JP2007012846A - Photoirradiation type heating device and method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoirradiation type heating device and a method therefor in which, when light from a plurality of incandescent lamps is irradiated on a processing object to carry out an RTP, variations of illuminance distribution patterns on the processing object caused by an individual differences or ripples of the incandescent lamps can be restrained and the processing object can be uniformly heated. <P>SOLUTION: The photoirradiation type heating device is configured such that a strut-like optical element unit is configured in plural combination to have light reflex characteristics on its side face and light transmission characteristics on its light enter face and light exit face. The device comprises the optical element unit COU installed between a lamp unit and the processing object, and a rotary driving mechanism 42 for driving the optical element unit COU. The optical element unit COU is in a state of being always driven during photoirradiation onto the processing object. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a light irradiation type heating apparatus and a light irradiation type heating method for performing heat treatment by irradiating an object with light.

  Generally, in a semiconductor manufacturing process, heat treatment is employed in various processes such as film formation, oxidation diffusion, impurity diffusion, nitridation, film stabilization, silicidation, crystallization, and ion implantation activation. In order to improve yield and quality in the semiconductor manufacturing process, rapid thermal processing (RTP: Rapid Thermal Processing) that rapidly raises or lowers the temperature of an object to be processed such as a semiconductor wafer is desirable. In RTP, a light irradiation type heat treatment apparatus using light irradiation from a light source such as an incandescent lamp is widely used.

  According to the light irradiation type heat treatment, for example, it is possible to raise the temperature of the object to be processed to a temperature of 1000 ° C. or more in a few tens of seconds to a few tens of seconds. To be cooled. Therefore, as compared with the resistance heating method, the temperature of the object to be processed can be increased or decreased at a high speed. Such light irradiation type heat treatment is usually performed a plurality of times.

  Here, when the object to be processed is a semiconductor wafer, for example, if the temperature distribution of the semiconductor wafer becomes uneven when the semiconductor wafer is heated, a phenomenon called slip, that is, a defect of crystal transition occurs in the semiconductor wafer. There is a risk of becoming a good product. Therefore, when RTP of a semiconductor wafer is performed using a heating device, it is necessary to perform heating, holding at a high temperature, and cooling so that the temperature distribution of the semiconductor wafer becomes uniform. That is, in RTP, high-precision temperature uniformity of the workpiece is required.

In order to improve the temperature uniformity of the object to be processed during RTP using the light irradiation type heating device, the illuminance distribution on the object to be processed of the light irradiated from the light irradiation type heating device is set to a predetermined distribution. Must be set.
For example, a temperature drop occurs near the edge of the object to be processed due to the effect of heat release, so the temperature distribution of the object to be processed is not uniform. Therefore, when the temperature characteristics of the object to be processed (for example, the degree of temperature change when predetermined heat energy is applied) is uniform, the illuminance distribution of the irradiation light on the object to be processed is near the edge of the object to be processed. Therefore, the illuminance is set to be high.
In order to set the illuminance distribution of the irradiated light on the object to be processed to a predetermined distribution, it is difficult to cope with one straight tube incandescent lamp. Therefore, in the light irradiation type heating device, for example, a configuration in which a plurality of straight tubular incandescent lamps are arranged in parallel is employed.

For example, when improving uneven temperature distribution due to a temperature drop near the edge of the object to be processed, the object to be heated is irradiated by irradiating the vicinity of the edge of the object with a higher irradiation intensity than the central part of the object to be processed. Heat so that the whole has a uniform temperature distribution.
Specifically, in the configuration in which a plurality of incandescent lamps having the same specification are arranged in parallel, the interval between the incandescent lamp groups located near the edge of the object to be processed is set at the central portion of the object to be processed. It is made narrower than the interval between the lamp groups located above. Then, the power supplied to each incandescent lamp is made the same, and the irradiation intensity in the vicinity of the edge of the workpiece is increased.
Alternatively, a plurality of incandescent lamps having a straight tube shape and the same specification are arranged in parallel and evenly, and power supplied to at least one lamp group located near the edge of the workpiece is supplied to the center of the workpiece. The irradiation power in the vicinity of the edge of the object to be processed is increased by increasing the power supplied to each lamp located above the portion.

As a conventional light irradiation type heating apparatus, Patent Document 1 discloses a light irradiation type heating apparatus that uses light emitted from an incandescent lamp to heat a glass substrate or a semiconductor wafer. As shown in FIG. 23, the light irradiation type heating apparatus stores an object to be processed in a chamber formed of a light transmissive material. A lamp unit configured by arranging a predetermined number of straight tubular incandescent lamps in parallel at predetermined intervals according to the irradiation area is used as the light irradiation source. Two sets of the lamp units are provided, and both the lamp units are arranged to face each other with the chamber interposed therebetween. The axial direction of the straight tubular incandescent lamp constituting one lamp unit is set to intersect the axial direction of the straight tubular incandescent lamp constituting the other lamp unit.
RTP of the object to be processed is performed by irradiating light including infrared rays emitted from the incandescent lamps of the lamp unit having such an arrangement from both sides of the object to be processed.
JP-A-7-37833 JP 2002-203804 A Special table 2001-524749 Special table 2000-515331

However, in reality, even incandescent lamps manufactured under the same production specifications, individual differences occur in individual radiant intensity and irradiance distribution.
Such individual differences are caused by variations in the light transmission characteristics of the light transmissive members containing the filaments of the individual incandescent lamps and variations in the filaments themselves.
Specifically, the variation in the filament is, for example, a variation in the diameter of the tungsten wire, the length of the filament, or the shape of the filament that forms the filament.

  Variations in the electrical resistance of the filament occur due to variations in the filament diameter and length. Therefore, even if the same power is supplied to a plurality of incandescent lamps having the same specifications, the current values flowing through the incandescent lamps are different, and as a result, the intensity of light emitted from each incandescent lamp varies.

  As a measure to solve the above problems, connect the power supply to each incandescent lamp constituting the lamp unit, adjust the power supplied to each incandescent lamp, and control the power consumption in each incandescent lamp to be equal. Can be considered. However, due to the variation in filament shape, the intensity of the partial irradiation intensity is generated with respect to the illuminance distribution on the workpiece when the lamp characteristics of each incandescent lamp in the incandescent lamp group are assumed to be completely uniform. To do.

The above-described variation in filament shape is caused by lighting an incandescent lamp.
That is, when the incandescent lamp is lit, the filament is in a high temperature state of 2000 ° C. or higher. For this reason, when the incandescent lamp is not lit, the filament, which is in a substantially straight state, meanders so that it can be confirmed with the naked eye during lighting. In addition, when the lighting time is long, filament-shaped meandering progresses with time.

  That is, as described above, in a configuration in which a plurality of straight tubular incandescent lamps are arranged in parallel, the illuminance distribution on the workpiece caused by individual differences of incandescent lamps manufactured under the same production specifications It is difficult to eliminate pattern variations even if the power supplied to each incandescent lamp is controlled.

On the other hand, even if there is no individual difference between each incandescent lamp, in the configuration in which a plurality of incandescent lamps of the same specification are arranged in parallel, a ripple described later is generated, and a desired illuminance distribution pattern on the object to be processed is formed. It becomes difficult.
FIG. 24 is a diagram for explaining the illuminance distribution on the workpiece when two straight tubular incandescent lamps are arranged. The light emitted from the incandescent lamp A is directly irradiated onto the object to be processed, and the light reflected by the reflecting mirror A1 is irradiated onto the object to be processed. The same applies to the light emitted from the incandescent lamp B. The light emitted from the incandescent lamp B is directly applied to the object to be processed, and the object to be processed is reflected by the reflecting mirror B1. There is something.

  As described above, for example, when RTP of an object to be processed, which is a semiconductor wafer, is performed, it is necessary to perform heating, high temperature holding, and cooling so that the temperature distribution of the semiconductor wafer becomes uniform. Therefore, the distance between incandescent lamps arranged in parallel is reduced to some extent. In this case, each irradiation region on the object to be processed of light emitted from the adjacent incandescent lamps partially overlaps as shown in FIG. The illuminance at the part where the irradiation regions overlap is increased as compared with the part where the irradiation areas do not overlap. Hereinafter, a region where the irradiation regions overlap and the illuminance increases is referred to as a ripple.

  In the ripple, the illuminance increases from the area other than the ripple, so the illuminance distribution in the vicinity of the boundary between the ripple and the area other than the ripple changes greatly. However, as described above, the ripple is generated in the portion where the light irradiation from the plurality of incandescent lamps is overlapped. Therefore, even if the power supply to each of the plurality of incandescent lamps is individually controlled, the ripple cannot be removed. .

For example, when the object to be processed is a semiconductor wafer having a circular shape, consider a case where the surface of the semiconductor wafer is divided into a plurality of concentric annular virtual regions having substantially the same radial width. The innermost area is a circular area.
When the illuminance distribution in each region is made uniform, variations in the illuminance distribution pattern on the object to be processed due to individual differences and ripples of the incandescent lamp described above are as described in Patent Document 2, It is conceivable to suppress the above-mentioned variation by rotating a semiconductor wafer as an object to be processed during light irradiation. However, even if the object to be processed is rotated, variation in the illuminance distribution in the radial direction of each region is not necessarily eliminated. That is, even if the semiconductor wafer is rotated, the illuminance distribution in each of the above regions cannot always be made uniform.

  In addition, when RTP is performed with a uniform temperature distribution on a semiconductor wafer having an asymmetric temperature rise distribution with respect to the center, the illuminance distribution pattern on the semiconductor wafer needs to be set asymmetric with respect to the center of the semiconductor wafer. In such a case, the semiconductor wafer that is the object to be processed cannot be rotated during the light irradiation.

As a measure to suppress variations in the illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamp described above, it is considered to provide a diffusion plate in the optical path between the lamp unit and the workpiece. It is done.
The diffusion plate is configured, for example, by rubbing one surface of a glass substrate into a glass (sand surface) shape or dispersing a light diffusing substance in the glass.

  Light incident on the diffuser is scattered and emitted in all directions. Therefore, the influence of individual differences and ripples of each incandescent lamp is reduced, and as a result, the illuminance distribution on the object to be processed is smoothed. Therefore, when a relatively uniform illuminance distribution is required over the entire irradiated surface of the object to be processed, it can be effective to arrange the diffusion plate in the optical path between the lamp unit and the object to be processed.

  However, the diffusing plate scatters incident light in all directions, so that it also functions as a light reducing plate. Therefore, the light intensity on the irradiated surface of the workpiece is reduced. For this reason, in order to obtain a predetermined light intensity on the irradiated surface, high power must be supplied to each incandescent lamp. That is, the operating efficiency of the light irradiation type heating device, which is defined by the ratio of the input energy to the light irradiation type heating device and the light energy on the irradiated surface of the workpiece, is lowered.

