gas flows.