JPS61124572A - 化学蒸着方法 - Google Patents
化学蒸着方法Info
- Publication number
- JPS61124572A JPS61124572A JP24685484A JP24685484A JPS61124572A JP S61124572 A JPS61124572 A JP S61124572A JP 24685484 A JP24685484 A JP 24685484A JP 24685484 A JP24685484 A JP 24685484A JP S61124572 A JPS61124572 A JP S61124572A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- base material
- chemical vapor
- susceptor
- supporting member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002296 pyrolytic carbon Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 abstract description 22
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 abstract description 12
- 229910021383 artificial graphite Inorganic materials 0.000 abstract description 9
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229930195733 hydrocarbon Natural products 0.000 abstract description 3
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 3
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract description 3
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 abstract description 2
- LGXVIGDEPROXKC-UHFFFAOYSA-N 1,1-dichloroethene Chemical group ClC(Cl)=C LGXVIGDEPROXKC-UHFFFAOYSA-N 0.000 abstract description 2
- 230000006698 induction Effects 0.000 abstract description 2
- -1 methane or propane Chemical class 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000001294 propane Substances 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 238000004227 thermal cracking Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 4
- 239000007770 graphite material Substances 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical compound C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004045 organic chlorine compounds Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24685484A JPS61124572A (ja) | 1984-11-21 | 1984-11-21 | 化学蒸着方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24685484A JPS61124572A (ja) | 1984-11-21 | 1984-11-21 | 化学蒸着方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61124572A true JPS61124572A (ja) | 1986-06-12 |
| JPH058270B2 JPH058270B2 (enrdf_load_stackoverflow) | 1993-02-01 |
Family
ID=17154700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24685484A Granted JPS61124572A (ja) | 1984-11-21 | 1984-11-21 | 化学蒸着方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61124572A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0855898A (ja) * | 1994-02-25 | 1996-02-27 | Applied Materials Inc | 堆積装置用サセプタ |
| JP2008255437A (ja) * | 2007-04-06 | 2008-10-23 | Kobe Steel Ltd | 導電性ダイヤモンド被覆網状電極、その製造方法及び同電極を備えたオゾン水生成装置 |
| JP2010100889A (ja) * | 2008-10-23 | 2010-05-06 | Toyo Tanso Kk | 炭素基材表面への炭化珪素膜の形成方法 |
| JP2012184152A (ja) * | 2011-03-08 | 2012-09-27 | Ibiden Co Ltd | セラミックス基材支持具及びセラミックス部材の製造方法 |
| WO2016002815A1 (ja) * | 2014-06-30 | 2016-01-07 | イビデン株式会社 | セラミック部材の製造方法および支持具 |
| JP2016169422A (ja) * | 2015-03-13 | 2016-09-23 | イビデン株式会社 | セラミック部材の製造方法 |
| KR20190133609A (ko) | 2018-05-23 | 2019-12-03 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 화학 기상 성장 장치 및 피막 형성 방법 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2603831Y2 (ja) * | 1996-03-28 | 2000-03-27 | 株式会社ゼクセル | 熱交換器におけるブラケットの取付け構造 |
| JP2602085Y2 (ja) * | 1996-03-28 | 1999-12-20 | 株式会社ゼクセル | 熱交換器のブラケット |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4722212U (enrdf_load_stackoverflow) * | 1971-04-08 | 1972-11-13 |
-
1984
- 1984-11-21 JP JP24685484A patent/JPS61124572A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4722212U (enrdf_load_stackoverflow) * | 1971-04-08 | 1972-11-13 |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0855898A (ja) * | 1994-02-25 | 1996-02-27 | Applied Materials Inc | 堆積装置用サセプタ |
| JP2008255437A (ja) * | 2007-04-06 | 2008-10-23 | Kobe Steel Ltd | 導電性ダイヤモンド被覆網状電極、その製造方法及び同電極を備えたオゾン水生成装置 |
| JP2010100889A (ja) * | 2008-10-23 | 2010-05-06 | Toyo Tanso Kk | 炭素基材表面への炭化珪素膜の形成方法 |
| JP2012184152A (ja) * | 2011-03-08 | 2012-09-27 | Ibiden Co Ltd | セラミックス基材支持具及びセラミックス部材の製造方法 |
| WO2016002815A1 (ja) * | 2014-06-30 | 2016-01-07 | イビデン株式会社 | セラミック部材の製造方法および支持具 |
| JP2016011243A (ja) * | 2014-06-30 | 2016-01-21 | イビデン株式会社 | セラミック部材の製造方法および支持具 |
| JP2016169422A (ja) * | 2015-03-13 | 2016-09-23 | イビデン株式会社 | セラミック部材の製造方法 |
| KR20190133609A (ko) | 2018-05-23 | 2019-12-03 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 화학 기상 성장 장치 및 피막 형성 방법 |
| JP2019206751A (ja) * | 2018-05-23 | 2019-12-05 | 信越化学工業株式会社 | 化学気相成長装置および被膜形成方法 |
| US11885022B2 (en) | 2018-05-23 | 2024-01-30 | Shin-Etsu Chemical Co., Ltd. | Method of forming a film on a substrate by chemical vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH058270B2 (enrdf_load_stackoverflow) | 1993-02-01 |
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