Further, since the light transmitted through the diffusion plate is scattered light, the directivity of the light is low, and the illuminance distribution on the object to be processed is smoothed. For this reason, it is difficult to finely set the illuminance distribution pattern on the irradiation surface.
For example, consider a case where a diffuser plate is used when setting the illuminance to be high in the vicinity of the edge of the object to be processed where the temperature drops due to the effect of heat release. As shown in FIG. 6B described later, when a diffuser plate is used, the illuminance distribution pattern is smoothed, and the boundary between the high and low illuminance regions on the irradiated surface becomes ambiguous. Therefore, the illuminance in a region other than the vicinity of the edge on the irradiated surface may be higher than the desired illuminance, and it is difficult to perform RTP with a uniform temperature distribution.
Further, for example, when uniformly heating a semiconductor wafer having a temperature rise distribution that is asymmetric with respect to the center, it is necessary to form an illuminance distribution pattern that is asymmetric with respect to the center of the semiconductor wafer on the light irradiation surface of the semiconductor wafer. is there. Such an illuminance distribution pattern is often set relatively finely. Even in this case, when the diffusion plate is used, the boundary between the high and low illuminance areas on the irradiated surface becomes ambiguous, and as a result, a uniform temperature is applied to the semiconductor wafer having the above temperature characteristics. It becomes difficult to perform RTP on the distribution.

  The present invention has been made based on the above circumstances, and suppresses a decrease in operating efficiency of the light irradiation type heating apparatus when performing RTP by irradiating light to be processed from a plurality of incandescent lamps. In addition, the variation in the illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamp is suppressed without degrading the shape accuracy of the illuminance distribution pattern on the light irradiation surface of the workpiece. Then, it aims at providing the light irradiation type heating apparatus which can heat a to-be-processed object uniformly.

  The light irradiation type heating apparatus according to the present invention includes a lamp unit and a lamp unit in order to suppress variations in illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamps constituting the lamp unit. An illuminance distribution correcting optical element is provided in the optical path between the object to be processed instead of the diffusion plate.

The illuminance distribution correcting optical element according to the light irradiation type heating apparatus of the present invention is a combination of a plurality of columnar optical element units. FIG. 1 is a conceptual diagram for explaining an optical element unit.
The columnar optical element unit OU is made of, for example, quartz glass and has a light reflection characteristic on the side surface RS and a light transmission characteristic on the light incident surface IS and the light emission surface OS. For example, as shown in FIG. 1, all of the lights L1, L2, L3, L4, and L5 from the lamp 1 provided with filaments in the direction perpendicular to the paper surface pass through the light incident surface IS and the light output surface OS as they are. On the other hand, L2 and L4 are reflected among the light incident on the side surface RS. In FIG. 1, the light L4 is emitted from the light exit surface OS after being reflected once by the side surface RS. The light L2 is emitted from the light exit surface OS after being reflected twice at the side surface RS. Note that light reflection occurs depending on the incident angle of light on the light incident surface IS and the light emitting surface OS, which are the boundary surfaces between air and quartz glass, but are omitted in FIG. 1 for easy understanding.

Consider a case where the optical element unit OU is arranged in the optical path between the lamp unit and the workpiece. 2 and 3 are diagrams illustrating a case where the optical element unit OU is disposed in the optical path between the lamp unit and the object to be processed.
As shown in FIG. 2 (a), the point at which the light beam emitted from the lamp 1 and incident on the optical element unit OU at an angle at which the reflection on the side surface RS does not occur reaches the irradiation surface is as shown in FIG. 2 (b). This is almost the same as the case where the optical element unit OU is not interposed in the optical path between the lamp unit and the workpiece. Therefore, the illuminance distribution on the irradiation surface of the object to be processed is the same as that in the case where the optical element unit OU is not interposed in the optical path between the lamp unit and the object to be processed.

  On the other hand, as shown in FIG. 3A, the point where the light beam emitted from the lamp 1 and incident on the optical element unit OU at an angle at which the reflection on the side surface RS occurs reaches the irradiation surface is as shown in FIG. As shown in (), when the optical element unit OU does not intervene in the optical path between the lamp unit and the object to be processed, it is greatly different from the point where the light beam reaches the irradiation surface. That is, the illuminance distribution on the irradiation surface of the object to be processed is different from the case where the optical element unit OU is not interposed in the optical path between the lamp unit and the object to be processed.

Consider a case where the optical element unit OU is moved. FIG. 4 is a diagram showing a trajectory on the irradiation surface of the object to be processed, which is incident on the optical element unit OU from the lamp unit when the optical element unit OU is moved in one direction. As apparent from FIG. 4, when the optical element unit OU is moved in one direction, the position of the side surface RS that is a light reflecting surface changes, so that it enters the light incident surface IS of the optical element unit OU from the lamp unit. The path of the light beam that is reflected by the light beam and is emitted from the light emission surface OS and reaches the irradiation surface of the object to be processed also changes, and the arrival position moves. On the other hand, the path (shown by a broken line in FIG. 4) of the light ray that enters the light incident surface IS and exits from the light exit surface OS without being reflected by the side surface RS and reaches the irradiation surface of the object to be processed is indicated by the optical element unit OU. Does not change even if is moved in one direction.
That is, when this optical element unit OU is interposed in the optical path between the lamp unit and the object to be processed and the optical element unit OU is moved, the illuminance distribution pattern that moves on the irradiation surface and the illuminance distribution pattern that does not move Will exist.

Next, consider a case where an optical element unit configured by connecting a plurality of optical element units is moved. As an example, consider a case where an optical element unit COU configured by connecting two side surfaces of two optical element units OU1 and OU2 moves in one direction.
FIG. 5 is a diagram illustrating a case where the optical element unit COU moves in one direction. As shown in FIGS. 5A, 5B, and 5C, the light incident on the side surface RS1 of the optical element unit OU1 is reflected by the side surface RS1 because the position of the side surface RS1 changes as the optical element unit COU moves. Then, the path of the light beam that is emitted from the light emission surface OS1 and reaches the irradiation surface of the object to be processed also changes, and the arrival position moves.

Eventually, the light reflected by the side surface RS1 of the optical element unit OU1 and emitted from the light exit surface OS1 disappears. On the other hand, as shown in FIGS. 5D, 5E and 5F, the light reflected from the side surface RS2 of the optical element unit OS2 and emitted from the light emitting surface OS2 is reflected from the side surface RS1 on the irradiated surface and emitted. It reaches the irradiation surface while tracing the same locus as that of the light emitted from the surface OS1.
For example, when the optical element unit OU2 has moved to the same position as the position of the optical element unit OU1 in FIG. 5A (FIG. 5D), irradiation with light reflected from the side surface RS2 and emitted from the light emission surface OS2 The position on the surface coincides with the position on the irradiation surface of the light reflected by the side surface RS1 and emitted from the light emitting surface OS1 in FIG.

  That is, when the optical element unit COU constituted by connecting a plurality of optical element units is interposed in the optical path between the lamp unit and the object to be processed and the optical element unit COU is moved, the optical element unit described above is used. As in, there are an illuminance distribution pattern that moves on the irradiation surface and an illuminance distribution pattern that does not move. Further, the illuminance distribution pattern moving on the irradiation surface repeatedly scans the irradiation surface.

  Therefore, since the illuminance distribution pattern that does not move on the irradiation surface and the illuminance distribution pattern that moves periodically overlap, the illuminance distribution pattern is averaged to some extent as a result. That is, when the optical element unit configured by connecting a plurality of optical element units as described above is interposed in the optical path between the lamp unit and the object to be processed, and the optical element unit is always driven. In addition, it is possible to correct to some extent a local variation portion of the illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamps constituting the lamp unit.

Here, the light transmitted through the optical element unit COU is neither scattered light that is reflected by the side surface RS of each optical element unit OU nor light that is emitted without being reflected, unlike the diffuser plate. .
Therefore, although the intensity of the transmitted light is reduced by the amount of light reflection generated at the light incident surface IS and the light exit surface OS, which are the boundary surfaces between air and quartz glass, the light intensity is greatly reduced as in the case of the diffusion plate. Does not occur.

In addition, since the light transmitted through the optical element unit COU is not scattered light, the directivity of the light is maintained. Therefore, a predetermined pattern is maintained without smoothing the illuminance distribution due to the light emitted without being reflected by the side surface RS of each optical element unit OU. Therefore, it is relatively easy to set the illuminance distribution pattern on the irradiation surface finely.
That is, when the optical element unit COU is interposed in the optical path between the lamp unit and the object to be processed and the optical element unit is always driven, the lamp unit is maintained while maintaining a predetermined illuminance distribution pattern to some extent. It is possible to correct to some extent local variations in the illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamps constituting the lamp.

FIG. 6 is a schematic view showing the light intensity distribution on the irradiated surface when the optical element unit of the present invention is used and when a diffusion plate is used.
As described above, the light transmitted through the optical element unit COU is not scattered light, and the directivity of the light is maintained. Therefore, when the optical element unit COU is always driven in the optical path, as shown in FIG. 6A, the light intensity distribution when there is no optical element unit COU is maintained to some extent while maintaining the local distribution. A light intensity distribution with corrected intensity variations can be obtained.
On the other hand, when the diffusing plate is installed in the optical path, the light transmitted through the diffusing plate becomes scattered light, so that the light intensity distribution when there is no optical element unit COU as shown in FIG. The light intensity distribution is smoothed and the light intensity is attenuated as a whole.
Therefore, by using the optical element unit of the present invention, the attenuation of light intensity is small, and while maintaining a desired illuminance distribution pattern, the object caused by individual differences and ripples of each incandescent lamp constituting the lamp unit. It is possible to correct to some extent a local variation portion of the illuminance distribution pattern on the workpiece.

  As described above, the optical element unit COU of the present invention needs to be arranged in a state where the optical element unit COU is always driven in the optical path. That is, the light reflected from the side surface RS of each optical element unit OU and emitted from the light emitting surface OS needs to be repeatedly scanned on the irradiation surface. For example, the optical element unit COU may be driven to rotate.

  The optical element unit COU of the present invention is effective when the light source is a linear light source, such as a straight tube incandescent lamp.

The light irradiation type heating apparatus of the present invention is configured as follows based on the above knowledge.
That is, at least one lamp unit including at least one heater in which a filament is disposed inside an arc tube made of a light-transmitting material, and power supply for supplying power to the filament and causing the lamp unit to emit light In the light irradiation type heating device for irradiating the processing object by irradiating the processing object with light emitted from the apparatus and the lamp unit,
The light irradiation type heating device has an optical element configured by arranging a plurality of columnar optical element units having a light reflecting characteristic on a side surface and a light transmitting characteristic on a light incident surface and a light emitting surface. A unit and an optical element unit driving mechanism for driving the optical element unit,
The optical element unit is an optical path between the lamp unit and an object to be processed, and is disposed at a position where light emitted after entering the optical element unit reaches the object to be processed.
The optical element unit drive mechanism drives the optical element unit at least while irradiating the object with light emitted from the lamp unit.

  The optical element unit driving mechanism may be configured to rotate the optical element.

  The lamp unit includes a first lamp unit in which a plurality of the heaters are arranged in parallel and a second lamp unit in which the plurality of heaters are arranged in parallel. The first lamp unit The second lamp unit is disposed at a position facing each other, and the axial direction of each heater constituting the first lamp unit and the axial direction of each heater constituting the second lamp unit intersect each other. You may make it do.

  Further, the heater may be configured such that the filament is divided into a plurality of pieces in the axial direction, and each of the divided filaments can be fed independently.

  The light irradiation type heating method of the present invention is a light irradiation type heating method in which light is emitted from a light irradiation source to irradiate the object to be processed, and the object to be processed is irradiated with light. A part of the light to be scanned is repeatedly scanned on the irradiation surface of the object to be processed.

  In addition, the light irradiation type heating method of the present invention is a light irradiation type heating method in which the object to be processed is heated by irradiating light emitted from the light irradiation source. An optical element unit configured by combining a plurality of columnar optical element units configured to have light transmission characteristics on the light incident surface and the light output surface, and an optical path between the light irradiation source and the object to be processed The optical element is disposed at a position where light emitted after entering the optical element unit reaches the object to be processed, and the optical element is irradiated with light emitted from a light irradiation source. A light irradiation type characterized by repeatedly scanning a part of the light irradiated to the object to be processed by the light irradiation source on the irradiation surface of the object to be processed by always driving the unit. It is a heating method.

  In the light irradiation type heating method, the light irradiation source has at least one lamp unit configured by arranging a plurality of heaters having one or more light emitting portions in parallel, and is emitted from each light emitting portion. The light intensity emitted can be individually controlled, and the light intensity emitted from each of the light emitting portions is individually controlled according to the local temperature characteristic distribution of the object to be processed during the heat treatment of the object to be processed. May be.

In the light irradiation type heating apparatus and heating method of the present invention, the light path between the lamp unit and the object to be processed has light reflection characteristics on the side surface, and light transmission characteristics on the light incident surface and light emission surface. An optical element unit configured by combining a plurality of columnar optical element units configured to be interposed is interposed, and the optical element unit is always driven by being driven during light irradiation.
By configuring in this way, the illuminance distribution pattern on the irradiation surface of the object to be irradiated includes both a moving pattern and a non-moving pattern. The illuminance distribution pattern that moves on the irradiation surface of the object to be irradiated has undergone reflection on the side surface of each optical element unit of the optical element unit, and repeatedly scans on the irradiation surface.
As a result, the illuminance distribution pattern that moves periodically overlaps the illuminance distribution pattern that does not move on the irradiation surface, and as a result, the illuminance distribution pattern is smoothed. That is, it is possible to correct a local variation portion of the illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamps constituting the lamp unit.

Here, the light that passes through the optical element unit is neither scattered light that is reflected by the side surface of each optical element unit nor emitted without being reflected, unlike the diffuser plate.
Therefore, although the intensity of transmitted light is reduced by the amount of reflected light that occurs on the light incident surface and light exit surface, which are the interface between air and quartz glass, a significant decrease in light intensity occurs as with a diffuser. do not do.

  In addition, since the light transmitted through the optical element unit is not scattered light, the directivity of the light is maintained. Therefore, a predetermined pattern is maintained without smoothing the illuminance distribution due to the light emitted without being reflected by the side surface of each optical element unit. Therefore, it is relatively easy to set the illuminance distribution pattern on the irradiation surface finely.

  In order to drive the optical element unit during light irradiation so that the optical element unit is always driven, for example, rotational movement or the like may be performed. In particular, the rotational motion is effective because the configuration is easy and the optical element unit can be driven continuously.

  Here, the lamp unit includes a first lamp unit in which a plurality of heaters each having a filament disposed inside a light-emitting tube made of a light-transmitting material and a plurality of heaters arranged in parallel. The first lamp unit and the second lamp unit are arranged at positions facing each other, and the axial direction of each heater constituting the first lamp unit and the above-mentioned If the axial directions of the heaters constituting the second lamp unit intersect each other, the illuminance distribution pattern on the irradiated surface can be set with high accuracy. Therefore, when combined with the optical element unit of the present invention, it is possible to set the illuminance distribution pattern on the irradiated surface with higher accuracy, and to realize high-precision temperature uniformity in the heat treatment.

  Further, in the above heater, when the filament is divided into a plurality of parts in the axial direction and each divided filament can be supplied with power independently, the degree of local temperature change on the substrate to be processed which is the object to be processed Even when the local temperature characteristic distribution, which is the distribution of, is asymmetric with respect to the substrate shape, the illuminance distribution pattern on the object to be processed can be set with high accuracy. Therefore, when combined with the optical element unit of the present invention, it is possible to set the illuminance distribution pattern on the irradiated surface with higher accuracy, and to realize high-precision temperature uniformity in the heat treatment.

Hereafter, the structural example of the heating apparatus of this invention is demonstrated. FIG. 7 is a view for explaining the configuration of the heating apparatus 100 of the present invention.
As shown in FIG. 7, the heating apparatus 100 includes a chamber 300. The interior of the chamber 300 is divided by the quartz window 4 into a lamp unit accommodation space S1 and a heat treatment space S2.
Light to be emitted from the first lamp unit 10 and the second lamp unit 20 housed in the lamp unit housing space S1 is irradiated to the workpiece 6 installed in the heat treatment space S2 through the quartz window 4. Thus, the heat treatment of the workpiece is performed.

  The first lamp unit 10 and the second lamp unit 20 accommodated in the lamp unit accommodation space S1 are configured by arranging, for example, ten straight tubular incandescent lamps in parallel at a predetermined interval. Both lamp units 10 and 20 are arranged so as to face each other. The axial direction of the straight tubular incandescent lamp constituting the lamp unit 10 is set so as to intersect the axial direction of the straight tubular incandescent lamp constituting the lamp unit 20.

  Here, the incandescent lamps constituting each of the lamp units 10 and 20 are divided into a plurality of filaments inside the arc tube as proposed by the present applicant in Japanese Patent Application No. 2005-57803. It is good also as a heater of the structure where each can supply electric power independently. By using the lamp units 10 and 20 using such heaters, the filament light emitting portions of the heaters are individually made to emit light, or the power supplied to the filaments of the heaters is individually adjusted, so Can be set arbitrarily and with high accuracy. FIG. 7 shows an example of the heater 1 having three filaments 14a, 14b, and 14c. In addition to the lamp described above, a single-ended halogen lamp as disclosed in JP-A-3-218624 can also be used, and a halogen in which a filament is disposed in a U-shaped tube as disclosed in Patent Document 2. A lamp can also be used.

FIG. 8 shows a detailed structure of the heater 1. As shown in FIG. 8, the arc tube 11 of the heater 1 has a sealing portion 12a formed on one end side and a sealing portion 12b formed on the other end side by a pinch seal, and the inside of the arc tube 11 is hermetically sealed. Yes. Here, the pinch seal is performed so that the metal foils 13a, 13b, and 13c are embedded in the sealing portion 12a, and the metal foils 13d, 13e, and 13f are embedded in the sealing portion 12b.
External leads 18a, 18b, 18c, 18d, 18e, and 18f are electrically connected to the metal foils 13a, 13b, 13c, 13d, 13e, and 13f, respectively.

  Inside the arc tube 11, three filaments 14a, 14b, and 14c are installed in order along substantially the same axis. An insulator 61a is provided between the filaments 14a and 14b, and an insulator 61b is provided between the filaments 14b and 14c.

A power supply line 15a is electrically connected to one end side of the filament 14a, and the power supply line 15a is further connected to the metal foil 13a. On the other hand, the power supply line 15f is electrically connected to the other end side of the filament 14a, and the power supply line 15f is further connected to the metal foil 13f.
Here, the power supply line 15f includes, in order, a through-hole 611a provided in the insulator 61a, an insulating tube 16c facing the filament 14b, a through-hole 611b provided in the insulator 61b, and an insulating tube 16f facing the filament 14c. It is installed to pass through.

A power supply line 15b is electrically connected to one end side of the filament 14b, and the power supply line 15b is further connected to the metal foil 13b. On the other hand, the power supply line 15e is electrically connected to the other end of the filament 14b, and the power supply line 15e is connected to the metal foil 13e.
Here, the feeder 15b is installed so as to pass through the through-hole 612a provided in the insulator 61a and the insulating tube 16a facing the filament 14a.
The power supply line 15e is installed so as to pass through the through-hole 612b provided in the insulator 61b and the insulating tube 16e facing the filament 14c.

A power supply line 15c is electrically connected to one end side of the filament 14c, and the power supply line 15c is further connected to the metal foil 13c. On the other hand, a power supply line 15d is electrically connected to the other end of the filament 14c, and the power supply line 15d is connected to the metal foil 13d.
Here, the power supply line 15c includes, in order, a through-hole 613b provided in the insulator 61b, an insulating tube 16d facing the filament 14b, a through-hole 613a provided in the insulator 61a, and an insulating tube 16b facing the filament 14a. It is installed to pass through.

  The filaments 14 a, 14 b, and 14 c are supported by anchors 17 that are arranged in the axial direction of the arc tube 11. The anchor 17 is sandwiched and held between the inner wall of the arc tube 11 and the insulating tubes 16a, 16d, or 16e.

  In the heater 1, the first power supply device 62 is connected between the external leads 18a and 18f, the second power supply device 63 is connected between the external leads 18b and 18e, and the third power supply is connected between the external leads 18c and 18d. The power feeding device 64 is connected. That is, the filaments 14a, 14b, and 14c are independently supplied with power by the individual power supply devices 62, 63, and 64, respectively. The power feeding devices 62, 63, and 64 are variable power sources, and the amount of power feeding can be adjusted as necessary. Each power supply device may supply DC power or supply AC power to the filament.

  That is, according to the heater 1 shown in FIG. 8, the three filaments 14a, 14b, and 14c are installed in order along substantially the same axis, and the filaments 14a, 14b, and 14c are respectively connected to the individual power feeding devices 62, Since the power can be supplied independently by 63 and 64, it is possible to individually adjust the amount of light emitted from each filament. Therefore, according to the lamp unit having such a heater, the illuminance distribution on the workpiece 6 can be arbitrarily set with high accuracy.

In addition, a power supply device is not provided for each of the filaments included in each heater of the first lamp unit 10 and the second lamp unit 20, but a plurality of filaments may be connected to one filament depending on the desired illuminance distribution. You may make it connect with an electric power feeder.
Hereinafter, the plurality of power supply apparatuses may be collectively referred to as the power supply unit 7.

Returning to FIG. 7, the reflecting mirror 2 is disposed above the first lamp unit 10. The reflecting mirror 2 has a structure in which, for example, a base material made of oxygen-free copper is coated with gold, and the reflection cross section has a shape such as a part of a circle, a part of an ellipse, a part of a parabola, or a flat plate shape. The reflecting mirror 2 reflects the light irradiated upward from the first lamp unit 10 and the second lamp unit 20 to the workpiece 6 side.
That is, in the heating device 100, the light emitted from the first lamp unit 10 and the second lamp unit 20 is irradiated on the object 6 directly or after being reflected by the reflecting mirror 2.

Cooling air from the cooling air unit 8 is introduced into the lamp unit housing space S <b> 1 from the outlet 82 of the cooling air supply nozzle 81 provided in the chamber 300. The cooling air introduced into the lamp unit housing space S1 is blown to each heater 1 in the first lamp unit 10 and the second lamp unit 20 to cool the arc tube 11 constituting each heater 1. Here, the sealing portions 12a and 12b of each heater 1 have low heat resistance compared to other locations. Therefore, the outlet 82 of the cooling air supply nozzle 81 is arranged to face the sealing portions 12a and 12b of each heater 1, and is configured to preferentially cool the sealing portions 12a and 12b of each heater 1. It is desirable. The cooling air blown to each heater 1 and heated to a high temperature by heat exchange is discharged from a cooling air discharge port 83 provided in the chamber 300. The flow of the cooling air is considered so that the cooling air heated to a high temperature by heat exchange does not heat each heater 1.
The cooling air flow is set so that the reflecting mirror 2 is also cooled at the same time. When the reflecting mirror 2 is cooled by a water cooling mechanism (not shown), it is not necessary to set the wind flow so that the reflecting mirror 2 is also cooled at the same time.

By the way, heat storage in the quartz window 4 is generated by radiant heat from the object 6 to be heated. The object 6 to be processed may be subjected to an undesired heating action due to heat rays that are secondarily emitted from the quartz window 4 that has accumulated heat.
In this case, the temperature controllability of the object to be processed is redundant (for example, overshoot such that the temperature of the object to be processed is higher than the set temperature), or the object to be processed is caused by temperature variation of the quartz window 4 itself that stores heat. Problems such as a decrease in temperature uniformity in objects occur. Moreover, it becomes difficult to improve the temperature drop rate of the workpiece 6.
Therefore, in order to suppress these problems, it is desirable to provide the outlet 82 of the cooling air supply nozzle 81 in the vicinity of the quartz window 4 and cool the quartz window 4 with the cooling air from the cooling air unit 8. .

Each heater 1 of the first lamp unit 10 is supported by a pair of first fixing bases 500 and 501. The first fixed base includes a conductive base 51 formed of a conductive member and a holding base 52 formed of an insulating member such as ceramics. The holding table 52 is provided on the inner wall of the chamber 300 and holds the conductive table 51.
When the number of heaters constituting the first lamp unit 10 is n1, and the number of divided filaments of the heater is m1, when power is supplied to all the filaments independently, a pair of first fixed bases The number of groups 500 and 501 is n1 × m1.

On the other hand, each heater 1 of the second lamp unit 20 is supported by a second fixed base. Similar to the first fixing table, the second fixing table includes a conductive table and a holding table.
When the number of heaters constituting the second lamp unit 20 is n2 and the number of divided filaments of the heater is m2, a pair of second fixed bases is used when power is supplied to all the filaments independently. The number of sets is n2 × m2.

The chamber 300 is provided with a pair of power supply ports 71 and 72 to which a power supply line from a power supply device of the power supply unit 7 is connected. In FIG. 7, one set of power supply ports 71 and 72 is shown, but the number of one set of power supply ports is determined according to the number of heaters 1, the number of filaments in each heater, and the like.
In the example of FIG. 7, the power supply port 71 is electrically connected to the conductive base 51 of the first lamp fixing base 500. The power supply port 72 is electrically connected to the conductive base 51 of the first lamp fixing base 501.
On the other hand, the conductive base 51 of the first lamp fixing base 500 is electrically connected to, for example, an external lead 18 a that is a power supply device for one heater 1 in the first lamp unit 10. For example, the conductive base 51 of the first lamp fixing base 501 is electrically connected to the external lead 18f. With such a configuration, power can be supplied from the power supply apparatus to the filament 14a of one heater 1 in the first lamp unit 10.

  The other filaments 14 b and 14 c of the heater 1, each filament of the other heater 1 of the first lamp unit 10, and each filament of the heater 1 of the second lamp unit 20 are also paired with another pair of power supply ports. From 71 and 72, the same electrical connection is made respectively.

On the other hand, in the heat treatment space S2, a treatment table 5 on which the workpiece 6 is fixed is provided. For example, when the workpiece 6 is a semiconductor wafer, the processing table 5 is made of a refractory metal material such as molybdenum, tungsten, or tantalum, a ceramic material such as silicon carbide (SiC), or quartz, silicon (Si). It is preferably a guard ring structure which is a thin plate-like annular body and a stepped portion for supporting the semiconductor wafer is formed on the inner periphery of the circular opening.
The semiconductor wafer 600 is disposed so as to fit the semiconductor wafer in the circular opening of the annular guard ring, and is supported by the stepped portion. The guard ring itself radiates and heats the outer peripheral edge of the semiconductor wafer, which is heated to the high temperature by light irradiation, and compensates for the thermal radiation from the outer peripheral edge of the semiconductor wafer. Thereby, the temperature fall of the semiconductor wafer peripheral part resulting from the thermal radiation from the outer peripheral edge of a semiconductor wafer, etc. is suppressed.

  A temperature measurement unit 91 is provided in contact with or close to the object to be processed 6 on the back side of the light irradiation surface of the object to be processed 6 installed on the processing table 5. The temperature measuring unit 91 is for monitoring the temperature distribution of the workpiece 6, and the number and arrangement are set according to the dimensions of the workpiece 6. For example, a thermocouple or an optical fiber is used for the temperature measurement unit 91. The temperature information monitored by the temperature measuring unit 91 is sent to the thermometer 9. The thermometer 9 calculates the temperature at the measurement point of each temperature measurement unit 91 based on the temperature information sent from each temperature measurement unit 91.

  Further, a process gas unit 800 for introducing and exhausting process gas may be connected to the heat treatment space S2 according to the type of heat treatment. For example, when a thermal oxidation process is performed, a process gas unit 800 that introduces and exhausts oxygen gas and a purge gas (for example, nitrogen gas) for purging the heat treatment space S2 is connected to the heat treatment space S2. Process gas and purge gas from the process gas unit 800 are introduced into the heating space S <b> 2 from the outlet 85 of the gas supply nozzle 84 provided in the chamber 300. Further, exhaust is performed from the discharge port 86.

The present invention is a light irradiation type heating apparatus in which an optical element unit for illuminance distribution correction is drivably provided between a light irradiation source and a workpiece.
As described above, this optical element unit is configured by combining a plurality of columnar optical element units having light reflection characteristics on the side surfaces.
As described above, the optical element unit of the present invention is used to correct a local variation portion of the illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamps constituting the lamp unit. For this purpose, it is necessary to drive the optical element unit so that it is always driven during light irradiation. That is, it is necessary to repeatedly scan the irradiation surface with light reflected from the side surface of each optical element unit constituting the optical element unit and emitted from the light emitting surface. In order to satisfy these requirements, for example, the optical element unit of the present invention may be driven to rotate.

The rotational movement is preferable as a method for driving the optical element unit because rotational drive control, a rotation mechanism, and the like are relatively easy.
FIG. 7 shows an example of rotating the optical element unit. That is, in the lamp unit accommodation space S1 shown in FIG. 7, the optical element unit COU for correcting the illuminance distribution is provided in the space between the first lamp unit 10 and the second lamp unit 20 and the quartz window 4. The shape of the optical element unit COU is, for example, a disk shape, and is rotationally driven at a predetermined rotational speed by the rotational drive mechanisms 42, 45, and 46. The rotation drive mechanisms 42, 45, and 46 are controlled by a rotation mechanism control unit described later.

The rotation drive mechanism is a well-known technique. For example, the rotation drive mechanism described in Patent Document 3 rotates the substrate by causing a gas flow to collide with the back surface of the substrate to be rotated. Moreover, the rotation mechanism described in Patent Document 4 floats a magnetic rotor that holds a substrate by magnetic force, and rotates the magnetic rotor by a rotating magnetic field.
Examples of a rotary drive mechanism using a gas flow as the rotary drive mechanisms 42, 45, and 46 are shown in FIGS. The rotational drive mechanism described below has a different configuration from the rotational drive mechanism described in Patent Document 3.

The rotational movement of the optical element unit includes a rotational movement (first rotational movement) in which the optical element unit itself rotates without being displaced while the center point of the optical element unit remains in the same position, and a rotation of the optical element unit itself. There is a rotational motion (second rotational motion) in which the center point is displaced so as to draw a circle without doing so. Hereinafter, the first rotational motion will be described by the rotational drive mechanism 42 shown in FIGS. 9 and 10, and the second rotational motion will be described by the rotational drive mechanisms 45 and 46 shown in FIGS.
9 is a front view of the rotation drive mechanism 42, and FIG. 10 is a cross-sectional view taken along line AA of FIG. The rotation drive mechanism 42 includes an upper gas supply member 421, a lower gas supply member 422, and a rectifying member 423.
The lower gas supply member 422 is a cylindrical flange structure provided with a step inside. An annular rectifying member 423 is provided at the step portion. The diameter of the opening of the rectifying member 423 is set to be larger than the diameter of the rotating body (optical element unit unit COU) having a disk shape, for example.
Similarly, the rotated body is placed on the step portion of the lower gas supply member 422 and inside the opening of the rectifying member 423. After mounting the rotating body, an upper gas supply member 421 having an annular shape is connected to the lower gas supply member 422 at the top.

The upper gas supply member 421 is provided with a plurality of gas introduction portions 424 at positions facing the vicinity of the peripheral edge portion of the upper surface of the rotated body. On the other hand, the lower gas supply member 422 is provided with a plurality of gas introduction portions 425 at positions facing the vicinity of the peripheral edge portion of the lower surface of the rotated body. On the other hand, a gas introduction part 426 is provided on the side surface of the lower gas supply member 422 so as to face the side surface of the rectifying member 423.
A plurality of the gas introduction portions 424, 425, and 426 described above are provided, for example, arranged at equiangular intervals in the circumferential direction.
The gas introduction units 424, 425, and 426 described above are all connected to a gas supply unit (not shown), and gas (for example, air) is supplied from the gas supply unit.

The rectifying member 423 is provided with a gas rectifying groove 427 on the surface. One end of the groove portion 427 faces the gas introduction portion 426, and the other end faces the side surface of the rotated body. The gas supplied from the gas supply unit to the gas introduction part 426 and reaching the groove part 427 is regulated in the introduction direction from the groove part 427 and reaches the side surface of the rotating body from a predetermined direction.
Here, the direction of the groove part 427 makes the same angle with respect to the tangent of the inner peripheral circle of the rectifying member 423. For example, when the rotated body has a disk shape, the gas is blown at substantially the same angle with respect to the tangent line of the outer circumference of the rotated body.

For example, when a disk-shaped rotating body is driven to rotate, gas is supplied from the gas introduction units 424, 425, and 426 from the gas supply unit. By setting the gas supply amount per unit time to the gas introduction units 424 and 425 to a predetermined value, the rotated body floats in the air from the stepped portion of the lower gas supply member 422. Next, when the gas is supplied to the gas introduction part 426, as described above, the gas is blown at substantially the same angle with respect to the tangent line of the outer circumference of the rotated body. As a result, the rotated body rotates in one direction.
In addition, when supplying gas to the gas introduction parts 424 and 425, it is desirable to supply to the gas introduction part 424 first. This is because when the gas is first supplied to the gas introduction part 425, the rotated body may collide with the upper gas supply member 421. Further, if the gas introduction portions 424 and 425 are provided at positions facing each other with the rotated body interposed therebetween, the direction of the force exerted by the gas on the rotated body is symmetric with respect to the rotated body. Control is relatively easy.

11A is a cross-sectional view taken along the line AA in FIG. 12, and FIG. 11B is a front view of the rotation drive mechanisms 45 and 46. FIG. Fig.12 (a) is BB sectional drawing of Fig.11 (a), FIG.12 (b) is CC sectional drawing of Fig.11 (a).
As shown in FIG. 12A, the rotation drive mechanism 45 is a box-shaped body having a step, and is located above the optical element unit COU and an upper gas supply unit 451 located above the optical element unit COU. It has a lower gas supply unit 452 and a central gas supply unit 453 located at the periphery of the optical element unit COU. The openings of the upper gas supply unit 451 and the lower gas supply unit 452 are smaller than the optical element unit COU. In other words, the optical element unit COU is arranged such that a part thereof is covered by the upper gas supply unit 451 and the lower gas supply unit 452 and the peripheral part thereof faces the central gas supply unit 453. The upper gas supply unit 451 and the lower gas supply unit 452 include a gas introduction unit 454 and a gas used for floating the optical element unit COU, for example, for jetting a gas such as air to the optical element unit COU. Introducing portions 455 are respectively provided. The central gas supply unit 453 is provided with gas introduction units 456a and 456b for ejecting a gas such as air used to drive the optical element unit COU in the X direction to the optical element unit COU. As shown in FIG. 12B, gas introduction portions 457a and 457b for ejecting a gas such as air used to regulate the position of the optical element unit COU in the Y direction to the optical element unit COU are provided. Is provided. That is, as shown to Fig.11 (a), the gas ejection direction of gas introduction part 456a, 456b and the gas ejection direction of gas introduction part 457a, 457b are mutually orthogonally crossed.

  As shown in FIG. 12B, the rotational drive mechanism 46 is a box-like body having a step, and is located above the rotational drive mechanism 45 and below the rotational drive mechanism 45. The lower gas supply unit 462 and the central gas supply unit 463 located at the peripheral edge of the rotation drive mechanism 45 are provided. The upper gas supply unit 461 and the lower gas supply unit 462 are respectively provided with a gas introduction unit 464 and a gas introduction unit 465 for supplying a gas such as air used for floating the rotation drive mechanism 45. . The central gas supply unit 463 is provided with gas introduction units 466a and 466b for ejecting a gas such as air used to drive the rotation driving mechanism 45 in the Y direction to the optical element unit COU. As shown in FIG. 12A, gas introducing portions 467a and 467b for injecting a gas such as air used to regulate the position of the rotation drive mechanism 45 in the X direction to the optical element unit COU are provided. Is provided. That is, as shown in FIG. 11A, the gas ejection direction with respect to the optical element unit COU of the gas introduction portions 466a and 466b and the gas ejection direction with respect to the optical element unit COU of the gas introduction portions 467a and 467b are orthogonal to each other.

The second rotational movement of the optical element unit will be described below with reference to FIGS. FIG. 13A shows an example of the relationship between the amount of displacement of the optical element unit COU with respect to the rotation drive mechanism 45 and time, and FIG. 13B shows the relationship with respect to the rotation drive mechanism 45 at time t0 in FIG. The position of the optical element unit COU is shown, and FIG. 13C shows the position of the optical element unit COU with respect to the rotation drive mechanism 45 at the time point t1 in FIG. FIG. 14A shows an example of the relationship between the amount of displacement of the rotational drive mechanism 45 relative to the rotational drive mechanism 46 and time, and FIG. 14B shows the relationship with respect to the rotational drive mechanism 46 at time t0 in FIG. The position of the rotational drive mechanism 45 is shown, and FIG. 14C shows the position of the rotational drive mechanism 45 with respect to the rotational drive mechanism 46 at the time t1 in FIG. FIG. 15 shows the relationship between the amount of displacement of the optical element unit COU relative to the rotation drive mechanism 46 and time.
The optical element unit COU is supplied from a gas supply unit (not shown) to the gas introduction unit 454 of the upper gas supply unit 451 of the rotation drive mechanism 45 and the gas introduction unit 455 of the lower gas supply unit 452 per unit time. The supply amount was set to be a predetermined amount, and the gas ejection amount per unit time from the gas introduction unit 454 and the gas introduction unit 455 was set to be a predetermined amount, thereby floating in the air. It becomes a state. In addition, when supplying gas to the gas introduction parts 454 and 455, it is desirable to supply to the gas introduction part 454 first, similarly to the first rotational motion shown in FIGS. Then, as shown in FIG. 12A, the optical element unit COU is supplied from the gas supply unit (not shown) to the gas introduction units 456a and 456b provided in the central gas supply unit 453 in a state of floating in the air. The gas supply amount per unit time is set to be a predetermined amount, the gas ejection amount from the gas introduction units 456a and 456b is set to be a predetermined amount, and The supply amount of gas supplied to the gas introduction units 457a and 457b per unit time is set to be a predetermined amount, and the gas ejection amount from the gas introduction units 457a and 457b is predetermined. The optical element unit COU is translated in the X-axis direction by setting the amount. As described above, the gas supplied to the gas introducing portions 454, 455, 456a, 456b, 457a, 457b is, for example, air.

In the example shown in FIG. 13A, the relationship between the displacement amount of the optical element unit COU and the time with respect to the rotation drive mechanism 45 is time, and the horizontal axis is the displacement amount of the optical element unit COU in the X-axis direction. In this case, a sine curve is shown. The movement of the optical element unit COU with respect to the rotation drive mechanism 45 in the section from the time point t0 to the time point t1 will be described. The optical element unit COU is located at the center of the rotation drive mechanism 45 in the X-axis direction as shown in FIG. At time t0, the end surfaces of the central gas supply unit 453 on the side where the gas introduction units 456a and 456b of the rotational drive mechanism 45 are provided and the side surfaces of the optical element unit COU that respectively face these end surfaces. The interval is Lx. At the time point t1, as shown in FIG. 13C, the rotary drive mechanism 45 is located near one end of the central gas supply unit 453. That is, the optical element unit COU is displaced by Lx with respect to the rotation drive mechanism 45 between the time point t0 and the time point t1. As shown in FIG. 13 (a), the optical element unit COU with respect to the rotation drive mechanism 45 in the section from the time t1 to the time t2, the section from the time t2 to the time t3, and the section from the time t3 to the time t4. Each displacement is Lx. That is, according to FIG. 13A, the optical element unit COU located at the center in the X-axis direction of the rotation drive mechanism 45 at the time point t0 moves to one end of the central gas supply unit 453 at the time point t1. The operation of returning to the center in the X-axis direction of the rotary drive mechanism 45 at t2, and further returning to the center of the rotary drive mechanism 45 at time t4 after moving to the other end of the central gas supply unit 453 at time t3 is repeated. It shows that it repeats without.
Such movement of the optical element unit COU in the X-axis direction with respect to the rotation drive mechanism 45 controls the rotation mechanism control unit 450 for operating the gas supply unit (not shown) by the main control unit MC as shown in FIG. Then, the gas supply units 456a, 456b, 457a, and 457b provided in the central gas supply unit 453 are controlled by temporally controlling the supply amount per unit time of the gas supplied from the gas supply unit.
That is, in the example shown in FIG. 13A, the rotation mechanism control unit 450 operates the gas supply unit to control the supply amount per unit time of the gas supplied to the gas introduction units 457a and 457b. Thus, the ratio of the ejection amount per unit time of the gas ejected from the gas introduction portions 457a and 457b is kept constant, and the position of the optical element unit COU in the Y direction is regulated.
At the same time, the rotation mechanism control unit 450 changes the ratio of the supply amount per unit time of the gas ejected from the gas introduction unit 456a and the gas introduction unit 456b with time, and as a result, the optical element unit for the rotation drive mechanism 45. The supply amount per unit time of the gas supplied to the gas introduction units 456a and 456b is controlled temporally so that the time waveform of the displacement amount of the COU becomes a sine wave.

  In synchronism with the driving of the optical element unit COU in the X direction, the gas introduction unit 464 of the upper gas supply unit 461 and the gas introduction unit of the lower gas supply unit 462 of the rotation drive mechanism 46 from a gas supply unit (not shown). The supply amount of gas supplied to 465 per unit time is set to be a predetermined amount, and the gas ejection amount per unit time from the gas introduction unit 464 and the gas introduction unit 465 is set respectively. By setting the amount to be a predetermined amount, the rotation drive mechanism 45 is suspended in the air, and from a gas supply unit (not shown) to the gas introduction units 466a and 466b provided in the central gas supply unit 463. The supply amount per unit time of the gas to be supplied is set to be a predetermined amount, and the units from the gas introduction units 466a and 466b are set. The gas ejection amount per unit is set to be a predetermined amount, and the supply amount per unit time of the gas supplied to the gas introducing portions 467a and 467b is set to be a predetermined amount. The rotational drive mechanism 45 is translated in the Y-axis direction by setting the gas ejection amounts per unit time from the gas introduction portions 467a and 467b to be predetermined amounts. As described above, the gas supplied to the gas introduction portions 464, 465, 466a, 466b, 467a, 467b is, for example, air.

In the example shown in FIG. 14A, the relational operation of the displacement amount of the rotation drive mechanism 45 with respect to the rotation drive mechanism 46 and the time is represented by the displacement amount of the rotation drive mechanism 45 in the Y-axis direction and the horizontal axis the time. The cosine curve is shown. The movement of the rotation drive mechanism 45 relative to the rotation drive mechanism 46 in the section from the time point t0 to the time point t1 will be described. The rotation drive mechanism 45 is located near one end of the central gas supply unit 463 of the rotation drive mechanism 46 at time t0 as shown in FIG. 14B, but at time t1, the rotation drive mechanism 45 is shown in FIG. 14C. As shown, the rotational drive mechanism 46 is located at the center in the Y-axis direction. Here, at time t1, the respective end surfaces of the central gas supply unit 463 on the side where the gas introduction portions 466a and 466b of the rotational drive mechanism 46 are provided, and the respective side surfaces of the rotational drive mechanism 45 that respectively face these end surfaces. The interval of is Ly. That is, the rotational drive mechanism 45 is displaced by Ly with respect to the rotational drive mechanism 46 between time t0 and time t1. As shown in FIG. 14 (a), the rotation drive mechanism 45 with respect to the rotation drive mechanism 46 has a section from time t1 to time t2, a section from time t2 to time t3, and a section from time t3 to time t4. The amount of displacement is Ly. That is, according to FIG. 14A, the rotation drive mechanism 45 located at one end of the central gas supply unit 463 of the rotation drive mechanism 46 at the time point t0 is the center of the rotation drive mechanism 46 in the Y-axis direction at the time point t1. And at the time point t2, it moves to the other end of the central gas supply part 463 of the rotational drive mechanism 46. Further, after returning to the center of the rotational drive mechanism 46 in the Y-axis direction at the time point t3, the rotational drive mechanism at the time point t4. The operation of returning to one end of 46 is repeated several times.
Such a movement of the rotation drive mechanism 45 in the Y-axis direction with respect to the rotation drive mechanism 46 controls the rotation mechanism control unit 450 that causes the main control unit MC to operate a gas supply unit (not shown) as shown in FIG. The gas supply unit 466a, 466b, 467a, 467b provided in the central gas supply unit 463 is controlled by temporally controlling the supply amount per unit time of the gas supplied from the gas supply unit.
That is, in the example shown in FIG. 14A, the rotation mechanism control unit 450 operates the gas supply unit to control the supply amount per unit time of the gas supplied to the gas introduction units 467a and 467b. Thus, the ratio of the ejection amount per unit time of the gas ejected from the gas introduction portions 467a and 467b is kept constant, and the position of the optical element unit COU in the X direction is regulated.
At the same time, the rotation mechanism control unit 450 varies the ratio of the supply amount of the gas ejected from the gas introduction unit 466a and the gas introduction unit 466b per unit time with the passage of time, and as a result, the rotation drive mechanism for the rotation drive mechanism 46. The supply amount per unit time of the gas supplied to the gas introducing portions 466a and 466b is controlled temporally so that the time waveform of the displacement amount of 45 becomes a cosine wave.

Then, since the movement of the rotation drive mechanism 45 in the Y-axis direction is superimposed on the optical element unit COU in synchronization with the movement of the optical element unit COU itself in the X-axis direction, the optical element unit COU with respect to the rotation drive mechanism 46 is superimposed. As shown in FIG. 15, the operation of FIG. 15 shows a behavior in which the center point of the optical element unit COU draws a circle. In FIG. 15, the horizontal axis indicates the amount of displacement of the optical element unit COU in the X-axis direction, and the vertical axis indicates the amount of displacement of the optical element unit COU in the Y-axis direction.
Note that the sine curve shown in FIG. 13A and the cosine curve shown in FIG. 14A are merely examples. Therefore, the optical element unit COU for the rotation drive mechanism 45 is based on a sine curve indicated by a period and phase different from the sine curve shown in FIG. 13A, or the rotation drive mechanism 45 for the rotation drive mechanism 46 is shown in FIG. Based on a cosine curve indicated by a period and a phase different from those of the cosine curve shown in FIG. 14 (a), it may be set to have a rotational movement different from the rotational movement shown in FIG.

Next, a configuration example of the optical element unit COU is shown.
As described above, the optical element unit COU of the present invention is configured such that the side surface RS shown in FIG. 1 has light reflection characteristics, and the light incident surface IS and the light output surface OS have light transmission characteristics. It is configured by combining a plurality of columnar optical element units.
When such an optical element unit is interposed in the optical path between the lamp units 10 and 20 and the object to be processed 6 and the optical element unit COU is always driven,
The illuminance distribution pattern on the irradiation surface of the object to be irradiated 6 includes a moving pattern and a non-moving pattern at the same time. The illuminance distribution pattern that moves on the irradiation surface of the object to be irradiated 6 has undergone reflection on the side surface RS of each optical element unit, and repeatedly scans on the irradiation surface.
Since the illuminance distribution pattern that moves periodically overlaps the illuminance distribution pattern that does not move on the irradiation surface, the illuminance distribution pattern is smoothed as a result. That is, it is possible to correct a local variation portion of the illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamps constituting the lamp unit.

  The scanning cycle of the illuminance distribution pattern that repeatedly scans the irradiation surface of the irradiation object 6 depends on the arrangement interval of each optical element unit. The arrangement intervals of the optical element units are not necessarily equal. However, when the intervals are equal, the scanning cycle of the illuminance distribution pattern is constant, and the illuminance distribution pattern is efficiently smoothed.

FIG. 16 is a diagram illustrating a first configuration example of the optical element unit COU.
As shown in FIG. 16A, each optical element unit OU constituting the optical element unit COU is composed of a rectangular parallelepiped quartz glass block. Convex portions I1 and O1 are provided on both side surfaces of the quartz glass block. In the example shown in FIG. 16, the upper surface of the convex portion I1 corresponds to the light incident surface, and the lower surface of the convex portion O1 corresponds to the light emitting surface.
The optical element units OU are bonded by bringing the side surfaces of the convex portions of the optical element units OU having such shapes into contact with each other and pressurizing them in a temperature (for example, 1200 to 1300 ° C.) below the softening point of quartz glass. Then, the optical element unit COU is formed (FIG. 16B).
According to the said structure, an air layer is formed in the side surface side except the convex parts I1 and O1 of each optical element unit OU. Therefore, the light incident on the side surface of each optical element unit is totally reflected depending on the incident angle. In the case where the total reflection is reliably realized on the side surface, a total reflection coating may be applied to the side surface of each optical element unit OU except for the convex portions I1 and O1.
According to the optical element unit COU having the above structure, the optical element units OU can be arranged at equal intervals by setting the optical element units OU to the same shape.

  FIG. 17 shows an example of an optical element unit COU configured in a disc shape based on the first configuration example. The optical element unit COU shown in FIG. 17 is formed, for example, into a rectangular plate shape and then cut into a disk shape. FIG. 17B is a cross-sectional view taken along line AA of the optical element unit COU shown in FIG. 17A, and an air layer AG is formed between the optical element units OU.

FIG. 18 shows a second configuration example of the optical element unit COU.
The optical element unit COU shown in FIG. 18 has a plurality of grooves formed on one surface of a quartz glass plate and lattice-shaped convex portions formed on the surface of the quartz glass. This lattice-like convex portion corresponds to the optical element unit OU. The processing of the plurality of grooves is performed by, for example, grinder processing, laser processing, or blast processing.
The mutually opposing surfaces of the grid-like convex portions correspond to the side surfaces of the optical element unit OU. The groove space between each grid-like convex part is equivalent to the air layer of the first configuration example. That is, as in the first configuration example, the light incident on the side surface of each optical element unit is totally reflected depending on the incident angle. The side surfaces of the optical element unit OU, which are the surfaces of the lattice-shaped convex portions facing each other, are each subjected to mirror finishing by etching, surface polishing, or the like. This is to prevent the reflected light of the light incident on the side surface of the optical element unit OU from becoming diffused light.
Unlike the first configuration example, the optical element unit COU according to the second configuration example does not need to be provided with a convex portion that joins the optical element units. Therefore, all the side surfaces of the optical element units are set as reflection portions. It becomes possible. Further, the optical element unit COU can be manufactured relatively easily because of processing from a single quartz glass plate.

  FIG. 19 shows an example of an optical element unit COU configured in a disc shape based on the second configuration example. The optical element unit COU shown in FIG. 19 is configured by forming a lattice-shaped convex portion corresponding to the optical element unit OU on a disk-shaped quartz glass. FIG. 19B is an AA cross-sectional view of the optical element unit COU shown in FIG. 19A, and an air layer AG is formed between the optical element units OU.

The optical element unit COU of the present invention is not limited to the first and second configuration examples described above. For example, a plurality of grooves are provided on a first quartz glass plate, and a rectangular parallelepiped quartz block whose surface is polished is arranged at substantially equal intervals, and a second quartz glass plate is further placed above the quartz block. Then, the optical element unit COU may be configured by applying pressure between the first and second quartz glasses in an atmosphere at a temperature equal to or lower than the softening point of the quartz glass (for example, 1200 to 1300 ° C.).
That is, the optical element unit COU may have any shape as long as it has a light incident surface and a light output surface and a plurality of optical element units having a light reflecting function are arranged on the side surfaces.

The light irradiation type heating device of the present invention is configured such that the light path between the lamp unit and the object to be processed has light reflection characteristics on the side surface and light transmission characteristics on the light incident surface and light emission surface. An optical element unit configured by combining a plurality of columnar optical element units is interposed, and the optical element unit is always driven by being driven during light irradiation.
By comprising in this way, the illumination intensity distribution pattern on the irradiation surface of a to-be-irradiated object exists simultaneously with what moves, and what does not move. The illuminance distribution pattern that moves on the irradiation surface of the object to be irradiated has undergone reflection on the side surface of each optical element unit, and repeatedly scans the irradiation surface.
As a result, the illuminance distribution pattern that moves periodically overlaps the illuminance distribution pattern that does not move on the irradiation surface, and as a result, the illuminance distribution pattern is smoothed. That is, it is possible to correct a local variation portion of the illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamps constituting the lamp unit.

Here, the light that passes through the optical element unit is neither scattered light that is reflected by the side surface of each optical element unit nor emitted without being reflected, unlike the diffuser plate.
Therefore, although the intensity of transmitted light is reduced by the amount of reflected light that occurs on the light incident surface and light exit surface, which are the interface between air and quartz glass, a significant decrease in light intensity occurs as with a diffuser. do not do.

  In addition, since the light transmitted through the optical element unit is not scattered light, the directivity of the light is maintained. Therefore, a predetermined pattern is maintained without smoothing the illuminance distribution due to the light emitted without being reflected by the side surface of each optical element unit. Therefore, it is relatively easy to set the illuminance distribution pattern on the irradiation surface finely.

For example, when setting the illuminance to be high near the edge of the workpiece where the temperature drops due to the effect of heat release, the illuminance distribution pattern is different from the diffusing plate when using the optical element unit. Is not smoothed, and the boundary between the high and low illuminance areas on the irradiated surface is not ambiguous. Therefore, the case where the illuminance in the region other than the vicinity of the edge on the irradiated surface is higher than the desired illuminance is significantly reduced, and RTP with a uniform temperature distribution can be performed.
In addition, for example, when uniformly heating a semiconductor wafer having a temperature rise distribution asymmetric with respect to the center, an illuminance distribution pattern asymmetric with respect to the center of the semiconductor wafer is set relatively finely on the light irradiation surface of the semiconductor wafer. There is a need. Even in this case, when the optical element unit is used, the boundary between the high and low illuminance areas on the irradiated surface is not ambiguous, unlike the case where the diffusion plate is used. RTP with a uniform temperature distribution can be performed on a semiconductor wafer having temperature characteristics.

Next, an example of heat treatment using the light irradiation type heating apparatus of the present invention will be shown.
FIG. 20 shows a control block diagram including a light irradiation type heating device for explaining an example of heat treatment using the light irradiation type heating device of the present invention. Note that the heating device 100 is shown in detail in FIG. In FIG. 20, some parts omitted in FIG. 7 are also shown. Further, in FIG. 20, the power supply lines connecting both ends of the filaments 14 a, 14 b, 14 c of the heater 1 and the power supply devices 62, 63, 64 are shown as drawn from other than both ends of the heater 1. Has been. This conceptually shows the state of connection between the filament and the power supply apparatus. Actually, as shown in FIG. 8, all the power supply lines are drawn from both ends of the heater 1.
FIG. 21 shows the power supplied to the lamp unit, the gas atmosphere, and the operating conditions of the optical element unit in the heat treatment process. Furthermore, FIG. 22 is a flowchart of an example of heat treatment using the light irradiation type heating apparatus of the present invention.
Hereinafter, an example in which an object to be processed is a semiconductor wafer and a thermal oxidation process is performed as heat treatment will be described with reference to FIGS. 18, 19, and 20.

  The main control unit MC sends a drive start command signal for the optical element unit COU to the rotation mechanism control unit 450 (step S101). The rotation drive control unit 450 that has received the drive start command signal drives the rotation drive mechanism 42 (45 and 46) to rotate the optical element unit COU (step S102). Here, when the rotary drive mechanism 42 (45 and 46) has a structure as shown in FIG. 9 and FIG. 10 or FIG. 11 and FIG. 12, the rotary drive controller 450 controls the gas supply unit (not shown). Then, the gas is supplied from the gas supply unit to the gas introduction portions 424, 425, 426 (454, 455, 456 and 464, 465, 466) of the rotation drive mechanism 42 (45 and 46), thereby the rotation drive mechanism 42 (45 And 46). Since the detailed driving procedure has been described above, it is omitted here.

  The rotational speed of the optical element unit COU is set to 250 to 500 rpm, for example. The rotational speed is kept constant thereafter.

The main controller MC controls the cooling air unit 8 to blow cooling air to the heaters 1 in the lamp unit 10 and the lamp unit 20 in the chamber 300 (step S103).
Further, the main control unit MC controls the process gas unit 800 to start a purge operation of the heat treatment space S2 of the chamber 300 with a purge gas (for example, nitrogen gas) (step S104). At this time, the purge gas pressure and the purge gas flow rate in the heat treatment space S2 are controlled to predetermined values by the process gas unit 800.

  Next, the main control unit MC controls the power feeding devices 62, 63, 64 of the power supply unit 7 individually connected to the filaments 14a, 14b, 14c of the heaters 1 constituting the lamp units 10, 20, respectively. Then, electric power is supplied to the lamp units 10 and 20 (step S105). The power supplied at this time (time 1 in FIG. 21) is a small power (Low 1 in FIG. 21) that keeps the temperature of the semiconductor wafer 600 at 500 ° C. or lower. If a large amount of power is suddenly supplied to the lamp units 10 and 20 during the heat treatment of the semiconductor wafer 600, a large inrush current flows, which may damage the power feeding devices 62, 63, 64 and others. Therefore, when the heaters 1 constituting the lamp units 10 and 20 are turned on, small power is supplied to suppress the influence of the inrush current.

  The main control unit MC transmits a transfer command signal to the transfer mechanism control unit 204 to transfer one of the semiconductor wafers 600 stored in the cassette 201a to the positioning stage 203 (step S106). The transport mechanism control unit 204 that has received the transport command signal drives the transport mechanism 202a, takes out one semiconductor wafer 600 from the cassette 201a, transports it to the positioning stage 203, and places the semiconductor wafer 600 on the positioning stage 203 (step S107). ).

The main control unit MC transmits a positioning command signal to the positioning stage 203 so as to position the orientation flat or notch, which is the reference shape of the semiconductor wafer 600 placed on the positioning stage 203, in a predetermined direction (step S108). ).
The positioning stage 203 detects the position and direction of the reference shape of the semiconductor wafer 600, and positions the reference shape of the semiconductor wafer 600 in a predetermined direction (step S109). Here, the reference shape position is detected by using optical means such as a semiconductor laser device, for example. Since a specific positioning procedure is a well-known technique, description thereof is omitted here.

  The main control unit MC transfers the semiconductor wafer 600 positioned by the positioning stage 203 to the processing table 5 in the chamber 300 that encloses the heat processing space of the semiconductor wafer 600, and controls the transfer mechanism so as to be installed on the processing table 5. A conveyance command signal is transmitted to the unit 204 (step S110). The transport mechanism control unit 204 that has received the transport command signal drives the transport mechanism 202b to transport the semiconductor wafer 600 from the positioning stage 203 and place it on the processing table 5 (step S111). In addition, during the transfer of the semiconductor wafer 600 and when the semiconductor wafer 600 is placed on the processing table 5, the reference shape position of the semiconductor wafer 600 previously positioned is stored, and the semiconductor wafer 600 placed on the processing table 5 is stored. The transport mechanism 202b operates so that the direction of the reference shape is a predetermined direction.

The positioning function of the semiconductor wafer 600 may be given to the processing table 5 and the positioning of the semiconductor wafer 600 may be performed after the semiconductor wafer 600 is placed on the processing table 5. In that case, the positioning stage 203 and the transfer mechanism 202b are omitted, and the semiconductor wafer 600 is transferred to the processing table 5 by the transfer mechanism 202a.
Further, the above steps S106 to 111 are changed as the following steps S106 ′ to S109 ′.

In other words, in step S106 ′, the main control unit MC transfers one of the semiconductor wafers 600 stored in the cassette 201a to the transfer mechanism control unit 204, and a processing table in the chamber 300 that encloses the heat processing space of the semiconductor wafer 600. Then, a conveyance command signal is transmitted to the conveyance mechanism control unit 204 so as to be installed on the processing table 5.
The transport mechanism control unit 204 that has received the transport command signal drives the transport mechanism 202a, takes out one semiconductor wafer 600 from the cassette 201a, transports it to the processing table 5, and places the semiconductor wafer 600 on the processing table 5 (step S107). ').

The main control unit MC transmits a positioning command signal to the processing table 5 so as to position the orientation flat or notch, which is the reference shape of the semiconductor wafer 600 placed on the processing table 5, in a predetermined direction (step S108). ').
The processing table 5 detects the position and direction of the reference shape of the semiconductor wafer 600 and positions the reference shape of the semiconductor wafer 600 in a predetermined direction (step S109 ′).

Note that steps S107 to S110 are omitted when positioning of the semiconductor wafer 600 is unnecessary in the heat treatment.
That is, after step S <b> 105, the transport mechanism control unit 204 that has received the transport command signal drives the transport mechanism 202 a and places the semiconductor wafer 600 on the processing table 5.
The above steps S101-S111 are performed in the period 1-2 of FIG.

Next, the main control unit MC controls the power supply devices 62, 63, and 64 individually connected to the filaments 14a, 14b, and 14c of the heaters 1 constituting the lamp units 10 and 20, respectively. The electric power supplied to 10 and 20 is increased, and the temperature of the semiconductor wafer 600 is raised (step S112).
The power supplied here is such power that the temperature of the semiconductor wafer 600 is maintained at, for example, about 500 ° C. (Middle in FIG. 21). This is because the operation of each heater 1 is made uniform before the heat treatment to stabilize the heat treatment atmosphere. The power supply amount (Middle) when the temperature of the semiconductor wafer 600 reaches 500 ° C. is stored in advance in the main controller MC.

  The main control unit MC controls the process gas unit 800 at time 3 in FIG. 21 to stop the supply of the purge gas to the heat treatment space S2 of the chamber 300 and switch to the supply of the process gas (for example, oxygen gas). (Step S113). At this time, the process gas pressure and the process gas flow rate in the heat treatment space S2 are controlled to predetermined values by the process gas unit 800.

The periods 2 to 4 for stabilizing the heat treatment atmosphere are stored in the main control unit MC in advance, and the timings of the periods 2 to 4 are performed by the timing means included in the main control unit MC. The time measuring means transmits a period end signal to the main controller MC when a time corresponding to the periods 2 to 4 has elapsed (step S114).
The above steps S112 to S114 are performed in the periods 2 to 4 in FIG.
In step S111, when the semiconductor wafer 600 is placed on the processing table 5, external air is mixed into the heat treatment space S2. The length of the period 2 to 3 is set so that the mixed air is sufficiently removed from the heat treatment space S2 by the purge gas.

The main controller MC that has received the period end signal from the time measuring means is individually connected to the filaments 14a, 14b, 14c of the heaters 1 constituting the lamp units 10, 20 in periods 4-5 of FIG. The power feeding devices 62, 63, and 64 are controlled, and lighting control is performed so that each heater is lit with a predetermined illuminance distribution pattern (step S115).
The illuminance distribution pattern described above is a pattern of illuminance distribution on the light irradiation surface of the workpiece 6 that is set in order to make the temperature during the heat treatment of the workpiece 6 uniform. For example, in the vicinity of the edge of the semiconductor wafer 600, a temperature drop occurs in the vicinity of the edge of the semiconductor wafer 600 due to the influence of heat release. Therefore, in such a case, the illuminance distribution pattern on the semiconductor wafer 600 is set so that the illuminance becomes high near the edge of the semiconductor wafer 600, for example.

Here, the heat treatment of the semiconductor wafer 600 is performed through three processes, ie, increasing the temperature of the semiconductor wafer, maintaining a constant temperature, and decreasing it. A heating apparatus 100 that is a light irradiation type heat treatment apparatus irradiates a semiconductor wafer 600 that is an object to be processed with light intensity corresponding to these three processes.
Therefore, the lighting control of each heater in step S115 is to change the light intensity of light emitted from each heater corresponding to the above three processes while maintaining the set illuminance distribution pattern on the semiconductor wafer 600. Is.
In step S115, first, lighting control is performed so that the temperature of the semiconductor wafer 600 is increased and a constant temperature is maintained. In the lighting control in step S115, the power supplied to the lamp units 10 and 20 when the temperature of the semiconductor wafer 600 is raised is expressed as High in FIG. Further, at time 5, the power supplied to the lamp units 10 and 20 when the temperature of the semiconductor wafer 600 is held at a constant temperature is expressed as Low 2 in FIG. When the temperature of the semiconductor wafer 600 is maintained at a constant temperature, it is sufficient to compensate for the amount of heat released from the semiconductor wafer 600, so that the power supplied to the lamp units 10 and 20 may be small. It may be about 10% of the electric power supplied to the lamp units 10 and 20 when raising the temperature.

  At time 6 in FIG. 21, the main control unit MC starts lighting control for realizing the temperature lowering process of the semiconductor wafer 600 (step S116). Here, the power supplied to the lamp units 10 and 20 when realizing the temperature lowering process of the semiconductor wafer 600 is expressed as Low 3 in FIG. Depending on the process, the semiconductor wafer 600 may be naturally cooled without performing light irradiation when the temperature of the semiconductor wafer is lowered.

  Further, the main control unit MC controls the process gas unit 800 at time 6 in FIG. 21 to stop the process gas supply to the heat treatment space S2 of the chamber 300 and switch to the supply of the purge gas (step S117). . At this time, the purge gas pressure and the purge gas flow rate in the heat treatment space S2 are controlled to predetermined values by the process gas unit 800.

The periods 6 to 7 until the temperature of the semiconductor wafer 600 decreases and reaches a predetermined temperature are stored in advance in the main control unit MC, and the time measurement in the periods 6 to 7 is performed by time measuring means possessed by the main control unit MC. Done. The time measuring means transmits a period end signal to the main control unit MC when a time corresponding to the periods 6 to 7 has elapsed (step S118).
The above steps S114 to S118 are performed in the periods 6 to 7 in FIG.

  The main control unit MC that has received the period end signal from the time measuring unit determines that the heating process of the semiconductor wafer 600 has been completed through a predetermined process, and at time 7 in FIG. A transfer command signal is transmitted so as to transfer one of the mounted heat-treated semiconductor wafers 600 to the cassette 201b (step S119). The transport mechanism control unit 204 that has received the transport command signal drives the transport mechanism 202c, transports the semiconductor wafer 600 placed on the processing table 5 to the cassette 201b, and stores the semiconductor wafer 600 in the cassette 201b (step). S120). With the above procedure, the heat treatment for one semiconductor wafer 600 is completed.

  In order to improve the throughput of the heat treatment, when the semiconductor wafer 600 is transferred from the positioning stage 203 to the processing stage 5 in the chamber 300 and placed in step S106, the next semiconductor wafer 600 is transferred from the cassette 201a to the positioning stage. The conveyance to 203 may be started.

  In the lighting control in steps S115 and S116, the main control unit MC may perform feedback control based on a comparison test between the temperature information of the semiconductor wafer 600 monitored by the temperature measurement unit 91 and the target temperature value. In this case, information according to the thermal energy from one or more points of the workpiece 6 monitored by the temperature measuring unit 91 is sent to the thermometer 9. The thermometer 9 transmits an electrical signal corresponding to the information received from the temperature measurement unit 91 to the temperature control unit 92. Then, the temperature control unit 92 transmits the test result of the deviation between the temperature at each measurement point and the target temperature to the main control unit MC. The main control unit MC that has received the test result performs control so that the deviation at the measurement point falls within an allowable range.

  In the above-described light irradiation type heating device 100, the light path between the lamp unit and the object to be processed has light reflection characteristics on the side surface, and light transmission characteristics on the light incident surface and light emission surface. An optical element unit configured by combining a plurality of configured columnar optical element units is interposed, and the optical element unit is always driven by being driven during light irradiation. Therefore, it is possible to correct local variations in the illuminance distribution pattern on the workpiece caused by individual differences and ripples of the incandescent lamps constituting the lamp unit, and the workpiece can be processed with higher accuracy. It is possible to set the upper illuminance distribution pattern.

It is a conceptual diagram for demonstrating an optical element unit. It is a figure which shows the case where an optical element unit is arrange | positioned in the optical path between a lamp unit and a to-be-processed object. It is a figure which shows the case where an optical element unit is arrange | positioned in the optical path between a lamp unit and a to-be-processed object. It is a figure which shows the locus | trajectory on the irradiation surface of the to-be-processed object of the light which injects into an optical element unit from a lamp unit when an optical element unit is moved to one direction. It is a figure which shows the case where the optical element unit COU moves to one direction. It is the schematic which shows the light intensity distribution on the irradiation surface at the time of using the optical element unit of this invention, and a diffuser plate. It is a figure for demonstrating the structure of the heating apparatus 100 of this invention. FIG. 2 is a view showing a detailed structure of a heater 1. 4 is a front view of a rotation drive mechanism 42. FIG. It is AA sectional drawing of FIG. It is a figure for demonstrating the structure of the rotational drive mechanisms 45 and 46. FIG. It is a figure for demonstrating the structure of the rotational drive mechanisms 45 and 46. FIG. It is a figure for demonstrating the motion of the optical element unit COU in the X-axis direction of the rotational drive mechanism 45. FIG. FIG. 6 is a diagram for explaining the movement of the rotation drive mechanism 45 in the Y-axis direction of the rotation drive mechanism 46. 6 is a diagram for explaining the movement of the optical element unit COU with respect to the rotation drive mechanism 46. FIG. It is a figure which shows the 1st structural example of the optical element unit COU. It is a figure which shows the example of the optical element unit COU comprised in the disk shape based on the 1st structural example. It is a figure which shows the 2nd structural example of the optical element unit COU. It is a figure which shows the example of the optical element unit COU comprised in the disk shape based on the 2nd structural example. It is a control block diagram for demonstrating the example of the heat processing using the light irradiation type heating apparatus of this invention. It is a figure which shows the operating conditions of the electric power supplied to the lamp unit in a heat processing process, gas atmosphere, and an optical element unit. It is a flowchart of the example of a heat processing using the light irradiation type heating apparatus of this invention. It is a flowchart of the heat processing example using the light irradiation type heating apparatus of this invention. It is a figure which shows the conventional heating apparatus. It is a figure explaining the illuminance distribution on a to-be-processed object when two straight tube incandescent lamps are put in order.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Heating apparatus 10 1st lamp unit 20 2nd lamp unit 1 Heater 2 Reflector 4 Quartz window 42 Rotation drive mechanism 421 Upper gas supply member 422 Lower gas supply member 423 Rectification member 424 Gas introduction part 425 Gas introduction part 426 Gas Introduction part 427 Groove part 45 Rotation drive mechanism 451 Upper gas supply part 452 Lower gas supply part 453 Central gas supply part 454 Gas introduction part 455 Gas introduction part 456 Gas introduction part 457 Gas introduction part 46 Rotation drive mechanism 461 Upper gas supply part 462 Lower part Gas supply section 463 Central gas supply section 464 Gas introduction section 465 Gas introduction section 466 Gas introduction section 467 Gas introduction section 5 Processing base 500, 501 First fixing base 51 Conductive base 52 Holding base 6 Processed object 7 Power supply section 71 72 Power supply port 8 Cooling air unit 81 Cooling air supply nozzle 82 Port 83 Discharge port 800 Process gas unit 84 Gas supply nozzle 85 Blow out port 86 Discharge port 9 Thermometer 91 Temperature measurement unit 92 Temperature control unit S1 Lamp unit housing space S2 Heat treatment space 11 Arc tube 12a, 12b Sealing unit 13a, 13b , 13c, 13d, 13e, 13f Metal foils 14a, 14b, 14c Filaments 15a, 15b, 15c, 15d, 15e, 15f Feed lines 16a, 16b, 16c, 16d, 16e, 16f Insulating tube 17 Anchors 18a, 18b, 18c, 18d, 18e, 18f External lead 61a, 61b Insulator 62 Power supply device 63 Power supply device 64 Power supply device 611a, 611b Through hole 612a, 612b Through hole 613a, 613b Through hole 201a Cassette 201b Cassette 202a Transport mechanism 202b Transport mechanism 202c Transport Mechanism 203 Positioning stage 204 Transfer mechanism control unit 300 Chamber 450 Rotation mechanism control unit 600 Semiconductor wafer MC Main control unit COU Optical element units OU, OU1, OU2 Optical element units RS, RS1, RS2 Side surface IS, IS1, IS2 Light incident surface OS , OS1, OS2 Light exit surfaces L1, L2, L3, L4, L5 Light I1 Convex portion O1 Convex portion AG Air layer

Claims (6)

A lamp unit including at least one heater in which a filament is disposed inside a light-emitting tube made of a light-transmitting material; a power supply device for supplying power to the filament to cause the lamp unit to emit light; and the lamp unit In the light irradiation type heating device that irradiates the object to be processed with light emitted from the substrate and heats the object,
The light irradiation type heating device includes an optical element unit configured by arranging a plurality of columnar optical element units that emit incident light from a light emission surface to a workpiece, and driving the optical element unit during light irradiation. An optical element unit driving mechanism
The optical element unit is an optical path between the lamp unit and an object to be processed, and is disposed at a position where light emitted after entering the optical element unit reaches the object to be processed. A light irradiation type heating device. The light irradiation type heating device according to claim 1, wherein the optical element unit driving mechanism rotates the optical element unit. The lamp unit is composed of a first lamp unit in which a plurality of heaters are arranged in parallel and a second lamp unit in which a plurality of heaters are arranged in parallel.
The first lamp unit and the second lamp unit are arranged at positions facing each other, and an axial direction of each heater constituting the first lamp unit and each heater constituting the second lamp unit. The light irradiation type heating device according to claim 1, wherein the light irradiation type heating device crosses each other. The light irradiation type heating apparatus according to claim 1, wherein the heater is configured such that the filament is divided into a plurality of pieces in the axial direction, and each of the divided filaments can be supplied with power independently. In the light irradiation type heating method in which the object to be processed is irradiated with light emitted from the light irradiation source to heat the object to be processed,
A light irradiation type heating method characterized by repeatedly scanning a part of the irradiated light on an irradiation surface of the object to be processed when the object is irradiated with light. In the light irradiation type heating method in which the object to be processed is irradiated with light emitted from the light irradiation source to heat the object to be processed,
An optical element unit configured by combining a plurality of columnar optical element units having light reflection characteristics on the side surfaces and light transmission characteristics on the light incident surface and the light output surface is provided as the light irradiation source. The light path between the light source and the object to be processed is disposed at a position where the light emitted after entering the optical element unit reaches the object to be processed, and the light emitted from the light irradiation source is processed. A light irradiation type characterized by driving the optical element unit while irradiating an object to repeatedly scan a part of the light irradiated to the object to be processed by the light irradiation source on the irradiation surface of the object to be processed. Heating method.

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